JP2021073747A - 強誘電体キャパシタ、強誘電体電界効果トランジスタ、並びに導電性材料及び強誘電体材料を含む電子部品の形成に用いられる方法 - Google Patents
強誘電体キャパシタ、強誘電体電界効果トランジスタ、並びに導電性材料及び強誘電体材料を含む電子部品の形成に用いられる方法 Download PDFInfo
- Publication number
- JP2021073747A JP2021073747A JP2021023418A JP2021023418A JP2021073747A JP 2021073747 A JP2021073747 A JP 2021073747A JP 2021023418 A JP2021023418 A JP 2021023418A JP 2021023418 A JP2021023418 A JP 2021023418A JP 2021073747 A JP2021073747 A JP 2021073747A
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- oxide
- composite laminate
- metal oxide
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 152
- 239000003990 capacitor Substances 0.000 title claims abstract description 56
- 239000004020 conductor Substances 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 27
- 230000005669 field effect Effects 0.000 title claims description 22
- 239000002131 composite material Substances 0.000 claims abstract description 87
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 80
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 80
- 239000000203 mixture Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 49
- -1 ScOx Inorganic materials 0.000 claims abstract description 15
- 239000012212 insulator Substances 0.000 claims description 46
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 41
- 239000011810 insulating material Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 19
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 17
- 229910052726 zirconium Inorganic materials 0.000 claims description 14
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 13
- 229910052735 hafnium Inorganic materials 0.000 claims description 13
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 13
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910019895 RuSi Inorganic materials 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 5
- 229910008484 TiSi Inorganic materials 0.000 claims description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- ARZRWOQKELGYTN-UHFFFAOYSA-N [V].[Mn] Chemical compound [V].[Mn] ARZRWOQKELGYTN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- XRFHCHCLSRSSPQ-UHFFFAOYSA-N strontium;oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Sr+2] XRFHCHCLSRSSPQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 3
- 229910004121 SrRuO Inorganic materials 0.000 claims description 2
- 229910010037 TiAlN Inorganic materials 0.000 claims description 2
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 claims description 2
- KRYNIUBBTNJWSY-UHFFFAOYSA-N [Si]=O.[Hf].[Zr] Chemical compound [Si]=O.[Hf].[Zr] KRYNIUBBTNJWSY-UHFFFAOYSA-N 0.000 claims description 2
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 claims description 2
- JXSUUUWRUITOQZ-UHFFFAOYSA-N oxygen(2-);yttrium(3+);zirconium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Y+3].[Y+3].[Zr+4].[Zr+4] JXSUUUWRUITOQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910004166 TaN Inorganic materials 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 11
- 239000007772 electrode material Substances 0.000 abstract description 2
- 229910017107 AlOx Inorganic materials 0.000 abstract 1
- 229910003320 CeOx Inorganic materials 0.000 abstract 1
