JP2016105495A - 発光ダイオード及びそれを製造する方法 - Google Patents
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Abstract
Description
Claims (21)
- 基板と、
前記基板上に配置される第1の半導体層と、
前記第1の半導体層上に配置され、光を生成する活性層と、
前記活性層上に配置され、前記第1の半導体層と相補的な導電型を有する第2の半導体層と、
前記第2の半導体層上に配置され、前記活性層で生成された光を反射し、異なる材質を有する金属膜間の熱膨張係数の差によって発生する応力を吸収する反射パターンと、
を含む発光ダイオード。 - 前記基板は、表面よりリセスされた陥没部を有するパターン化された基板であることを特徴とする、請求項1に記載の発光ダイオード。
- 前記陥没部の形状は、半球状、三角形または台形であることを特徴とする、請求項2に記載の発光ダイオード。
- 前記陥没部の間の前記基板上に反射防止層が配置されることを特徴とする、請求項2に記載の発光ダイオード。
- 前記反射パターンは、前記第2の半導体層上に配置され、光を反射する反射金属層と、
前記反射金属層上に配置され、前記熱膨張係数の差によって発生する応力を吸収するための応力緩和層と、
前記応力緩和層上に配置され、前記反射金属層と前記応力緩和層の側面を遮蔽する導電性バリア層を含むことを特徴とする、請求項1に記載の発光ダイオード。 - 前記応力緩和層の熱膨張係数は、前記導電性バリア層の熱膨張係数以上で、前記反射金属層の熱膨張係数以下の値を有することを特徴とする、請求項5に記載の発光ダイオード。
- 前記反射金属層はAl、Al合金、AgまたはAg合金のうち、いずれか一つを含むことを特徴とする、請求項5に記載の発光ダイオード。
- 前記導電性バリア層は、W、TiW、Mo、Ti、Cr、Pt、Rh、PdまたはNiのうち、いずれか一つを含むことを特徴とする、請求項7に記載の発光ダイオード。
- 前記反射金属層はAlまたはAl合金を含み、
前記導電性バリア層は、W、TiWまたはMoのうち、いずれか一つを含み、
前記応力緩和層は、Ag、Cu、Ni、Pt、Ti、Rh、PdもしくはCrの単一層、またはCu、Ni、Pt、Ti、Rh、PdおよびAuから選択された複数の金属の複合層であることを特徴とする、請求項8に記載の発光ダイオード。 - 前記反射金属層はAlまたはAl合金を含み、
前記導電性バリア層は、Ti、Cr、Pt、Rh、PdまたはNiのうち、いずれか一つを含み、
前記応力緩和層は、AgもしくはCuの単一層、またはNi、Au、CuおよびAgから選択された複数の金属の複合層であることを特徴とする、請求項8に記載の発光ダイオード。 - 前記反射金属層はAgまたはAgの合金を含み、
前記導電性バリア層は、W、TiWまたはMoのうち、いずれか一つを含み、
前記応力緩和層は、Cu、Ni、Pt、Ti、Rh、PdもしくはCuの単一層、またはCu、Ni、Pt、Ti、Rh、Pd、CrおよびAuから選択された複数の金属の複合層であることを特徴とする、請求項8に記載の発光ダイオード。 - 前記反射金属層はAgまたはAgの合金を含み、
前記導電性バリア層は、PtまたはNiを含み、
前記応力緩和層は、Cu、Cr、Rh、Pd、TiWもしくはTiの単一層、またはNi、AuおよびCuから選択された複数の金属の複合層であることを特徴とする、請求項8に記載の発光ダイオード。 - 前記反射パターンは、前記反射金属層の下部に配置されたオーミック接合層をさらに含むことを特徴とする、請求項5に記載の発光ダイオード。
- 前記オーミック接合層は、Ni、Pt、ITOまたはZnOのうち、いずれか一つを含むことを特徴とする、請求項13に記載の発光ダイオード。
- 前記活性層及び前記第2の半導体層の側面プロファイルは、前記第1の半導体層の表面から20°以上70°以下の角度で傾斜していることを特徴とする、請求項1に記載の発光ダイオード。
- 基板上に第1の半導体層、活性層及び第2の半導体層を順次形成する段階と、
前記第2の半導体層及び前記活性層をエッチングし、第1の半導体層の表面を露出させるメサ領域を形成する段階と、
前記第2の半導体層上に形成され、前記活性層で生成された光を反射し、異なる材質を有する金属膜間の熱膨張係数の差によって発生する応力を吸収する反射パターンを形成する段階と、
を含む発光ダイオードの製造方法。 - 前記反射パターンを形成する段階は、前記メサ領域上にフォトレジストパターンを形成する段階と、
前記フォトレジストパターンによって開放された空間を介して前記第2の半導体層上に反射金属層を形成する段階と、
前記反射金属層上に熱膨張係数の差によって発生する応力を吸収する応力緩和層を形成する段階と、
前記応力緩和層の上部と側面を覆い、前記反射金属層の側面を覆う導電性バリア層を形成する段階と、
前記フォトレジストパターンを除去する段階、とを含む、請求項16に記載の発光ダイオードの製造方法。 - 前記フォトレジストパターンは、上部の幅が下部の幅より広いオーバーハング構造であることを特徴とする、請求項17に記載の発光ダイオードの製造方法。
- 前記反射金属層及び前記応力緩和層は、異方性蒸着によって形成され、
前記バリア層は、等方性蒸着によって形成されることを特徴とする、請求項17に記載の発光ダイオードの製造方法。 - 前記メサ領域は、ストライプタイプであることを特徴とする、請求項16に記載の発光ダイオードの製造方法。
- 前記メサ領域は、ホールタイプであることを特徴とする、請求項16に記載の発光ダイオードの製造方法。
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KR20110093396 | 2011-09-16 | ||
KR10-2011-0093396 | 2011-09-16 | ||
KR1020120015758A KR20130094483A (ko) | 2012-02-16 | 2012-02-16 | 발광 다이오드 칩 및 그의 제조 방법 |
