JP6988688B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6988688B2
JP6988688B2 JP2018097252A JP2018097252A JP6988688B2 JP 6988688 B2 JP6988688 B2 JP 6988688B2 JP 2018097252 A JP2018097252 A JP 2018097252A JP 2018097252 A JP2018097252 A JP 2018097252A JP 6988688 B2 JP6988688 B2 JP 6988688B2
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JP
Japan
Prior art keywords
electrode portion
insulating film
capacitor
intermediate electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018097252A
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English (en)
Japanese (ja)
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JP2019204826A (ja
JP2019204826A5 (enExample
Inventor
伸 瀧澤
誠二 野間
裕介 野中
振一郎 柳
淳志 笠原
奨悟 池浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2018097252A priority Critical patent/JP6988688B2/ja
Priority to PCT/JP2019/018571 priority patent/WO2019225339A1/ja
Publication of JP2019204826A publication Critical patent/JP2019204826A/ja
Publication of JP2019204826A5 publication Critical patent/JP2019204826A5/ja
Priority to US17/084,854 priority patent/US11476187B2/en
Application granted granted Critical
Publication of JP6988688B2 publication Critical patent/JP6988688B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2018097252A 2018-05-21 2018-05-21 半導体装置 Active JP6988688B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018097252A JP6988688B2 (ja) 2018-05-21 2018-05-21 半導体装置
PCT/JP2019/018571 WO2019225339A1 (ja) 2018-05-21 2019-05-09 半導体装置
US17/084,854 US11476187B2 (en) 2018-05-21 2020-10-30 Semiconductor device having capacitor on substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018097252A JP6988688B2 (ja) 2018-05-21 2018-05-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2019204826A JP2019204826A (ja) 2019-11-28
JP2019204826A5 JP2019204826A5 (enExample) 2020-08-27
JP6988688B2 true JP6988688B2 (ja) 2022-01-05

Family

ID=68615994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018097252A Active JP6988688B2 (ja) 2018-05-21 2018-05-21 半導体装置

Country Status (3)

Country Link
US (1) US11476187B2 (enExample)
JP (1) JP6988688B2 (enExample)
WO (1) WO2019225339A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11901282B2 (en) * 2019-04-20 2024-02-13 Texas Instruments Incorporated Device isolators
JP7022731B2 (ja) 2019-11-12 2022-02-18 Kddi株式会社 多数のアンテナを選択的に使用する制御装置、制御方法、及びプログラム。
JP7725944B2 (ja) * 2021-08-30 2025-08-20 株式会社デンソー 信号伝送デバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07312415A (ja) * 1994-05-16 1995-11-28 Yamaha Corp 半導体集積回路
US5745335A (en) * 1996-06-27 1998-04-28 Gennum Corporation Multi-layer film capacitor structures and method
JP3603240B2 (ja) 1997-01-09 2004-12-22 富士通株式会社 キャパシタ装置及びその製造方法
JP2001177057A (ja) 1999-12-17 2001-06-29 Tokyo Electron Ltd アナログ回路用キャパシタ及びその製造方法
JP4191959B2 (ja) 2002-06-21 2008-12-03 富士通株式会社 薄膜積層デバイス、回路および薄膜積層デバイスの製造方法
KR100665848B1 (ko) * 2005-03-21 2007-01-09 삼성전자주식회사 적층 타입 디커플링 커패시터를 갖는 반도체 장치
US7763923B2 (en) * 2005-12-29 2010-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal capacitor structure having low voltage dependence
JP2014229711A (ja) 2013-05-21 2014-12-08 ルネサスエレクトロニクス株式会社 半導体装置
US9041148B2 (en) * 2013-06-13 2015-05-26 Qualcomm Incorporated Metal-insulator-metal capacitor structures
JP2017017272A (ja) 2015-07-06 2017-01-19 富士通株式会社 キャパシタ、半導体装置、キャパシタの製造方法及び半導体装置の製造方法
US10748986B2 (en) * 2017-11-21 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with capacitors
US11222841B2 (en) * 2019-09-05 2022-01-11 Texas Instruments Incorporated Stacked capacitor

Also Published As

Publication number Publication date
JP2019204826A (ja) 2019-11-28
US11476187B2 (en) 2022-10-18
US20210074631A1 (en) 2021-03-11
WO2019225339A1 (ja) 2019-11-28

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