JP2019537274A5 - - Google Patents
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- JP2019537274A5 JP2019537274A5 JP2019530787A JP2019530787A JP2019537274A5 JP 2019537274 A5 JP2019537274 A5 JP 2019537274A5 JP 2019530787 A JP2019530787 A JP 2019530787A JP 2019530787 A JP2019530787 A JP 2019530787A JP 2019537274 A5 JP2019537274 A5 JP 2019537274A5
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- Prior art keywords
- semiconductor device
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- region
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- 239000004065 semiconductor Substances 0.000 claims 30
- 239000002019 doping agent Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/372,505 | 2016-12-08 | ||
| US15/372,505 US10861931B2 (en) | 2016-12-08 | 2016-12-08 | Power semiconductor devices having gate trenches and buried edge terminations and related methods |
| PCT/US2017/054224 WO2018106326A1 (en) | 2016-12-08 | 2017-09-29 | Power semiconductor devices having gate trenches and buried termination structures and related methods |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020214806A Division JP7182594B2 (ja) | 2016-12-08 | 2020-12-24 | ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019537274A JP2019537274A (ja) | 2019-12-19 |
| JP2019537274A5 true JP2019537274A5 (https=) | 2020-02-06 |
| JP6817443B2 JP6817443B2 (ja) | 2021-01-20 |
Family
ID=60043395
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019530787A Active JP6817443B2 (ja) | 2016-12-08 | 2017-09-29 | ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法 |
| JP2020214806A Active JP7182594B2 (ja) | 2016-12-08 | 2020-12-24 | ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020214806A Active JP7182594B2 (ja) | 2016-12-08 | 2020-12-24 | ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10861931B2 (https=) |
| EP (1) | EP3552239A1 (https=) |
| JP (2) | JP6817443B2 (https=) |
| KR (1) | KR102204272B1 (https=) |
| CN (1) | CN110036486B (https=) |
| WO (1) | WO2018106326A1 (https=) |
Families Citing this family (35)
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| US10355132B2 (en) | 2017-03-20 | 2019-07-16 | North Carolina State University | Power MOSFETs with superior high frequency figure-of-merit |
| JP7006280B2 (ja) * | 2018-01-09 | 2022-01-24 | 富士電機株式会社 | 半導体装置 |
| US10777670B2 (en) * | 2018-06-25 | 2020-09-15 | Pakal Technologies, Inc. | Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base formed using epitaxial layer |
| DE102018124740B4 (de) * | 2018-10-08 | 2025-08-28 | Infineon Technologies Ag | Verfahren zur herstellung eines halbleiterbauelements |
| KR102692122B1 (ko) * | 2019-07-16 | 2024-08-05 | 현대자동차 주식회사 | 반도체 소자 및 그 제조 방법 |
| US11031461B2 (en) * | 2019-08-25 | 2021-06-08 | Genesic Semiconductor Inc. | Manufacture of robust, high-performance devices |
| US20240014255A1 (en) * | 2020-01-03 | 2024-01-11 | Lg Electronics Inc. | Metal-oxide-semiconductor field-effect transistor device, and manufacturing method therefor |
| US11961903B2 (en) * | 2020-05-26 | 2024-04-16 | Hyundai Mobis Co., Ltd. | Power semiconductor device and method of fabricating the same |
| EP3916761A1 (en) * | 2020-05-27 | 2021-12-01 | Infineon Technologies Austria AG | Method for producing a superjunction device |
| KR102531554B1 (ko) * | 2020-07-01 | 2023-05-11 | 서강대학교산학협력단 | 실리콘카바이드 트랜지스터 및 이의 제조방법 |
| EP3975266A1 (en) * | 2020-09-28 | 2022-03-30 | Nexperia B.V. | Semiconductor device with improved junction termination extension region |
