JP2017123432A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017123432A JP2017123432A JP2016002680A JP2016002680A JP2017123432A JP 2017123432 A JP2017123432 A JP 2017123432A JP 2016002680 A JP2016002680 A JP 2016002680A JP 2016002680 A JP2016002680 A JP 2016002680A JP 2017123432 A JP2017123432 A JP 2017123432A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 239000010410 layer Substances 0.000 claims abstract description 63
- 239000011229 interlayer Substances 0.000 claims abstract description 59
- 150000004767 nitrides Chemical class 0.000 claims abstract description 55
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 description 22
- 238000012986 modification Methods 0.000 description 22
- 239000000758 substrate Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016570 AlCu Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H01—ELECTRIC ELEMENTS
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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- Junction Field-Effect Transistors (AREA)
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】実施形態によれば、半導体装置は、第1の窒化物半導体層と、第2の窒化物半導体層と、ゲート電極と、ドレイン電極と、ソース電極と、層状に設けられた複数の層間絶縁膜と、複数の層間絶縁膜の中で同じ層間絶縁膜に覆われた複数のフィールドプレートであって、ゲート電極よりも第2の窒化物半導体層から離れ、かつゲート電極よりもドレイン電極の近くに設けられた第1のフィールドプレートと、第1のフィールドプレートよりも第2の窒化物半導体層から離れ、かつ第1のフィールドプレートよりもドレイン電極の近くに設けられた第2のフィールドプレートと、を含む複数のフィールドプレートと、を備える。
【選択図】図1
Description
図6は、変形例1に係る半導体装置の概略的な構造を示す断面図である。図6では、上述した半導体装置1と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
図7は、変形例2に係る半導体装置の概略的な構造を示す断面図である。図7では、上述した半導体装置1と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
図8は、変形例3に係る半導体装置の概略的な構造を示す断面図である。図8では、上述した半導体装置1と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
Claims (6)
- 第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に設けられ、前記第1の窒化物半導体層よりもバンドギャップが大きい第2の窒化物半導体層と、
前記第2の窒化物半導体層の上に設けられたゲート電極と、
前記第2の窒化物半導体層の上で、前記ゲート電極を挟んで互いに対向するドレイン電極およびソース電極と、
前記第2の窒化物半導体層の上に層状に設けられた複数の層間絶縁膜と、
前記複数の層間絶縁膜の中で同じ層間絶縁膜に覆われた複数のフィールドプレートであって、前記ゲート電極よりも前記第2の窒化物半導体層から離れ、かつ前記ゲート電極よりも前記ドレイン電極の近くに設けられた第1のフィールドプレートと、前記第1のフィールドプレートよりも前記第2の窒化物半導体層から離れ、かつ前記第1のフィールドプレートよりも前記ドレイン電極の近くに設けられた第2のフィールドプレートと、を含む複数のフィールドプレートと、
を備える半導体装置。 - 前記複数の層間絶縁膜は、前記ゲート電極を覆うように設けられた第1の層間絶縁膜と、前記第1の層間絶縁膜の上に設けられた第2の層間絶縁膜と、を含み、
前記第2の層間絶縁膜は、その上面に前記第1の層間絶縁膜側に凹んだ凹部を備え、
前記第1のフィールドプレートは前記第1の層間絶縁膜と前記第2の層間絶縁膜との間に設けられ、前記第2のフィールドプレートは前記凹部内に設けられている、請求項1に記載の半導体装置。 - 前記第1のフィールドプレートおよび前記第2のフィールドプレートは、それぞれ複数の導電部材で構成され、前記複数の導電部材は、その幅方向に並んで配置されている、請求項2に記載の半導体装置。
- 前記第1のフィールドプレートは、1つの導電部材で構成され、
前記第2のフィールドプレートは、複数の導電部材で構成され、前記複数の導電部材は、その幅方向に並んで配置されている、請求項2に記載の半導体装置。 - 前記複数の導電部材の幅が、相互に異なっている、請求項3に記載の半導体装置。
- 前記ゲート電極と電気的に接続されるゲートパッドと、前記ドレイン電極と電気的に接続されるドレインパッドと、前記ソース電極と電気的に接続されるソースパッドと、前記複数のフィールドプレートのいずれかに電気的に接続される複数のフィールドプレートパッドと、を備え、
前記複数のフィールドプレートパッドの電位が、前記ゲートパッドの電位もしくは前記ソースパッドの電位と同電位であるか、または前記ゲートパッドと、前記ドレインパッドと、前記ソースパッドのいずれにも電気的に接続されていないフローティング電位と同電位である、請求項1から5のいずれかに記載の半導体装置。
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JP2016002680A JP2017123432A (ja) | 2016-01-08 | 2016-01-08 | 半導体装置 |
US15/231,361 US20170200818A1 (en) | 2016-01-08 | 2016-08-08 | Semiconductor device |
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JP2016002680A JP2017123432A (ja) | 2016-01-08 | 2016-01-08 | 半導体装置 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2019087740A (ja) * | 2017-11-02 | 2019-06-06 | ローム株式会社 | 半導体装置 |
JP2019102756A (ja) * | 2017-12-07 | 2019-06-24 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
KR20200053465A (ko) * | 2017-09-25 | 2020-05-18 | 레이던 컴퍼니 | 전계 효과 트랜지스터를 위한 전극 구조물 |
JP2020150193A (ja) * | 2019-03-15 | 2020-09-17 | 株式会社東芝 | 半導体装置 |
JP2020161553A (ja) * | 2019-03-25 | 2020-10-01 | 株式会社アドバンテスト | 半導体装置 |
JP2020177942A (ja) * | 2019-04-15 | 2020-10-29 | 株式会社東芝 | 半導体装置 |
US11101383B2 (en) | 2018-09-18 | 2021-08-24 | Kabushiki Kaisha Toshiba | Semiconductor device with reduced electric field crowding |
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- 2016-01-08 JP JP2016002680A patent/JP2017123432A/ja active Pending
- 2016-08-08 US US15/231,361 patent/US20170200818A1/en not_active Abandoned
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KR102564666B1 (ko) * | 2017-09-25 | 2023-08-09 | 레이던 컴퍼니 | 전계 효과 트랜지스터를 위한 전극 구조물 |
JP7101768B2 (ja) | 2017-09-25 | 2022-07-15 | レイセオン カンパニー | 電界効果トランジスタの電極構造 |
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JP2019087740A (ja) * | 2017-11-02 | 2019-06-06 | ローム株式会社 | 半導体装置 |
JP7161915B2 (ja) | 2017-11-02 | 2022-10-27 | ローム株式会社 | 半導体装置 |
JP2019102756A (ja) * | 2017-12-07 | 2019-06-24 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
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JP2020150193A (ja) * | 2019-03-15 | 2020-09-17 | 株式会社東芝 | 半導体装置 |
CN111697063B (zh) * | 2019-03-15 | 2023-12-12 | 株式会社东芝 | 半导体装置 |
JP2020161553A (ja) * | 2019-03-25 | 2020-10-01 | 株式会社アドバンテスト | 半導体装置 |
JP7227048B2 (ja) | 2019-03-25 | 2023-02-21 | 株式会社アドバンテスト | 半導体装置 |
JP2020177942A (ja) * | 2019-04-15 | 2020-10-29 | 株式会社東芝 | 半導体装置 |
JP7366576B2 (ja) | 2019-04-15 | 2023-10-23 | 株式会社東芝 | 半導体装置 |
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