KR10-2012-0015758 | 2012-02-16 | ||
KR1020120052722A KR20130128747A (ko) | 2012-05-17 | 2012-05-17 | 응력 완화층을 가지는 발광 다이오드 및 그 형성방법 |
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EP (7) | EP3926698B1 (ja) |
JP (3) | JP5869678B2 (ja) |
CN (5) | CN103828073B (ja) |
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US9936579B2 (en) * | 2013-02-01 | 2018-04-03 | Apple Inc. | Low profile packaging and assembly of a power conversion system in modular form |
KR20140130618A (ko) * | 2013-05-01 | 2014-11-11 | 서울바이오시스 주식회사 | 솔더 페이스트를 통해 접착된 발광 다이오드를 갖는 발광 다이오드 모듈 및 발광 다이오드 |
WO2014185693A1 (ko) | 2013-05-13 | 2014-11-20 | 서울반도체 주식회사 | 발광소자 패키지, 그 제조 방법, 및 이를 포함하는 차량용 램프 및 백라이트 유닛 |
WO2015016561A1 (en) * | 2013-07-29 | 2015-02-05 | Seoul Viosys Co., Ltd. | Light emitting diode, method of fabricating the same and led module having the same |
US9847457B2 (en) | 2013-07-29 | 2017-12-19 | Seoul Viosys Co., Ltd. | Light emitting diode, method of fabricating the same and LED module having the same |
US10283681B2 (en) * | 2013-09-12 | 2019-05-07 | Cree, Inc. | Phosphor-converted light emitting device |
KR101561198B1 (ko) * | 2013-11-12 | 2015-10-19 | 주식회사 세미콘라이트 | 반도체 발광소자 |
CN103618035A (zh) * | 2013-11-14 | 2014-03-05 | 南昌黄绿照明有限公司 | 一种具有应力调制层的氮化镓基led薄膜芯片及其制备方法 |
JP6248604B2 (ja) * | 2013-12-18 | 2017-12-20 | 日亜化学工業株式会社 | 半導体発光素子及びその電極形成方法 |
DE102014102029A1 (de) * | 2014-02-18 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement |
JP6299336B2 (ja) * | 2014-03-28 | 2018-03-28 | 日亜化学工業株式会社 | 発光素子及びそれを用いた発光装置 |
US9548419B2 (en) | 2014-05-20 | 2017-01-17 | Southern Taiwan University Of Science And Technology | Light emitting diode chip having multi microstructure substrate surface |
JP6764791B2 (ja) | 2014-05-30 | 2020-10-07 | ルミレッズ ホールディング ベーフェー | パターン付けされた基板を有する発光デバイス |
KR20150138977A (ko) * | 2014-05-30 | 2015-12-11 | 한국전자통신연구원 | 발광 소자 및 그의 제조방법 |
US9608168B2 (en) * | 2014-06-13 | 2017-03-28 | Seoul Viosys Co., Ltd. | Light emitting diode |
KR102357289B1 (ko) * | 2014-07-01 | 2022-02-03 | 서울바이오시스 주식회사 | 발광 소자 |
JP6760921B2 (ja) * | 2014-07-31 | 2020-09-23 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオード |
KR20160017849A (ko) * | 2014-08-06 | 2016-02-17 | 서울바이오시스 주식회사 | 고출력 발광 장치 및 그 제조 방법 |
KR20160027875A (ko) | 2014-08-28 | 2016-03-10 | 서울바이오시스 주식회사 | 발광소자 |
US20160181476A1 (en) * | 2014-12-17 | 2016-06-23 | Apple Inc. | Micro led with dielectric side mirror |
WO2016099061A1 (en) * | 2014-12-19 | 2016-06-23 | Seoul Viosys Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
KR102647674B1 (ko) * | 2014-12-31 | 2024-03-15 | 서울바이오시스 주식회사 | 고효율 발광 다이오드 |