| FR3115631B1 (fr) * | 2020-10-23 | 2022-11-04 | St Microelectronics Crolles 2 Sas | Composant semiconducteur de circuit intégré |
| WO2022128818A1 (de) * | 2020-12-18 | 2022-06-23 | mi2-factory GmbH | Elektronisches halbleiterbauelement und verfahren zur herstellung eines vorbehandelten verbundsubstrats für ein elektronisches halbleiterbauelement |
| US11817478B2 (en) * | 2020-12-23 | 2023-11-14 | Semiconductor Components Industries, Llc | Termination structures with reduced dynamic output capacitance loss |
| JP7647239B2 (ja) * | 2021-03-30 | 2025-03-18 | 富士電機株式会社 | 半導体装置 |
| JP7697255B2 (ja) | 2021-04-27 | 2025-06-24 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| US11894455B2 (en) * | 2021-09-22 | 2024-02-06 | Wolfspeed, Inc. | Vertical power devices fabricated using implanted methods |
| CN116072697B (zh) * | 2021-10-29 | 2025-12-16 | 华为数字能源技术有限公司 | 一种半导体器件及集成电路 |
| EP4181212A1 (en) * | 2021-11-11 | 2023-05-17 | Infineon Technologies Dresden GmbH & Co . KG | Semiconductor device |
| US11955567B2 (en) * | 2022-02-16 | 2024-04-09 | Leap Semiconductor Corp. | Wide-band gap semiconductor device and method of manufacturing the same |
| US12376319B2 (en) | 2022-03-24 | 2025-07-29 | Wolfspeed, Inc. | Support shield structures for trenched semiconductor devices |
| CN117242577A (zh) * | 2022-04-14 | 2023-12-15 | 苏州龙驰半导体科技有限公司 | 晶体管器件和制造晶体管器件的方法 |
| US12408360B2 (en) | 2022-05-13 | 2025-09-02 | Wolfspeed, Inc. | Vertical power devices having mesas and etched trenches therebetween |
| CN114725090B (zh) * | 2022-05-24 | 2022-09-02 | 深圳芯能半导体技术有限公司 | 一种绝缘栅双极型晶体管及其制备方法 |
| JP2023173420A (ja) | 2022-05-26 | 2023-12-07 | 富士電機株式会社 | 炭化珪素半導体装置 |
| US12176342B2 (en) * | 2022-06-02 | 2024-12-24 | Nanya Technology Corporation | Method for fabricating semiconductor device with guard ring |
| US12154895B2 (en) * | 2022-06-02 | 2024-11-26 | Nanya Technology Corporation | Semiconductor device with guard ring |
| US20240047569A1 (en) * | 2022-08-08 | 2024-02-08 | Leap Semiconductor Corp. | Silicon carbide semiconductor power transistor and method of manufacturing the same |
| CN115832058B (zh) * | 2022-12-15 | 2025-08-22 | 恒泰柯半导体（上海）有限公司 | 一种沟槽型碳化硅mosfet器件 |
| DE112023005703T5 (de) * | 2023-01-31 | 2025-11-20 | Hitachi Energy Ltd | Leistungshalbleitervorrichtung und verfahren zur herstellung einer leistungshalbleitervorrichtung |
| TWI904600B (zh) * | 2024-03-13 | 2025-11-11 | 鴻海精密工業股份有限公司 | 電晶體裝置 |
| CN118231229A (zh) * | 2024-04-02 | 2024-06-21 | 上海毅笃功率半导体科技有限公司 | 能够独立控制掺杂浓度的半导体器件的有源区和端接区的制作方法以及半导体器件的制作方法 |
| CN119562575B (zh) * | 2024-11-20 | 2025-09-23 | 深圳尚阳通科技股份有限公司 | Sgt器件的终端结构 |
| KR102922762B1 (ko) * | 2025-08-01 | 2026-02-05 | 주식회사 아이큐랩 | 탄화 규소 반도체 디바이스 및 그의 제조 방법 |
| CN120640743B (zh) * | 2025-08-13 | 2025-11-14 | 杭州谱析光晶半导体科技有限公司 | 一种低导通电阻的SiC MOSFET终端结构及其制备工艺 |
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| US7221010B2 (en) | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
| US7638841B2 (en) * | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US7405452B2 (en) * | 2004-02-02 | 2008-07-29 | Hamza Yilmaz | Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
| JP2006005275A (ja) * | 2004-06-21 | 2006-01-05 | Toshiba Corp | 電力用半導体素子 |
| JP2008103529A (ja) | 2006-10-19 | 2008-05-01 | Toyota Central R&D Labs Inc | 半導体装置 |
| JP4356764B2 (ja) * | 2007-04-18 | 2009-11-04 | 株式会社デンソー | 炭化珪素半導体装置 |
| JP2009033036A (ja) | 2007-07-30 | 2009-02-12 | Hitachi Ltd | 半導体装置及びこれを用いた電気回路装置 |
| US7989882B2 (en) | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
| US8164139B2 (en) * | 2008-04-29 | 2012-04-24 | Force Mos Technology Co., Ltd. | MOSFET structure with guard ring |
| US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
| JP5409247B2 (ja) * | 2009-10-13 | 2014-02-05 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2011091086A (ja) | 2009-10-20 | 2011-05-06 | Mitsubishi Electric Corp | 半導体装置 |
| US8415671B2 (en) * | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
| JP2013038329A (ja) * | 2011-08-10 | 2013-02-21 | Toshiba Corp | 半導体装置 |
| JP5482745B2 (ja) * | 2011-08-10 | 2014-05-07 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
| US8785278B2 (en) * | 2012-02-02 | 2014-07-22 | Alpha And Omega Semiconductor Incorporated | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact |
| JP2013219161A (ja) | 2012-04-09 | 2013-10-24 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
| JP5812029B2 (ja) * | 2012-06-13 | 2015-11-11 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP5751213B2 (ja) | 2012-06-14 | 2015-07-22 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| CN104737296B (zh) * | 2012-10-18 | 2018-01-05 | 三菱电机株式会社 | 碳化硅半导体装置及其制造方法 |
| US9496331B2 (en) * | 2012-12-07 | 2016-11-15 | Denso Corporation | Semiconductor device having vertical MOSFET with super junction structure, and method for manufacturing the same |
| JP5983415B2 (ja) | 2013-01-15 | 2016-08-31 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP6064614B2 (ja) | 2013-01-21 | 2017-01-25 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP2014175518A (ja) | 2013-03-11 | 2014-09-22 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
| US9142668B2 (en) | 2013-03-13 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with buried well protection regions |
| US9306061B2 (en) | 2013-03-13 | 2016-04-05 | Cree, Inc. | Field effect transistor devices with protective regions |
| US9012984B2 (en) * | 2013-03-13 | 2015-04-21 | Cree, Inc. | Field effect transistor devices with regrown p-layers |
| US8860098B2 (en) * | 2013-03-15 | 2014-10-14 | United Silicon Carbide, Inc. | Vjfet devices |
| JP2014241368A (ja) | 2013-06-12 | 2014-12-25 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| US10868169B2 (en) * | 2013-09-20 | 2020-12-15 | Cree, Inc. | Monolithically integrated vertical power transistor and bypass diode |
| JPWO2015049815A1 (ja) * | 2013-10-04 | 2017-03-09 | 三菱電機株式会社 | 炭化珪素半導体装置 |
| KR101539880B1 (ko) * | 2014-01-02 | 2015-07-27 | 삼성전기주식회사 | 전력 반도체 소자 |
| JP6291988B2 (ja) | 2014-04-15 | 2018-03-14 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP6485034B2 (ja) * | 2014-06-16 | 2019-03-20 | 富士電機株式会社 | 半導体装置の製造方法 |
| WO2016063683A1 (ja) * | 2014-10-24 | 2016-04-28 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6354525B2 (ja) | 2014-11-06 | 2018-07-11 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP6479615B2 (ja) * | 2015-09-14 | 2019-03-06 | 株式会社東芝 | 半導体装置の製造方法 |
| JP6693131B2 (ja) * | 2016-01-12 | 2020-05-13 | 富士電機株式会社 | 半導体装置 |
| CN105977310B (zh) * | 2016-07-27 | 2019-06-04 | 电子科技大学 | 碳化硅功率器件终端结构及其制造方法 |
-
2016
- 2016-12-08 US US15/372,505 patent/US10861931B2/en active Active
-
2017
- 2017-09-29 CN CN201780074972.7A patent/CN110036486B/zh active Active
- 2017-09-29 JP JP2019530787A patent/JP6817443B2/ja active Active
- 2017-09-29 KR KR1020197015584A patent/KR102204272B1/ko active Active
- 2017-09-29 WO PCT/US2017/054224 patent/WO2018106326A1/en not_active Ceased
- 2017-09-29 EP EP17781346.6A patent/EP3552239A1/en active Pending
-
2020
- 2020-11-19 US US16/952,757 patent/US11837629B2/en active Active
- 2020-12-24 JP JP2020214806A patent/JP7182594B2/ja active Active
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