- 229910019923 CrOx Inorganic materials 0.000 abstract 1
- 229910017947 MgOx Inorganic materials 0.000 abstract 1
- 229910015711 MoOx Inorganic materials 0.000 abstract 1
- 101100096038 Mus musculus Smox gene Proteins 0.000 abstract 1
- 229910002830 PrOx Inorganic materials 0.000 abstract 1
- 229910019897 RuOx Inorganic materials 0.000 abstract 1
- 229910002347 SrOx Inorganic materials 0.000 abstract 1
- 229910003087 TiOx Inorganic materials 0.000 abstract 1
- 229910007667 ZnOx Inorganic materials 0.000 abstract 1
- 229910003134 ZrOx Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 abstract 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 230000015654 memory Effects 0.000 description 25
- 239000012634 fragment Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 229910002108 dysprosium titanate Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1434—Memory
- H01L2924/1435—Random access memory [RAM]
- H01L2924/1441—Ferroelectric RAM [FeRAM or FRAM]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
幾つかの実施形態では、導電性材料及び強誘電体材料を含む電子部品を形成するのに用いられる方法は、基板の上に非強誘電性金属酸化物含有絶縁体材料を形成することを含む。少なくとも2つの異なる組成の非強誘電性金属酸化物を含む複合積層物は、基板の上に形成される。複合積層物は、少なくとも×102ジーメンス/cmの全体的な導電率を有する。複合積層物は、非強誘電性金属酸化物含有絶縁体材料を強誘電性にするために用いられる。導電性材料は、複合積層物及び絶縁体材料の上に形成される。
12 ベース基板
14 非強誘電性金属酸化物含有絶縁体材料
16 複合積層物
18、20、22、24 層
26 導電性材料
28 非強誘電性金属酸化物含有絶縁材料
30 強誘電性ゲート構造物
32 半導体チャネル
34 ソース/ドレイン領域
35 強誘電体電界効果トランジスタ
40 強誘電体キャパシタ
42 導電体材料
Claims (12)
- 間に強誘電体材料を有する2つの導電性キャパシタ電極と、
基板上の、異なる組成の複数の非強誘電性金属酸化物を含む複合積層物であって、前記異なる組成の複数の非強誘電性金属酸化物は、TiOx、AlOx、Al2O3、ScOx、Sc2O3、ZrOx、YOx、Y2O3、MgOx、MgO、HfOx、SrOx、SrO、TaxOy、NbOx、GdOx、MoOx、RuOx、LaOx、VxOy、IrOx、CrOx、ZnOx、PrOx、CeOx、SmOx、及びLuOxの中から選択される、複合積層物と、
を含む強誘電体キャパシタ。 - 前記複合積層物はSiO2を更に含む、請求項1に記載の強誘電体キャパシタ。
- 間に強誘電性金属酸化物材料を有する2つの導電性キャパシタ電極であって、前記強誘電性金属酸化物材料は、遷移金属酸化物、ジルコニウム、酸化ジルコニウム、ハフニウム、酸化ハフニウム、チタン酸ジルコン酸鉛、酸化タンタル、酸化ストロンチウム、酸化チタンストロンチウム、酸化チタン、及びチタン酸バリウムストロンチウムからなるグループのうちの1種以上を含み、かつ、その中にドーパントを有し得、該ドーパントは、シリコン、アルミニウム、ランタン、イットリウム、エルビウム、カルシウム、マグネシウム、ストロンチウム、ルテチウム、ジスプロシウム、ガドリニウム、プラセオジム、クロム、ニオブ、タンタル、ハフニウム、ジルコニウム、バナジウムマンガン、コバルト、ニッケル、炭素、及び任意のその他の希土類元素のうちの1種以上を含む、2つの導電性キャパシタ電極と、
前記導電性キャパシタ電極のうちの少なくとも一方と前記強誘電性金属酸化物材料との間の非強誘電性材料であって、該非強誘電性材料は、TiOx、AlOx、Al2O3、ScOx、Sc2O3、ZrOx、YOx、Y2O3、MgOx、MgO、HfOx、SrOx、SrO、TaxOy、NbOx、GdOx、MoOx、RuOx、LaOx、VxOy、IrOx、CrOx、ZnOx、PrOx、CeOx、SmOx、及びLuOxからなるグループの中から選択された少なくとも2種の異なる非強誘電性金属酸化物組成物を含む複合積層物を含み、前記非強誘電性材料は、前記非強誘電性材料に近い方の前記導電性キャパシタ電極の導電率よりも低い全体的な導電率を有する、非強誘電性材料と、
を含む強誘電体キャパシタ。 - 前記導電性キャパシタ電極の各々は、個々に、IrOx、SrRuO3、RuOx、LSCO、TiSix、TaSix、RuSix、WNxSiy、Ru、TiAlN、TaN、WNx、TiSixNy、TaSixNy、RuSixNy、及びRuSixTiyNzからなるグループの中から選択された1種以上の材料を含む、請求項3に記載の強誘電体キャパシタ。
- 前記非強誘電性金属酸化物組成物は、個々に、TiOx、AlOx、ZrOx、MgOx、HfOx、及びNbOxからなるグループの中から選択される、請求項3に記載の強誘電体キャパシタ。
- 前記非強誘電性金属酸化物組成物のうちの少なくとも1種はNbOxである、請求項5に記載の強誘電体キャパシタ。
- 前記強誘電性金属酸化物材料は、ジルコニウム、酸化ジルコニウム、ハフニウム、酸化ハフニウム、チタン酸ジルコン酸鉛、酸化タンタル、酸化ストロンチウム、及び酸化チタンストロンチウムからなるグループのうちの1種以上を含む、請求項6に記載の強誘電体キャパシタ。
- 間に半導体チャネルを有する一対のソース/ドレイン領域と、
ゲート構造物と、
を備える強誘電体電界効果トランジスタであって、
前記ゲート構造物は、
ジルコニウム、酸化ジルコニウム、ハフニウム、酸化ハフニウム、チタン酸ジルコン酸鉛、酸化タンタル、酸化ストロンチウム、及び酸化チタンストロンチウムからなるグループのうちの1種以上を含む強誘電性ゲート絶縁体材料と、
導電性ゲート電極と、
TiOx、AlOx、Al2O3、ScOx、Sc2O3、ZrOx、YOx、Y2O3、MgOx、MgO、HfOx、SrOx、SrO、TaxOy、NbOx、GdOx、MoOx、RuOx、LaOx、VxOy、IrOx、CrOx、ZnOx、PrOx、CeOx、SmOx、及びLuOxからなるグループの中から選択された少なくとも2種の非強誘電性金属酸化物組成物を含む複合積層物であって、前記導電性ゲート電極の導電率よりも小さい全体的な導電率を有する複合積層物と、
