CN108369956A - 铁电电容器、铁电场效应晶体管及在形成包含导电材料与铁电材料的电子组件时使用的方法 - Google Patents
铁电电容器、铁电场效应晶体管及在形成包含导电材料与铁电材料的电子组件时使用的方法 Download PDFInfo
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- CN108369956A CN108369956A CN201680070615.9A CN201680070615A CN108369956A CN 108369956 A CN108369956 A CN 108369956A CN 201680070615 A CN201680070615 A CN 201680070615A CN 108369956 A CN108369956 A CN 108369956A
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- ferroelectric
- ferroelectricity
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- insulating material
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Classifications
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
一种在形成包含导电材料与铁电材料的电子组件时使用的方法包含在衬底上方形成非铁电含金属氧化物的绝缘体材料。在所述衬底上方形成包含至少两种不同组合物非铁电金属氧化物的复合堆叠。所述复合堆叠具有至少1×102西门子/厘米的总体导电率。使用所述复合堆叠来使所述非铁电含金属氧化物的绝缘体材料变为铁电的。在所述复合堆叠及所述绝缘体材料上方形成导电材料。本发明还揭示独立于制造方法的铁电电容器及铁电场效应晶体管。
Description
技术领域
本文中所揭示的实施例涉及铁电电容器、涉及铁电场效应晶体管及涉及在形成包含导电材料与铁电材料的电子组件时使用的方法。
背景技术
存储器是一种类型的集成电路,且在计算机系统中用于存储数据。可将存储器制作成一或多个个别存储器单元阵列。可使用数字线(其也可称为位线、数据线、感测线或数据/感测线)及存取线(其也可称为字线)来写入或读取存储器单元。所述数字线可沿着阵列的列以导电方式互连存储器单元,且所述存取线可沿着阵列的行以导电方式互连存储器单元。每一存储器单元可通过数字线与存取线的组合而唯一地寻址。
存储器单元可是易失性的或非易失性的。非易失性存储器单元可存储数据达经延长时间段(包括当计算机关断时)。易失性存储器耗散且因此在许多例子中需要每秒多次地经刷新/经重新写入。不管如何,存储器单元经配置以将存储器保持或存储于至少两个不同可选择状态中。在二进制系统中,将所述状态视为“0”或“1”。在其它系统中,至少一些个别存储器单元可经配置以存储多于两个信息等级或信息状态。
电容器是可在存储器单元中使用的一种类型的电子组件。电容器具有由电绝缘材料分离的两个电导体。作为电场的能量可以静电方式存储于此材料内。一种类型的电容器是具有作为绝缘材料的至少部分的铁电材料的铁电电容器。铁电材料由具有两个稳定极化状态表征且借此可包含存储器单元的可编程材料。铁电材料的极化状态可通过施加适合的编程电压而改变,且在移除编程电压之后保持(至少达一时间)。每一极化状态具有与另一极化状态不同的电荷存储电容,且理想地所述电荷存储电容可用于在不反转极化状态(直到期望如此反转为止)的情况下写入(即,存储)及读取存储器状态。较不合意的是,在具有铁电电容器的一些存储器中,读取存储器状态的动作可反转极化。因此,在确定极化状态之后,即刻进行向存储器单元的重新写入以在极化状态的确定之后立即使存储器单元进入预读取状态。不管如何,由于形成电容器的一部分的铁电材料的双稳定特性,因此并入有铁电电容器的存储器单元理想地是非易失性的。一种类型的存储器单元具有以串联方式与铁电电容器电耦合的选择装置。
