JP5710995B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5710995B2 JP5710995B2 JP2011019603A JP2011019603A JP5710995B2 JP 5710995 B2 JP5710995 B2 JP 5710995B2 JP 2011019603 A JP2011019603 A JP 2011019603A JP 2011019603 A JP2011019603 A JP 2011019603A JP 5710995 B2 JP5710995 B2 JP 5710995B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- temperature sensor
- temperature
- insulating substrate
- metal wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
Tp=Ts−ΔTjs
Ta>Tc>Tb
Ta>Tc≒Tb
Claims (2)
- 絶縁基板と、
前記絶縁基板の一面に形成された第1金属配線層および第2金属配線層と、
前記第1金属配線層に接合された少なくとも1つの半導体素子と、
前記第2金属配線層に接合され、前記絶縁基板の温度を測定することにより前記半導体素子の温度を検出する温度センサと、
前記第1金属配線層と前記半導体素子とを接合する第1接合部材と、
前記第2金属配線層と前記温度センサとを接合する第2接合部材と、
前記絶縁基板の他面に形成された金属層と、
前記絶縁基板の他面に対向するようにして前記金属層に接合された放熱部材と、
前記金属層と前記放熱部材とを接合する第3接合部材とを備え、
前記放熱部材における前記絶縁基板の前記他面に対向する面では、前記温度センサの直下領域から温度センサ側の端部に向けて、相手部位との間に空間が形成され、
前記放熱部材における前記絶縁基板の他面に対向する面では、前記半導体素子の直下領域の全ては、前記第3接合部材により前記金属層と接合され、
前記半導体素子の前記温度センサ側端面と前記第3接合部材の前記温度センサの直下領域側端面との間隔が前記温度センサの熱抵抗率の変化率に基づいて設定されていることを特徴とする半導体装置。 - 前記半導体素子の前記温度センサ側端面と前記第3接合部材の前記温度センサの直下領域側端面との間隔は、前記温度センサの熱抵抗率の変化率が略一定となる放熱特性が飽和する位置に基づいて設定されていることを特徴とする請求項1に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011019603A JP5710995B2 (ja) | 2011-02-01 | 2011-02-01 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011019603A JP5710995B2 (ja) | 2011-02-01 | 2011-02-01 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012160602A JP2012160602A (ja) | 2012-08-23 |
JP5710995B2 true JP5710995B2 (ja) | 2015-04-30 |
Family
ID=46840885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011019603A Expired - Fee Related JP5710995B2 (ja) | 2011-02-01 | 2011-02-01 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5710995B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6354641B2 (ja) * | 2015-04-06 | 2018-07-11 | 株式会社デンソー | 電子装置 |
US10260961B2 (en) | 2015-12-21 | 2019-04-16 | Intel Corporation | Integrated circuit packages with temperature sensor traces |
US10178763B2 (en) | 2015-12-21 | 2019-01-08 | Intel Corporation | Warpage mitigation in printed circuit board assemblies |
JP6637812B2 (ja) * | 2016-03-30 | 2020-01-29 | 株式会社ケーヒン | 半導体装置 |
US10880994B2 (en) | 2016-06-02 | 2020-12-29 | Intel Corporation | Top-side connector interface for processor packaging |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09148523A (ja) * | 1995-11-21 | 1997-06-06 | Toshiba Corp | 半導体装置 |
JPH11330321A (ja) * | 1998-05-15 | 1999-11-30 | Shibaura Mechatronics Corp | 回路素子の過熱防護構造 |
JP3889562B2 (ja) * | 2000-09-04 | 2007-03-07 | 株式会社日立製作所 | 半導体装置 |
JP2006108308A (ja) * | 2004-10-04 | 2006-04-20 | Toyota Motor Corp | 半導体装置 |
-
2011
- 2011-02-01 JP JP2011019603A patent/JP5710995B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2012160602A (ja) | 2012-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6171599B2 (ja) | 半導体装置及びその制御方法 | |
JP5710995B2 (ja) | 半導体装置 | |
JP6119602B2 (ja) | 電子装置 | |
JP4985810B2 (ja) | 半導体装置 | |
JP5062005B2 (ja) | 電力半導体装置 | |
JP2014003095A (ja) | 半導体装置 | |
JP2013021254A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2011054732A (ja) | 半導体モジュール | |
JP7380062B2 (ja) | 半導体モジュール | |
JP5369868B2 (ja) | 半導体装置 | |
JP7099115B2 (ja) | 半導体装置 | |
JP2008294279A (ja) | 半導体装置 | |
JP2005259753A (ja) | 半導体装置 | |
JP3889562B2 (ja) | 半導体装置 | |
JP5549611B2 (ja) | 炭化珪素半導体装置 | |
JP7067205B2 (ja) | 半導体装置 | |
JP5777319B2 (ja) | 半導体装置 | |
JP6776605B2 (ja) | 温度センサの実装構造 | |
JP4673360B2 (ja) | 半導体装置 | |
JP2006332176A (ja) | 半導体装置 | |
JP2013113638A (ja) | 半導体装置 | |
JP6507372B2 (ja) | 電気素子と温度検知器とを備えた電子装置 | |
JP2013105932A (ja) | 半導体装置 | |
JP5304335B2 (ja) | 半導体装置 | |
JP2005268496A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131128 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141215 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141218 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150212 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150302 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150305 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5710995 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |