JP4882548B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP4882548B2 JP4882548B2 JP2006182300A JP2006182300A JP4882548B2 JP 4882548 B2 JP4882548 B2 JP 4882548B2 JP 2006182300 A JP2006182300 A JP 2006182300A JP 2006182300 A JP2006182300 A JP 2006182300A JP 4882548 B2 JP4882548 B2 JP 4882548B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive
- metal oxide
- forming
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 48
- 239000010408 film Substances 0.000 claims description 951
- 229910044991 metal oxide Inorganic materials 0.000 claims description 189
- 150000004706 metal oxides Chemical class 0.000 claims description 189
- 239000003990 capacitor Substances 0.000 claims description 154
- 238000005530 etching Methods 0.000 claims description 78
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 71
- 239000011229 interlayer Substances 0.000 claims description 69
- 229910052741 iridium Inorganic materials 0.000 claims description 69
- 239000013039 cover film Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 60
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 57
- 239000007789 gas Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 54
- 238000004544 sputter deposition Methods 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 48
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 46
- 239000001301 oxygen Substances 0.000 claims description 46
- 229910052760 oxygen Inorganic materials 0.000 claims description 46
- 239000012298 atmosphere Substances 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 239000003292 glue Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 17
- 238000005546 reactive sputtering Methods 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 42
- 229910052710 silicon Inorganic materials 0.000 description 42
- 239000010703 silicon Substances 0.000 description 42
- 239000010936 titanium Substances 0.000 description 36
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 28
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 28
- 239000010410 layer Substances 0.000 description 26
- 229910052719 titanium Inorganic materials 0.000 description 26
- 239000001257 hydrogen Substances 0.000 description 25
- 229910052739 hydrogen Inorganic materials 0.000 description 25
- 229910052697 platinum Inorganic materials 0.000 description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 23
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 23
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 21
- 229910000457 iridium oxide Inorganic materials 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 20
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- 238000001312 dry etching Methods 0.000 description 16
- 239000002245 particle Substances 0.000 description 16
- 229910052721 tungsten Inorganic materials 0.000 description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 15
- 229910021529 ammonia Inorganic materials 0.000 description 15
- 239000010937 tungsten Substances 0.000 description 15
- 229910052786 argon Inorganic materials 0.000 description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000005498 polishing Methods 0.000 description 12
- 239000012528 membrane Substances 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000010948 rhodium Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 125000004430 oxygen atom Chemical group O* 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 229910052703 rhodium Inorganic materials 0.000 description 7
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 6
- 239000003963 antioxidant agent Substances 0.000 description 6
- 230000003078 antioxidant effect Effects 0.000 description 6
- 239000012300 argon atmosphere Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 5
- 239000011575 calcium Substances 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000011835 investigation Methods 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- 229910052761 rare earth metal Inorganic materials 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 239000003870 refractory metal Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- 230000003064 anti-oxidating effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 208000005156 Dehydration Diseases 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical compound [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910003446 platinum oxide Inorganic materials 0.000 description 2
- 230000009103 reabsorption Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- YJZATOSJMRIRIW-UHFFFAOYSA-N [Ir]=O Chemical group [Ir]=O YJZATOSJMRIRIW-UHFFFAOYSA-N 0.000 description 1
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3148—Silicon Carbide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3146—Carbon layers, e.g. diamond-like layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Semiconductor Memories (AREA)
Description
前記第2導電性酸化金属膜の上に、金属元素よりなる導電性向上膜を形成する工程と、前記導電性向上膜の上に、イリジウム以外の白金族元素であって、前記導電性向上膜を構成する前記金属元素とは異なる金属元素よりなる導電性カバー膜を形成する工程と、前記導電性カバー膜の上にハードマスクを形成する工程と、前記ハードマスクをエッチングマスクとして用いながら、該ハードマスクから露出する領域の前記導電性カバー膜、導電性向上膜、前記第1導電性酸化金属膜、前記第2導電性酸化金属膜、前記強誘電体膜、及び前記第1導電膜をエッチングして、前記第1導電性酸化金属膜と前記第2導電性酸化金属膜よりなる上部電極、前記強誘電体膜よりなるキャパシタ誘電体膜、及び前記第1導電膜よりなる下部電極を備えたキャパシタを形成する工程と、前記ハードマスクがエッチングされるエッチング条件を用い、該ハードマスクと、前記下部電極から露出する領域の前記結晶性導電膜とをエッチングする工程と、前記ハードマスクと前記結晶性導電膜とをエッチングする工程の後に、前記キャパシタの側面を、前記導電性カバー膜の材料を溶解するエッチング液に曝す工程と、前記側面を前記エッチング液に曝した後、前記キャパシタを覆う第2層間絶縁膜を形成する工程と、前記上部電極の上の前記導電性カバー膜と前記第2層間絶縁膜に、前記導電性向上膜に至る深さの第1ホールを形成する工程と、前記第1ホール内に、グルー膜とプラグ用導電膜とを順に形成してなる第1導電性プラグを形成する工程とを有し、前記第1導電性酸化金属膜を構成する第1の金属酸化物と前記第2導電性酸化金属膜を構成する第2の金属酸化物のそれぞれの化学量論的な組成をAO x1 、BO y1 (AとBは金属元素)、前記第1の金属酸化物と前記第2の金属酸化物の実際の組成をAO x2 、BO y2 とすると、関係y2/y1>x2/x1が成り立つ半導体装置の製造方法が提供される。
本発明の実施の形態に先立ち、本願発明者が行った調査について説明する。
図3〜図12は、本実施形態に係る半導体装置の製造途中の断面図である。
図14〜図19は、本発明の第2実施形態に係る半導体装置の製造途中の断面図である。なお、これらの図において第1実施形態で説明した要素には第1実施形態と同じ符号を付し、以下ではその説明を省略する。
図20は、本実施形態に係る半導体装置の断面図である。
図21〜図27は、本実施形態に係る半導体装置の製造途中の断面図である。なお、これらの図において、第1実施形態で説明した要素には第1実施形態と同じ符号を付し、以下ではその説明を省略する。
前記第1層間絶縁膜の上に形成された下部電極と、
