TWD173883S - 發光二極體晶片之部分 - Google Patents

發光二極體晶片之部分

Info

Publication number
TWD173883S
TWD173883S TW103300553F TW103300553F TWD173883S TW D173883 S TWD173883 S TW D173883S TW 103300553 F TW103300553 F TW 103300553F TW 103300553 F TW103300553 F TW 103300553F TW D173883 S TWD173883 S TW D173883S
Authority
TW
Taiwan
Prior art keywords
emitting diode
diode chip
light
light emitting
design
Prior art date
Application number
TW103300553F
Other languages
English (en)
Inventor
Hui Ching Feng
Original Assignee
璨圓光電股份有限公司
Formosa Epitaxy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 璨圓光電股份有限公司, Formosa Epitaxy Inc filed Critical 璨圓光電股份有限公司
Priority to TW103300553F priority Critical patent/TWD173883S/zh
Priority to US29/489,409 priority patent/USD745473S1/en
Publication of TWD173883S publication Critical patent/TWD173883S/zh

Links

Abstract

【物品用途】;本設計所依附的物品是一種發光二極體晶片，用以作為光源。;【設計說明】;本發光二極體晶片之設計特點在發光二極體晶片一面的外觀有均勻分布的孔洞排列，該些孔洞有兩種型態在一行交錯排列，如立體圖所示。;圖式所揭露之虛線部分為本案不主張設計之部分。
TW103300553F 2014-01-28 2014-01-28 發光二極體晶片之部分 TWD173883S (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW103300553F TWD173883S (zh) 2014-01-28 2014-01-28 發光二極體晶片之部分
US29/489,409 USD745473S1 (en) 2014-01-28 2014-04-30 Light emitting diode chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103300553F TWD173883S (zh) 2014-01-28 2014-01-28 發光二極體晶片之部分

Publications (1)

Publication Number Publication Date
TWD173883S true TWD173883S (zh) 2016-02-21

Family

ID=54832364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103300553F TWD173883S (zh) 2014-01-28 2014-01-28 發光二極體晶片之部分

Country Status (2)

Country Link
US (1) USD745473S1 (zh)
TW (1) TWD173883S (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWD174128S (zh) * 2014-10-28 2016-03-01 晶元光電股份有限公司 發光二極體元件之部分
TWD180312S (zh) * 2014-10-30 2016-12-21 晶元光電股份有限公司 發光二極體元件之部分
TWD180313S (zh) * 2014-11-05 2016-12-21 晶元光電股份有限公司 發光二極體元件之部分
TWD180314S (zh) * 2014-11-10 2016-12-21 晶元光電股份有限公司 發光二極體元件之部分