场效应晶体管是可在存储器单元中使用的另一类型的电子组件。这些晶体管包含在其之间具有半导电沟道区域的一对导电源极/漏极区域。导电栅极邻近所述沟道区域且通过薄栅极绝缘体材料与其分离。将适合电压施加到所述栅极允许电流穿过所述沟道区域从所述源极/漏极区域中的一者流动到另一者。当从所述栅极移除所述电压时,很大程度上防止电流流动穿过所述沟道区域。场效应晶体管也可包括额外结构,举例来说,作为栅极构造的一部分的可逆地可编程电荷存储区域。另外或另一选择是,可在存储器单元中使用除场效应晶体管之外的晶体管,举例来说,双极晶体管。
一种类型的晶体管是铁电场效应晶体管(FeFET),其中栅极构造的至少某一部分包含铁电材料。再次,此些材料由两个稳定极化状态表征。场效应晶体管中的这些不同状态可由针对晶体管的不同阈值电压(Vt)或由针对选定操作电压的不同沟道导电率表征。可通过施加适合的编程电压而改变铁电材料的极化状态,且此导致高沟道电导或低沟道电导中的一者。通过铁电极化状态引发的高及低电导在移除编程栅极电压之后保持(至少达一时间)。可通过施加小漏极电压(其并不干扰铁电极化)而读取沟道电导的状态。
可在除存储器电路之外的电路中使用电容器及晶体管。
附图说明
图1是根据本发明的实施例的工艺中的衬底片段的图解性截面图。
图2是处于在由图1所展示的处理步骤之后的处理步骤处的图1衬底的图式。
图3是处于在由图2所展示的处理步骤之后的处理步骤处的图2衬底的图式。
图4是根据本发明的实施例的工艺中的衬底片段的图解性截面图。
图5是根据本发明的实施例的工艺中的衬底片段及根据本发明的实施例的衬底片段的图解性截面图。
图6是根据本发明的实施例的工艺中的衬底片段及根据本发明的实施例的衬底片段的图解性截面图。
图7是根据本发明的实施例的工艺中的衬底片段及根据本发明的实施例的衬底片段的图解性截面图。
图8是根据本发明的实施例的工艺中的衬底片段及根据本发明的实施例的衬底片段的图解性截面图。
图9是根据本发明的实施例的工艺中的衬底片段及根据本发明的实施例的衬底片段的图解性截面图。
图10是根据本发明的实施例的工艺中的衬底片段及根据本发明的实施例的衬底片段的图解性截面图。
具体实施方式
本发明的实施例囊括一种在形成包含导电材料与铁电材料的电子组件时使用的方法。本发明的实施例也囊括独立于制造方法的铁电电容器。本发明的实施例也囊括独立于制造方法的铁电场效应晶体管。
参考图1,最初将关于包含基底衬底12且可包含半导体衬底的实例性衬底片段10描述方法实施例。在本文件的上下文中,术语“半导体衬底”或“半导电衬底”经定义为意指包含半导电材料的任何构造,所述半导电材料包括但不限于块体半导电材料(例如,半导电晶片)(单独地或以其上包含其它材料的组合件方式)及半导电材料层(单独地或以包含其它材料的组合件方式)。术语“衬底”是指任何支撑结构,包括但不限于上文所描述的半导电衬底。材料在可图1所描绘的材料的旁边、竖立在所描绘的材料里面或竖立在所描绘的材料外面。举例来说,可将集成电路的其它经部分或完全制作的组件设置于片段10周围或片段10内的某处。
衬底12可包含导电/导体材料(即,在本文中导电)、半导电材料或绝缘/绝缘体材料(即,在本文中电绝缘)中的任何一或多者。在本文件的上下文中,导体/导电材料具有至少3×104西门子/厘米的组成固有导电率(即,在本文中的各处,在20℃下),所述组成固有导电率与可通过正电荷或负电荷穿过原本固有地绝缘的薄材料的移动而发生的导电率形成对照。绝缘体/绝缘材料具有不大于1×10-9西门子/厘米的组成固有导电率(即,其具电阻性,与导电或半导电形成对照)。本文中所描述的材料、区域及结构中的任一者可是同质的或非同质的,且不管如何在其上覆的任何材料上方可是连续的或不连续的。此外,除非另外陈述,否则可使用任何适合的或尚待开发的技术形成每一材料,其中原子层沉积、化学气相沉积、物理气相沉积、外延生长、扩散掺杂及离子植入是实例。
已在衬底12上方形成非铁电含金属氧化物的绝缘体材料14。可使用任何适合的现有或尚待开发的非铁电含金属氧化物的绝缘体材料。在一个实施例中,非铁电绝缘体材料包含过渡金属氧化物:锆、氧化锆、铪、氧化铪、钛酸锆铅、氧化钽、氧化锶、氧化锶钛、氧化钛及钛酸钡锶中的一或多者,且过渡金属氧化物中可具有包含硅、铝、镧、钇、铒、钙、镁、锶、镥、镝、钆、镨、铬、铌、钽、铪、锆、钒锰、钴、镍、碳及任何其它稀土元素中的一或多者的掺杂剂。一个特定实例包括其中具有适合的掺杂剂的基于铪及锆的氧化物。其它实例包括其中具有适合的掺杂剂的基于铪及硅的氧化物;其中具有适合的掺杂剂的基于钇及锆的氧化物;及基于铪、硅及锆的氧化物。可以任何相(例如,非晶或结晶)沉积绝缘体材料14且此相可在后续处理期间保持或改变。以实例方式,可使用博斯克(Boeske)等人的第7,709,359号美国专利及/或博斯克的第8,304,823号美国专利中所描述的非铁电含金属氧化物的绝缘体材料中的任一者,且此些参考以引用方式并入本文中。
绝缘体材料14的实例性厚度是从约10埃到约200埃,且在一个实施例中从约30埃到约90埃。在此文件中,“厚度”本身(无先前指向性形容词)定义为与具不同组合物的紧邻材料或紧邻区域的最接近表面垂直穿过给定材料或区域的平均直线距离。另外,本文中所描述的各种材料及区域可是基本上恒定厚度或可变厚度。如果是可变厚度,那么除非另外指示,否则厚度是指平均厚度,且由于厚度是可变的因此此材料或区域将具有某一最小厚度及某一最大厚度。如本文中所使用,“不同组合物”仅要求具两种状态的材料或区域的可彼此直接抵靠的那些部分在化学上及/或在物理上不同(举例来说,如果此些材料或区域是不同质的)。如果两种状态的材料或区域彼此不直接抵靠,那么“不同组合物”仅要求两种状态的材料或区域的彼此最接近的那些部分在化学上及/或在物理上不同(如果此些材料或区域是不同质的)。在此文件中,当存在材料、区域或结构相对于彼此的至少某一物理接触触点时,所陈述的材料、区域或结构“直接抵靠”另一者。相比来说,前面无“直接地”的“在...上方”、“在...上”、“邻近”、“沿着”及“抵靠”囊括“直接抵靠”以及其中介入材料、区域或结构导致所陈述的材料、区域或结构相对于彼此的无物理接触触点的构造。
参考图2,已在衬底12上方(且在一个实施例中如所展示在含金属氧化物的绝缘体材料14上方)形成包含至少两种不同组合物非铁电金属氧化物的复合堆叠16。在本文件的上下文中,“复合堆叠”意指包含多个层的构造,其中至少两种不同组合物非铁电金属氧化物中的个别者是在不同层中且不排除至少一些紧邻层的互混。“层(layer及layers)”的使用并不要求将层毯覆或完全覆盖在下伏材料上方,而是层在下伏材料上方层可是不连续的或仅经部分地接纳。不管如何,复合堆叠具有至少1×102西门子/厘米的总体导电率。在一个实施例中,复合堆叠具有不大于1×103西门子/厘米的总体导电率。复合堆叠16的实例性总体厚度是从约5埃到约50埃,且在一个实施例中从约10埃到约20埃。
在一个理想实施例中且如所展示,复合堆叠16及含金属氧化物的绝缘体材料14形成为彼此直接抵靠。在一个实施例中,所述至少两种不同组合物非铁电金属氧化物中的每一者具有至少1×102西门子/厘米的导电率。在一个实施例中,所述至少两种不同组合物非铁电金属氧化物中的至少一者不具有至少1×102西门子/厘米的导电率(即,使另一非铁电金属氧化物材料的组合物及体积充分使得总体复合堆叠具有至少1×102西门子/厘米的导电率)。在一个实施例中,所述至少两种不同组合物非铁电金属氧化物是从以下各项当中选出:TiOx、AlOx、Al2O3、ScOx、Sc2O3、ZrOx、YOx、Y2O3、MgOx、MgO、HfOx、SrOx、SrO、TaxOy、NbOx、GdOx、MoOx、RuOx、LaOx、VxOy、IrOx、CrOx、ZnOx、PrOx、CeOx、SmOx及LuOx,其中如本文中针对氧化物在经验公式中使用的“x”是任何适合的数字使得材料中的至少某种包含分子氧化物,但其可能未必在所有材料中都是总体化学计量或甚至此材料的大部分是化学计量。可取决于组合物中的金属原子及氧原子的量而实现所要导电率/电阻率。
图2将复合堆叠16描绘为包含四个层18、20、22及24,其中每一层仅以实例方式展示为具有相同恒定厚度。可使用较少层(即,不同组合物的至少两个层)或可使用多于四个层,且与是否为相同相应厚度、不同相应厚度、相同或不同可变厚度等无关。在一个实施例中,将复合堆叠形成为包含仅两种不同组合物非铁电金属氧化物(例如,按上文仅两种不同组合物非铁电金属氧化物是从以下各项当中选出:TiOx、AlOx、Al2O3、ScOx、Sc2O3、ZrOx、YOx、Y2O3、MgOx、MgO、HfOx、SrOx、SrO、TaxOy、NbOx、GdOx、MoOx、RuOx、LaOx、VxOy、IrOx、CrOx、ZnOx、PrOx、CeOx、SmOx及LuOx)。在一个实施例中,将复合堆叠形成为包含两种不同组合物非铁电金属氧化物中的每一者的两个交替层(且在一个实施例中仅两个交替层)(例如,A/B/A/B,其中A及B仅是TiOx、AlOx、Al2O3、ScOx、Sc2O3、ZrOx、YOx、Y2O3、MgOx、MgO、HfOx、SrOx、SrO、TaxOy、NbOx、GdOx、MoOx、RuOx、LaOx、VxOy、IrOx、CrOx、ZnOx、PrOx、CeOx、SmOx及LuOx中的两个不同者)。在一个实施例中,将所述复合堆叠形成为基本上由所述至少两种不同组合物非铁电金属氧化物组成。然而在另一实施例中,将复合堆叠形成为包含额外材料,举例来说另外包含SiOx(例如,在复合堆叠内及/或作为复合堆叠的竖立最外或最内层)。
参考图3,已在复合堆叠16及绝缘体材料14上方形成导电材料26,且在一个实施例中如所展示直接抵靠复合堆叠16。在一个实施例中,复合堆叠16比导电材料26的导电率低。导电材料26的实例性厚度是50埃。可使用任何适合的导电材料,其中元素金属、两种或多于两种元素金属的合金、导电金属化合物及导电掺杂半导电材料是实例。
根据方法实施例,使用复合堆叠16来使非铁电含金属氧化物的绝缘体材料14变为铁电的。复合堆叠16在成品电路构造中保持非铁电。材料14在从非铁电到铁电的转换之前及之后均是绝缘的。包含至少两种不同组合物非铁电金属氧化物的复合堆叠能够使非铁电含金属氧化物的绝缘体材料14变为铁电的。在一个实施例中,在形成导电材料26中的任一者之前使含金属氧化物的绝缘体材料14变为铁电的。另一选择是,在形成导电材料26中的一些或所有之后使含金属氧化物的绝缘体材料14变为铁电的。
在一个实施例中,在复合堆叠16在非铁电含金属氧化物的绝缘体材料14上方的沉积期间,使用复合堆叠16来使绝缘体材料14变为铁电的。仅作为用于将复合堆叠16沉积为TiOx与ZrOx的交替层的化学气相沉积方法中的一个实例,五甲基环戊二烯基三甲醇钛、三(二甲基胺基)环戊二烯基锆及臭氧可分别用作钛、锆及氧的前驱物。实例性相应流率是100sccm到2,000sccm、100sccm到2,000sccm及1,000sccm到20,000sccm。实例性温度及压力范围是200℃到350℃及0.1托到5托。可或可不使用等离子体(无论是直接或远程)。此些实例性沉积条件将足以在复合堆叠16的沉积期间使非铁电材料14变为铁电的。可由所属领域的技术人员确定及选定替代条件(一些包括不同前驱物)。
在一个实施例中,在复合堆叠16在非铁电含金属氧化物的绝缘体材料14上方的沉积之后,使用复合堆叠16来使绝缘体材料14变为铁电的。此些实例性条件包括在炉中使用具有至少350℃的周围环境或衬底温度、从0.1托到7,600托的压力的惰性气氛退火达至少5秒。可使用复合堆叠16来使非铁电含金属氧化物的绝缘体材料14部分地在复合堆叠16的沉积期间且部分地在复合堆叠16的沉积之后变为铁电的。
接下来,参考图4及衬底片段10a描述以上关于图1到3描述和展示的实施例方法的在形成电子组件时使用的替代实施例方法。已在适当情况下使用来自上文所描述的实施例的相同编号,其中一些构造差异是以后缀“a”或以不同编号指示。衬底片段10a包含非铁电含金属氧化物的绝缘材料28,所述非铁电含金属氧化物的绝缘材料在包含电子组件的成品电路构造中是非铁电的。因此,上文关于图1所描述的处理将稍微不同,在于非铁电含金属氧化物的绝缘体材料14形成于绝缘材料28上方(且在一个实施例中直接抵靠绝缘材料)。实例性非铁电绝缘材料28包括第5页第13行到第5页第27行中的任何绝缘非铁电金属氧化物。绝缘材料28的实例性厚度范围是从约1埃到约10埃,且在一个实施例中从约2埃到约5埃。绝缘材料28可促进或用于在非铁电含金属氧化物的绝缘体材料14中(在最初形成时)及/或在变为铁电的含金属氧化物的绝缘体材料14(即,在其变为铁电之后)中引发所要结晶结构。可在图4实施例中使用如上文在图1到3中所描述及/或所展示的任何其它属性或方面。
可关于衬底片段10/10a进行如下文所描述的后续处理。举例来说,图5展示已对绝缘体材料14、复合堆叠16及导电材料26进行图案化以形成铁电场效应晶体管35的铁电栅极构造30,其中铁电材料14充当栅极绝缘体。基底衬底12可包含用以提供操作地接近栅极构造30的半导电沟道32及在基底衬底的相对侧上的一对源极/漏极区域34的经适合掺杂半导电材料。使非铁电材料14变为铁电的可发生在由图5所描绘的图案化之前或之后。此外且不管如何,尽管展示简单平面及水平铁电场效应晶体管35,但也可形成垂直、凹陷、非线性沟道构造等,且无论现有或尚待开发。在此文件中,“水平”是指沿着在制作期间相对于其处理衬底的主要表面的大体方向,且“垂直”是大体正交于其的方向。此外,如本文中所使用的“垂直”及“水平”是在三维空间中独立于衬底的定向而相对于彼此大体垂直的方向。进一步在此文件中,“竖直”、“上部”、“下部”、“顶部”、“底部”及“下面”是指相对于上面制作电路的基底衬底的垂直方向。