前記下部電極の上に形成された強誘電体材料よりなるキャパシタ誘電体膜と、
前記キャパシタ誘電体膜の上に順に形成された第1導電性酸化金属膜及び第2導電性酸化金属膜を備え、前記キャパシタ誘電体膜及び前記下部電極と共にキャパシタを構成する上部電極と、
前記上部電極の上に形成され、イリジウム以外の白金族元素よりなる導電性カバー膜とを有し、
前記第1導電性酸化金属膜を構成する第1の金属酸化物と前記第2導電性酸化金属膜を構成する第2の金属酸化物のそれぞれの化学量論的な組成をAOx1、BOy1(AとBは金属元素)、前記第1の金属酸化物と前記第2の金属酸化物の実際の組成をAOx2、BOy2とすると、関係y2/y1>x2/x1が成り立つことを特徴とする半導体装置。
前記上部電極の上の前記導電性カバー膜と前記第2層間絶縁膜に、前記導電性向上膜に至る深さの第1ホールが形成され、
前記第1ホール内に、グルー膜とプラグ用導電膜とを順に形成してなる第1導電性プラグが形成されたことを特徴とする付記2に記載の半導体装置。
前記結晶性導電膜の上に前記下部電極が形成されたことを特徴とする付記1に記載の半導体装置。
前記不純物拡散領域の上の前記第1層間絶縁膜に第2ホールが形成され、
前記第2ホール内に前記不純物拡散領域と電気的に接続された第2導電性プラグが形成されて、
前記第2導電性プラグの上方に、該第2導電性プラグと電気的に接続されるように前記下部電極が形成されたことを特徴とする付記1に記載の半導体装置。
前記第1層間絶縁膜の上に結晶性導電膜を形成する工程と、
前記結晶性導電膜の上に第1導電膜を形成する工程と、
前記第1導電膜の上に強誘電体膜を形成する工程と、
前記強誘電体膜の上に第2導電膜を形成する工程と、
前記第2導電膜の上に、イリジウム以外の白金族元素よりなる導電性カバー膜を形成する工程と、
前記導電性カバー膜の上にハードマスクを形成する工程と、
前記ハードマスクをエッチングマスクとして用いながら、該ハードマスクから露出する領域の前記導電性カバー膜、前記第2導電膜、前記強誘電体膜、及び前記第1導電膜をエッチングして、前記第2導電膜よりなる上部電極、前記強誘電体膜よりなるキャパシタ誘電体膜、及び前記第1導電膜よりなる下部電極を備えたキャパシタを形成する工程と、
前記ハードマスクがエッチングされるエッチング条件を用い、該ハードマスクと、前記下部電極から露出する領域の前記結晶性導電膜とをエッチングする工程と、
を有することを特徴とする半導体装置の製造方法。
前記第1導電性酸化金属膜を構成する第1の金属酸化物と前記第2導電性酸化金属膜を構成する第2の金属酸化物のそれぞれの化学量論的な組成をAOx1、BOy1(AとBは金属元素)、前記第1の金属酸化物と前記第2の金属酸化物の実際の組成をAOx2、BOy2とすると、関係y2/y1>x2/x1が成り立つことを特徴とする付記11に記載の半導体装置の製造方法。
前記第2導電性酸化金属膜を形成する工程は、酸素と不活性ガスとをスパッタガスとし、且つ前記スパッタガスに占める酸素の流量比が、前記第1導電性酸化金属膜を形成する工程におけるよりも多い反応性スパッタ法により行われることを特徴とする付記14に記載の半導体装置の製造方法。
前記導電性向上膜の上に前記導電性カバー膜を形成することを特徴とする付記14に記載の半導体装置の製造方法。
前記上部電極の上の前記導電性カバー膜と前記第2層間絶縁膜に、前記導電性向上膜に至る深さのホールを形成する工程と、
前記ホール内に、グルー膜とプラグ用導電膜とを順に形成してなる導電性プラグを形成する工程とを更に有することを特徴とする付記17に記載の半導体装置の製造方法。
Claims (6)
- 半導体基板の上方に形成された第1層間絶縁膜と、
前記第1層間絶縁膜の上に形成された結晶性導電膜と、
前記結晶性導電膜の上に形成された下部電極と、
前記下部電極の上に形成された強誘電体材料よりなるキャパシタ誘電体膜と、
前記キャパシタ誘電体膜の上に順に形成された第1導電性酸化金属膜及び第2導電性酸化金属膜を備え、前記キャパシタ誘電体膜及び前記下部電極と共にキャパシタを構成する上部電極と、
前記第2導電性酸化金属膜の上に形成され、金属元素よりなる導電性向上膜と、
前記導電性向上膜の上に形成され、イリジウム以外の白金族元素であって前記導電性向上膜を構成する前記金属元素とは異なる金属元素よりなる導電性カバー膜と、
前記キャパシタを覆う第2層間絶縁膜とを有し、
前記第1導電性酸化金属膜を構成する第1の金属酸化物と前記第2導電性酸化金属膜を構成する第2の金属酸化物のそれぞれの化学量論的な組成をAOx1、BOy1(AとBは金属元素)、前記第1の金属酸化物と前記第2の金属酸化物の実際の組成をAOx2、BOy2とすると、関係y2/y1>x2/x1が成り立ち、
前記上部電極の上の前記導電性カバー膜と前記第2層間絶縁膜に、前記導電性向上膜に至る深さの第1ホールが形成され、
前記第1ホール内に、グルー膜とプラグ用導電膜とを順に形成してなる第1導電性プラグが形成されたことを特徴とする半導体装置。 - 半導体基板の上方に第1層間絶縁膜を形成する工程と、
前記第1層間絶縁膜の上に結晶性導電膜を形成する工程と、
前記結晶性導電膜の上に第1導電膜を形成する工程と、
前記第1導電膜の上に強誘電体膜を形成する工程と、
前記強誘電体膜の上に第1導電性酸化金属膜を形成する工程と、
前記第1導電性酸化金属膜の上に第2導電性酸化金属膜を形成する工程と、
前記第2導電性酸化金属膜の上に、金属元素よりなる導電性向上膜を形成する工程と、
前記導電性向上膜の上に、イリジウム以外の白金族元素であって、前記導電性向上膜を構成する前記金属元素とは異なる金属元素よりなる導電性カバー膜を形成する工程と、
前記導電性カバー膜の上にハードマスクを形成する工程と、
前記ハードマスクをエッチングマスクとして用いながら、該ハードマスクから露出する領域の前記導電性カバー膜、導電性向上膜、前記第1導電性酸化金属膜、前記第2導電性酸化金属膜、前記強誘電体膜、及び前記第1導電膜をエッチングして、前記第1導電性酸化金属膜と前記第2導電性酸化金属膜よりなる上部電極、前記強誘電体膜よりなるキャパシタ誘電体膜、及び前記第1導電膜よりなる下部電極を備えたキャパシタを形成する工程と、
前記ハードマスクがエッチングされるエッチング条件を用い、該ハードマスクと、前記下部電極から露出する領域の前記結晶性導電膜とをエッチングする工程と、
前記ハードマスクと前記結晶性導電膜とをエッチングする工程の後に、前記キャパシタの側面を、前記導電性カバー膜の材料を溶解するエッチング液に曝す工程と、
前記側面を前記エッチング液に曝した後、前記キャパシタを覆う第2層間絶縁膜を形成する工程と、
前記上部電極の上の前記導電性カバー膜と前記第2層間絶縁膜に、前記導電性向上膜に至る深さの第1ホールを形成する工程と、
前記第1ホール内に、グルー膜とプラグ用導電膜とを順に形成してなる第1導電性プラグを形成する工程とを有し、
前記第1導電性酸化金属膜を構成する第1の金属酸化物と前記第2導電性酸化金属膜を構成する第2の金属酸化物のそれぞれの化学量論的な組成をAO x1 、BO y1 (AとBは金属元素)、前記第1の金属酸化物と前記第2の金属酸化物の実際の組成をAO x2 、BO y2 とすると、関係y2/y1>x2/x1が成り立つことを特徴とする半導体装置の製造方法。 - 前記第1導電性酸化金属膜を形成する工程は、酸素と不活性ガスとをスパッタガスとする反応性スパッタ法により行われ、
前記第2導電性酸化金属膜を形成する工程は、酸素と不活性ガスとをスパッタガスとし、且つ前記スパッタガスに占める酸素の流量比が、前記第1導電性酸化金属膜を形成する工程におけるよりも多い反応性スパッタ法により行われることを特徴とする請求項2に記載の半導体装置の製造方法。 - 前記第2導電性酸化金属膜を形成する工程の前に、酸化性ガス含有雰囲気中において前記第1導電性酸化金属膜をアニールする工程を更に有することを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記第2導電性酸化金属膜の上面が露出している状態で、該第2導電性酸化金属膜をアニールする工程を更に有することを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記第2導電性酸化金属膜を形成する工程において、前記第1導電性酸化金属膜よりも厚く前記第2導電性酸化金属膜を形成することを特徴とする請求項2に記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006182300A JP4882548B2 (ja) | 2006-06-30 | 2006-06-30 | 半導体装置及びその製造方法 |
US11/554,354 US7592657B2 (en) | 2006-06-30 | 2006-10-30 | Semiconductor device and method of manufacturing the same |
US12/539,694 US8093071B2 (en) | 2006-06-30 | 2009-08-12 | Semiconductor device and method of manufacturing the same |
US13/313,442 US8349679B2 (en) | 2006-06-30 | 2011-12-07 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006182300A JP4882548B2 (ja) | 2006-06-30 | 2006-06-30 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008010772A JP2008010772A (ja) | 2008-01-17 |
JP4882548B2 true JP4882548B2 (ja) | 2012-02-22 |
Family
ID=38875736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006182300A Expired - Fee Related JP4882548B2 (ja) | 2006-06-30 | 2006-06-30 | 半導体装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (3) | US7592657B2 (ja) |
JP (1) | JP4882548B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8124490B2 (en) * | 2006-12-21 | 2012-02-28 | Stats Chippac, Ltd. | Semiconductor device and method of forming passive devices |
JP5109395B2 (ja) * | 2007-02-14 | 2012-12-26 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP4320679B2 (ja) * | 2007-02-19 | 2009-08-26 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
CN101636836B (zh) * | 2007-03-20 | 2011-03-30 | 富士通半导体股份有限公司 | 半导体装置及其制造方法 |
JP2009283658A (ja) * | 2008-05-22 | 2009-12-03 | Elpida Memory Inc | キャパシタ素子用の絶縁膜、キャパシタ素子及び半導体装置 |
JP2012151292A (ja) | 2011-01-19 | 2012-08-09 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
US9349849B2 (en) | 2012-03-28 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the semiconductor device |
US9876018B2 (en) * | 2015-12-03 | 2018-01-23 | Micron Technology, Inc. | Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material |
KR102645021B1 (ko) * | 2019-03-06 | 2024-03-06 | 삼성전자주식회사 | 반도체 장치 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11195768A (ja) | 1997-10-22 | 1999-07-21 | Fujitsu Ltd | ペロブスカイト型酸化物膜を含む電子装置とその製造方法及び強誘電体キャパシタ |
JP2000091539A (ja) * | 1998-07-16 | 2000-03-31 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP3159257B2 (ja) | 1998-12-07 | 2001-04-23 | 日本電気株式会社 | 半導体装置の製造方法 |
US6600185B1 (en) * | 1999-03-10 | 2003-07-29 | Oki Electric Industry Co., Ltd. | Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof |
JP3676958B2 (ja) * | 1999-12-28 | 2005-07-27 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
JP3661850B2 (ja) * | 2001-04-25 | 2005-06-22 | 富士通株式会社 | 半導体装置およびその製造方法 |
JP2003152165A (ja) | 2001-11-15 | 2003-05-23 | Fujitsu Ltd | 半導体装置およびその製造方法 |
KR100450669B1 (ko) * | 2002-01-30 | 2004-10-01 | 삼성전자주식회사 | 산소 침투 경로 및 캡슐화 장벽막을 구비하는 강유전체메모리 소자 및 그 제조 방법 |
JP3994017B2 (ja) | 2002-02-28 | 2007-10-17 | 富士通株式会社 | 半導体装置の製造方法 |
JP2003257942A (ja) * | 2002-02-28 | 2003-09-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JP4014902B2 (ja) * | 2002-03-15 | 2007-11-28 | 富士通株式会社 | 半導体装置の製造方法 |
KR100473113B1 (ko) * | 2002-04-04 | 2005-03-08 | 삼성전자주식회사 | 반도체 장치의 커패시터 제조 방법 |
JP2004006593A (ja) * | 2002-04-22 | 2004-01-08 | Fujitsu Ltd | 強誘電体キャパシタ及び強誘電体キャパシタの形成方法 |
US6847073B2 (en) * | 2002-11-07 | 2005-01-25 | Kabushiki Kaisha Toshiba | Semiconductor device using ferroelectric film in cell capacitor, and method for fabricating the same |
JP2005093605A (ja) * | 2003-09-16 | 2005-04-07 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2005183841A (ja) * | 2003-12-22 | 2005-07-07 | Fujitsu Ltd | 半導体装置の製造方法 |
US7220600B2 (en) | 2004-12-17 | 2007-05-22 | Texas Instruments Incorporated | Ferroelectric capacitor stack etch cleaning methods |
-
2006
- 2006-06-30 JP JP2006182300A patent/JP4882548B2/ja not_active Expired - Fee Related
- 2006-10-30 US US11/554,354 patent/US7592657B2/en active Active
-
2009
- 2009-08-12 US US12/539,694 patent/US8093071B2/en not_active Expired - Fee Related
-
2011
- 2011-12-07 US US13/313,442 patent/US8349679B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20090298204A1 (en) | 2009-12-03 |
US8093071B2 (en) | 2012-01-10 |
US20080001254A1 (en) | 2008-01-03 |
US7592657B2 (en) | 2009-09-22 |
JP2008010772A (ja) | 2008-01-17 |
US20120077288A1 (en) | 2012-03-29 |
US8349679B2 (en) | 2013-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4952148B2 (ja) | 半導体装置及びその製造方法 | |
US9991270B2 (en) | Semiconductor device and manufacturing method for same | |
JP5109341B2 (ja) | 半導体装置とその製造方法 | |
JP5205741B2 (ja) | 半導体装置の製造方法 | |
JP5251864B2 (ja) | 半導体装置及びその製造方法 | |
JP4882548B2 (ja) | 半導体装置及びその製造方法 | |
KR100774898B1 (ko) | 반도체 장치의 제조 방법 | |
JP4946214B2 (ja) | 半導体装置の製造方法 | |
JP2008124330A (ja) | 半導体装置の製造方法 | |
JP5412754B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP5007723B2 (ja) | キャパシタを含む半導体装置及びその製造方法 | |
JP5304810B2 (ja) | 半導体装置の製造方法 | |
JP5272432B2 (ja) | 半導体装置の製造方法 | |
JP2007266023A (ja) | 半導体装置、及び半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20080731 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090302 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110802 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111003 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111108 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111121 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141216 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4882548 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |