US349646A
(en)
*
|
|
1886-09-21 |
|
Block |
US2019653A
(en)
*
|
1932-06-14 |
1935-11-05 |
Clarence R Buyer |
Building block
|
USD243855S
(en)
*
|
1974-10-07 |
1977-03-29 |
Paul Thomas Hynes |
Building brick
|
EP0675552B1
(en)
|
1994-03-22 |
2001-08-08 |
Toyoda Gosei Co., Ltd. |
Light emitting semiconductor device using group III nitrogen compound
|
USD468839S1
(en)
*
|
2000-06-27 |
2003-01-14 |
Springair 2000 Limited |
Set of bricks
|
US6977953B2
(en)
|
2001-07-27 |
2005-12-20 |
Sanyo Electric Co., Ltd. |
Nitride-based semiconductor light-emitting device and method of fabricating the same
|
JP2003110139A
(ja)
|
2001-09-28 |
2003-04-11 |
Sanyo Electric Co Ltd |
窒化物系半導体発光素子
|
TWM255518U
(en)
|
2004-04-23 |
2005-01-11 |
Super Nova Optoelectronics Cor |
Vertical electrode structure of Gallium Nitride based LED
|
JP2006324587A
(ja)
*
|
2005-05-20 |
2006-11-30 |
Toshiba Corp |
半導体発光素子
|
USD531140S1
(en)
*
|
2005-11-14 |
2006-10-31 |
Kabushiki Kaisha Toshiba |
Light emitting semiconductor device
|
US7932806B2
(en)
*
|
2007-03-30 |
2011-04-26 |
Tdk Corporation |
Varistor and light emitting device
|
US8399895B2
(en)
|
2008-01-11 |
2013-03-19 |
Rohm Co., Ltd. |
Semiconductor light emitting device
|
USD610100S1
(en)
*
|
2008-05-21 |
2010-02-16 |
Hon Hai Precision Industry Co., Ltd. |
Coaxial light source
|
TWI373153B
(en)
|
2008-09-22 |
2012-09-21 |
Ind Tech Res Inst |
Light emitting diode, and package structure and manufacturing method therefor
|
TWI473292B
(zh)
|
2008-12-15 |
2015-02-11 |
Lextar Electronics Corp |
發光二極體晶片
|
US7939847B2
(en)
|
2009-03-31 |
2011-05-10 |
Hong Kong Applied Science And Technology Research Institute Co. Ltd. |
Quasi-vertical light emitting diode
|
US20110089447A1
(en)
|
2009-10-19 |
2011-04-21 |
Wu-Cheng Kuo |
Light-emiting device chip with micro-lenses and method for fabricating the same
|
US9161448B2
(en)
|
2010-03-29 |
2015-10-13 |
Semprius, Inc. |
Laser assisted transfer welding process
|
KR101110937B1
(ko)
|
2010-05-17 |
2012-03-05 |
엘지이노텍 주식회사 |
질화물 반도체 발광소자
|
DE202011111091U1
(de)
|
2010-11-18 |
2019-08-07 |
Seoul Viosys Co., Ltd. |
Lichtemittierender Diodenchip mit Elektrodenfeld
|
KR101300781B1
(ko)
|
2011-01-04 |
2013-08-29 |
갤럭시아포토닉스 주식회사 |
개구부가 형성된 전류 분산층을 갖는 발광 다이오드 및 발광 다이오드 패키지
|
USD654032S1
(en)
*
|
2011-01-07 |
2012-02-14 |
Silitek Electronic (Guangzhou) Co., Ltd. |
Package of a light emitting diode
|
JP5754173B2
(ja)
|
2011-03-01 |
2015-07-29 |
ソニー株式会社 |
発光ユニットおよび表示装置
|
TW201238043A
(en)
|
2011-03-11 |
2012-09-16 |
Chi Mei Lighting Tech Corp |
Light-emitting diode device and method for manufacturing the same
|
CN106058000B
(zh)
|
2011-09-16 |
2019-04-23 |
首尔伟傲世有限公司 |
发光二极管及制造该发光二极管的方法
|
TW201407747A
(zh)
|
2012-08-03 |
2014-02-16 |
Chi Mei Lighting Tech Corp |
發光二極體結構及其製造方法
|
US9293662B2
(en)
|
2012-05-21 |
2016-03-22 |
De L Associates Inc. |
Light emitting device comprising chip-on-board package substrate and method for manufacturing
|
TW201401558A
(zh)
|
2012-06-28 |
2014-01-01 |
Lextar Electronics Corp |
發光二極體結構及其製作方法
|
KR101493321B1
(ko)
|
2012-11-23 |
2015-02-13 |
일진엘이디(주) |
전류 분산 효과가 우수한 발광소자 및 그 제조 방법
|
KR102086365B1
(ko)
|
2013-04-19 |
2020-03-09 |
삼성전자주식회사 |
반도체 발광소자
|
JP2015092529A
(ja)
|
2013-10-01 |
2015-05-14 |
ソニー株式会社 |
発光装置、発光ユニット、表示装置、電子機器、および発光素子
|
TWI478387B
(zh)
|
2013-10-23 |
2015-03-21 |
Lextar Electronics Corp |
發光二極體結構
|
CN104600166A
(zh)
|
2013-10-31 |
2015-05-06 |
无锡华润华晶微电子有限公司 |
一种发光二极管芯片结构及其制备方法
|
US9159871B2
(en)
|
2014-01-13 |
2015-10-13 |
Epistar Corporation |
Light-emitting device having a reflective structure and a metal mesa and the manufacturing method thereof
|
US9520697B2
(en)
|
2014-02-10 |
2016-12-13 |
Soraa Laser Diode, Inc. |
Manufacturable multi-emitter laser diode
|
US20160111618A1
(en)
|
2014-05-07 |
2016-04-21 |
Sensor Electronic Technology, Inc. |
Optoelectronic device including improved thermal management
|
TWD175298S
(zh)
|
2014-06-17 |
2016-05-01 |
晶元光電股份有限公司 |
發光二極體之部分
|
USD750579S1
(en)
*
|
2014-09-30 |
2016-03-01 |
Lite-On Opto Technology (Changzhou) Co., Ltd. |
Light emitting diode
|
USD757664S1
(en)
*
|
2014-09-30 |
2016-05-31 |
Lite-On Opto Technology (Changzhou) Co., Ltd. |
Light emitting diode
|
USD750578S1
(en)
*
|
2014-09-30 |
2016-03-01 |
Lite-On Opto Technology (Changzhou) Co., Ltd. |
Light emitting diode
|
USD757665S1
(en)
*
|
2014-09-30 |
2016-05-31 |
Lite-On Opto Technology (Changzhou) Co., Ltd. |
Light emitting diode
|
KR102256632B1
(ko)
|
2015-01-21 |
2021-05-26 |
엘지이노텍 주식회사 |
발광 소자 및 이를 제조하는 전자 빔 증착 장치
|
CN106486572B
(zh)
|
2015-09-02 |
2020-04-28 |
新世纪光电股份有限公司 |
发光二极管芯片
|
WO2017075776A1
(en)
|
2015-11-04 |
2017-05-11 |
Goertek. Inc |
Transferring method, manufacturing method, device and electronic apparatus of micro-led
|
KR102427644B1
(ko)
|
2015-11-16 |
2022-08-02 |
삼성전자주식회사 |
광원 모듈, 광원 모듈의 제조방법 및 이를 포함하는 디스플레이 장치
|
USD774476S1
(en)
*
|
2016-02-25 |
2016-12-20 |
Kingbright Electronics Co. Ltd. |
LED component
|
TWD178173S
(zh)
|
2016-02-25 |
2016-09-11 |
今臺電子股份有限公司 |
發光二極體封裝
|
USD791885S1
(en)
*
|
2016-03-02 |
2017-07-11 |
EverBlock Systems, LLC |
Block for a modular system
|
JP2019511838A
(ja)
|
2016-04-04 |
2019-04-25 |
グロ アーベーGlo Ab |
ダイ移送用のバックプレーン通過レーザ照射
|
US10177113B2
(en)
|
2016-08-18 |
2019-01-08 |
Genesis Photonics Inc. |
Method of mass transferring electronic device
|
CN107768495A
(zh)
|
2016-08-18 |
2018-03-06 |
新世纪光电股份有限公司 |
微型发光二极管及其制造方法
|
KR20180065700A
(ko)
*
|
2016-12-08 |
2018-06-18 |
삼성전자주식회사 |
발광 소자
|