JP2016503588A5 - - Google Patents

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JP2016503588A5
JP2016503588A5 JP2015544135A JP2015544135A JP2016503588A5 JP 2016503588 A5 JP2016503588 A5 JP 2016503588A5 JP 2015544135 A JP2015544135 A JP 2015544135A JP 2015544135 A JP2015544135 A JP 2015544135A JP 2016503588 A5 JP2016503588 A5 JP 2016503588A5
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chamber
substrate
fluid
supercritical fluid
supercritical
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JP6408477B2 (ja
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JP2015544135A 2012-11-26 2013-11-21 高アスペクト比半導体デバイス構造のための、汚染物質除去を伴うスティクションフリー乾燥処理 Active JP6408477B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201261729965P 2012-11-26 2012-11-26
US61/729,965 2012-11-26
US201361841779P 2013-07-01 2013-07-01
US61/841,779 2013-07-01
US14/078,373 US10354892B2 (en) 2012-11-26 2013-11-12 Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures
US14/078,373 2013-11-12
PCT/US2013/071314 WO2014081966A1 (en) 2012-11-26 2013-11-21 Stiction-free drying process with contaminant removal for high-aspect-ratio semiconductor device structures

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JP2018176500A Division JP6662977B2 (ja) 2012-11-26 2018-09-20 高アスペクト比半導体デバイス構造のための、汚染物質除去を伴うスティクションフリー乾燥処理

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JP2016503588A JP2016503588A (ja) 2016-02-04
JP2016503588A5 true JP2016503588A5 (enExample) 2017-01-26
JP6408477B2 JP6408477B2 (ja) 2018-10-17

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JP2015544135A Active JP6408477B2 (ja) 2012-11-26 2013-11-21 高アスペクト比半導体デバイス構造のための、汚染物質除去を伴うスティクションフリー乾燥処理
JP2018176500A Active JP6662977B2 (ja) 2012-11-26 2018-09-20 高アスペクト比半導体デバイス構造のための、汚染物質除去を伴うスティクションフリー乾燥処理
JP2020022247A Active JP6929981B2 (ja) 2012-11-26 2020-02-13 高アスペクト比半導体デバイス構造のための、汚染物質除去を伴うスティクションフリー乾燥処理

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JP2020022247A Active JP6929981B2 (ja) 2012-11-26 2020-02-13 高アスペクト比半導体デバイス構造のための、汚染物質除去を伴うスティクションフリー乾燥処理

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US (3) US10354892B2 (enExample)
JP (3) JP6408477B2 (enExample)
KR (3) KR102161253B1 (enExample)
CN (2) CN107799391B (enExample)
TW (3) TWI689004B (enExample)
WO (1) WO2014081966A1 (enExample)

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