を含む、強誘電体電界効果トランジスタ。 - 前記強誘電性ゲート絶縁体材料は、前記複合積層物に直接対向している、請求項8に記載の強誘電体電界効果トランジスタ。
- 前記複合積層物は、TiOx、AlOx、ZrOx、MgOx、HfOx、及びNbOxからなるグループの中から選択された少なくとも1種の非強誘電性金属酸化物組成物を含む、請求項8に記載の強誘電体電界効果トランジスタ。
- 前記少なくとも1種の非強誘電性金属酸化物組成物はNbOxである、請求項10に記載の強誘電体電界効果トランジスタ。
- 導電性材料及び強誘電体材料を含む電子部品の形成に用いられる方法であって、
第1の非強誘電性金属酸化物と、該第1の非強誘電性金属酸化物上の第2の非強誘電性金属酸化物とを含む複合積層物を形成することであって、前記第1及び第2の非強誘電性金属酸化物は、互いに異なる組成であり、かつ、その各々が、個々に、TiOx、AlOx、Al2O3、ScOx、Sc2O3、ZrOx、YOx、Y2O3、MgOx、MgO、HfOx、SrOx、SrO、TaxOy、NbOx、GdOx、MoOx、RuOx、LaOx、VxOy、IrOx、CrOx、ZnOx、PrOx、CeOx、SmOx、及びLuOxからなるグループの中から選択される、ことと、
前記複合積層物の直接上に非強誘電性金属酸化物含有絶縁体材料を形成することであって、前記非強誘電性金属酸化物含有絶縁体材料は、その最初の形成時に強誘電性になる絶縁体材料を含み、該絶縁体材料は、イットリウム・ジルコニウム酸化物、ハフニウム・ジルコニウム酸化物、ハフニウム・シリコン酸化物、及びハフニウム・ジルコニウム・シリコン酸化物からなるグループのうちの少なくとも1種を含む、ことと、
前記複合積層物及び前記絶縁体材料の上に導電性材料を形成することと、
を含む方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/958,182 US9876018B2 (en) | 2015-12-03 | 2015-12-03 | Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material |
US14/958,182 | 2015-12-03 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018527999A Division JP6883038B2 (ja) | 2015-12-03 | 2016-11-21 | 強誘電体キャパシタ、強誘電体電界効果トランジスタ、並びに導電材料及び強誘電体材料を含む電子部品の形成に用いられる方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021073747A true JP2021073747A (ja) | 2021-05-13 |
JP7265570B2 JP7265570B2 (ja) | 2023-04-26 |
Family
ID=58797884
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018527999A Active JP6883038B2 (ja) | 2015-12-03 | 2016-11-21 | 強誘電体キャパシタ、強誘電体電界効果トランジスタ、並びに導電材料及び強誘電体材料を含む電子部品の形成に用いられる方法 |
JP2021023418A Active JP7265570B2 (ja) | 2015-12-03 | 2021-02-17 | 強誘電体キャパシタ、強誘電体電界効果トランジスタ、並びに導電性材料及び強誘電体材料を含む電子部品の形成に用いられる方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018527999A Active JP6883038B2 (ja) | 2015-12-03 | 2016-11-21 | 強誘電体キャパシタ、強誘電体電界効果トランジスタ、並びに導電材料及び強誘電体材料を含む電子部品の形成に用いられる方法 |
Country Status (7)
Country | Link |
---|---|
US (4) | US9876018B2 (ja) |
EP (1) | EP3384532A4 (ja) |
JP (2) | JP6883038B2 (ja) |
KR (3) | KR102415069B1 (ja) |
CN (2) | CN113644194A (ja) |
TW (1) | TWI600057B (ja) |
WO (1) | WO2017095678A1 (ja) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10468495B2 (en) * | 2015-08-11 | 2019-11-05 | Alacrity Semiconductors, Inc. | Integrated circuit including ferroelectric memory cells and methods for manufacturing |
US11120884B2 (en) | 2015-09-30 | 2021-09-14 | Sunrise Memory Corporation | Implementing logic function and generating analog signals using NOR memory strings |
US9876018B2 (en) | 2015-12-03 | 2018-01-23 | Micron Technology, Inc. | Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material |
US9786345B1 (en) * | 2016-09-16 | 2017-10-10 | Micron Technology, Inc. | Compensation for threshold voltage variation of memory cell components |
US10957807B2 (en) * | 2017-04-19 | 2021-03-23 | The Board Of Trustees Of The University Of Alabama | PLZT thin film capacitors apparatus with enhanced photocurrent and power conversion efficiency and method thereof |
US10319426B2 (en) * | 2017-05-09 | 2019-06-11 | Micron Technology, Inc. | Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods |
CN109087997A (zh) * | 2017-06-14 | 2018-12-25 | 萨摩亚商费洛储存科技股份有限公司 | 铁电膜层的制造方法、铁电隧道结单元、存储器元件及其写入与读取方法 |
