JP2019204826A5 - - Google Patents

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Publication number
JP2019204826A5
JP2019204826A5 JP2018097252A JP2018097252A JP2019204826A5 JP 2019204826 A5 JP2019204826 A5 JP 2019204826A5 JP 2018097252 A JP2018097252 A JP 2018097252A JP 2018097252 A JP2018097252 A JP 2018097252A JP 2019204826 A5 JP2019204826 A5 JP 2019204826A5
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JP
Japan
Prior art keywords
electrode portion
insulating film
capacitor
layer electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2018097252A
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English (en)
Japanese (ja)
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JP6988688B2 (ja
JP2019204826A (ja
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Publication date
Application filed filed Critical
Priority to JP2018097252A priority Critical patent/JP6988688B2/ja
Priority claimed from JP2018097252A external-priority patent/JP6988688B2/ja
Priority to PCT/JP2019/018571 priority patent/WO2019225339A1/ja
Publication of JP2019204826A publication Critical patent/JP2019204826A/ja
Publication of JP2019204826A5 publication Critical patent/JP2019204826A5/ja
Priority to US17/084,854 priority patent/US11476187B2/en
Application granted granted Critical
Publication of JP6988688B2 publication Critical patent/JP6988688B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2018097252A 2018-05-21 2018-05-21 半導体装置 Active JP6988688B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018097252A JP6988688B2 (ja) 2018-05-21 2018-05-21 半導体装置
PCT/JP2019/018571 WO2019225339A1 (ja) 2018-05-21 2019-05-09 半導体装置
US17/084,854 US11476187B2 (en) 2018-05-21 2020-10-30 Semiconductor device having capacitor on substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018097252A JP6988688B2 (ja) 2018-05-21 2018-05-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2019204826A JP2019204826A (ja) 2019-11-28
JP2019204826A5 true JP2019204826A5 (enExample) 2020-08-27
JP6988688B2 JP6988688B2 (ja) 2022-01-05

Family

ID=68615994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018097252A Active JP6988688B2 (ja) 2018-05-21 2018-05-21 半導体装置

Country Status (3)

Country Link
US (1) US11476187B2 (enExample)
JP (1) JP6988688B2 (enExample)
WO (1) WO2019225339A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11901282B2 (en) * 2019-04-20 2024-02-13 Texas Instruments Incorporated Device isolators
JP7022731B2 (ja) 2019-11-12 2022-02-18 Kddi株式会社 多数のアンテナを選択的に使用する制御装置、制御方法、及びプログラム。
JP7725944B2 (ja) * 2021-08-30 2025-08-20 株式会社デンソー 信号伝送デバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07312415A (ja) * 1994-05-16 1995-11-28 Yamaha Corp 半導体集積回路
US5745335A (en) * 1996-06-27 1998-04-28 Gennum Corporation Multi-layer film capacitor structures and method
JP3603240B2 (ja) 1997-01-09 2004-12-22 富士通株式会社 キャパシタ装置及びその製造方法
JP2001177057A (ja) 1999-12-17 2001-06-29 Tokyo Electron Ltd アナログ回路用キャパシタ及びその製造方法
JP4191959B2 (ja) 2002-06-21 2008-12-03 富士通株式会社 薄膜積層デバイス、回路および薄膜積層デバイスの製造方法
KR100665848B1 (ko) * 2005-03-21 2007-01-09 삼성전자주식회사 적층 타입 디커플링 커패시터를 갖는 반도체 장치
US7763923B2 (en) * 2005-12-29 2010-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal capacitor structure having low voltage dependence
JP2014229711A (ja) 2013-05-21 2014-12-08 ルネサスエレクトロニクス株式会社 半導体装置
US9041148B2 (en) * 2013-06-13 2015-05-26 Qualcomm Incorporated Metal-insulator-metal capacitor structures
JP2017017272A (ja) 2015-07-06 2017-01-19 富士通株式会社 キャパシタ、半導体装置、キャパシタの製造方法及び半導体装置の製造方法
US10748986B2 (en) * 2017-11-21 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with capacitors
US11222841B2 (en) * 2019-09-05 2022-01-11 Texas Instruments Incorporated Stacked capacitor

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