JP2016015451A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000001514 detection method Methods 0.000 claims abstract description 56
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 230000005389 magnetism Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000005859 coupling reaction Methods 0.000 abstract 2
- 239000004020 conductor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H02M1/00—Details of apparatus for conversion
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Abstract
【解決手段】複数のパワー素子11,12と、複数のパワー素子を電気的に接続する導電プレートと、複数のパワー素子を入出力する電流を検出する電流検出部50と、を有する半導体装置。導電プレートは、第1パワー素子の電極に接続される第1搭載部29と第3搭載部31、第2パワー素子の電極に接続される第2搭載部30と第4搭載部32、および、第2搭載部と第3搭載部とを連結して第1パワー素子と第2パワー素子とを直列接続する第1連結部41,42,44を有し、第2搭載部若しくは第3搭載部に出力端子28が電気的に接続され、この出力端子に電流検出部が固定され、出力端子の電流の流動によって生じる磁界が電流検出部を透過する。
【選択図】図3
Description
(第1実施形態)
図1〜図6に基づいて、本実施形態に係る半導体装置を説明する。図1では半導体装置100の他に3相モータ200と制御装置300を図示している。図3では後述するアーム部41〜43の接続を明示するために、その領域にハッチングを入れている。以下においては互いに直交の関係にある3方向を、x方向、y方向、z方向と示す。
Claims (8)
- インバータを構成する複数のパワー素子(11,12)と、
複数の前記パワー素子を電気的に接続する導電プレート(13)と、
複数の前記パワー素子に入力される電流、および、複数の前記パワー素子から出力される電流の流動によって生じる磁界に基づいて、複数の前記パワー素子の電流を検出する電流検出部(50)と、を有する半導体装置であって、
複数の前記パワー素子として、少なくとも第1パワー素子(11)と第2パワー素子(12)を有し、
前記導電プレートは、
前記第1パワー素子の一端が接続される第1搭載部(29)と、
前記第2パワー素子の一端が接続される第2搭載部(30)と、
前記第1パワー素子の他端が接続される第3搭載部(31)と、
前記第2パワー素子の他端が接続される第4搭載部(32)と、
前記第2搭載部と前記第3搭載部とを電気的に接続することで前記第1パワー素子と前記第2パワー素子とを直列接続する第1連結部(41,42,44)と、
前記第2搭載部若しくは前記第3搭載部と電気的に接続された出力端子(28)と、を有し、
前記第1搭載部が第1電源に接続され、前記第4搭載部が第2電源に接続されており、
前記出力端子に前記電流検出部が固定され、前記出力端子の電流の流動によって生じる磁界が前記電流検出部を透過することを特徴とする半導体装置。 - 平行の関係にある3つの平面を第1平面(P1)、第2平面(P2)、第3平面(P3)とし、前記第1平面と前記第2平面との間に前記第3平面が位置する、とすると、
前記第1搭載部と前記第2搭載部とが前記第1平面に位置し、
前記第3搭載部と前記第4搭載部とが前記第2平面に位置し、
前記第1パワー素子と前記第2パワー素子とが前記第3平面に位置しており、
前記第1連結部は前記第3平面を横断して前記第2搭載部から前記第3搭載部へと延びた形状を成していることを特徴とする請求項1に記載の半導体装置。 - 平行の関係にある3つの平面を第1平面(P1)、第2平面(P2)、第3平面(P3)とし、前記第1平面と前記第2平面との間に前記第3平面が位置する、とすると、
前記第1搭載部と前記第4搭載部とが前記第1平面に位置し、
前記第2搭載部と前記第3搭載部とが前記第2平面に位置し、
前記第1パワー素子と前記第2パワー素子とが前記第3平面に位置しており、
前記第1連結部(42)は前記第2平面に沿って前記第2搭載部から前記第3搭載部へと延びた形状を成していることを特徴とする請求項1に記載の半導体装置。 - 前記電流検出部は、前記第1平面と前記第2平面との間に位置していることを特徴とする請求項2または請求項3に記載の半導体装置。
- 前記出力端子は、前記電流検出部の固定される第5搭載部(45)と、前記第2搭載部若しくは前記第3搭載部と前記第5搭載部とを連結する第2連結部(46)と、を有し、
前記第5搭載部は、前記第1搭載部と前記第3搭載部との対向領域、および、前記第2搭載部と前記第4搭載部との対向領域それぞれから外れた領域に位置していることを特徴とする請求項4に記載の半導体装置。 - 前記第1パワー素子および前記第2パワー素子から出力される電磁ノイズが前記電流検出部を透過することを抑制するシールド(90)を有し、
前記シールドは、前記第1平面に位置する平板状の第1シールド部(91)と、前記第2平面に位置する平板状の第2シールド部(92)と、を有し、前記第1シールド部と前記第2シールド部はそれぞれグランドに接続されており、
前記第1シールド部の主面(91a)と前記第2シールド部の主面(92a)とが前記電流検出部および前記第5搭載部を介して対向していることを特徴とする請求項5に記載の半導体装置。 - 前記出力端子の電流の流動によって生じる磁界を集磁する集磁コア(55)を有し、
前記集磁コアによって集磁された前記出力端子の磁界が前記電流検出部を透過することを特徴とする請求項1〜4いずれか1項に記載の半導体装置。 - 前記電流検出部は、磁界を電気信号に変換する磁電変換部(51)と、前記磁電変換部から出力される電気信号に基づいて前記第1パワー素子および前記第2パワー素子の電流を算出する算出部(52)と、を有することを特徴とする請求項1〜7いずれか1項に記載の半導体装置。
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JP2014137865A JP6354392B2 (ja) | 2014-07-03 | 2014-07-03 | 半導体装置 |
US15/320,343 US10027250B2 (en) | 2014-07-03 | 2015-06-26 | Semiconductor device with power elements and current detection portion |
DE112015003117.0T DE112015003117B4 (de) | 2014-07-03 | 2015-06-26 | Halbleitervorrichtung |
PCT/JP2015/003237 WO2016002184A1 (ja) | 2014-07-03 | 2015-06-26 | 半導体装置 |
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Cited By (3)
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JP2017183518A (ja) * | 2016-03-30 | 2017-10-05 | 日立オートモティブシステムズ株式会社 | パワー半導体装置 |
JP2019117833A (ja) * | 2017-12-26 | 2019-07-18 | 株式会社デンソー | 半導体モジュール及び電力変換装置 |
WO2022249921A1 (ja) * | 2021-05-25 | 2022-12-01 | 株式会社オートネットワーク技術研究所 | 回路構成体 |
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US11570921B2 (en) * | 2015-06-11 | 2023-01-31 | Tesla, Inc. | Semiconductor device with stacked terminals |
JP6772768B2 (ja) * | 2016-11-09 | 2020-10-21 | 株式会社デンソー | 半導体装置 |
JP6701240B2 (ja) * | 2018-02-09 | 2020-05-27 | 本田技研工業株式会社 | 素子ユニット |
DE102019003373B4 (de) | 2019-05-14 | 2023-08-10 | Infineon Technologies Austria Ag | Leistungshalbleitervorrichtung mit integrierter Strommessung und Leistungsmodul diese aufweisend und Verfahren zum Messen eines Stroms darin |
JP7463909B2 (ja) * | 2020-08-25 | 2024-04-09 | 株式会社デンソー | 半導体装置及びその製造方法 |
DE102022102966A1 (de) | 2022-02-09 | 2023-08-10 | Audi Aktiengesellschaft | Halbleiter-Modul mit integriertem Stromsensor |
WO2023213346A1 (de) | 2022-05-06 | 2023-11-09 | Fachhochschule Kiel | Leistungshalbleiter-modul mit steckverbindung |
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JP2019117833A (ja) * | 2017-12-26 | 2019-07-18 | 株式会社デンソー | 半導体モジュール及び電力変換装置 |
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WO2022249921A1 (ja) * | 2021-05-25 | 2022-12-01 | 株式会社オートネットワーク技術研究所 | 回路構成体 |
Also Published As
Publication number | Publication date |
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JP6354392B2 (ja) | 2018-07-11 |
WO2016002184A1 (ja) | 2016-01-07 |
US20170155341A1 (en) | 2017-06-01 |
DE112015003117T5 (de) | 2017-03-30 |
DE112015003117B4 (de) | 2023-08-31 |
US10027250B2 (en) | 2018-07-17 |
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