WO2018236361A1 (en) * | 2017-06-20 | 2018-12-27 | Intel Corporation | FERROELECTRIC FIELD EFFECT TRANSISTORS (FEFET) HAVING INTERFACE LAYER DESIGNED AS A BAND |
WO2018236360A1 (en) * | 2017-06-20 | 2018-12-27 | Intel Corporation | PHASE FIELD EFFECT TRANSISTORS HAVING FERROELECTRIC GRID DIELECTRICS |
US10950384B2 (en) * | 2017-08-30 | 2021-03-16 | Micron Technology, Inc. | Method used in forming an electronic device comprising conductive material and ferroelectric material |
DE102018108152A1 (de) * | 2017-08-31 | 2019-02-28 | Taiwan Semiconductor Manufacturing Co. Ltd. | Halbleiterbauelement und herstellungsverfahren davon |
DE112017008132T5 (de) * | 2017-09-29 | 2020-07-02 | Intel Corporation | Mehrschichtiger isolatorstapel für ferroelektrischen transistor undkondensator |
US10930751B2 (en) | 2017-12-15 | 2021-02-23 | Micron Technology, Inc. | Ferroelectric assemblies |
US10553673B2 (en) | 2017-12-27 | 2020-02-04 | Micron Technology, Inc. | Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitor |
US10748931B2 (en) | 2018-05-08 | 2020-08-18 | Micron Technology, Inc. | Integrated assemblies having ferroelectric transistors with body regions coupled to carrier reservoirs |
US11502103B2 (en) | 2018-08-28 | 2022-11-15 | Intel Corporation | Memory cell with a ferroelectric capacitor integrated with a transtor gate |
US10707298B2 (en) | 2018-09-05 | 2020-07-07 | Micron Technology, Inc. | Methods of forming semiconductor structures |
US11018229B2 (en) | 2018-09-05 | 2021-05-25 | Micron Technology, Inc. | Methods of forming semiconductor structures |
US10790145B2 (en) | 2018-09-05 | 2020-09-29 | Micron Technology, Inc. | Methods of forming crystallized materials from amorphous materials |
US20200098926A1 (en) * | 2018-09-26 | 2020-03-26 | Intel Corporation | Transistors with ferroelectric gates |
US11476261B2 (en) * | 2019-02-27 | 2022-10-18 | Kepler Computing Inc. | High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor |
CN113454779A (zh) | 2019-03-06 | 2021-09-28 | 美光科技公司 | 具有耦合到载流子槽结构的晶体管主体区域的集成组合件;以及形成集成组合件的方法 |
US10971500B2 (en) * | 2019-06-06 | 2021-04-06 | Micron Technology, Inc. | Methods used in the fabrication of integrated circuitry |
US11063131B2 (en) * | 2019-06-13 | 2021-07-13 | Intel Corporation | Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering |
US11335790B2 (en) * | 2019-09-20 | 2022-05-17 | Sandisk Technologies Llc | Ferroelectric memory devices with dual dielectric confinement and methods of forming the same |
KR20210035553A (ko) * | 2019-09-24 | 2021-04-01 | 삼성전자주식회사 | 도메인 스위칭 소자 및 그 제조방법 |
US11139315B2 (en) * | 2019-10-31 | 2021-10-05 | Qualcomm Incorporated | Ferroelectric transistor |
US11515309B2 (en) | 2019-12-19 | 2022-11-29 | Sunrise Memory Corporation | Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array |
US20220285497A1 (en) * | 2019-12-30 | 2022-09-08 | Unist(Ulsan National Institute Of Science And Technology) | Transistor, ternary inverter comprising same, and transistor manufacturing method |
KR102336608B1 (ko) * | 2019-12-30 | 2021-12-09 | 울산과학기술원 | 트랜지스터, 이를 포함하는 삼진 인버터, 및 트랜지스터의 제조 방법 |
US11424268B2 (en) * | 2020-01-08 | 2022-08-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