上文所描述的处理在形成复合堆叠16之前形成绝缘体材料14。另一选择是,可在形成绝缘体材料14之前形成复合堆叠16。在一个此类实施例中,在衬底上方形成包含至少两种不同组合物非铁电金属氧化物的复合堆叠。复合堆叠具有至少1×102西门子/厘米的总体导电率。在复合堆叠上方形成含金属氧化物的绝缘体材料且在一个实施例中,通过使用所述复合堆叠来使所述绝缘体材料变为铁电的而使所述绝缘体材料在其最初形成之后即刻变为铁电的,所述绝缘体材料原本将为在不存在(即,如果没有)所述复合堆叠的情况下在相同条件(例如,相同处理器制成模型、前驱物、流率、温度、压力、时间等所有条件)下形成的非铁电含金属氧化物的绝缘体材料。仅作为形成此铁电含金属氧化物的绝缘体材料的一个实例,可使用任何适合的前驱物以及200℃到350℃及0.1托到5托的温度及压力范围,并且在有或无等离子体的情况下进行化学气相沉积。在所述复合堆叠及所述绝缘体材料上方形成导电材料。可使用如上文所展示及/或所描述的任何其它属性或方面。
图6展示铁电场效应晶体管35b的实例性替代铁电栅极构造30b。已在适当情况下使用来自上文所描述的实施例的相同编号,其中一些构造差异是以后缀“b”指示。已展示复合堆叠16形成于沟道32上方(且在一个实施例中直接抵靠沟道),且在绝缘体材料14的形成之前形成。导电材料26形成于绝缘体材料14上方(且在一个实施例中直接抵靠绝缘体材料)。可使用如上文所展示及/或所描述的任何其它属性或方面。
图7中关于衬底片段10c展示可利用本发明的方法实施例制作的替代实例性构造。已在适当情况下使用来自上文所描述的实施例的相同编号,其中一些构造差异是以后缀“c”或以不同编号指示。衬底10c包含铁电电容器40。此可通过在图1的基底衬底12上方形成非铁电含金属氧化物的绝缘体材料14之前在基地衬底上方形成导体材料42而制作。导体材料42可包含上文针对导电材料26所描述的材料中的任一者,且导体材料42及导电材料26相对于彼此可具有相同组合物或不同组合物(及相同或不同厚度)。处理可在其它方面以上文所描述的方式中的任一者发生。导电材料26、复合堆叠16、绝缘体材料14及导体材料42展示为然后被图案化成铁电电容器构造40。可使用复合堆叠16来使绝缘体材料14在由图7展示的实例性图案化之前、之后、期间(或其中两者)变为铁电的。
图8展示根据上文的实例性方法实施例制造的替代实施例铁电电容器40d,借此已在形成绝缘体材料14之前形成复合堆叠16。已在适当情况下使用来自上文所描述的实施例的相同编号,其中一些构造差异是以后缀“d”指示。可使用如上文所展示及/或所描述的任何其它属性或方面。
上文所描述的实施例形成单个复合堆叠区域16。图9展示包含两个复合堆叠16的替代实例性铁电电容器构造40e。已在适当情况下使用来自上文所描述的实施例的相同编号,其中一些构造差异是以后缀“e”指示。复合堆叠16无需相对于彼此具有相同构造及/或组合物,且可理想地相对于彼此具有不同构造及/或组合物。可使用如上文所展示及/或所描述的任何其它属性或方面。
如图10中所展示,也可制作具有带有多于一个复合堆叠区域16的栅极构造35f的铁电场效应晶体管30f。已在适当情况下使用来自上文所描述的实施例的相同编号,其中在图10中一些构造差异是以后缀“f”指示。可使用如上文所展示及/或所描述的任何其它属性或方面。
本发明的实施例包括独立于制造方法的铁电电容器,例如,在图7到9中展示的铁电电容器40、40d及40e。根据本发明的装置实施例的此铁电电容器包含两个导电电容器电极(例如,材料26及42),所述两个导电电容器电极在其之间具有铁电材料(例如,铁电绝缘体材料14,且与其是否包括氧化物材料无关)。非铁电材料是在所述导电电容器电极中的至少一者与所述铁电材料之间。非铁电材料包含至少两种不同组合物非铁电金属氧化物的复合堆叠(例如,复合堆叠16)。非铁电材料具有至少1×102西门子/厘米的总体导电率且比非铁电材料较接近的导电电容器电极(例如,图7中的电极26及图8中的电极42)的导电率低。铁电材料可在导电电容器电极中的仅一者与铁电材料之间(例如,图7或8),或可在导电电容器电极中的每一者与铁电材料之间(例如,图9)。如上文在方法实施例中所描述的任何其它属性可用于或施加于根据本发明的独立于制造方法的铁电电容器装置构造中。