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2280631A (en) * 1938-06-16 1942-04-21 Burgess Battery Co Facing sheet for sound absorbing material
NL176323C (nl) * 1975-03-11 1985-03-18 Philips Nv Halfgeleiderinrichting voor het opwekken van incoherente straling.
US4189027A (en) * 1976-08-19 1980-02-19 United Technologies Corporation Sound suppressor liners
JP3119193B2 (ja) * 1997-03-07 2000-12-18 日産自動車株式会社 遮音板構造
USD409681S (en) * 1998-03-18 1999-05-11 Interlego Ag Toy building element
US6540373B2 (en) * 2001-03-29 2003-04-01 Bendrix L. Bailey Lighting system
JP3774682B2 (ja) * 2001-06-29 2006-05-17 キヤノン株式会社 電子放出素子、電子源および画像形成装置
CN1464953A (zh) * 2001-08-09 2003-12-31 松下电器产业株式会社 Led照明装置和卡型led照明光源
JP2003168820A (ja) * 2001-12-03 2003-06-13 Sony Corp 剥離方法、レーザー光の照射方法及びこれらを用いた素子の製造方法
USD511329S1 (en) * 2003-07-09 2005-11-08 Nichia Corporation Light emitting diode
USD510912S1 (en) * 2003-09-15 2005-10-25 Nichia Corporation Light emitting diode
KR20050086238A (ko) * 2004-02-25 2005-08-30 삼성에스디아이 주식회사 전계 방출 표시장치
JP4754850B2 (ja) * 2004-03-26 2011-08-24 パナソニック株式会社 Ｌｅｄ実装用モジュールの製造方法及びｌｅｄモジュールの製造方法
KR20060011662A (ko) * 2004-07-30 2006-02-03 삼성에스디아이 주식회사 전자 방출 소자 및 그 제조방법
KR20060019846A (ko) * 2004-08-30 2006-03-06 삼성에스디아이 주식회사 전자 방출 소자
US7710014B2 (en) * 2005-03-31 2010-05-04 Samsung Sdi Co., Ltd. Electron emission device, electron emission display device using the same and method of manufacturing the same
KR20060119271A (ko) * 2005-05-19 2006-11-24 삼성에스디아이 주식회사 전자 방출 소자 및 그 제조방법
KR20070046650A (ko) * 2005-10-31 2007-05-03 삼성에스디아이 주식회사 전자 방출 디바이스
KR100723393B1 (ko) * 2006-02-02 2007-05-30 삼성에스디아이 주식회사 전계방출 소자의 제조방법
US7786491B2 (en) * 2006-02-02 2010-08-31 Panasonic Corporation Semiconductor light-emitting device comprising a plurality of semiconductor layers
CN100583350C (zh) * 2006-07-19 2010-01-20 清华大学 微型场发射电子器件
KR20080045463A (ko) * 2006-11-20 2008-05-23 삼성에스디아이 주식회사 발광 장치 및 표시 장치
JP5201566B2 (ja) * 2006-12-11 2013-06-05 豊田合成株式会社 化合物半導体発光素子及びその製造方法
US8416823B2 (en) * 2007-05-04 2013-04-09 The Board Of Trustees Of The University Of Illinois Quantum well active region with three dimensional barriers and fabrication
TWM342455U (en) * 2007-11-14 2008-10-11 Taiwan Green Energy Co Ltd LED lighting device embedded in ceiling
KR101449035B1 (ko) * 2008-04-30 2014-10-08 엘지이노텍 주식회사 반도체 발광소자
CA131384S (en) * 2009-01-27 2010-06-22 Lego As Toy building element
KR101034053B1 (ko) * 2010-05-25 2011-05-12 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR20110132136A (ko) * 2010-06-01 2011-12-07 삼성전자주식회사 연결 구조를 이용한 발광소자 및 그 제조 방법
USD646647S1 (en) * 2010-07-30 2011-10-11 Everlight Electronics Co., Ltd. Light emitting diode
JP5649878B2 (ja) * 2010-08-30 2015-01-07 シャープ株式会社 半導体装置およびその検査方法、並びに電気機器
JP5204177B2 (ja) * 2010-09-06 2013-06-05 株式会社東芝 半導体発光素子及びその製造方法
WO2012082523A2 (en) * 2010-12-16 2012-06-21 California Institute Of Technology Chemically-etched nanostructures and related devices
KR101239395B1 (ko) * 2011-07-11 2013-03-05 고려대학교 산학협력단 전계 방출원 및 이를 적용하는 소자 및 그 제조방법
JP5720601B2 (ja) * 2012-02-14 2015-05-20 豊田合成株式会社 半導体発光素子
CN103378234B (zh) * 2012-04-25 2016-02-17 清华大学 发光二极管
US20130321902A1 (en) * 2012-06-05 2013-12-05 Electronics And Telecommunications Research Institute Low-loss flexible meta-material and method of fabricating the same
KR20140140166A (ko) * 2013-05-28 2014-12-09 포항공과대학교 산학협력단 발광 다이오드
USD725052S1 (en) * 2014-04-30 2015-03-24 Epistar Corporation Light-emitting diode device

Also Published As

Publication number Publication date
USD745473S1 (en) 2015-12-15

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