JP2015185834A - 半導体装置 - Google Patents
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Abstract
Description
先ず、図1〜図6に基づき、本実施形態に係る半導体装置100の構成について説明する。
なお、本実施形態では、6つのアームすべてに対して、ボンディングワイヤ70を、同一機能で対とする例を示した。しかしながら、6つのアームの一部のみ、例えば下アーム側のみに対して、ボンディングワイヤ70を、同一機能で対としても良い。
本実施形態において、第1実施形態に示した半導体装置100と共通する部分についての説明は割愛する。
本実施形態では、主端子であるP端子20、N端子21、出力端子22〜24の全てを対をなす構造とする例を示した。しかしながら、しかしながら、複数の主端子の一部のみについて、対をなす構造としても良い。例えば、出力端子22〜24のみ、対をなす構造としても良い。
Claims (7)
- スイッチング素子が形成され、対をなす主電極と複数の制御電極とを有する少なくともひとつの半導体チップ(10〜15)と、
前記半導体チップを封止する封止部(50)と、
前記主電極に電気的に接続され、前記封止部から突出する複数の主端子(20〜24)と、
前記制御電極にそれぞれ接続された複数の中継部材(70)と、
前記中継部材を介して前記制御電極に電気的に接続され、対応する前記中継部材とともに信号経路をなし、前記封止部から突出する複数の制御端子(30〜35)と、
を備え、
複数の前記主端子が、前記封止部の一面から突出する第1主端子と、前記一面とは別の面から突出する第2主端子と、を有し、
同一の前記半導体チップに対応する複数の前記制御端子が前記一面から突出し、該制御端子を含む前記信号経路が第1方向に並んで配置されるとともに、前記第1方向において前記第1主端子が前記信号経路に並んで配置された半導体装置であって、
並んで配置された前記信号経路と前記第1主端子において、前記第1方向における前記信号経路と前記第1主端子との配置が、前記信号経路と前記第1主端子との相互インダクタンスが各信号経路で互いに等しくなる配置とされていることを特徴とする半導体装置。 - 前記第1主端子に並んで配置された複数の前記信号経路において、同じ機能の前記中継部材がそれぞれ対で設けられ、
対をなす前記中継部材の一方を含む第1中継群(71)と、他方を含む第2中継群(72)とが、第1方向において隣り合って配置されるとともに、前記第1中継群と前記第2中継群との並び順がミラー反転の関係となっていることを特徴とする請求項1に記載の半導体装置。 - 前記主端子は、高電位側の電源ラインに接続される高電位側の電源端子と、低電位側の電源ラインに接続される低電位側の電源端子と、負荷に出力するための三相分の出力端子と、を有し、
前記半導体チップは、前記高電位側の電源端子が接続される三相分の上アーム半導体チップと、前記低電位側の電源端子が接続される三相分の下アーム半導体チップと、を有し、
前記上アーム半導体チップ及び前記下アーム半導体チップの一方に接続された各相の前記制御端子と、各相の前記出力端子とが、前記封止部の同一面から突出し、
各相の前記出力端子が前記第1主端子とされ、対応する相の前記ボンディングワイヤがそれぞれ対で設けられていることを特徴とする請求項2に記載の半導体装置。 - 同じ機能の前記第1主端子が対で設けられ、
対をなす前記第1主端子(20a,20b,21a,21b,22a,22b)が、前記第1方向において、複数の前記信号経路を間に挟むように、複数の前記信号経路の両側に配置されていることを特徴とする請求項1又は請求項2に記載の半導体装置。 - 前記主端子は、高電位側の電源ラインに接続される高電位側の電源端子と、低電位側の電源ラインに接続される低電位側の電源端子と、負荷に出力するための三相分の出力端子と、を有し、
前記半導体チップは、前記高電位側の電源端子が接続される三相分の上アーム半導体チップと、前記低電位側の電源端子が接続される三相分の下アーム半導体チップと、を有し、
前記上アーム半導体チップ及び前記下アーム半導体チップの一方に接続された各相の前記制御端子と、各相の前記出力端子とが、前記封止部の同一面から突出し、
各相の前記出力端子が対をなす前記第1主端子とされて、対応する相の前記信号経路を間に挟んでいることを特徴とする請求項4に記載の半導体装置。 - 前記主電極は、前記半導体チップの厚み方向における両面にそれぞれ形成され、
前記上アーム半導体チップ及び前記下アーム半導体チップの一方に接続された各相の前記制御端子と、各相の前記出力端子とが、前記封止部の前記厚み方向における両面を繋ぐ側面のひとつから突出するとともに前記厚み方向に直交する方向に延設され、
前記上アーム半導体チップ及び前記下アーム半導体チップの他方に接続された各相の前記制御端子と、各電源端子とが、前記側面と反対の面から突出するとともに前記直交する方向に延設されていることを特徴とする請求項3又は請求項5に記載の半導体装置。 - 前記スイッチング素子の駆動を制御するための回路が形成されたドライバチップ(40〜45)をさらに備え、
前記中継部材は、前記ドライバチップと前記制御電極とを電気的に中継しており、
前記制御端子は、前記ドライバチップを介して前記中継部材に接続されていることを特徴とする請求項1〜6いずれか1項に記載の半導体装置。
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JP2014064195A JP6252293B2 (ja) | 2014-03-26 | 2014-03-26 | 半導体装置 |
CN201580015860.5A CN106133907A (zh) | 2014-03-26 | 2015-03-05 | 半导体装置 |
US15/128,648 US20170110395A1 (en) | 2014-03-26 | 2015-03-05 | Semiconductor device |
PCT/JP2015/001209 WO2015146010A1 (ja) | 2014-03-26 | 2015-03-05 | 半導体装置 |
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Cited By (11)
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WO2019021731A1 (ja) * | 2017-07-27 | 2019-01-31 | 株式会社デンソー | 半導体モジュール |
US10283440B2 (en) | 2016-03-22 | 2019-05-07 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
JP2019140364A (ja) * | 2018-02-06 | 2019-08-22 | トヨタ自動車株式会社 | 半導体装置 |
US10622287B2 (en) | 2017-11-07 | 2020-04-14 | Fuji Electric Co., Ltd. | Semiconductor package |
WO2022080122A1 (ja) * | 2020-10-14 | 2022-04-21 | ローム株式会社 | 半導体モジュール |
WO2022080114A1 (ja) * | 2020-10-14 | 2022-04-21 | ローム株式会社 | 半導体モジュール |
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WO2022215508A1 (ja) * | 2021-04-09 | 2022-10-13 | 株式会社デンソー | パワーカード |
WO2023090072A1 (ja) * | 2021-11-16 | 2023-05-25 | ローム株式会社 | 半導体装置 |
US11694948B2 (en) | 2021-04-12 | 2023-07-04 | Mitsubishi Electric Corporation | Semiconductor device and semiconductor module using same |
US11955413B2 (en) | 2020-10-14 | 2024-04-09 | Rohm Co., Ltd. | Semiconductor module |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11127662B2 (en) * | 2017-03-14 | 2021-09-21 | Rohm Co., Ltd. | Semiconductor device |
JP6836201B2 (ja) * | 2017-12-19 | 2021-02-24 | 株式会社デンソー | 電力変換装置 |
CN110634817B (zh) * | 2019-09-25 | 2023-04-18 | 湖南大学 | 一种由igbt和mosfet构成的混合功率模块的封装结构 |
JP7428019B2 (ja) | 2020-03-06 | 2024-02-06 | 富士電機株式会社 | 半導体モジュール |
CN115085706A (zh) * | 2021-03-11 | 2022-09-20 | 台达电子企业管理(上海)有限公司 | 开关模块 |
US11923344B2 (en) | 2021-11-11 | 2024-03-05 | Wolfspeed, Inc. | Compact power module |
US20230363097A1 (en) * | 2022-05-04 | 2023-11-09 | Wolfspeed, Inc. | Dual inline power module |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002033446A (ja) * | 2000-05-10 | 2002-01-31 | Nissan Motor Co Ltd | 半導体装置 |
JP2007329427A (ja) * | 2006-06-09 | 2007-12-20 | Honda Motor Co Ltd | 半導体装置 |
JP2012073306A (ja) * | 2010-09-28 | 2012-04-12 | Hitachi Displays Ltd | 表示装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4564937B2 (ja) * | 2006-04-27 | 2010-10-20 | 日立オートモティブシステムズ株式会社 | 電気回路装置及び電気回路モジュール並びに電力変換装置 |
JP5947165B2 (ja) * | 2012-09-05 | 2016-07-06 | ルネサスエレクトロニクス株式会社 | 電子装置 |
-
2014
- 2014-03-26 JP JP2014064195A patent/JP6252293B2/ja not_active Expired - Fee Related
-
2015
- 2015-03-05 WO PCT/JP2015/001209 patent/WO2015146010A1/ja active Application Filing
- 2015-03-05 US US15/128,648 patent/US20170110395A1/en not_active Abandoned
- 2015-03-05 CN CN201580015860.5A patent/CN106133907A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002033446A (ja) * | 2000-05-10 | 2002-01-31 | Nissan Motor Co Ltd | 半導体装置 |
JP2007329427A (ja) * | 2006-06-09 | 2007-12-20 | Honda Motor Co Ltd | 半導体装置 |
JP2012073306A (ja) * | 2010-09-28 | 2012-04-12 | Hitachi Displays Ltd | 表示装置 |
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Also Published As
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JP6252293B2 (ja) | 2017-12-27 |
WO2015146010A1 (ja) | 2015-10-01 |
CN106133907A (zh) | 2016-11-16 |
US20170110395A1 (en) | 2017-04-20 |
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