本发明的实施例包含独立于制造方法的铁电场效应晶体管。此晶体管包含在其之间具有半导电沟道(例如,沟道32)的一对源极/漏极区域(例如,区域34)。此铁电场效应晶体管还包含包括铁电栅极绝缘体材料(例如,材料14,且与是否包含氧化物材料无关)及导电栅极电极(例如,材料26)的栅极构造(例如,构造30/30b/30f)。铁电场效应晶体管也在a)铁电栅极绝缘体材料与导电栅极电极及b)铁电栅极绝缘体材料与沟道中的至少一者之间包含非铁电材料。非铁电材料包含至少两种不同组合物非铁电金属氧化物的复合堆叠(例如,复合堆叠16)。非铁电材料具有至少1×102西门子/厘米的总体导电率且比栅极电极的导电率低。图5、6及10描绘仅此三个实例性实施例,且可在根据本发明的独立于制造方法的铁电场效应晶体管装置构造中采用如上文关于方法实施例所描述的任何其它属性。
形成不包括复合堆叠16的构造的前导工艺要求导电材料26的组合物针对非铁电含金属氧化物的绝缘体材料14为TiN,非铁电含金属氧化物的绝缘体材料14经沉积(且因此在形成TiN期间及/或之后)随后变为铁电的。TiN可并不在所有成品电路构造中均是合意的,且复合堆叠16的提供使得能够使用除TiN之外的导电材料26的组合物(例如,例如IrOx、SrRuO3、RuOx及LSCO的导电金属氧化物;例如TiSix、TaSix及RuSix的硅化物;WNxSiy;Ru;及例如TiAlN、TaN、WNx、TiSixNy、TaSixNy、RuSixNy及RuSixTiyNz的其它导电金属氮化物)。使用除TiN之外的导电材料可降低所需的对衬底的总体热处理。此外,使用除TiN之外的导电电极材料可改善铁电材料在总体电子组件中的性能。然而,在一个实施例中,导电材料26包含TiN且在另一实施例中无TiN。在导电材料26与绝缘体材料14之间仅提供非铁电金属氧化物材料的单个组合物(此在本发明的范围之外)是不足的,因为其要求专用沉积后退火及/或产生到所要结晶相的较低程度的转换,无论最初是非晶型或最初是非所要结晶相。
使用如本文中所描述的复合堆叠可改善工作周期性能。举例来说,考虑包含根据前导技术制造的在其之间具有65埃铁电电容器绝缘体的TiN顶部及底部电极的铁电电容器(即,在不存在本文中所描述的复合堆叠的情况下在所述电极之间的单个同质绝缘体组合物)。考虑根据本发明制造的包含相同65埃铁电电容器绝缘体且另外具有包含在顶部TiN电容器电极与65埃铁电电容器绝缘体之间的材料A及材料B的四个交替层(约15埃的总厚度)的复合堆叠的构造,其中材料A及材料B仅是TiOx、AlOx、ScOx、ZrOx、YOx、MgOx、HfOx、SrOx、TaxOy、NbOx、GdOx、MoOx、RuOx、LaOx、VxOy、IrOx、CrOx、ZnOx、PrOx、CeOx、SmOx及LuOx中的两个不同者。根据本发明制造的此构造显示经改善工作周期性能。
总结
在一些实施例中,一种在形成包含导电材料与铁电材料的电子组件时使用的方法包含在衬底上方形成非铁电含金属氧化物的绝缘体材料。在所述衬底上方形成包含至少两种不同组合物非铁电金属氧化物的复合堆叠。所述复合堆叠具有至少1×102西门子/厘米的总体导电率。使用所述复合堆叠来使非铁电含金属氧化物的绝缘体材料变为铁电的。在所述复合堆叠及所述绝缘体材料上方形成导电材料。
在一些实施例中,一种在形成包含导电材料与铁电材料的电子组件时使用的方法包含在衬底上方形成包含至少两种不同组合物非铁电金属氧化物的复合堆叠。所述复合堆叠具有至少1×102西门子/厘米的总体导电率。在所述复合堆叠上方形成含金属氧化物的绝缘体材料且使其在最初形成之后即刻变为铁电的,此是通过使用所述复合堆叠使原本将变为在不存在所述复合堆叠的情况下在相同条件下形成的非铁电含金属氧化物的绝缘体材料变为铁电的而实现。在所述复合堆叠及所述绝缘体材料上方形成导电材料。
在一些实施例中,铁电电容器包含在其之间具有铁电材料的两个导电电容器电极。非铁电材料是在所述导电电容器电极中的至少一者与所述铁电材料之间。所述非铁电材料包含包括至少两种不同组合物非铁电金属氧化物的复合堆叠。所述非铁电材料具有至少1×102西门子/厘米的总体导电率且比非铁电材料较接近的导电电容器电极的导电率低。
在一些实施例中,铁电场效应晶体管包含在其之间具有半导电沟道的一对源极/漏极区域。并且,铁电场效应晶体管的栅极构造包含铁电栅极绝缘体材料及导电栅极电极。栅极构造也在a)所述铁电栅极绝缘体材料与所述导电栅极电极及b)所述铁电栅极绝缘体材料与所述沟道中的至少一者之间包括非铁电材料。所述非铁电材料包含包括至少两种不同组合物非铁电金属氧化物的复合堆叠。所述非铁电材料具有至少1×102西门子/厘米的总体导电率且比所述栅极电极的导电率低。
按照条例,已在语言上关于结构及方法特征较特定或较不特定描述本文中所揭示的标的物。然而,应理解,由于本文中所揭示的构件包含实例性实施例,因此权利要求书并不限于所展示及所描述的特定特征。因此,权利要求书是由字面措辞来提供完整范围,且根据等效内容的教义适当地予以解释。
Claims (30)
1.一种在形成包含导电材料与铁电材料的电子组件时使用的方法,所述方法包含:
在衬底上方形成非铁电含金属氧化物的绝缘体材料;
在所述衬底上方形成包含至少两种不同组合物非铁电金属氧化物的复合堆叠,所述复合堆叠具有至少1×102西门子/厘米的总体导电率;
使用所述复合堆叠来使所述非铁电含金属氧化物的绝缘体材料变为铁电的;及
在所述复合堆叠及所述绝缘体材料上方形成导电材料。
2.根据权利要求1所述的方法,其中所述复合堆叠具有不大于1×103西门子/厘米的总体导电率。
3.根据权利要求1所述的方法,其中在形成所述导电材料中的任一者之前使所述含金属氧化物的绝缘体材料变为铁电的。
4.根据权利要求1所述的方法,其包含在形成所述复合堆叠之前形成所述绝缘体材料。
5.根据权利要求1所述的方法,其包含在形成所述绝缘体材料之前形成所述复合堆叠。
6.根据权利要求1所述的方法,其中将所述复合堆叠形成为基本上由所述至少两种不同组合物非铁电金属氧化物组成。
7.根据权利要求1所述的方法,其中将所述复合堆叠形成为另外包含SiO2。
8.根据权利要求1所述的方法,其包含将所述复合堆叠形成为比所述导电材料的导电率低。
9.根据权利要求1所述的方法,其包含将所述复合堆叠与所述绝缘体材料形成为彼此直接抵靠。
10.根据权利要求9所述的方法,其中将所述复合堆叠形成为基本上由所述至少两种不同组合物非铁电金属氧化物组成。
11.根据权利要求1所述的方法,其包含将所述导电材料形成为直接抵靠所述复合堆叠。
12.根据权利要求11所述的方法,其中将所述复合堆叠形成为基本上由所述至少两种不同组合物非铁电金属氧化物组成。
13.根据权利要求1所述的方法,其包含将所述导电材料形成为直接抵靠所述绝缘体材料。
14.根据权利要求1所述的方法,其包含在所述复合堆叠于所述非铁电含金属氧化物的绝缘体材料上方的沉积期间,使用所述复合堆叠来使所述绝缘体材料变为铁电的。
15.根据权利要求1所述的方法,其包含在所述复合堆叠于所述非铁电含金属氧化物的绝缘体材料上方的沉积之后,使用所述复合堆叠来使所述绝缘体材料变为铁电的。
16.根据权利要求1所述的方法,其包含将所述绝缘体材料、所述复合堆叠及所述导电材料图案化成铁电场效应晶体管栅极构造。
17.根据权利要求1所述的方法,其中在导体材料上方形成所述绝缘体材料,且所述方法进一步包含将所述导电材料、所述复合堆叠、所述绝缘体材料及所述导体材料图案化成铁电电容器构造。
18.根据权利要求1所述的方法,其中所述至少两种不同组合物非铁电金属氧化物中的每一者具有至少1×102西门子/厘米的导电率。
19.根据权利要求1所述的方法,其中所述至少两种不同组合物非铁电金属氧化物中的至少一者不具有至少1×102西门子/厘米的导电率。
20.根据权利要求1所述的方法,其包含将所述复合堆叠形成为仅包含两种不同组合物非铁电金属氧化物。
21.根据权利要求20所述的方法,其包含将所述复合堆叠形成为包含所述两种不同组合物非铁电金属氧化物中的每一者的两个交替层。
22.根据权利要求1所述的方法,其中所述至少两种不同组合物非铁电金属氧化物是从以下各项当中选出:TiOx、AlOx、Al2O3、ScOx、Sc2O3、ZrOx、YOx、Y2O3、MgOx、MgO、HfOx、SrOx、SrO、TaxOy、NbOx、GdOx、MoOx、RuOx、LaOx、VxOy、IrOx、CrOx、ZnOx、PrOx、CeOx、SmOx及LuOx。
23.根据权利要求1所述的方法,其中在非铁电含金属氧化物的绝缘材料上方形成所述绝缘体材料,所述非铁电含金属氧化物的绝缘材料在包含所述电子组件的成品电路构造中是非铁电的。
24.根据权利要求23所述的方法,其包含将所述绝缘体材料形成为直接抵靠所述非铁电含金属氧化物的绝缘材料。
25.根据权利要求23所述的方法,其包含使用所述非铁电含金属氧化物的绝缘材料来在所述绝缘体材料最初形成时且在其是非铁电时在所述绝缘体材料中引发所要结晶结构。
26.根据权利要求23所述的方法,其包含使用所述非铁电含金属氧化物的绝缘材料来在所述变为铁电的含金属氧化物的绝缘体材料中引发所要结晶结构。
27.根据权利要求1所述的方法,其中所述导电材料包含以下各项中的一或多者:IrOx、SrRuO3、RuOx、LSCO、TiSix、TaSix、RuSix、WNxSiy、Ru、TiAlN、TaN、WNx、TiSixNy、TaSixNy、RuSixNy及RuSixTiyNz。
28.一种在形成包含导电材料与铁电材料的电子组件时使用的方法,所述方法包含:
在衬底上方形成包含至少两种不同组合物非铁电金属氧化物的复合堆叠,所述复合堆叠具有至少1×102西门子/厘米的总体导电率;
在所述复合堆叠上方形成含金属氧化物的绝缘体材料且通过使用所述复合堆叠来使所述绝缘体材料变为铁电的而使所述绝缘体材料在其最初形成之后即刻变为铁电的,所述绝缘体材料原本将为在不存在所述复合堆叠的情况下在相同条件下形成的非铁电含金属氧化物的绝缘体材料;及
在所述复合堆叠及所述绝缘体材料上方形成导电材料。
29.一种铁电电容器,其包含:
两个导电电容器电极,其间具有铁电材料;及
所述导电电容器电极中的至少一者与所述铁电材料之间的非铁电材料,所述非铁电材料包含包括至少两种不同组合物非铁电金属氧化物的复合堆叠,所述非铁电材料具有至少1×102西门子/厘米的总体导电率且比所述非铁电材料较接近的所述导电电容器电极的导电率低。
30.一种铁电场效应晶体管,其包含:
一对源极/漏极区域,其间具有半导电沟道;及
栅极构造,其包含:
铁电栅极绝缘体材料;
导电栅极电极;及
以下各项中的至少一者之间的非铁电材料:a)所述铁电栅极绝缘体材料与所述导电栅极电极,及b)所述铁电栅极绝缘体材料与所述沟道;所述非铁电材料包含复合堆叠,所述复合堆叠包含至少两种不同组合物非铁电金属氧化物,所述非铁电材料具有至少1×102西门子/厘米的总体导电率且比所述栅极电极的导电率低。
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US11856790B2 (en) | 2023-12-26 |
JP7265570B2 (ja) | 2023-04-26 |
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JP2018536998A (ja) | 2018-12-13 |
EP3384532A1 (en) | 2018-10-10 |
KR20210011510A (ko) | 2021-02-01 |
CN108369956B (zh) | 2021-08-31 |
KR102415069B1 (ko) | 2022-06-30 |
US20200373314A1 (en) | 2020-11-26 |
KR102208970B1 (ko) | 2021-01-29 |
TWI600057B (zh) | 2017-09-21 |
US20170162587A1 (en) | 2017-06-08 |
EP3384532A4 (en) | 2019-07-17 |
US10748914B2 (en) | 2020-08-18 |
JP2021073747A (ja) | 2021-05-13 |
TW201730922A (zh) | 2017-09-01 |
US20230121892A1 (en) | 2023-04-20 |
CN113644194A (zh) | 2021-11-12 |
KR20180076369A (ko) | 2018-07-05 |
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