JP6498573B2 - 基板処理方法、基板処理装置および記憶媒体 - Google Patents
基板処理方法、基板処理装置および記憶媒体 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 24
- 238000003672 processing method Methods 0.000 title claims description 12
- 238000003860 storage Methods 0.000 title claims description 10
- 239000007788 liquid Substances 0.000 claims description 152
- 239000012530 fluid Substances 0.000 claims description 96
- 238000001035 drying Methods 0.000 claims description 50
- 239000007789 gas Substances 0.000 claims description 41
- 238000009835 boiling Methods 0.000 claims description 20
- 239000011261 inert gas Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 13
- 235000012431 wafers Nutrition 0.000 description 87
- 229910052731 fluorine Inorganic materials 0.000 description 69
- 239000011737 fluorine Substances 0.000 description 69
- 239000003960 organic solvent Substances 0.000 description 69
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 68
- 230000007246 mechanism Effects 0.000 description 12
- 229910021641 deionized water Inorganic materials 0.000 description 11
- 239000000126 substance Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- FPIPGXGPPPQFEQ-OVSJKPMPSA-N all-trans-retinol Chemical compound OC\C=C(/C)\C=C\C=C(/C)\C=C\C1=C(C)CCCC1(C)C FPIPGXGPPPQFEQ-OVSJKPMPSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 235000019169 all-trans-retinol Nutrition 0.000 description 1
- 239000011717 all-trans-retinol Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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Description
まず本発明による基板処理装置について説明する。基板処理装置の一例として、基板であるウエハW(被処理体)に各種処理液を供給して液処理を行う液処理ユニット2と、液処理後のウエハWに付着している乾燥防止用の液体が搬送され、ウエハWに対して超臨界処理を施す超臨界処理ユニット3とを備えた液処理装置1について説明する。
次にこのような構成からなる本実施の形態の作用について図1乃至図8(a)(b)を用いて説明する。
なお、上記実施の形態において、処理容器3A内に超臨界処理ユニット容器用不活性ガス供給部350からN2ガスを供給した後、超臨界処理用流体供給部414から超臨界処理用流体を処理容器3A内に供給した例を示したが、これに限らず、処理容器3A内にN2ガスと超臨界処理用流体を同時に供給してもよく、処理容器3A内に超臨界処理用流体を供給した後でN2ガスを供給してもよい、
あるいはまた、処理容器3A内に供給されるN2ガスは常圧〜1.0MPaの圧力をもっていてもよい。
1 液処理装置
2 液処理ユニット
3 超臨界処理ユニット
3A 処理容器
5 制御部
5a 記憶部
21 アウターチャンバー
121 第1の搬送機構
161 第2の搬送機構
201 処理液供給部
202 リンス液供給部
203a 第1のフッ素含有有機溶剤供給部
203b 第2のフッ素含有有機溶剤供給部
311 容器本体
322 ヒーター
350 超臨界処理ユニット容器用不活性ガス供給部
351 超臨界処理用流体供給ライン
414 超臨界処理用流体供給部
Claims (6)
- 乾燥防止用の液体で液盛りされた被処理体を超臨界処理ユニット用容器内へ搬送する工程と、
前記超臨界処理ユニット用容器内の被処理体外または被処理体上、または前記超臨界処理ユニット用容器外の被処理体上へ、前記乾燥防止用の液体より低い沸点をもつ超臨界処理用流体を供給して前記乾燥防止用の液体と前記超臨界処理用流体の混合液を生成する工程と、
前記超臨界処理ユニット用容器内の前記乾燥防止の液体と前記超臨界処理流体の混合液を加熱して超臨界状態の流体を形成する工程とを備え、
前記超臨界処理ユニット容器内の前記乾燥防止の液体と前記超臨界処理流体の混合液を加熱して超臨界状態の流体を形成する前に、予め前記超臨界処理ユニット容器内に不活性ガスを供給して、前記超臨界処理ユニット容器内を加圧することを特徴とする基板処理方法。 - 前記不活性ガスは前記超臨界処理用流体の供給より先に、前記超臨界処理ユニット容器内に供給されることを特徴とする請求項1記載の基板処理方法。
- 前記不活性ガスは前記超臨界処理用流体の供給と同時にまたはその後に、前記超臨界処理ユニット容器内に供給されることを特徴とする請求項1記載の基板処理方法。
- 前記不活性ガスは常圧〜1.0MPaの圧力で前記超臨界処理ユニット容器内に供給されることを特徴とする請求項1乃至3のいずれか記載の基板処理方法。
- 乾燥防止用の液体で液盛りされた被処理体を超臨界処理ユニット用容器内へ搬送する搬送手段と、
前記超臨界処理ユニット用容器内の被処理体外または被処理体上、または前記超臨界処理ユニット用容器外の被処理体上へ、前記乾燥防止用の液体より低い沸点をもつ超臨界処理用流体を供給して前記乾燥防止用の液体と前記超臨界処理用流体の混合液を生成する超臨界処理用流体供給部と、
前記超臨界処理ユニット用容器内の前記乾燥防止の液体と前記超臨界処理流体の混合液を加熱して超臨界状態の流体を形成する加熱部とを備え、
前記超臨界処理ユニット用容器内の前記乾燥防止の液体と前記超臨界処理流体の混合液を加熱して超臨界状態の流体を形成する前に、予め前記超臨界処理ユニット用容器内に不活性ガスを供給して、前記超臨界ユニット容器内を加圧する超臨界処理ユニット容器用不活性ガス供給部を設けたことを特徴とする基板処理装置。 - コンピュータに基板処理方法を実行させるための記憶媒体において、
前記基板処理方法は、乾燥防止用の液体で液盛りされた被処理体を超臨界処理ユニット用容器内へ搬送する工程と、
前記超臨界処理ユニット用容器内の被処理体外または被処理体上、または前記超臨界処理ユニット用容器外の被処理体上へ、前記乾燥防止用の液体により低い沸点をもつ超臨界処理用流体を供給して前記乾燥防止用の液体と前記超臨界処理用流体の混合液を生成する工程と、
前記超臨界処理ユニット用容器内の前記乾燥防止の液体と前記超臨界処理流体の混合液を加熱して超臨界状態の流体を形成する工程とを備え、
前記超臨界処理ユニット容器内の前記乾燥防止の液体と前記超臨界処理流体の混合液を加熱して超臨界状態の流体を形成する前に、予め前記超臨界処理ユニット容器内に不活性ガスを供給して、前記超臨界処理ユニット容器内を加圧することを特徴とする記憶媒体。
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TW105129019A TWI667080B (zh) | 2015-09-15 | 2016-09-08 | 基板處理方法、基板處理裝置及記錄媒體 |
US15/260,504 US20170076938A1 (en) | 2015-09-15 | 2016-09-09 | Substrate processing method, substrate processing apparatus, and storage medium |
KR1020160117041A KR102609934B1 (ko) | 2015-09-15 | 2016-09-12 | 기판 처리 방법, 기판 처리 장치 및 기억 매체 |
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JP7197396B2 (ja) * | 2019-02-06 | 2022-12-27 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP7314634B2 (ja) * | 2019-06-11 | 2023-07-26 | 東京エレクトロン株式会社 | 塗布装置及び塗布方法 |
JP7445698B2 (ja) * | 2022-04-19 | 2024-03-07 | セメス カンパニー,リミテッド | 基板処理装置及び方法 |
US11940734B2 (en) | 2022-04-21 | 2024-03-26 | Semes Co., Ltd. | Apparatus and method for treating substrate |
WO2024085000A1 (ja) * | 2022-10-20 | 2024-04-25 | 東京エレクトロン株式会社 | 流体供給システム、基板処理装置及び基板処理方法 |
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US20170076938A1 (en) | 2017-03-16 |
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TWI667080B (zh) | 2019-08-01 |
TW201718116A (zh) | 2017-06-01 |
KR20170032857A (ko) | 2017-03-23 |
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