KR20210138993A (ko) * | 2020-05-13 | 2021-11-22 | 삼성전자주식회사 | 박막 구조체 및 이를 포함하는 반도체 소자 |
US11569382B2 (en) * | 2020-06-15 | 2023-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of fabricating the same |
US11980037B2 (en) | 2020-06-19 | 2024-05-07 | Intel Corporation | Memory cells with ferroelectric capacitors separate from transistor gate stacks |
US20210399137A1 (en) * | 2020-06-23 | 2021-12-23 | Taiwan Semiconductor Manufacturing Company Limited | Interfacial dual passivation layer for a ferroelectric device and methods of forming the same |
US11581335B2 (en) * | 2020-06-23 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company Limited | Ferroelectric tunnel junction devices with metal-FE interface layer and methods for forming the same |
US11302529B2 (en) * | 2020-07-09 | 2022-04-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Seed layer for ferroelectric memory device and manufacturing method thereof |
US20220140146A1 (en) * | 2020-10-30 | 2022-05-05 | Applied Materials, Inc. | Ferroelectric devices enhanced with interface switching modulation |
US11996462B2 (en) | 2020-11-13 | 2024-05-28 | Sandisk Technologies Llc | Ferroelectric field effect transistors having enhanced memory window and methods of making the same |
US11545506B2 (en) * | 2020-11-13 | 2023-01-03 | Sandisk Technologies Llc | Ferroelectric field effect transistors having enhanced memory window and methods of making the same |
US11594553B2 (en) | 2021-01-15 | 2023-02-28 | Sandisk Technologies Llc | Three-dimensional ferroelectric memory device containing lattice-matched templates and methods of making the same |
US20220278115A1 (en) * | 2021-02-26 | 2022-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric Memory Device and Method of Manufacturing the Same |
US11557609B2 (en) * | 2021-03-04 | 2023-01-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit structure and method of forming the same |
TW202310429A (zh) | 2021-07-16 | 2023-03-01 | 美商日升存儲公司 | 薄膜鐵電電晶體的三維記憶體串陣列 |
US20230022269A1 (en) * | 2021-07-23 | 2023-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor dies including low and high workfunction semiconductor devices |
CN117561804A (zh) * | 2021-10-21 | 2024-02-13 | 华为技术有限公司 | 铁电器件、存储装置及电子设备 |
CN114023876B (zh) * | 2021-10-29 | 2023-08-25 | 华中科技大学 | 一种基于HfO2/ZrO2或HfO2/Al2O3超晶格铁电忆阻器及其制备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09110592A (ja) * | 1995-08-04 | 1997-04-28 | Tdk Corp | 積層薄膜、電子デバイス用基板、電子デバイスおよび積層薄膜の製造方法 |
JP2002198495A (ja) * | 2000-12-25 | 2002-07-12 | Sony Corp | 半導体装置およびその製造方法 |
JP2005101517A (ja) * | 2003-09-02 | 2005-04-14 | Matsushita Electric Ind Co Ltd | 容量素子及び半導体記憶装置 |
WO2015141625A1 (ja) * | 2014-03-17 | 2015-09-24 | 株式会社 東芝 | 不揮発性記憶装置 |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5444008A (en) * | 1993-09-24 | 1995-08-22 | Vlsi Technology, Inc. | High-performance punchthrough implant method for MOS/VLSI |
US5753934A (en) | 1995-08-04 | 1998-05-19 | Tok Corporation | Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film |
JP3891603B2 (ja) | 1995-12-27 | 2007-03-14 | シャープ株式会社 | 強誘電体薄膜被覆基板、キャパシタ構造素子、及び強誘電体薄膜被覆基板の製造方法 |
JP3435966B2 (ja) | 1996-03-13 | 2003-08-11 | 株式会社日立製作所 | 強誘電体素子とその製造方法 |