TWI620349B (zh) * | 2015-01-05 | 2018-04-01 | 隆達電子股份有限公司 | 覆晶式發光二極體晶片 |
US10297722B2 (en) | 2015-01-30 | 2019-05-21 | Apple Inc. | Micro-light emitting diode with metal side mirror |
US20180130926A1 (en) * | 2015-02-17 | 2018-05-10 | Genesis Photonics Inc. | Light emitting diode |
US20160329461A1 (en) | 2015-02-17 | 2016-11-10 | Genesis Photonics Inc. | Light emitting diode |
FR3038127B1 (fr) * | 2015-06-24 | 2017-06-23 | Commissariat Energie Atomique | Procede de fabrication d'une pluralite de dipoles en forme d'ilots ayant des electrodes auto-alignees |
CN104934514B (zh) * | 2015-07-06 | 2018-06-22 | 天津宝坻紫荆科技有限公司 | 一种复合绝缘层及制备方法 |
DE102015114590B4 (de) * | 2015-09-01 | 2020-01-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauteils |
CN105261691B (zh) * | 2015-09-08 | 2018-02-13 | 圆融光电科技股份有限公司 | 发光二极管倒装芯片的制备方法及发光二极管倒装芯片 |
EP4235823A3 (en) * | 2015-10-16 | 2023-10-25 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip |
US9851056B2 (en) | 2015-10-16 | 2017-12-26 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip and light emitting device having a slim structure with secured durability |
CN105633224A (zh) * | 2016-01-04 | 2016-06-01 | 厦门市三安光电科技有限公司 | 一种led芯片电极与芯片结构及其制作方法 |
KR102624111B1 (ko) * | 2016-01-13 | 2024-01-12 | 서울바이오시스 주식회사 | 자외선 발광소자 |
CN113948621A (zh) * | 2016-01-13 | 2022-01-18 | 首尔伟傲世有限公司 | 发光元件 |
JP6601243B2 (ja) * | 2016-01-29 | 2019-11-06 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
WO2017135763A1 (ko) | 2016-02-05 | 2017-08-10 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 발광소자 패키지 |
KR102266960B1 (ko) * | 2016-03-02 | 2021-06-18 | 한국전자통신연구원 | 쇼트키 다이오드 및 이의 제조 방법 |
DE102016106831A1 (de) * | 2016-04-13 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
CN111128987A (zh) * | 2016-05-03 | 2020-05-08 | 首尔伟傲世有限公司 | 发光二极管 |
KR102550005B1 (ko) * | 2016-07-15 | 2023-07-03 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 |
TWI783385B (zh) * | 2016-08-18 | 2022-11-11 | 新世紀光電股份有限公司 | 微型發光二極體及其製造方法 |
TWI742175B (zh) * | 2016-10-07 | 2021-10-11 | 新世紀光電股份有限公司 | 發光二極體 |
US10340425B2 (en) * | 2016-11-25 | 2019-07-02 | Seoul Viosys Co., Ltd. | Light emitting diode having light blocking layer |
KR102550007B1 (ko) * | 2016-11-30 | 2023-07-03 | 서울바이오시스 주식회사 | 복수의 발광셀들을 가지는 발광 다이오드 |
KR20180065342A (ko) * | 2016-12-07 | 2018-06-18 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 디스플레이 장치 |
CN114388674A (zh) * | 2016-12-21 | 2022-04-22 | 首尔伟傲世有限公司 | 高可靠性发光二极管 |
KR102601419B1 (ko) * | 2016-12-28 | 2023-11-14 | 서울바이오시스 주식회사 | 고 신뢰성 발광 다이오드 |
KR20180081371A (ko) * | 2017-01-06 | 2018-07-16 | 서울바이오시스 주식회사 | 전류 차단층을 가지는 발광 소자 |
