KR20090108217A - 금속 산화물 전극을 구비하는 저항 변화 메모리 소자 및이의 동작방법 - Google Patents
금속 산화물 전극을 구비하는 저항 변화 메모리 소자 및이의 동작방법 Download PDFInfo
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- KR20090108217A KR20090108217A KR1020080033522A KR20080033522A KR20090108217A KR 20090108217 A KR20090108217 A KR 20090108217A KR 1020080033522 A KR1020080033522 A KR 1020080033522A KR 20080033522 A KR20080033522 A KR 20080033522A KR 20090108217 A KR20090108217 A KR 20090108217A
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- Prior art keywords
- electrode
- film
- metal oxide
- resistance change
- oxide
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 51
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 36
- 239000001301 oxygen Substances 0.000 claims abstract description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910002367 SrTiO Inorganic materials 0.000 claims description 12
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 7
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 7
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 6
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 6
- 239000010408 film Substances 0.000 description 86
- 238000002360 preparation method Methods 0.000 description 15
- -1 oxygen ions Chemical class 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (9)
- 제1 전극;상기 제1 전극을 마주보며 금속 산화물 전극막을 구비하는 제2 전극; 및상기 제1 전극과 상기 금속 산화물 전극막 사이에 위치하는 산화물 저항 변화막을 포함하는 저항 변화 메모리 소자.
- 제1항에 있어서,상기 산화물 저항 변화막의 산소의 원자비는 화학양론적인 산소의 원자비와 같거나 이보다 작은 저항 변화 메모리 소자.
- 제1항에 있어서,상기 산화물 저항 변화막은 페로브스카이트막인 저항 변화 메모리 소자.
- 제3항에 있어서,상기 페로브스카이트막은 SrTiO3-X, Nb가 도핑된 SrTiO3-X, Cr이 도핑된 SrTiO3-X, BaTiO3-X, LaMnO3-X, SrMnO3-X, PrTiO3-X, 또는 PbZrO3-X을 함유하며, x는 0 내지 1인 저항 변화 메모리 소자.
- 제3항에 있어서,상기 페로브스카이트막은 Pr3-YCaYMnO3-X 또는 La3-YCaYMnO3-X을 함유하며, x는 0 내지 1이고, y는 0.1 내지 1.5인 저항 변화 메모리 소자.
- 제1항에 있어서,상기 금속 산화물 전극은 루테늄 산화막(ruthenium oxide) 또는 이리듐 산화막(Iridium oxide)인 저항 변화 메모리 소자.
- 제1항에 있어서,상기 금속 산화물 전극은 비정질막(amorphous layer)인 저항 변화 메모리 소자.
- 제1항에 있어서,상기 제2 전극에 접속하는 신호선을 더 포함하는 저항 변화 메모리 소자.
- 제1 전극, 상기 제1 전극을 마주보며 금속 산화물 전극막을 구비하는 제2 전극, 및 상기 제1 전극과 상기 금속 산화물 전극막 사이에 위치하는 산화물 저항 변화막을 포함하는 메모리 소자를 제공하는 단계;상기 금속 산화물 전극막에 양의 전압을 인가하여 상기 메모리 소자를 저저 항 상태로 프로그래밍하는 단계; 및상기 금속 산화물 전극막에 음의 전압을 인가하여 상기 메모리 소자는 고저항 상태로 프로그래밍하는 단계를 포함하는 저항 변화 메모리 소자의 동작 방법.
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KR1020080033522A KR101007085B1 (ko) | 2008-04-11 | 2008-04-11 | 금속 산화물 전극을 구비하는 저항 변화 메모리 소자 및이의 동작방법 |
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KR1020080033522A KR101007085B1 (ko) | 2008-04-11 | 2008-04-11 | 금속 산화물 전극을 구비하는 저항 변화 메모리 소자 및이의 동작방법 |
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KR20090108217A true KR20090108217A (ko) | 2009-10-15 |
KR101007085B1 KR101007085B1 (ko) | 2011-01-10 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101537396B1 (ko) * | 2014-09-18 | 2015-07-16 | 한국외국어대학교 연구산학협력단 | 브라운밀레라이트 구조의 물질을 이용한 저항 스위칭 기억 소자 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US7029924B2 (en) | 2003-09-05 | 2006-04-18 | Sharp Laboratories Of America, Inc. | Buffered-layer memory cell |
KR100913395B1 (ko) * | 2006-12-04 | 2009-08-21 | 한국전자통신연구원 | 메모리 소자 및 그 제조방법 |
WO2008075414A1 (ja) | 2006-12-19 | 2008-06-26 | Fujitsu Limited | 抵抗変化素子の製造方法 |
KR20080112878A (ko) * | 2007-06-22 | 2008-12-26 | 삼성전자주식회사 | 저항성 메모리 소자 및 그 제조 방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR101537396B1 (ko) * | 2014-09-18 | 2015-07-16 | 한국외국어대학교 연구산학협력단 | 브라운밀레라이트 구조의 물질을 이용한 저항 스위칭 기억 소자 |
WO2016043437A1 (ko) * | 2014-09-18 | 2016-03-24 | 한국외국어대학교 연구산학협력단 | 브라운밀레라이트 구조의 물질을 이용한 저항 스위칭 기억 소자 |
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