|
US9865772B2
(en)
|
2015-01-06 |
2018-01-09 |
Apple Inc. |
LED structures for reduced non-radiative sidewall recombination
|
|
US10297581B2
(en)
|
2015-07-07 |
2019-05-21 |
Apple Inc. |
Quantum dot integration schemes
|
|
US10297719B2
(en)
|
2015-08-27 |
2019-05-21 |
Mikro Mesa Technology Co., Ltd. |
Micro-light emitting diode (micro-LED) device
|
|
KR102402999B1
(ko)
*
|
2015-08-31 |
2022-05-30 |
삼성디스플레이 주식회사 |
디스플레이 장치 및 이의 제조 방법
|
|
DE102015120089A1
(de)
*
|
2015-11-19 |
2017-05-24 |
Osram Opto Semiconductors Gmbh |
Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
|
|
KR102651054B1
(ko)
*
|
2016-02-22 |
2024-03-26 |
삼성디스플레이 주식회사 |
전사 장치, 이를 이용한 전사 방법 및 표시 장치
|
|
US10132478B2
(en)
|
2016-03-06 |
2018-11-20 |
Svv Technology Innovations, Inc. |
Flexible solid-state illumination devices
|
|
DE102016105407A1
(de)
*
|
2016-03-23 |
2017-09-28 |
Osram Opto Semiconductors Gmbh |
Verfahren zur Herstellung einer elektronischen Vorrichtung und elektronische Vorrichtung
|
|
CN109155345B
(zh)
*
|
2016-06-30 |
2022-10-28 |
苹果公司 |
用于减少的非辐射侧壁复合的led结构
|
|
US10396241B1
(en)
*
|
2016-08-04 |
2019-08-27 |
Apple Inc. |
Diffusion revealed blocking junction
|
|
CN106340597B
(zh)
*
|
2016-08-31 |
2019-01-18 |
纳晶科技股份有限公司 |
发光器件
|
|
TWI648870B
(zh)
*
|
2016-12-09 |
2019-01-21 |
英屬開曼群島商錼創科技股份有限公司 |
發光二極體晶片
|
|
US12015103B2
(en)
*
|
2017-01-10 |
2024-06-18 |
PlayNitride Display Co., Ltd. |
Micro light emitting diode display panel with option of choosing to emit light both or respectively of light-emitting regions
|
|
TWI646680B
(zh)
*
|
2017-01-10 |
2019-01-01 |
英屬開曼群島商錼創科技股份有限公司 |
微型發光二極體晶片以及顯示面板
|
|
CN109216417B
(zh)
*
|
2017-06-30 |
2023-10-17 |
乐金显示有限公司 |
显示装置
|
|
CN109860364B
(zh)
*
|
2017-08-30 |
2020-09-01 |
天津三安光电有限公司 |
发光二极管
|
|
KR102498252B1
(ko)
|
2017-09-26 |
2023-02-10 |
삼성전자주식회사 |
발광 칩들을 포함하는 디스플레이 및 그 제조 방법
|
|
US10325889B1
(en)
|
2018-01-12 |
2019-06-18 |
Mikro Mesa Technology Co., Ltd. |
Display device including LED devices with selective activation function
|
|
CN111615749B
(zh)
|
2018-01-24 |
2024-11-19 |
苹果公司 |
发光结构
|
|
US20190305188A1
(en)
*
|
2018-03-30 |
2019-10-03 |
Facebook Technologies, Llc |
Reduction of surface recombination losses in micro-leds
|
|
US10622519B2
(en)
|
2018-03-30 |
2020-04-14 |
Facebook Technologies, Llc |
Reduction of surface recombination losses in micro-LEDs
|
|
US10468552B2
(en)
|
2018-03-30 |
2019-11-05 |
Facebook Technologies, Llc |
High-efficiency micro-LEDs
|
|
US10644196B2
(en)
|
2018-03-30 |
2020-05-05 |
Facebook Technologies, Llc |
Reduction of surface recombination losses in micro-LEDs
|
|
TWI672466B
(zh)
*
|
2018-04-11 |
2019-09-21 |
台灣愛司帝科技股份有限公司 |
微型發光二極體顯示器及其製作方法
|
|
KR102579057B1
(ko)
*
|
2018-06-11 |
2023-09-14 |
샤먼 산안 옵토일렉트로닉스 컴퍼니 리미티드 |
발광 어셈블리
|
|
DE202019103446U1
(de)
*
|
2018-06-19 |
2019-11-29 |
Soraa, Inc. |
Lichtemittierende Gruppe-III-Nitrid-Diode mit hohem Wirkungsgrad
|
|
CN108598867B
(zh)
*
|
2018-06-26 |
2020-06-12 |
扬州乾照光电有限公司 |
Dbr结构芯片及其制备方法
|
|
KR102136579B1
(ko)
*
|
2018-07-27 |
2020-07-22 |
서울대학교산학협력단 |
표시 장치
|
|
CN111933771B
(zh)
*
|
2018-07-28 |
2023-02-17 |
厦门三安光电有限公司 |
微发光二极管及其显示装置
|
|
CN115775852A
(zh)
*
|
2018-08-10 |
2023-03-10 |
林宏诚 |
流体移转系统、发光二极管装置及制作方法、发光及显示设备
|
|
KR102608987B1
(ko)
*
|
2018-09-07 |
2023-12-05 |
삼성디스플레이 주식회사 |
발광 소자, 그의 제조 방법, 및 발광 소자를 구비한 표시 장치
|
|
US11139342B2
(en)
|
2018-09-26 |
2021-10-05 |
Nitride Semiconductors Co., Ltd. |
UV-LED and display
|
|
US10964845B2
(en)
|
2018-09-27 |
2021-03-30 |
Lumileds Llc |
Micro light emitting devices
|
|
TWI851085B
(zh)
*
|
2018-09-27 |
2024-08-01 |
美商亮銳公司 |
於圖案化模板及基板上之微米級發光二極體顯示器
|
|
US10811460B2
(en)
|
2018-09-27 |
2020-10-20 |
Lumileds Holding B.V. |
Micrometer scale light emitting diode displays on patterned templates and substrates
|
|
US11271033B2
(en)
|
2018-09-27 |
2022-03-08 |
Lumileds Llc |
Micro light emitting devices
|
|
US10923628B2
(en)
|
2018-09-27 |
2021-02-16 |
Lumileds Llc |
Micrometer scale light emitting diode displays on patterned templates and substrates
|
|
KR20240107341A
(ko)
*
|
2018-11-06 |
2024-07-09 |
더 리전츠 오브 더 유니버시티 오브 캘리포니아 |
초저 누설 전류를 갖는 마이크로-led
|
|
KR102601950B1
(ko)
*
|
2018-11-16 |
2023-11-14 |
삼성전자주식회사 |
Led 소자, led 소자의 제조 방법 및 led 소자를 포함하는 디스플레이 장치
|
|
KR102701758B1
(ko)
|
2018-11-27 |
2024-09-04 |
삼성디스플레이 주식회사 |
발광 소자, 이의 제조 방법 및 발광 소자를 구비한 표시 장치
|
|
CN109755359A
(zh)
*
|
2019-01-15 |
2019-05-14 |
江西兆驰半导体有限公司 |
一种发光二极管芯片的制造方法
|
|
EP3696300A1
(de)
|
2019-02-18 |
2020-08-19 |
Aixatech GmbH |
Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen
|
|
US10680035B1
(en)
*
|
2019-03-12 |
2020-06-09 |
Mikro Mesa Technology Co., Ltd. |
Micro light-emitting diode display device and micro light-emitting diode driving circuit
|
|
KR102737506B1
(ko)
|
2019-03-18 |
2024-12-05 |
삼성전자주식회사 |
반도체 발광소자 및 그 제조 방법
|
|
US11677042B2
(en)
*
|
2019-03-29 |
2023-06-13 |
Meta Platforms Technologies, Llc |
Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
|
|
US11569091B2
(en)
*
|
2019-05-07 |
2023-01-31 |
Meta Platforms Technologies, Llc |
Hybrid-bonded and run-out compensated light emitting diodes
|
|
GB2584150B
(en)
*
|
2019-05-24 |
2021-05-19 |
Plessey Semiconductors Ltd |
LED precursor including a passivation layer
|
|
EP3745474A1
(en)
*
|
2019-05-28 |
2020-12-02 |
OSRAM Opto Semiconductors GmbH |
Optoelectronic device and method for manufacturing an optoe-lectronic device
|
|
FI128613B
(en)
*
|
2019-06-19 |
2020-08-31 |
Comptek Solutions Oy |
Optoelectronic device
|
|
DE102019117207A1
(de)
*
|
2019-06-26 |
2020-12-31 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Leuchtdiodenchip und verfahren zur herstellung eines leuchtdiodenchips
|
|
JP7323783B2
(ja)
|
2019-07-19 |
2023-08-09 |
日亜化学工業株式会社 |
発光装置の製造方法及び発光装置
|
|
JP7403201B2
(ja)
*
|
2019-07-19 |
2023-12-22 |
信一郎 高谷 |
化合物半導体ヘテロ接合バイポーラトランジスタ
|
|
TWI707466B
(zh)
*
|
2019-07-23 |
2020-10-11 |
國立中興大學 |
亮度均勻之被動式微發光二極體陣列裝置
|
|
CN110534473B
(zh)
*
|
2019-07-29 |
2022-04-05 |
中国科学院微电子研究所 |
化合物半导体与硅基互补金属氧化物半导体晶圆的异构集成方法及异构集成器件
|
|
DE102019121580A1
(de)
|
2019-08-09 |
2021-02-11 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Bauelement mit reduzierter absorption und verfahren zur herstellung eines bauelements
|
|
KR102892292B1
(ko)
|
2019-08-19 |
2025-11-26 |
삼성전자주식회사 |
디스플레이 장치
|
|
GB2586861B
(en)
*
|
2019-09-06 |
2022-01-19 |
Plessey Semiconductors Ltd |
Light Emitting Diode and method of forming a Light Emitting Diode
|
|
GB2586862B
(en)
*
|
2019-09-06 |
2021-12-15 |
Plessey Semiconductors Ltd |
LED precursor incorporating strain relaxing structure
|
|
US11798974B2
(en)
*
|
2019-09-27 |
2023-10-24 |
Seoul Viosys Co., Ltd. |
Light emitting device for display and display apparatus having the same
|
|
DE102019126506A1
(de)
|
2019-10-01 |
2021-04-01 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Verfahren zur herstellung von optoelektronischen halbleiterchips und optoelektronischer halbleiterchip
|
|
US11309464B2
(en)
|
2019-10-14 |
2022-04-19 |
Facebook Technologies, Llc |
Micro-LED design for chief ray walk-off compensation
|
|
US11588072B2
(en)
*
|
2019-11-06 |
2023-02-21 |
Epistar Corporation |
Semiconductor device and semiconductor component including ihe same
|
|
US11424289B2
(en)
|
2019-11-14 |
2022-08-23 |
Meta Platforms Technologies, Llc |
In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
|
|
GB2590450B
(en)
*
|
2019-12-18 |
2022-01-05 |
Plessey Semiconductors Ltd |
Light emitting diode precursor
|
|
FR3105568B1
(fr)
*
|
2019-12-19 |
2021-12-17 |
Commissariat Energie Atomique |
Procede pour fabriquer un substrat comprenant une couche d’ingan relaxee
|
|
KR102802247B1
(ko)
*
|
2020-01-22 |
2025-05-07 |
엘지전자 주식회사 |
반도체 발광소자를 이용한 디스플레이 장치
|
|
KR20220140890A
(ko)
*
|
2020-01-22 |
2022-10-18 |
포로 테크놀로지스 리미티드 |
반도체 구조체 및 제작 방법
|
|
KR102871497B1
(ko)
|
2020-01-22 |
2025-10-15 |
삼성전자주식회사 |
반도체 발광 다이오드 및 그 제조 방법
|
|
US11699775B2
(en)
|
2020-01-22 |
2023-07-11 |
Samsung Electronics Co.. Ltd. |
Semiconductor LED and method of manufacturing the same
|
|
KR102866518B1
(ko)
|
2020-02-03 |
2025-09-30 |
삼성전자주식회사 |
반도체 발광소자 및 디스플레이 장치
|
|
CN111341893B
(zh)
*
|
2020-03-03 |
2021-03-26 |
中国科学院半导体研究所 |
一种AlGaN基二极管及其制备方法
|
|
DE102020106113A1
(de)
*
|
2020-03-06 |
2021-09-09 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Strahlungsemittierender halbleiterkörper, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterkörpers
|
|
US11569415B2
(en)
*
|
2020-03-11 |
2023-01-31 |
Lumileds Llc |
Light emitting diode devices with defined hard mask opening
|
|
CN113451108B
(zh)
*
|
2020-03-24 |
2024-06-25 |
中国科学院苏州纳米技术与纳米仿生研究所 |
一种超柔性透明半导体薄膜及其制备方法
|
|
GB2593698B
(en)
|
2020-03-30 |
2022-12-07 |
Plessey Semiconductors Ltd |
Monolithic electronic device
|
|
KR102506449B1
(ko)
*
|
2020-04-23 |
2023-03-07 |
삼성전자주식회사 |
표시 장치
|
|
US11715813B2
(en)
*
|
2020-05-19 |
2023-08-01 |
Google Llc |
Quantum well-based LED structure enhanced with sidewall hole injection
|
|
KR20230002890A
(ko)
*
|
2020-05-19 |
2023-01-05 |
구글 엘엘씨 |
발광 소자를 위한 변형 관리층의 조합
|
|
US11362237B2
(en)
*
|
2020-06-02 |
2022-06-14 |
Facebook Technologies, Llc |
High-efficiency red micro-LED with localized current aperture
|
|
KR102870852B1
(ko)
|
2020-06-24 |
2025-10-13 |
삼성전자주식회사 |
반도체 발광 소자
|
|
US11764095B2
(en)
|
2020-07-10 |
2023-09-19 |
Samsung Electronics Co., Ltd. |
Wet alignment method for micro-semiconductor chip and display transfer structure
|
|
TW202221937A
(zh)
*
|
2020-08-04 |
2022-06-01 |
英商普羅科技有限公司 |
Led裝置及製造方法
|
|
TWI858136B
(zh)
*
|
2020-09-18 |
2024-10-11 |
許華珍 |
一種顯示裝置
|
|
KR20220045478A
(ko)
|
2020-10-05 |
2022-04-12 |
삼성전자주식회사 |
마이크로 발광 디스플레이 장치 및 그 제조 방법
|
|
US11600656B2
(en)
*
|
2020-12-14 |
2023-03-07 |
Lumileds Llc |
Light emitting diode device
|
|
CN114744092B
(zh)
*
|
2021-01-08 |
2025-04-18 |
鑫天虹(厦门)科技有限公司 |
减少非辐射复合的微发光二极体的制作方法及制作机台
|
|
US20240128400A1
(en)
*
|
2021-03-05 |
2024-04-18 |
The Regents Of The University Of California |
Method to improve the performance of gallium-containing micron-sized light-emitting devices
|
|
US20220320366A1
(en)
*
|
2021-03-31 |
2022-10-06 |
Semileds Corporation |
Method To Remove An Isolation Layer On The Corner Between The Semiconductor Light Emitting Device To The Growth Substrate
|
|
DE102021109960A1
(de)
*
|
2021-04-20 |
2022-10-20 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips
|
|
DE102021207298A1
(de)
*
|
2021-07-09 |
2023-01-12 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Verfahren zur herstellung eines strahlungsemittierenden halbleiterchips und strahlungsemittierender halbleiterchip
|
|
CN113851568A
(zh)
*
|
2021-08-19 |
2021-12-28 |
厦门大学 |
一种利用原子层沉积技术提高微型led调制带宽的办法
|
|
KR20230033773A
(ko)
*
|
2021-09-01 |
2023-03-09 |
삼성디스플레이 주식회사 |
발광 소자 및 이를 포함하는 표시 장치
|
|
JP7367743B2
(ja)
*
|
2021-10-18 |
2023-10-24 |
信越半導体株式会社 |
接合型半導体ウェーハの製造方法
|
|
DE112021008444T5
(de)
*
|
2021-11-10 |
2024-09-12 |
Ams-Osram International Gmbh |
Verfahren zur herstellung eines optoelektronischen halbleiterchips
|
|
DE102021129843A1
(de)
|
2021-11-16 |
2023-05-17 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Verfahren zur herstellung einer vielzahl strahlungsemittierender halbleiterchips und strahlungsemittierender halbleiterchip
|
|
CN114188453A
(zh)
*
|
2021-11-30 |
2022-03-15 |
重庆康佳光电技术研究院有限公司 |
垂直led芯片及其制备方法、led阵列及显示面板
|
|
JP7272412B1
(ja)
|
2021-12-03 |
2023-05-12 |
信越半導体株式会社 |
接合型半導体ウェーハの製造方法
|
|
KR20240129066A
(ko)
*
|
2022-01-14 |
2024-08-27 |
에이엠에스-오스람 인터내셔널 게엠베하 |
광전자 디바이스를 프로세싱하는 방법 및 광전자 디바이스
|
|
JP2025505337A
(ja)
*
|
2022-01-31 |
2025-02-26 |
ジェイド バード ディスプレイ（シャンハイ） リミテッド |
再成長層を有するマイクロｌｅｄパネル及びその製造方法
|
|
KR20230130201A
(ko)
*
|
2022-03-02 |
2023-09-12 |
삼성디스플레이 주식회사 |
발광 소자 및 이를 포함한 표시 장치, 및 발광 소자의 제조 방법
|
|
US12148863B2
(en)
|
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