JP5843277B2 - 半導体基板の超臨界乾燥方法及び装置 - Google Patents
半導体基板の超臨界乾燥方法及び装置 Download PDFInfo
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- JP5843277B2 JP5843277B2 JP2011158296A JP2011158296A JP5843277B2 JP 5843277 B2 JP5843277 B2 JP 5843277B2 JP 2011158296 A JP2011158296 A JP 2011158296A JP 2011158296 A JP2011158296 A JP 2011158296A JP 5843277 B2 JP5843277 B2 JP 5843277B2
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- 239000004065 semiconductor Substances 0.000 title claims description 64
- 239000000758 substrate Substances 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 47
- 238000000352 supercritical drying Methods 0.000 title claims description 32
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 94
- 239000001569 carbon dioxide Substances 0.000 claims description 47
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 47
- 239000012530 fluid Substances 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 34
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 23
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 15
- 229910001882 dioxygen Inorganic materials 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 4
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 125000003158 alcohol group Chemical group 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 81
- 239000007788 liquid Substances 0.000 description 17
- 239000002245 particle Substances 0.000 description 17
- 239000012071 phase Substances 0.000 description 15
- 238000001035 drying Methods 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/06—Controlling, e.g. regulating, parameters of gas supply
- F26B21/10—Temperature; Pressure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B23/00—Heating arrangements
- F26B23/02—Heating arrangements using combustion heating
- F26B23/028—Heating arrangements using combustion heating using solid fuel; burning the dried product
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B2200/00—Drying processes and machines for solid materials characterised by the specific requirements of the drying good
- F26B2200/04—Garbage
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
202、203 冷却器
204 昇圧ポンプ
205 ヒータ
206、207 バルブ
208 気液分離器
210 チャンバ
Claims (6)
- 半導体基板を、表面がアルコールで濡れた状態でチャンバ内に導入する工程と、
前記チャンバ内において前記半導体基板を二酸化炭素の超臨界流体に浸漬させ、前記半導体基板上の前記アルコールを前記超臨界流体に置換する工程と、
前記チャンバから前記超臨界流体及び前記アルコールを排出し、前記チャンバ内の圧力を下げる工程と、
前記チャンバから前記超臨界流体及び前記アルコールを排出して、前記チャンバ内の圧力を下げた後に、前記チャンバ内に酸素ガス又はオゾンガスを供給し、ベーク処理を行う工程と、
を備える半導体基板の超臨界乾燥方法。 - 前記ベーク処理を行う工程では、前記チャンバ内を、前記二酸化炭素に含まれる有機物成分の熱分解温度又は沸点以上に昇温することを特徴とする請求項1に記載の半導体基板の超臨界乾燥方法。
- 薬液を用いて前記半導体基板を洗浄し、
前記半導体基板の洗浄後に、純水を用いて前記半導体基板をリンスし、
前記純水を用いた前記半導体基板のリンス後、前記半導体基板を前記チャンバ内に導入する前に、前記アルコールを用いて前記半導体基板をリンスすることを特徴とする請求項1又は2に記載の半導体基板の超臨界乾燥方法。 - 前記半導体基板には金属膜が形成されており、
前記半導体基板上の前記薬液を前記超臨界流体に置換する工程、及び前記チャンバ内の圧力を下げる工程では、前記チャンバ内の温度を75℃以上かつ前記アルコールの臨界温度未満に維持することを特徴とする請求項1乃至3のいずれかに記載の半導体基板の超臨界乾燥方法。 - 前記金属膜は、タングステン、チタン、又は窒化チタンを含むことを特徴とする請求項4に記載の半導体基板の超臨界乾燥方法。
- 半導体基板を収容し、密閉可能なチャンバと、
前記チャンバの内部を加熱するヒータと、
前記チャンバに二酸化炭素を供給する第1配管と、
前記チャンバから二酸化炭素を排出する第2配管と、
前記チャンバに酸素ガス又はオゾンガスを供給する第3配管と、
前記チャンバの内部の前記半導体基板を前記二酸化炭素の超臨界流体に浸漬した後に前記第2配管にて前記チャンバから前記超臨界流体を排出して、前記第3配管から前記チャンバに酸素ガス又はオゾンガスを供給した後に、前記チャンバの内部が前記半導体基板上に残留する有機物成分の熱分解温度又は沸点以上になるように前記ヒータを制御する制御部と、
を備える超臨界乾燥装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011158296A JP5843277B2 (ja) | 2011-07-19 | 2011-07-19 | 半導体基板の超臨界乾燥方法及び装置 |
US13/420,870 US8771429B2 (en) | 2011-07-19 | 2012-03-15 | Supercritical drying method for semiconductor substrate and supercritical drying apparatus |
KR1020120026546A KR101367468B1 (ko) | 2011-07-19 | 2012-03-15 | 반도체 기판의 초임계 건조 방법 및 초임계 건조 장치 |
TW101108924A TWI528434B (zh) | 2011-07-19 | 2012-03-15 | 半導體基板之超臨界乾燥方法及超臨界乾燥裝置 |
US14/283,874 US9583330B2 (en) | 2011-07-19 | 2014-05-21 | Supercritical drying method for semiconductor substrate and supercritical drying apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011158296A JP5843277B2 (ja) | 2011-07-19 | 2011-07-19 | 半導体基板の超臨界乾燥方法及び装置 |
Publications (2)
Publication Number | Publication Date |
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JP2013026348A JP2013026348A (ja) | 2013-02-04 |
JP5843277B2 true JP5843277B2 (ja) | 2016-01-13 |
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JP2011158296A Active JP5843277B2 (ja) | 2011-07-19 | 2011-07-19 | 半導体基板の超臨界乾燥方法及び装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8771429B2 (ja) |
JP (1) | JP5843277B2 (ja) |
KR (1) | KR101367468B1 (ja) |
TW (1) | TWI528434B (ja) |
Families Citing this family (29)
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TWI689004B (zh) * | 2012-11-26 | 2020-03-21 | 美商應用材料股份有限公司 | 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理 |
KR102037844B1 (ko) * | 2013-03-12 | 2019-11-27 | 삼성전자주식회사 | 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법 |
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JP5607269B1 (ja) * | 2014-01-17 | 2014-10-15 | 株式会社東芝 | 基板処理方法及び装置 |
KR20160026302A (ko) | 2014-08-29 | 2016-03-09 | 삼성전자주식회사 | 기판 처리 장치 및 집적회로 소자 제조 장치와 기판 처리 방법 및 집적회로 소자 제조 방법 |
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