JP6760921B2 - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
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- JP6760921B2 JP6760921B2 JP2017504022A JP2017504022A JP6760921B2 JP 6760921 B2 JP6760921 B2 JP 6760921B2 JP 2017504022 A JP2017504022 A JP 2017504022A JP 2017504022 A JP2017504022 A JP 2017504022A JP 6760921 B2 JP6760921 B2 JP 6760921B2
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- light emitting
- electrode
- emitting diode
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- 239000004065 semiconductor Substances 0.000 claims description 186
- 239000000758 substrate Substances 0.000 claims description 87
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 366
- 239000006185 dispersion Substances 0.000 description 61
- 238000009826 distribution Methods 0.000 description 22
- 230000001976 improved effect Effects 0.000 description 21
- 229910052719 titanium Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
Claims (21)
- 基板と、
前記基板上に位置し、下部半導体層、前記下部半導体層の一領域上に配置された第1上部半導体層、及び前記下部半導体層と前記第1上部半導体層との間に配置された活性層を含む発光セルと、
前記第1上部半導体層上に配置された第1電極と、
前記下部半導体層および前記第1上部半導体層とは異なる領域に配置された第2上部半導体層上に配置された第2電極と、
前記第1電極の一部を露出させる第1開放領域を含む第1絶縁層と、
前記第1絶縁層上に配置された第2絶縁層と、
前記第1開放領域を介して前記第1電極とオーミック接触する第1バンプと、を含み、
前記第1バンプは、上面に第1凹部及び第1凸部を含み、
前記第1バンプは、前記上面に前記第1凹部の底面を含む第1領域と、前記上面に前記第1凸部の上面を含む第2領域と、を含み、
前記第1領域の少なくとも一部の領域は前記第1開放領域上に配置され、前記第2領域の少なくとも一部は前記第2絶縁層上に配置され、
前記第2電極は、前記第1上部半導体層の周囲を取り囲み、
前記第2電極は、前記第1上部半導体層から離隔して配置され、
前記第2電極は、前記第2上部半導体層の側面を覆いつつ、前記下部半導体層と接するまで広がる、発光ダイオード。 - 前記第2電極と前記第2上部半導体層との接触抵抗は、前記第2電極と前記下部半導体層との接触抵抗より大きい、請求項1に記載の発光ダイオード。
- 前記第1上部半導体層と、前記第2電極との間に配置された前記下部半導体層の表面は、凹凸を有する、請求項1に記載の発光ダイオード。
- 前記第1凹部の底面の面積は、前記第1開放領域を介して露出した前記第1電極の面積に比例する、請求項1に記載の発光ダイオード。
- 前記第1凹部の深さは、前記第1電極上に配置された前記第1絶縁層及び前記第2絶縁層の厚さに比例する、請求項1に記載の発光ダイオード。
- 前記第1凸部の上面の面積と前記第1凹部の底面の面積との和は、少なくとも前記第1開放領域を介して露出した前記第1電極の面積より大きい、請求項1に記載の発光ダイオード。
- 前記第1電極と前記第1バンプとの間に前記第1絶縁層及び前記第2絶縁層の一部が配置された、請求項1に記載の発光ダイオード。
- 前記第1開放領域を取り囲む前記第1絶縁層及び前記第2絶縁層の側面と、第1バンプの下端側面の少なくとも一部とは、当接している、請求項1に記載の発光ダイオード。
- 前記第1凸部は前記第1凹部を取り囲む、請求項1に記載の発光ダイオード。
- 前記第1絶縁層は、前記第2電極の一部を露出させる第2開放領域を含み、前記第2開放領域を介して前記第2電極とオーミック接触する第2バンプをさらに含み、
前記第2バンプは、前記上面に第2凹部及び第2凸部を含み、
前記第2バンプは、前記上面に前記第2凹部の底面を含む第3領域と、上面に前記第2凸部の上面を含む第4領域と、を含み、
前記第3領域の少なくとも一部の領域は前記第2開放領域上に配置され、前記第4領域の少なくとも一部は第2絶縁層上に配置される、請求項1に記載の発光ダイオード。 - 前記第2凹部の底面の面積は、前記第2開放領域を介して露出した前記第2電極の面積に比例する、請求項10に記載の発光ダイオード。
- 前記第2凹部の深さは、前記第2電極上に配置された前記第1絶縁層及び前記第2絶縁層の厚さに比例する、請求項10に記載の発光ダイオード。
- 前記第2凸部の上面の面積と前記第2凹部の底面の面積との和は、少なくとも前記第2開放領域を介して露出した前記第2電極の面積より大きい、請求項10に記載の発光ダイオード。
- 前記第2電極と前記第2バンプとの間に前記第1絶縁層及び前記第2絶縁層の一部が配置された、請求項10に記載の発光ダイオード。
- 前記第2開放領域を取り囲む前記第1絶縁層及び前記第2絶縁層の側面と、第2バンプの下端の側面の少なくとも一部とは、当接している、請求項10に記載の発光ダイオード。
- 前記第2凸部は前記第2凹部を取り囲む、請求項10に記載の発光ダイオード。
- 前記第2絶縁層はシリコン窒化物層を含む、請求項1に記載の発光ダイオード。
- 前記発光セルは紫外線波長領域の光を放出する、請求項1に記載の発光ダイオード。
- 前記基板は、前記発光セルが配置された一面と、前記一面の反対側である他面と、を含み、
前記他面は凹凸部を含む、請求項1に記載の発光ダイオード。 - 前記基板は透明サファイア基板である、請求項1に記載の発光ダイオード。
- 前記第1絶縁層は分布ブラッグ反射器を含む、請求項1に記載の発光ダイオード。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140098641A KR102256590B1 (ko) | 2014-07-31 | 2014-07-31 | 발광 다이오드 |
KR10-2014-0098641 | 2014-07-31 | ||
KR10-2014-0131604 | 2014-09-30 | ||
KR1020140131604A KR102288376B1 (ko) | 2014-09-30 | 2014-09-30 | 발광 다이오드 |
PCT/KR2015/008010 WO2016018109A1 (ko) | 2014-07-31 | 2015-07-30 | 발광 다이오드 |
Publications (2)
Publication Number | Publication Date |
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JP2017523613A JP2017523613A (ja) | 2017-08-17 |
JP6760921B2 true JP6760921B2 (ja) | 2020-09-23 |
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Application Number | Title | Priority Date | Filing Date |
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JP2017504022A Active JP6760921B2 (ja) | 2014-07-31 | 2015-07-30 | 発光ダイオード |
Country Status (4)
Country | Link |
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US (2) | US9812616B2 (ja) |
JP (1) | JP6760921B2 (ja) |
CN (2) | CN110676367B (ja) |
WO (1) | WO2016018109A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110676367B (zh) * | 2014-07-31 | 2023-03-24 | 首尔伟傲世有限公司 | 发光二极管 |
EP3561870A4 (en) * | 2016-12-23 | 2020-11-25 | Lumens Co., Ltd. | MICRO-LED MODULE AND ITS MANUFACTURING PROCESS |
KR102410809B1 (ko) * | 2017-08-25 | 2022-06-20 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
US11145598B2 (en) * | 2017-12-28 | 2021-10-12 | Texas Instruments Incorporated | Lattice bump interconnect |
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