JPH10182292A (ja) * | 1996-10-16 | 1998-07-07 | Sony Corp | 酸化物積層構造およびその製造方法 |
KR100219522B1 (ko) * | 1997-01-10 | 1999-09-01 | 윤종용 | 단결정 강유전체막을 구비하는 반도체장치 및 그 제조방법 |
JP3103916B2 (ja) | 1997-07-09 | 2000-10-30 | ソニー株式会社 | 強誘電体キャパシタおよびその製造方法並びにそれを用いたメモリセル |
JP3098474B2 (ja) * | 1997-10-31 | 2000-10-16 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3212930B2 (ja) * | 1997-11-26 | 2001-09-25 | 日本電気株式会社 | 容量及びその製造方法 |
US6509601B1 (en) * | 1998-07-31 | 2003-01-21 | Samsung Electronics Co., Ltd. | Semiconductor memory device having capacitor protection layer and method for manufacturing the same |
US6339238B1 (en) | 1998-10-13 | 2002-01-15 | Symetrix Corporation | Ferroelectric field effect transistor, memory utilizing same, and method of operating same |
US6172385B1 (en) | 1998-10-30 | 2001-01-09 | International Business Machines Corporation | Multilayer ferroelectric capacitor structure |
US6236076B1 (en) * | 1999-04-29 | 2001-05-22 | Symetrix Corporation | Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material |
CN1358326A (zh) * | 1999-06-10 | 2002-07-10 | 塞姆特里克斯公司 | 高介电常数的金属氧化物薄膜 |
US6495878B1 (en) | 1999-08-02 | 2002-12-17 | Symetrix Corporation | Interlayer oxide containing thin films for high dielectric constant application |
US6318647B1 (en) | 1999-08-18 | 2001-11-20 | The Procter & Gamble Company | Disposable cartridge for use in a hand-held electrostatic sprayer apparatus |
DE19946437A1 (de) | 1999-09-28 | 2001-04-12 | Infineon Technologies Ag | Ferroelektrischer Transistor |
US7700454B2 (en) | 2001-07-24 | 2010-04-20 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities |
JP2003133531A (ja) * | 2001-10-26 | 2003-05-09 | Fujitsu Ltd | 電子装置とその製造方法 |
US6878980B2 (en) | 2001-11-23 | 2005-04-12 | Hans Gude Gudesen | Ferroelectric or electret memory circuit |
US6773930B2 (en) | 2001-12-31 | 2004-08-10 | Texas Instruments Incorporated | Method of forming an FeRAM capacitor having a bottom electrode diffusion barrier |
US7053433B1 (en) * | 2002-04-29 | 2006-05-30 | Celis Semiconductor Corp. | Encapsulated ferroelectric array |
US7164165B2 (en) * | 2002-05-16 | 2007-01-16 | Micron Technology, Inc. | MIS capacitor |
JP4331442B2 (ja) | 2002-06-14 | 2009-09-16 | 富士通マイクロエレクトロニクス株式会社 | 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ |
JP3840207B2 (ja) * | 2002-09-30 | 2006-11-01 | 株式会社東芝 | 絶縁膜及び電子素子 |
US7314842B2 (en) * | 2002-10-21 | 2008-01-01 | E.I. Du Pont De Nemours And Company | Substituted barium titanate and barium strontium titanate ferroelectric compositions |
DE10303316A1 (de) * | 2003-01-28 | 2004-08-12 | Forschungszentrum Jülich GmbH | Schneller remanenter Speicher |
KR20040070564A (ko) * | 2003-02-04 | 2004-08-11 | 삼성전자주식회사 | 강유전체 커패시터 및 그 제조방법 |
JP4901105B2 (ja) | 2003-04-15 | 2012-03-21 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP3892424B2 (ja) * | 2003-07-24 | 2007-03-14 | 松下電器産業株式会社 | 強誘電体容量素子の製造方法 |
US7015564B2 (en) | 2003-09-02 | 2006-03-21 | Matsushita Electric Industrial Co., Ltd. | Capacitive element and semiconductor memory device |
JP2005294308A (ja) * | 2004-03-31 | 2005-10-20 | Fujitsu Ltd | 強誘電体膜を含んだ電子素子とその製造方法 |
JP4025316B2 (ja) | 2004-06-09 | 2007-12-19 | 株式会社東芝 | 半導体装置の製造方法 |