DE112018001504T5 (de) * | 2017-03-23 | 2020-03-12 | Seoul Semiconductor Co., Ltd. | Bildschirmgerät und verfahren zur herstellung desselben |
JP2018170333A (ja) * | 2017-03-29 | 2018-11-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
US10686158B2 (en) * | 2017-03-31 | 2020-06-16 | Innolux Corporation | Display device |
CN108735868B (zh) * | 2017-04-25 | 2019-10-25 | 山东浪潮华光光电子股份有限公司 | 一种GaN基LED包覆式电极结构的制作方法 |
KR102381866B1 (ko) * | 2017-05-02 | 2022-04-04 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 |
DE102017111123A1 (de) * | 2017-05-22 | 2018-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
EP3723134B1 (en) * | 2017-06-30 | 2021-09-22 | Nichia Corporation | Light emitting device and method of manufacturing the same |
US10553759B2 (en) * | 2017-07-13 | 2020-02-04 | Epistar Corporation | Light-emitting device |
CN107359223B (zh) * | 2017-07-17 | 2019-02-05 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
CN109326700B (zh) * | 2017-07-31 | 2020-02-11 | 山东浪潮华光光电子股份有限公司 | 一种GaN基LED电极结构及其制作方法 |
KR102499308B1 (ko) * | 2017-08-11 | 2023-02-14 | 서울바이오시스 주식회사 | 발광 다이오드 |
JP7255965B2 (ja) | 2017-08-24 | 2023-04-11 | 日機装株式会社 | 半導体発光素子の製造方法 |
US10707374B2 (en) | 2017-09-15 | 2020-07-07 | Glo Ab | Etendue enhancement for light emitting diode subpixels |
JP2019106406A (ja) * | 2017-12-08 | 2019-06-27 | Dowaエレクトロニクス株式会社 | 半導体発光素子およびそれを用いた表面実装デバイスならびにそれらの製造方法 |
TWD191816S (zh) | 2017-12-12 | 2018-07-21 | 新世紀光電股份有限公司 | 發光二極體晶片 |
EP4297105A3 (en) * | 2017-12-22 | 2024-04-24 | Seoul Viosys Co., Ltd. | Chip scale package light emitting diode |
DE102018101393A1 (de) * | 2018-01-23 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
WO2019205328A1 (zh) * | 2018-04-26 | 2019-10-31 | 厦门乾照光电股份有限公司 | 发光二极管的倒装芯片及其制造方法和发光方法 |
KR102565148B1 (ko) * | 2018-06-27 | 2023-08-18 | 서울바이오시스 주식회사 | 플립칩형 발광 다이오드 칩 및 그것을 포함하는 발광 장치 |
US11430929B2 (en) * | 2018-09-14 | 2022-08-30 | Seoul Viosys Co., Ltd. | Light emitting device having a stacked structure |
US10886447B2 (en) * | 2018-09-14 | 2021-01-05 | Seoul Viosys Co., Ltd. | Light emitting device |
US11271136B2 (en) * | 2018-11-07 | 2022-03-08 | Seoul Viosys Co., Ltd | Light emitting device |
CN109659414B (zh) * | 2018-11-22 | 2021-06-11 | 华灿光电(浙江)有限公司 | 一种倒装led芯片及其制作方法 |
US11271141B2 (en) * | 2018-11-26 | 2022-03-08 | Osram Opto Semiconductors Gmbh | Light-emitting device with wavelenght conversion layer having quantum dots |
CN111463329B (zh) * | 2019-01-18 | 2021-09-17 | 北京北方华创微电子装备有限公司 | 一种led芯片及其制作方法 |
WO2020159068A1 (ko) * | 2019-01-31 | 2020-08-06 | 서울바이오시스주식회사 | 발광 다이오드 |
KR20200103925A (ko) * | 2019-02-25 | 2020-09-03 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN114583033A (zh) * | 2019-04-08 | 2022-06-03 | 厦门三安光电有限公司 | 一种发光二极管 |
TWI699903B (zh) * | 2019-05-17 | 2020-07-21 | 友達光電股份有限公司 | 顯示面板及其製造方法 |
DE102019122460A1 (de) * | 2019-08-21 | 2021-02-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer halbleiterchip und verfahren zur herstellung eines solchen |
DE102019122593A1 (de) * | 2019-08-22 | 2021-02-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
US11848402B2 (en) * | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
KR20230005368A (ko) * | 2020-05-19 | 2023-01-09 | 구글 엘엘씨 | 측벽 정공 주입으로 강화된 양자 우물-기반 led 구조체 |
GB2599065B (en) * | 2020-05-22 | 2023-05-10 | Plessey Semiconductors Ltd | Light emitting device array |
CN111596339B (zh) * | 2020-05-29 | 2023-07-25 | 东华理工大学 | 一种半导体核辐射探测器及其制备方法和应用 |
CN111933765B (zh) * | 2020-07-03 | 2022-04-26 | 厦门士兰明镓化合物半导体有限公司 | 微型发光二极管及制作方法,微型led显示模块及制作方法 |
CN111883624B (zh) * | 2020-07-20 | 2021-11-05 | 华灿光电(苏州)有限公司 | 发光二极管芯片及其制备方法 |
US20230317763A1 (en) * | 2020-08-07 | 2023-10-05 | Seoul Viosys Co., Ltd. | Light emitting diode having plurality of light emitting cells |
CN112242467A (zh) * | 2020-10-20 | 2021-01-19 | 厦门乾照光电股份有限公司 | 一种led芯片的制作方法 |
WO2022158679A1 (ko) * | 2021-01-21 | 2022-07-28 | 주식회사 포톤웨이브 | 자외선 발광소자 |
KR20220157120A (ko) * | 2021-05-20 | 2022-11-29 | 삼성전자주식회사 | 발광 소자 및 이를 이용한 디스플레이 모듈 |
CN113540311B (zh) * | 2021-07-15 | 2022-11-22 | 厦门三安光电有限公司 | 一种倒装发光二极管和发光装置 |
CN114038878B (zh) * | 2021-08-17 | 2023-01-13 | 重庆康佳光电技术研究院有限公司 | 发光组件、显示屏及发光组件的制作方法 |
DE102021209250A1 (de) | 2021-08-24 | 2023-03-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Schichtenstapel für einen Halbleiterchip, Halbleiterchip und Verfahren zur Herstellung eines Schichtenstapels für einen Halbleiterchip |
CN113809210B (zh) * | 2021-09-14 | 2024-01-09 | 泉州三安半导体科技有限公司 | 一种发光二极管芯片、发光装置、显示装置 |
CN113964249A (zh) * | 2021-09-15 | 2022-01-21 | 厦门士兰明镓化合物半导体有限公司 | 发光二极管及其制造方法 |
CN114188454B (zh) * | 2021-12-03 | 2024-01-09 | 泉州三安半导体科技有限公司 | 紫外发光二极管及发光装置 |
WO2023136991A1 (en) * | 2022-01-13 | 2023-07-20 | Nanosys, Inc. | Light emitting diodes and method of making thereof by selectively growing active layers from trench separated areas |
CN115579441B (zh) * | 2022-12-09 | 2023-05-16 | 华灿光电(苏州)有限公司 | 一种发光二极管用电极及其制备方法 |
CN116936711B (zh) * | 2023-09-19 | 2023-12-15 | 江西兆驰半导体有限公司 | 一种垂直发光二极管及其制备方法、led灯板 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03250733A (ja) * | 1990-02-28 | 1991-11-08 | Sony Corp | 半導体装置 |
JPH11354541A (ja) * | 1998-06-11 | 1999-12-24 | Fujitsu Quantum Devices Kk | 半導体装置およびその製造方法 |
JP2001203386A (ja) * | 1999-12-22 | 2001-07-27 | Lumileds Lighting Us Llc | 光生成能力を高めたiii−窒化物発光デバイス |
JP2007027540A (ja) * | 2005-07-20 | 2007-02-01 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびこれを用いた照明装置 |
JP2007527123A (ja) * | 2004-03-05 | 2007-09-20 | ゲルコアー リミテッド ライアビリティ カンパニー | サブマウントを置かないフリップチップ発光ダイオード素子 |
JP2008305874A (ja) * | 2007-06-06 | 2008-12-18 | Sony Corp | 発光素子における電極構造の形成方法、及び、積層構造体の形成方法 |
JP2010171382A (ja) * | 2008-12-26 | 2010-08-05 | Sharp Corp | 窒化物半導体発光素子 |
WO2010132139A1 (en) * | 2009-05-11 | 2010-11-18 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
JPH11220171A (ja) * | 1998-02-02 | 1999-08-10 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体素子 |
US6828596B2 (en) | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
KR20050095721A (ko) * | 2004-03-27 | 2005-09-30 | 삼성전자주식회사 | III - V 족 GaN 계 화합물 반도체 발광소자 및 그제조방법 |
KR100568297B1 (ko) * | 2004-03-30 | 2006-04-05 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 그 제조 방법 |
JP4632697B2 (ja) * | 2004-06-18 | 2011-02-16 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
US20060001035A1 (en) * | 2004-06-22 | 2006-01-05 | Toyoda Gosei Co., Ltd. | Light emitting element and method of making same |
US7274040B2 (en) * | 2004-10-06 | 2007-09-25 | Philips Lumileds Lighting Company, Llc | Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
US8318519B2 (en) * | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
KR20060134490A (ko) * | 2005-06-22 | 2006-12-28 | 김성진 | 플립 칩 질화물반도체 발광 다이오드 및 그의 제조 방법 |
JP4819453B2 (ja) | 2005-09-12 | 2011-11-24 | 昭和電工株式会社 | 窒化ガリウム系半導体発光素子およびその製造方法 |
SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
US8022419B2 (en) * | 2005-12-19 | 2011-09-20 | Showa Denko K.K. | Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting diode lamp |
JP2007184411A (ja) * | 2006-01-06 | 2007-07-19 | Sony Corp | 発光ダイオードおよびその製造方法ならびに集積型発光ダイオードおよびその製造方法ならびに発光ダイオードバックライトならびに発光ダイオード照明装置ならびに発光ダイオードディスプレイならびに電子機器ならびに電子装置およびその製造方法 |
JP4861437B2 (ja) * | 2006-01-09 | 2012-01-25 | ソウル オプト デバイス カンパニー リミテッド | Ito層を有する発光ダイオード及びその製造方法 |
JP2008192782A (ja) * | 2007-02-05 | 2008-08-21 | Toyota Central R&D Labs Inc | 電極及びそれを有するiii族窒化物系化合物半導体発光素子 |
DE102007019776A1 (de) * | 2007-04-26 | 2008-10-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente |
KR100838197B1 (ko) | 2007-08-10 | 2008-06-16 | 서울옵토디바이스주식회사 | 개선된 전류분산 성능을 갖는 발광 다이오드 |
US8536584B2 (en) * | 2007-11-14 | 2013-09-17 | Cree, Inc. | High voltage wire bond free LEDS |
TWI464921B (zh) * | 2009-02-25 | 2014-12-11 | Epistar Corp | 主波長分佈收斂之發光元件及其製造方法 |
US9117944B2 (en) * | 2008-09-24 | 2015-08-25 | Koninklijke Philips N.V. | Semiconductor light emitting devices grown on composite substrates |
KR101017394B1 (ko) * | 2008-09-30 | 2011-02-28 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
JP5123269B2 (ja) * | 2008-09-30 | 2013-01-23 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
JP5530087B2 (ja) * | 2008-10-17 | 2014-06-25 | ユー・ディー・シー アイルランド リミテッド | 発光素子 |
CN101740674B (zh) * | 2008-11-26 | 2011-08-31 | 晶元光电股份有限公司 | 发光元件结构及其制造方法 |
JP4702442B2 (ja) * | 2008-12-12 | 2011-06-15 | ソニー株式会社 | 半導体発光素子及びその製造方法 |
KR20100076083A (ko) * | 2008-12-17 | 2010-07-06 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
CN102130286B (zh) * | 2009-02-19 | 2013-03-20 | 光宝电子(广州)有限公司 | 发光二极管的封装结构及封装方法 |
US7977132B2 (en) * | 2009-05-06 | 2011-07-12 | Koninklijke Philips Electronics N.V. | Extension of contact pads to the die edge via electrical isolation |
CN101924116B (zh) * | 2009-06-12 | 2014-04-23 | 刘胜 | 可扩展的超大尺寸发光二极管芯片及制造方法 |
CN102054911B (zh) * | 2009-10-29 | 2013-03-13 | 比亚迪股份有限公司 | 发光二极管芯片及其制作方法和具有该芯片的发光二极管 |
KR101106151B1 (ko) * | 2009-12-31 | 2012-01-20 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
KR100999779B1 (ko) * | 2010-02-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
JP5148647B2 (ja) | 2010-03-05 | 2013-02-20 | 株式会社東芝 | 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法 |
CN101872824A (zh) * | 2010-06-07 | 2010-10-27 | 厦门市三安光电科技有限公司 | 侧面具有双反射层的氮化镓基倒装发光二极管及其制备方法 |
EP2650933B1 (en) * | 2010-12-08 | 2020-06-17 | Nichia Corporation | Nitride semiconductor light-emitting element |
US10074778B2 (en) * | 2011-03-22 | 2018-09-11 | Seoul Viosys Co., Ltd. | Light emitting diode package and method for manufacturing the same |
KR20130035658A (ko) * | 2011-09-30 | 2013-04-09 | 서울옵토디바이스주식회사 | 발광 다이오드 소자용 기판 제조 방법 |
TW201347141A (zh) * | 2012-05-04 | 2013-11-16 | Chi Mei Lighting Tech Corp | 發光二極體結構及其製造方法 |
US10290773B2 (en) * | 2012-09-13 | 2019-05-14 | Epistar Corporation | Light-emitting device |
-
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03250733A (ja) * | 1990-02-28 | 1991-11-08 | Sony Corp | 半導体装置 |
JPH11354541A (ja) * | 1998-06-11 | 1999-12-24 | Fujitsu Quantum Devices Kk | 半導体装置およびその製造方法 |
JP2001203386A (ja) * | 1999-12-22 | 2001-07-27 | Lumileds Lighting Us Llc | 光生成能力を高めたiii−窒化物発光デバイス |
JP2007527123A (ja) * | 2004-03-05 | 2007-09-20 | ゲルコアー リミテッド ライアビリティ カンパニー | サブマウントを置かないフリップチップ発光ダイオード素子 |
JP2007027540A (ja) * | 2005-07-20 | 2007-02-01 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびこれを用いた照明装置 |
JP2008305874A (ja) * | 2007-06-06 | 2008-12-18 | Sony Corp | 発光素子における電極構造の形成方法、及び、積層構造体の形成方法 |
JP2010171382A (ja) * | 2008-12-26 | 2010-08-05 | Sharp Corp | 窒化物半導体発光素子 |
WO2010132139A1 (en) * | 2009-05-11 | 2010-11-18 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
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