JP2018064059A5 - - Google Patents
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- Publication number
- JP2018064059A5 JP2018064059A5 JP2016202787A JP2016202787A JP2018064059A5 JP 2018064059 A5 JP2018064059 A5 JP 2018064059A5 JP 2016202787 A JP2016202787 A JP 2016202787A JP 2016202787 A JP2016202787 A JP 2016202787A JP 2018064059 A5 JP2018064059 A5 JP 2018064059A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- disposed
- interlayer insulating
- insulating film
- pad portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000011229 interlayer Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000010410 layer Substances 0.000 claims description 8
- 230000001939 inductive effect Effects 0.000 claims description 6
- 238000010292 electrical insulation Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016202787A JP2018064059A (ja) | 2016-10-14 | 2016-10-14 | 半導体装置 |
| PCT/JP2017/030227 WO2018070111A1 (ja) | 2016-10-14 | 2017-08-24 | 半導体装置 |
| US16/355,917 US10916506B2 (en) | 2016-10-14 | 2019-03-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016202787A JP2018064059A (ja) | 2016-10-14 | 2016-10-14 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018064059A JP2018064059A (ja) | 2018-04-19 |
| JP2018064059A5 true JP2018064059A5 (enExample) | 2019-01-17 |
Family
ID=61906230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016202787A Pending JP2018064059A (ja) | 2016-10-14 | 2016-10-14 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10916506B2 (enExample) |
| JP (1) | JP2018064059A (enExample) |
| WO (1) | WO2018070111A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210133524A (ko) * | 2020-04-29 | 2021-11-08 | 삼성전자주식회사 | 배선 구조체 및 이를 포함하는 반도체 패키지 |
| CN111900087B (zh) * | 2020-08-31 | 2022-09-20 | 华虹半导体(无锡)有限公司 | Igbt器件的制造方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766201A (ja) * | 1993-08-27 | 1995-03-10 | Matsushita Electric Ind Co Ltd | 配線のエレクトロマイグレーション寿命試験用半導体装置及びその製造方法、並びにその試験方法 |
| JPH1154621A (ja) * | 1997-08-07 | 1999-02-26 | Sony Corp | 半導体装置およびその製造方法 |
| JP4051524B2 (ja) * | 2000-09-18 | 2008-02-27 | セイコーエプソン株式会社 | インパクトプリンタのヘッド駆動回路 |
| DE60025995T2 (de) * | 1999-10-22 | 2006-08-17 | Seiko Epson Corp. | Kopfsteuerungsschaltung für Anschlagpunktdrucker |
| US6733195B2 (en) | 1999-10-22 | 2004-05-11 | Seiko Epson Corporation | Head drive circuit for impact dot printer |
| JP4528035B2 (ja) | 2004-06-18 | 2010-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2008091454A (ja) * | 2006-09-29 | 2008-04-17 | Rohm Co Ltd | 半導体装置及び半導体装置の製造方法 |
| JP4830829B2 (ja) * | 2006-12-06 | 2011-12-07 | 株式会社デンソー | 絶縁ゲートトランジスタの駆動回路 |
| JP2008244383A (ja) * | 2007-03-29 | 2008-10-09 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
| US7772080B2 (en) * | 2008-07-02 | 2010-08-10 | Stats Chippac, Ltd. | Semiconductor device and method of providing electrostatic discharge protection for integrated passive devices |
| JP2011216771A (ja) * | 2010-04-01 | 2011-10-27 | Rohm Co Ltd | 半導体装置およびその製造方法 |
| JP2012094593A (ja) * | 2010-10-25 | 2012-05-17 | Renesas Electronics Corp | 半導体装置および半導体装置の製造方法 |
| JP5772926B2 (ja) * | 2013-01-07 | 2015-09-02 | 株式会社デンソー | 半導体装置 |
| JP6235353B2 (ja) * | 2014-01-22 | 2017-11-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP6425532B2 (ja) | 2014-12-17 | 2018-11-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2016
- 2016-10-14 JP JP2016202787A patent/JP2018064059A/ja active Pending
-
2017
- 2017-08-24 WO PCT/JP2017/030227 patent/WO2018070111A1/ja not_active Ceased
-
2019
- 2019-03-18 US US16/355,917 patent/US10916506B2/en not_active Expired - Fee Related
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