US7180141B2 (en) * | 2004-12-03 | 2007-02-20 | Texas Instruments Incorporated | Ferroelectric capacitor with parallel resistance for ferroelectric memory |
US7220600B2 (en) | 2004-12-17 | 2007-05-22 | Texas Instruments Incorporated | Ferroelectric capacitor stack etch cleaning methods |
JP4690234B2 (ja) * | 2006-03-31 | 2011-06-01 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP4882548B2 (ja) * | 2006-06-30 | 2012-02-22 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US7772014B2 (en) | 2007-08-28 | 2010-08-10 | Texas Instruments Incorporated | Semiconductor device having reduced single bit fails and a method of manufacture thereof |
US7709359B2 (en) | 2007-09-05 | 2010-05-04 | Qimonda Ag | Integrated circuit with dielectric layer |
US20090087623A1 (en) * | 2007-09-28 | 2009-04-02 | Brazier Mark R | Methods for the deposition of ternary oxide gate dielectrics and structures formed thereby |
US8304823B2 (en) | 2008-04-21 | 2012-11-06 | Namlab Ggmbh | Integrated circuit including a ferroelectric memory cell and method of manufacturing the same |
US9041082B2 (en) * | 2010-10-07 | 2015-05-26 | International Business Machines Corporation | Engineering multiple threshold voltages in an integrated circuit |
KR20140004855A (ko) * | 2012-07-03 | 2014-01-14 | 서울대학교산학협력단 | 음의 커패시턴스를 가지는 강유전체를 이용한 커패시터 소자 |
US8796751B2 (en) | 2012-11-20 | 2014-08-05 | Micron Technology, Inc. | Transistors, memory cells and semiconductor constructions |
JP2014103226A (ja) * | 2012-11-20 | 2014-06-05 | Mitsubishi Materials Corp | 強誘電体薄膜の製造方法 |
US20140147940A1 (en) * | 2012-11-26 | 2014-05-29 | Texas Instruments Incorporated | Process-compatible sputtering target for forming ferroelectric memory capacitor plates |
EP2979207A4 (en) | 2013-10-10 | 2016-11-09 | Yandex Europe Ag | METHODS AND SYSTEMS FOR INDEXING SOURCE DATA FOR DATABASE DOCUMENTS AND FOR DOCUMENT LOCATION IN THE DATABASE |
US9269785B2 (en) * | 2014-01-27 | 2016-02-23 | Globalfoundries Inc. | Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device |
US9147689B1 (en) | 2014-04-16 | 2015-09-29 | Micron Technology, Inc. | Methods of forming ferroelectric capacitors |
US9755041B2 (en) * | 2014-04-30 | 2017-09-05 | Purdue Research Foundation | NEMS devices with series ferroelectric negative capacitor |
US10242989B2 (en) * | 2014-05-20 | 2019-03-26 | Micron Technology, Inc. | Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods |
US9530833B2 (en) * | 2014-06-17 | 2016-12-27 | Globalfoundaries Inc. | Semiconductor structure including capacitors having different capacitor dielectrics and method for the formation thereof |
CN105139886B (zh) | 2015-07-24 | 2018-05-08 | Tcl移动通信科技(宁波)有限公司 | 一种应用转接装置的音乐播放方法及系统 |
US9876018B2 (en) | 2015-12-03 | 2018-01-23 | Micron Technology, Inc. | Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material |
-
2015
- 2015-12-03 US US14/958,182 patent/US9876018B2/en active Active
-
2016
- 2016-11-21 EP EP16871282.6A patent/EP3384532A4/en not_active Withdrawn
- 2016-11-21 CN CN202110941803.7A patent/CN113644194A/zh active Pending
- 2016-11-21 KR KR1020217002274A patent/KR102415069B1/ko active IP Right Grant
- 2016-11-21 CN CN201680070615.9A patent/CN108369956B/zh active Active
- 2016-11-21 JP JP2018527999A patent/JP6883038B2/ja active Active
