JP5549611B2 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 223
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 56
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 56
- 229920005989 resin Polymers 0.000 claims description 78
- 239000011347 resin Substances 0.000 claims description 78
- 239000011810 insulating material Substances 0.000 claims description 19
- 239000003507 refrigerant Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000000465 moulding Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Description
本発明の第1実施形態について説明する。図1は、本実施形態にかかるSiCにて構成された半導体パワー素子を備えたSiC半導体装置の断面図である。この図を参照して、本実施形態にかかるSiC半導体装置の詳細について説明する。
本発明の第2実施形態について説明する。本実施形態のSiC半導体装置1は、第1実施形態に対して第2半導体チップ8の配線引出構造の構成を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第3実施形態について説明する。本実施形態のSiC半導体装置1は、第1実施形態に対して第2半導体チップ8の配置場所を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第4実施形態について説明する。本実施形態のSiC半導体装置1は、第1実施形態に対して放熱構造を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
上記第1、第2実施形態では、第1、第2半導体チップ7、8のように、半導体パワー素子が形成されるチップと温度センサが形成されるチップを別チップとする場合について説明したが、これらを同じ1チップ内に形成しても良い。
2 放熱板
3 絶縁材
4 配線パターン
7 第1半導体チップ
8 第2半導体チップ
11 モールド樹脂
11a 樹脂支持台
12、13 リード
16 絶縁部材
17 放熱板
18 絶縁材
19 配線パターン
Claims (7)
- 放熱板(2)の上に絶縁材(3)を介して配線パターン(4)に実装され、半導体パワー素子が形成されてなる炭化珪素にて構成された第1半導体チップ(7)を備え、該第1半導体チップ(7)をモールド樹脂(11)にて覆った炭化珪素半導体装置において、
前記モールド樹脂(11)のうち前記第1半導体チップ(7)の周囲を囲み該第1半導体チップ(7)に隣接している当該樹脂の箇所の温度を検出する温度センサを備え、
前記温度センサと前記第1半導体チップ(7)とは電気的に分離され、かつ、前記温度センサと前記第1半導体チップ(7)との間に前記モールド樹脂(11)が挟まれることで前記温度センサと前記第1半導体チップ(7)とが離間して配置されていることを特徴とする炭化珪素半導体装置。 - 前記温度センサは、前記第1半導体チップ(7)とは別チップとされた第2半導体チップ(8)に形成され、該第2半導体チップ(8)は、前記第1半導体チップ(7)との間に前記モールド樹脂(11)を挟んだ状態で、前記第1半導体チップ(7)から所定距離離間して配置され、該第2半導体チップ(8)の一面が前記第1半導体チップ(7)の一面に対して対向配置されていることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記第2半導体チップ(8)は、前記絶縁材(3)からの高さが前記第1半導体チップ(7)と同じ高さとされていることを特徴とする請求項2に記載の炭化珪素半導体装置。
- 前記第2半導体チップ(8)は、前記絶縁材(3)上に固体状の樹脂支持台(11a)を介して配置され、この樹脂支持台(11a)にて支持された状態で前記モールド樹脂(11)による樹脂モールドが行われていることを特徴とする請求項2または3に記載の炭化珪素半導体装置。
- 前記樹脂支持台(11a)と前記モールド樹脂(11)が同一材料であることを特徴とする請求項4に記載の炭化珪素半導体装置。
- 前記第1半導体チップ(7)のうち前記絶縁材(3)とは反対側となる表面側に、絶縁部材(16)が配置され、前記第2半導体チップ(8)は、前記絶縁部材(16)を介して前記第1半導体チップ(7)の表面上に配置されていることを特徴とする請求項2に記載の炭化珪素半導体装置。
- 請求項1ないし6のいずれか1つに記載の炭化珪素半導体装置を冷媒が循環させられる冷却機構にて冷却する半導体パワー素子制御システムであって、
前記温度センサにて前記モールド樹脂(11)の温度上昇が検出されると、前記冷媒の流動量の増加もしくは前記冷媒の温度低下を行うようになっていることを特徴とする半導体パワー素子制御システム。
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JP2013062277A (ja) * | 2011-09-12 | 2013-04-04 | Toyota Motor Corp | 半導体装置とその製造方法 |
US9035322B2 (en) | 2013-03-26 | 2015-05-19 | Infineon Technologies Ag | Silicon carbide device and a method for manufacturing a silicon carbide device |
US9257511B2 (en) | 2013-03-26 | 2016-02-09 | Infineon Technologies Ag | Silicon carbide device and a method for forming a silicon carbide device |
JP6354641B2 (ja) * | 2015-04-06 | 2018-07-11 | 株式会社デンソー | 電子装置 |
JP6791189B2 (ja) * | 2018-03-30 | 2020-11-25 | 株式会社村田製作所 | 複合電子部品、定温加熱装置、および複合電子部品の製造方法 |
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JP2008171940A (ja) * | 2007-01-10 | 2008-07-24 | Advics:Kk | 負荷駆動装置 |
JP2010171169A (ja) * | 2009-01-22 | 2010-08-05 | Sanken Electric Co Ltd | 半導体モジュール及びその制御方法 |
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