WO2015129131A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- WO2015129131A1 WO2015129131A1 PCT/JP2014/083295 JP2014083295W WO2015129131A1 WO 2015129131 A1 WO2015129131 A1 WO 2015129131A1 JP 2014083295 W JP2014083295 W JP 2014083295W WO 2015129131 A1 WO2015129131 A1 WO 2015129131A1
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- guard ring
- ring structure
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- formation region
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 145
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 42
- 238000002955 isolation Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 abstract description 19
- 150000002500 ions Chemical class 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 230000004888 barrier function Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000002161 passivation Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a semiconductor device, and more particularly, to a semiconductor device provided with a guard ring structure that prevents chipping and moisture from entering a semiconductor element such as a transistor.
- a guard ring made of metal wiring is formed along the periphery of the chip in order to prevent deterioration of the semiconductor element due to intrusion of chipping, cracks, moisture, movable ions, etc. Technology is used.
- the guard ring in order to prevent moisture from entering even if a part of the guard ring has a defect, it is provided between the first guard ring surrounding the element forming region and between the element forming region and the first guard ring.
- a second guard ring surrounding the periphery of the element formation region, connecting the first guard ring and the second guard ring, and defining a plurality of regions between the first guard ring and the second guard ring.
- a semiconductor device divided into areas has been proposed (see, for example, Japanese Patent Application Laid-Open No. 2004-304124 (Patent Document 1)).
- the inventors have found that a crack due to dicing reaches the first guard ring, and the conductive die bond material comes into contact with the guard ring to electrically Was connected.
- the guard ring and the semiconductor element are separated from each other.
- the interface of the GaN-based semiconductor is difficult, and leakage occurs between the GaN semiconductor element and the guard ring. It has been found that there is a problem that current is generated, which causes leakage between the die bond material and the semiconductor element through the guard ring.
- an object of the present invention is to provide a highly reliable semiconductor device capable of preventing leakage between a semiconductor element and a die bond material and preventing moisture and mobile ions from entering the semiconductor element.
- a semiconductor device of the present invention is An element formation region in which a semiconductor element is formed on a semiconductor substrate; An insulating film formed at least outside the element formation region on the semiconductor substrate; A wall-shaped first guard ring structure formed on the semiconductor substrate so as to surround the periphery of the element formation region and extending in the substrate thickness direction via the insulating film; A wall that is formed between the element formation region on the semiconductor substrate and the first guard ring structure so as to surround the periphery of the element formation region, and extends in the substrate thickness direction via the insulating film A second guard ring structure having a shape, The first and second guard ring structures are made of a conductive material, The first guard ring structure is provided in a state of being insulated from the semiconductor substrate, the element formation region, and the second guard ring structure.
- An element isolation region was formed between the second guard ring structure and the element formation region.
- Each of the first guard ring structure and the second guard ring structure is formed so as to surround the periphery of the element formation region and with a gap in the substrate thickness direction through the insulating film.
- annular contact portion is merely an example, and there is no problem even if a wall is formed by a combination of a strip-shaped, square-shaped, or circular-shaped contact portion.
- the second guard ring structure is in contact with at least one of the semiconductor substrate or a semiconductor layer formed on the semiconductor substrate.
- the semiconductor element formed in the element formation region has at least a GaN-based semiconductor layer.
- the first guard ring structure can prevent chipping and cracks due to dicing from reaching the second guard ring structure and the semiconductor element. Since the ring structure is insulated from the semiconductor substrate, the element formation region, and the second guard ring structure, leakage between the die bond material for mounting the semiconductor element and the semiconductor element does not occur. Further, the second guard ring structure can prevent moisture from entering the semiconductor element. Accordingly, it is possible to realize a highly reliable semiconductor device that can prevent leakage between the semiconductor element and the die bonding material and can prevent moisture and movable ions from entering the semiconductor element.
- FIG. 1 is a plan view showing a configuration of a semiconductor device according to an embodiment of the present invention.
- FIG. 2 is a sectional view taken along line II-II in FIG.
- FIG. 1 shows the configuration of the semiconductor device according to the first embodiment of the present invention.
- a GaN HFET Hetero-junction Field Effect Transistor
- a wall-shaped first guard ring structure 11 is formed so as to surround a square-shaped element formation region 10.
- a wall-like second guard ring structure 12 is formed between the first guard ring structure 11 and the element forming region 10. The first guard ring structure 11 and the second guard ring structure 12 are not connected to each other and are electrically separated.
- the semiconductor element is an HFET, but it may be a bipolar transistor or a diode.
- FIG. 2 is a cross-sectional view taken along line II-II in FIG. 1.
- This semiconductor device is formed on a silicon substrate 21 as an example of a semiconductor substrate and a silicon substrate 21 as shown in FIG.
- insulating films 26 and 27 and a passivation film 28 are sequentially stacked on the GaN-based channel layer 22.
- the insulating films 26 and 27 and the passivation film 28 are made of silicon nitride, silicon oxide, or the like. This passivation film 28 prevents moisture and mobile ions from entering from the surface.
- the first guard ring structure 11 is insulated from the silicon substrate 21, the GaN-based channel layer 22, and the GaN-based barrier layer 23 by insulating films 26 and 27 and is not in contact therewith.
- the first guard ring structure 11 and the second guard ring structure 12 are insulated by an insulating film 27 to prevent the first and second guard ring structures 11 and 12 from contacting each other.
- a wall-like second guard ring structure 12 is provided so as to be in contact with the GaN-based barrier layer 23 and extending in the substrate thickness direction via the insulating films 26 and 27.
- the second guard ring structure 12 includes a metal layer 121 formed on the GaN-based barrier layer 23, a contact portion 122 formed on the metal layer 121, and a contact portion 122 on the insulating film 26.
- the metal layers 121, 123, and 125 are examples of conductive layers.
- the metal layers 121, 123, 125 and the contact portions 122, 124 are formed in an annular shape so as to surround the element forming region 10.
- the second guard ring structure 12 prevents moisture and mobile ions from entering the element forming region 10 from the side wall portion of the semiconductor device.
- the metal layers 121, 123, 125 and the contact portions 122, 124 of the second guard ring structure 12 are made of a metal such as aluminum, copper, titanium as an example of a conductive material.
- the metal layer 121 that is the lowermost part of the second guard ring structure 12 may be formed so as to be in contact with the GaN-based channel layer 22 by removing the GaN-based barrier layer 23.
- An element isolation region 20 is formed between the second guard ring structure 12 and the element formation region 10 by removing the GaN-based barrier layer 23 between the second guard ring structure 12 and the semiconductor element.
- the element isolation region may have another element isolation structure by ion implantation or the like.
- Chipping and cracks are generated when the semiconductor device is divided into chips by dicing.
- the first guard ring structure 11 can absorb mechanical shock to prevent the chipping and cracks from entering the chip. .
- the die-bonding material and the outer first guard ring structure 11 may come into contact due to chipping or cracking due to dicing.
- the first guard ring structure 11 and the second guard ring structure 12 are electrically separated, even if the die bond material and the first guard ring structure 11 come into contact with each other, the second No leakage occurs between the guard ring structure 12 and the die bond material.
- the first guard ring structure 11 includes annular metal layers 111 and 113 formed so as to surround the element forming region 10 and at intervals in the substrate thickness direction with the insulating film 27 interposed therebetween.
- the second guard ring structure 12 is formed on the GaN-based barrier layer 23 by the annular contact portion 112 formed on the insulating film 27 so as to connect the metal layers 111 and 113.
- the semiconductor device of the second embodiment has the same effect as the semiconductor device of the first embodiment.
- An element isolation region 20 was formed between the second guard ring structure 12 and the element formation region 10.
- the first guard ring structure 11 and the second guard ring structure 12 are spaced from each other so as to surround the element forming region 10 and through the insulating films 26 and 27 in the substrate thickness direction. Formed on the insulating films 26, 27 so as to connect the annular conductive layers 111, 113, 121, 123, 125 to the annular conductive layers 111, 113, 121, 123, 125. Contact portions 112, 122, and 124.
- the semiconductor element formed in the element formation region 10 has at least GaN-based semiconductor layers 22 and 23.
- the semiconductor element formed in the element formation region 10 has at least the GaN-based semiconductor layers 22 and 23
- chipping and cracks are likely to occur particularly in dicing divided into chips.
- the semiconductor element Can prevent leakage between the semiconductor element and the die-bonding material and prevent intrusion of moisture and mobile ions into the semiconductor element, thereby realizing a highly reliable GaN-based semiconductor device.
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Abstract
Description
半導体基板上に半導体素子が形成された素子形成領域と、
上記半導体基板上の少なくとも上記素子形成領域の外側に形成された絶縁膜と、
上記半導体基板上に上記素子形成領域の周囲を囲むように形成され、上記絶縁膜を介して基板厚さ方向に延在する壁状の第1のガードリング構造体と、
上記半導体基板上の上記素子形成領域と上記第1のガードリング構造体との間に上記素子形成領域の周囲を囲むように形成され、上記絶縁膜を介して基板厚さ方向に延在する壁状の第2のガードリング構造体と
を備え、
上記第1,第2のガードリング構造体は、導電材料からなり、
上記第1のガードリング構造体は、上記半導体基板と上記素子形成領域および上記第2のガードリング構造体に対して絶縁された状態で設けられていることを特徴とする。
上記第2のガードリング構造体と上記素子形成領域との間に素子分離領域を形成した。
上記第1のガードリング構造体と上記第2のガードリング構造体の夫々は、上記素子形成領域の周囲を囲むようにかつ上記絶縁膜を介して基板厚さ方向に間隔を開けて形成された環状の導電層と、上記環状の導電層間を接続するように上記絶縁膜に形成された環状のコンタクト部とを有する。
上記第2のガードリング構造体は、上記半導体基板または上記半導体基板上に形成された半導体層の少なくとも一方に接している。
上記素子形成領域に形成された上記半導体素子は、少なくともGaN系半導体層を有する。
図1はこの発明の第1実施形態の半導体装置の構成を示している。この第1実施形態の半導体装置は、半導体素子としてGaN系HFET(Hetero-junction Field Effect Transistor;ヘテロ接合電界効果トランジスタ)が素子形成領域10に形成されている。
上記第1実施形態では、GaN系HFETを用いて説明したが、この発明の第2実施形態の一例としてシリコン系半導体装置でも構わない。この第2実施形態では、半導体層や半導体素子を除いて図1,図2に示す第1実施形態と同一の構成をしている。
半導体基板21上に半導体素子が形成された素子形成領域10と、
上記半導体基板21上の少なくとも上記素子形成領域10の外側に形成された絶縁膜26,27と、
上記半導体基板21上に上記素子形成領域10の周囲を囲むように形成され、上記絶縁膜27を介して基板厚さ方向に延在する壁状の第1のガードリング構造体11と、
上記半導体基板21上の上記素子形成領域10と上記第1のガードリング構造体11との間に上記素子形成領域10の周囲を囲むように形成され、上記絶縁膜26,27を介して基板厚さ方向に延在する壁状の第2のガードリング構造体12と
を備え、
上記第1,第2のガードリング構造体11,12は、導電材料からなり、
上記第1のガードリング構造体11は、上記半導体基板21と上記素子形成領域10および上記第2のガードリング構造体12に対して絶縁された状態で設けられていることを特徴とする。
上記第2のガードリング構造体12と上記素子形成領域10との間に素子分離領域20を形成した。
上記第1のガードリング構造体11と上記第2のガードリング構造体12の夫々は、上記素子形成領域10の周囲を囲むようにかつ上記絶縁膜26,27を介して基板厚さ方向に間隔を開けて形成された環状の導電層111,113,121,123,125と、上記環状の導電層111,113,121,123,125間を接続するように上記絶縁膜26,27に形成されたコンタクト部112,122,124とを有する。
上記第2のガードリング構造体12は、上記半導体基板21、上記半導体基板21上に形成された半導体層22,23の少なくとも一つに接している。
上記素子形成領域10に形成された上記半導体素子は、少なくともGaN系半導体層22,23を有する。
11…第1のガードリング構造体
12…第2のガードリング構造体
21…シリコン基板
22…GaN系チャネル層
23…GaN系バリア層
26,27…絶縁膜
28…パッシベーション膜
111,113,121,123,125…金属層
112,122,124…コンタクト部
Claims (5)
- 半導体基板(21)上に半導体素子が形成された素子形成領域(10)と、
上記半導体基板(21)上の少なくとも上記素子形成領域(10)の外側に形成された絶縁膜(26,27)と、
上記半導体基板(21)上に上記素子形成領域(10)の周囲を囲むように形成され、上記絶縁膜(27)を介して基板厚さ方向に延在する壁状の第1のガードリング構造体(11)と、
上記半導体基板(21)上の上記素子形成領域(10)と上記第1のガードリング構造体(11)との間に上記素子形成領域(10)の周囲を囲むように形成され、上記絶縁膜(26,27)を介して基板厚さ方向に延在する壁状の第2のガードリング構造体(12)と
を備え、
上記第1,第2のガードリング構造体(11,12)は、導電材料からなり、
上記第1のガードリング構造体(11)は、上記半導体基板(21)と上記素子形成領域(10)および上記第2のガードリング構造体(12)に対して絶縁された状態で設けられていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
上記第2のガードリング構造体(12)と上記素子形成領域(10)との間に素子分離領域(20)を形成したことを特徴とする半導体装置。 - 請求項1または2に記載の半導体装置において、
上記第1のガードリング構造体(11)と上記第2のガードリング構造体(12)の夫々は、上記素子形成領域(10)の周囲を囲むようにかつ上記絶縁膜(26,27)を介して基板厚さ方向に間隔を開けて形成された環状の導電層(111,113,121,123,125)と、上記環状の導電層(111,113,121,123,125)間を接続するように上記絶縁膜(26,27)に形成されたコンタクト部(112,122,124)とを有することを特徴とする半導体装置。 - 請求項1から3までのいずれか1つに記載の半導体装置において、
上記第2のガードリング構造体(12)は、上記半導体基板(21)、上記半導体基板(21)上に形成された半導体層(22,23)の少なくとも一つに接していることを特徴とする半導体装置。 - 請求項1から4までのいずれか1つに記載の半導体装置において、
上記素子形成領域(10)に形成された上記半導体素子は、少なくともGaN系半導体層(22,23)を有することを特徴とする半導体装置。
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