- 2016-11-21 WO PCT/US2016/063046 patent/WO2017095678A1/en active Application Filing
- 2016-11-21 KR KR1020187017520A patent/KR20180076369A/ko not_active Application Discontinuation
- 2016-11-21 KR KR1020207023614A patent/KR102208970B1/ko active IP Right Grant
- 2016-12-02 TW TW105139886A patent/TWI600057B/zh active
-
2017
- 2017-12-13 US US15/840,251 patent/US10748914B2/en active Active
-
2020
- 2020-08-10 US US16/989,218 patent/US11552086B2/en active Active
-
2021
- 2021-02-17 JP JP2021023418A patent/JP7265570B2/ja active Active
-
2022
- 2022-11-30 US US18/072,546 patent/US11856790B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09110592A (ja) * | 1995-08-04 | 1997-04-28 | Tdk Corp | 積層薄膜、電子デバイス用基板、電子デバイスおよび積層薄膜の製造方法 |
JP2002198495A (ja) * | 2000-12-25 | 2002-07-12 | Sony Corp | 半導体装置およびその製造方法 |
JP2005101517A (ja) * | 2003-09-02 | 2005-04-14 | Matsushita Electric Ind Co Ltd | 容量素子及び半導体記憶装置 |
WO2015141625A1 (ja) * | 2014-03-17 | 2015-09-24 | 株式会社 東芝 | 不揮発性記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI600057B (zh) | 2017-09-21 |
JP6883038B2 (ja) | 2021-06-02 |
US20170162587A1 (en) | 2017-06-08 |
JP7265570B2 (ja) | 2023-04-26 |
US20180102374A1 (en) | 2018-04-12 |
US20230121892A1 (en) | 2023-04-20 |
CN108369956B (zh) | 2021-08-31 |
US9876018B2 (en) | 2018-01-23 |
US10748914B2 (en) | 2020-08-18 |
CN113644194A (zh) | 2021-11-12 |
KR102208970B1 (ko) | 2021-01-29 |
US11856790B2 (en) | 2023-12-26 |
JP2018536998A (ja) | 2018-12-13 |
EP3384532A4 (en) | 2019-07-17 |
KR102415069B1 (ko) | 2022-06-30 |
KR20180076369A (ko) | 2018-07-05 |
EP3384532A1 (en) | 2018-10-10 |
WO2017095678A1 (en) | 2017-06-08 |
KR20210011510A (ko) | 2021-02-01 |
US20200373314A1 (en) | 2020-11-26 |
US11552086B2 (en) | 2023-01-10 |
KR20200100213A (ko) | 2020-08-25 |
CN108369956A (zh) | 2018-08-03 |
TW201730922A (zh) | 2017-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7265570B2 (ja) | 強誘電体キャパシタ、強誘電体電界効果トランジスタ、並びに導電性材料及び強誘電体材料を含む電子部品の形成に用いられる方法 | |
KR102185788B1 (ko) | 강유전 소자 및 강유전 소자를 형성하는 방법 | |
US11469043B2 (en) | Electronic device comprising conductive material and ferroelectric material | |
CN110612613A (zh) | 半导体结构、存储器单元及装置、包含上述的系统及其相关联方法 | |
US8787066B2 (en) | Method for forming resistive switching memory elements with improved switching behavior | |
US20150303206A1 (en) | Methods Of Forming Ferroelectric Capacitors | |
US20130071988A1 (en) | Interfacial layer for dram capacitor | |
US8802492B2 (en) | Method for forming resistive switching memory elements | |
KR100722853B1 (ko) | 절연막의 적층증착에 의한 저항 메모리 소자의 제조방법 | |
KR102433698B1 (ko) | 커패시터 절연체를 사이에 갖는 전도성 커패시터 전극 쌍을 포함하는 커패시터의 적어도 하나의 전도성 커패시터 전극의 적어도 일 부분을 형성하는데 사용되는 방법 및 커패시터를 형성하는 방법 | |
KR20090108217A (ko) | 금속 산화물 전극을 구비하는 저항 변화 메모리 소자 및이의 동작방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210217 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220127 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220422 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221117 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230322 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230414 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7265570 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |