JP2016006855A - 半導体装置とその作製方法、電子機器 - Google Patents
半導体装置とその作製方法、電子機器 Download PDFInfo
- Publication number
- JP2016006855A JP2016006855A JP2015098705A JP2015098705A JP2016006855A JP 2016006855 A JP2016006855 A JP 2016006855A JP 2015098705 A JP2015098705 A JP 2015098705A JP 2015098705 A JP2015098705 A JP 2015098705A JP 2016006855 A JP2016006855 A JP 2016006855A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transistor
- oxide semiconductor
- insulating film
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 631
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000013078 crystal Substances 0.000 claims abstract description 90
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims description 164
- 239000003990 capacitor Substances 0.000 claims description 59
- 239000011347 resin Substances 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 30
- 238000012545 processing Methods 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000000280 densification Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 6
- 239000010408 film Substances 0.000 description 922
- 239000010410 layer Substances 0.000 description 130
- 239000008188 pellet Substances 0.000 description 123
- 239000000758 substrate Substances 0.000 description 110
- 239000007789 gas Substances 0.000 description 92
- 238000005530 etching Methods 0.000 description 75
- 229910052760 oxygen Inorganic materials 0.000 description 67
- 239000001301 oxygen Substances 0.000 description 67
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 63
- 229910052721 tungsten Inorganic materials 0.000 description 55
- 239000010937 tungsten Substances 0.000 description 55
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 51
- 239000000463 material Substances 0.000 description 42
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 39
- 239000011701 zinc Substances 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- 229910052710 silicon Inorganic materials 0.000 description 35
- 239000010703 silicon Substances 0.000 description 35
- 229910052751 metal Inorganic materials 0.000 description 34
- 238000010438 heat treatment Methods 0.000 description 33
- 230000006870 function Effects 0.000 description 32
- 230000004888 barrier function Effects 0.000 description 31
- 238000005229 chemical vapour deposition Methods 0.000 description 30
- 239000002184 metal Substances 0.000 description 29
- 239000000523 sample Substances 0.000 description 27
- 238000004544 sputter deposition Methods 0.000 description 24
- 229910052739 hydrogen Inorganic materials 0.000 description 21
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 229910052786 argon Inorganic materials 0.000 description 20
- 238000010586 diagram Methods 0.000 description 20
- 239000001257 hydrogen Substances 0.000 description 20
- 238000000231 atomic layer deposition Methods 0.000 description 19
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 19
- 239000000203 mixture Substances 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 229910052719 titanium Inorganic materials 0.000 description 18
- 239000010936 titanium Substances 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 17
- 239000012535 impurity Substances 0.000 description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 14
- 239000002245 particle Substances 0.000 description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 230000007547 defect Effects 0.000 description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 125000004430 oxygen atom Chemical group O* 0.000 description 11
- 238000004549 pulsed laser deposition Methods 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 238000001451 molecular beam epitaxy Methods 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 9
- -1 copper-magnesium-aluminum Chemical compound 0.000 description 9
- 238000002003 electron diffraction Methods 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 239000002159 nanocrystal Substances 0.000 description 9
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 8
- 229910007541 Zn O Inorganic materials 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 229910052725 zinc Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 238000012916 structural analysis Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229960001730 nitrous oxide Drugs 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 230000005264 electron capture Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 235000013842 nitrous oxide Nutrition 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000011449 brick Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 150000003657 tungsten Chemical class 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229940127554 medical product Drugs 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
図1(A)に半導体装置の上面図の一例を示す。図1(B)は図1(A)に示す一点鎖線A1−A2に対応する断面図である。半導体装置は、図1(B)に示すように第1のトランジスタ110、第2のトランジスタ100を有する。第2のトランジスタ100は第1のトランジスタ110の上方に設けられ、第1のトランジスタ110と第2のトランジスタ100の間にはバリア膜120が設けられている。
以下では、上記構成例で示した半導体装置の作製方法の一例について、図11乃至図16を用いて説明する。
また、本実施の形態の変形例として、図17に示すように、第1のトランジスタ110と第2のトランジスタ100の間に容量素子130を設ける構成にしてもよい。容量素子の位置を第2のトランジスタ100より上方に設けてもよい。具体的には、容量素子130の一方の電極136は、第2のトランジスタ100のソースまたはドレインの一方、および第1のトランジスタ110のゲートと電気的に接続する。また、容量素子130の一方の電極136上に絶縁膜137が設けられ、絶縁膜137上に容量素子130の他方の電極138が設けられている。なお、電極138は、配線CLと電気的に接続されている。また、電極136は、プラグ165を介して電極103bと電気的に接続している。
また、本実施の形態の変形例として、図18に示すような構成にしてもよい。図1との違いは、二層のハードマスクのうちの絶縁膜106aを意図的に残している点である。絶縁膜106aは、CMPのストッパー膜として機能し、導電膜103a1の膜厚が小さくなることを抑制することができる。または、ゲート電極と、ソース電極の寄生容量と、ゲート電極と、ドレイン電極間の寄生容量を小さくすることができる。または、ゲート電極と、ソース電極のリーク電流と、ゲート電極と、ドレイン電極間のリーク電流を小さくすることができる。
また、本実施の形態の変形例として、図19に示すように、第1のトランジスタ110のゲート電極115の位置と第2のトランジスタ100のゲート電極105が互いに重ならない構成としてもよい。
また、本実施の形態の変形例として、図20(A)に示すように、絶縁膜128を形成した後に、上記と同様の方法により、低抵抗層113aと、低抵抗層113bと、第2のトランジスタ100のゲート電極105まで達する開口部を設け、低抵抗層113aに達するプラグ170、第2のトランジスタ100のゲート電極105に達するプラグ171、低抵抗層113bに達するプラグ172を形成し、続いて、プラグ170と電気的に接続する電極173と、プラグ171と電気的に接続する電極174と、プラグ172と電気的に接続する電極175を形成した構成としても良い。このように、異なる膜種の多層膜に開口部を形成する場合、図20(B)に示すように一部の膜が後退したようなくびれた断面形状になる事がある。これは、くびれた部分の膜のエッチング速度がくびれた部分の上下の膜より、大きい場合にこのような形状になることがあるが、プラグの形成には影響されない。また、くびれた部分は電気的に接触する面積が大きくなるのでトランジスタ特性のオン特性が向上することもある。
本実施の形態では、上記実施の形態で説明した半導体装置に含まれているトランジスタにおいて、酸化物半導体膜に適用可能な一態様について説明する。
以下では、CAAC−OSおよびnc−OSの成膜モデルの一例について説明する。
本実施の形態では、本発明の一態様のトランジスタを利用した回路の一例について図面を参照して説明する。
実施の形態1に示した構成において、トランジスタや配線、電極の接続構成を異ならせることにより、様々な回路を構成することができる。以下では、本発明の一態様の半導体装置を用いることにより実現できる回路構成の例を説明する。
図21(A)に示す回路図は、pチャネル型のトランジスタ2200とnチャネル型のトランジスタ2100を直列に接続し、且つそれぞれのゲートを接続した、いわゆるCMOS回路の構成を示している。なお、図中、第2の半導体材料が適用されたトランジスタには「OS」の記号を付して示している。
また図21(B)に示す回路図は、トランジスタ2100とトランジスタ2200のそれぞれのソースとドレインを接続した構成を示している。このような構成とすることで、いわゆるアナログスイッチとして機能させることができる。
本発明の一態様であるトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、且つ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を図21(C)に示す。
本実施の形態では、上記実施の形態で例示したトランジスタ、または記憶装置を含むRFIDタグについて、図24を用いて説明する。
本実施の形態では、少なくとも実施の形態で説明したトランジスタを用いることができ、先の実施の形態で説明した記憶装置を含むCPUについて説明する。
本実施の形態では、本発明の一態様の表示パネルの構成例について説明する。
図27(A)は、本発明の一態様の表示パネルの上面図であり、図27(B)は、本発明の一態様の表示パネルの画素に液晶素子を適用する場合に用いることができる画素回路を説明するための回路図である。また、図27(C)は、本発明の一態様の表示パネルの画素に有機EL素子を適用する場合に用いることができる画素回路を説明するための回路図である。
また、画素の回路構成の一例を図27(B)に示す。ここでは、VA型液晶表示パネルの画素に適用することができる画素回路を示す。
画素の回路構成の他の一例を図27(C)に示す。ここでは、有機EL素子を用いた表示パネルの画素構造を示す。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図28に示す。
本実施の形態では、本発明の一態様に係るRFIDの使用例について図29を用いながら説明する。RFIDの用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図29(A)参照)、記録媒体(DVDやビデオテープ等、図29(B)参照)、包装用容器類(包装紙やボトル等、図29(C)参照)、乗り物類(自転車等、図29(D)参照)、身の回り品(鞄や眼鏡等)、食品類、植物類、動物類、人体、衣類、生活用品類、薬品や薬剤を含む医療品、または電子機器(液晶表示装置、EL表示装置、テレビジョン装置、または携帯電話)等の物品、若しくは各物品に取り付ける荷札(図29(E)、図29(F)参照)等に設けて使用することができる。
101a 酸化物半導体膜
101b 酸化物半導体膜
101c 酸化物半導体膜
102a 酸化物半導体膜
102b 酸化物半導体膜
103 導電膜
103a 電極
103a1 導電膜
103a2 島状導電膜
103b 電極
103c 電極
104 ゲート絶縁膜
105 ゲート電極
106 絶縁膜
106a 絶縁膜
107 絶縁膜
108 絶縁膜
109a 低抵抗領域
109b 低抵抗領域
110 トランジスタ
111 半導体基板
112 半導体膜
113a 低抵抗層
113b 低抵抗層
114 ゲート絶縁膜
115 ゲート電極
115a ゲート電極
115b ゲート電極
120 バリア膜
121 絶縁膜
122 絶縁膜
123 絶縁膜
124 絶縁膜
125 絶縁膜
126 絶縁膜
127 絶縁膜
128 絶縁膜
130 容量素子
131a 酸化物半導体膜
131b 酸化物半導体膜
136 電極
137 絶縁膜
138 電極
140a 有機樹脂膜
140b 有機樹脂膜
141 レジストマスク
141a レジストマスク
146a 酸化物半導体膜
146b 酸化物半導体膜
147a 層
147b 層
160 トランジスタ
161 プラグ
162 プラグ
163 プラグ
164 プラグ
165 プラグ
166 プラグ
167 プラグ
168 プラグ
169 プラグ
170 プラグ
171 プラグ
172 プラグ
173 電極
174 電極
175 電極
180 配線
181 配線
201 タングステン膜
202 酸化シリコン膜
203 酸化アルミニウム膜
204 酸化窒化シリコン膜
205 酸化物半導体膜
206 酸化物半導体膜
207a タングステン膜
207b タングステン膜
208a 窒化チタン膜
208b タングステン膜
211 タングステン膜
212 酸化シリコン膜
213 酸化アルミニウム膜
214 酸化窒化シリコン膜
215 酸化物半導体膜
216 酸化物半導体膜
217a タングステン膜
217b タングステン膜
218a 窒化チタン膜
218b タングステン膜
700 基板
701 画素部
702 走査線駆動回路
703 走査線駆動回路
704 信号線駆動回路
710 容量配線
712 ゲート配線
713 ゲート配線
714 ドレイン電極
716 トランジスタ
717 トランジスタ
718 液晶素子
719 液晶素子
720 画素
721 スイッチング用トランジスタ
722 駆動用トランジスタ
723 容量素子
724 発光素子
725 信号線
726 走査線
727 電源線
728 共通電極
800 RFIDタグ
801 通信器
802 アンテナ
803 無線信号
804 アンテナ
805 整流回路
806 定電圧回路
807 復調回路
808 変調回路
809 論理回路
810 記憶回路
811 ROM
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
2100 トランジスタ
2200 トランジスタ
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
4000 RFID
5100 ペレット
5100a ペレット
5100b ペレット
5101 イオン
5102 酸化亜鉛層
5103 粒子
5105a ペレット
5105a1 領域
5105a2 ペレット
5105b ペレット
5105c ペレット
5105d ペレット
5105d1 領域
5105e ペレット
5120 基板
5130 ターゲット
5161 領域
Claims (16)
- 第1のトランジスタと、
第1のトランジスタ上に第1の絶縁膜と、
第1の絶縁膜上に第2の絶縁膜と、
第2の絶縁膜上に第2のトランジスタと、
第1のトランジスタに電気的に接続する第1の導電膜と、
第1の導電膜及び第2のトランジスタと電気的に接続する第2の導電膜とを有し、
第1の導電膜は第1の絶縁膜を貫通し、
第2の導電膜は第2の絶縁膜と、第2のトランジスタの半導体膜及びソース電極又はドレイン電極とを貫通し
第1のトランジスタのチャネル形成領域は、単結晶半導体を有し、
第2のトランジスタのチャネル形成領域は、酸化物半導体を有し、
第2の導電膜の底面の幅が5nm以下であることを特徴とする半導体装置。 - 請求項1において、
第1の導電膜は第1のトランジスタのソース領域又はドレイン領域に接することを特徴とする半導体装置。 - 請求項1において、
第1乃至第4の二等辺三角形と、正方形とで構成され、第1乃至第4の二等辺三角形の頂角が120°以下である逆正四角錐の頂点を第1のトランジスタのゲート電極の上面の中心としたとき、半導体膜の底面が正方形の領域に収まることを特徴とする半導体装置。 - 請求項3において、
第1のトランジスタのゲート電極の上面の中心と第2のトランジスタのゲート電極の上面の中心とは互いに重なり、
第1のトランジスタのゲート電極の上面の中心と半導体膜の上面の中心とは互いに重なることを特徴とする半導体装置。 - 請求項1において、
容量素子を有し、
容量素子は、第1のトランジスタと第2のトランジスタの間に位置することを特徴とする半導体装置。 - 請求項1に記載の半導体装置と、
表示装置、マイクロフォン、スピーカー、操作キー、タッチパネル、または、アンテナと、を有することを特徴とする電子機器。 - 第1のトランジスタと、
第1のトランジスタ上に第1の絶縁膜と、
第1の絶縁膜上に第2の絶縁膜と、
第2の絶縁膜上に第2のトランジスタと、
第1のトランジスタに電気的に接続する第1の導電膜と、
第1の導電膜及び第2のトランジスタと電気的に接続する第2の導電膜とを有し、
第1の導電膜は第1の絶縁膜を貫通し、
第2の導電膜は第2の絶縁膜と、第2のトランジスタの第1の半導体膜、第2の半導体膜、及びソース電極又はドレイン電極とを貫通し
第1のトランジスタのチャネル形成領域は、単結晶半導体を有し、
第2のトランジスタのチャネル形成領域は、酸化物半導体を有し、
第2の導電膜の底面の幅が5nm以下であることを特徴とする半導体装置。 - 請求項7において、
第1の導電膜は第1のトランジスタのソース領域又はドレイン領域に接することを特徴とする半導体装置。 - 請求項7において、
第2の半導体膜、ソース電極、及びドレイン電極上に第3の半導体膜を有し、
第2の半導体膜の電子親和力は、第1の半導体膜の電子親和力および第3の半導体膜の電子親和力よりも大きいことを特徴とする半導体装置。 - 請求項7において、
第1乃至第4の二等辺三角形と、正方形とで構成され、第1乃至第4の二等辺三角形の頂角が120°以下である逆正四角錐の頂点を第1のトランジスタのゲート電極の上面の中心としたとき、第1の半導体膜の底面が正方形の領域に収まることを特徴とする半導体装置。 - 請求項10において、
第1のトランジスタのゲート電極の上面の中心と第2のトランジスタのゲート電極の上面の中心とは互いに重なり、
第1のトランジスタのゲート電極の上面の中心と第1の半導体膜の上面の中心とは互いに重なることを特徴とする半導体装置。 - 請求項7において、
容量素子を有し、
容量素子は、第1のトランジスタと第2のトランジスタの間に位置することを特徴とする半導体装置。 - 請求項7に記載の半導体装置と、
表示装置、マイクロフォン、スピーカー、操作キー、タッチパネル、または、アンテナと、を有することを特徴とする電子機器。 - 単結晶半導体をチャネルとする第1のトランジスタを形成し、
第1のトランジスタ上に第1の絶縁膜を形成し、
第1の絶縁膜上に酸化物半導体膜を形成し、
酸化物半導体膜上に第1の導電膜を形成し、
第1の導電膜上に無機膜を形成し、
無機膜上に第1のマスクを形成し、
第1のマスクをマスクとして無機膜を加工し、第2のマスクを形成し、
第2のマスクをマスクとして、第1の導電膜、酸化物半導体膜、及び第1の絶縁膜に開口を形成し、
開口に第1の導電膜、酸化物半導体膜、及び第1の絶縁膜を貫通する第2の導電膜を形成し、
第1のマスクはレジストマスクであり、
第1の導電膜及び酸化物半導体膜は第2のトランジスタに含まれ、
第2の導電膜は第1のトランジスタ及び第2のトランジスタと電気的に接続することを特徴とする半導体装置の作製方法。 - 請求項14において、
無機膜と第1のマスクとの間に有機樹脂膜を形成することを特徴とする半導体装置の作製方法。 - 請求項14において、
第2の導電膜を研磨処理する工程を含むことを特徴とする半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015098705A JP6487268B2 (ja) | 2014-05-30 | 2015-05-14 | 半導体装置とその作製方法、電子機器 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014112369 | 2014-05-30 | ||
JP2014112369 | 2014-05-30 | ||
JP2015098705A JP6487268B2 (ja) | 2014-05-30 | 2015-05-14 | 半導体装置とその作製方法、電子機器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019029473A Division JP6695462B2 (ja) | 2014-05-30 | 2019-02-21 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016006855A true JP2016006855A (ja) | 2016-01-14 |
JP2016006855A5 JP2016006855A5 (ja) | 2018-06-28 |
JP6487268B2 JP6487268B2 (ja) | 2019-03-20 |
Family
ID=54698368
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015098705A Active JP6487268B2 (ja) | 2014-05-30 | 2015-05-14 | 半導体装置とその作製方法、電子機器 |
JP2019029473A Active JP6695462B2 (ja) | 2014-05-30 | 2019-02-21 | 半導体装置 |
JP2020075362A Withdrawn JP2020161822A (ja) | 2014-05-30 | 2020-04-21 | 半導体装置 |
JP2022104759A Active JP7337233B2 (ja) | 2014-05-30 | 2022-06-29 | 半導体装置 |
JP2022190079A Active JP7455935B2 (ja) | 2014-05-30 | 2022-11-29 | 半導体装置 |
JP2023207482A Pending JP2024028270A (ja) | 2014-05-30 | 2023-12-08 | 半導体装置及び発光装置 |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019029473A Active JP6695462B2 (ja) | 2014-05-30 | 2019-02-21 | 半導体装置 |
JP2020075362A Withdrawn JP2020161822A (ja) | 2014-05-30 | 2020-04-21 | 半導体装置 |
JP2022104759A Active JP7337233B2 (ja) | 2014-05-30 | 2022-06-29 | 半導体装置 |
JP2022190079A Active JP7455935B2 (ja) | 2014-05-30 | 2022-11-29 | 半導体装置 |
JP2023207482A Pending JP2024028270A (ja) | 2014-05-30 | 2023-12-08 | 半導体装置及び発光装置 |
Country Status (6)
Country | Link |
---|---|
US (4) | US9553202B2 (ja) |
JP (6) | JP6487268B2 (ja) |
KR (4) | KR102582740B1 (ja) |
DE (1) | DE112014006711B4 (ja) |
TW (1) | TWI654759B (ja) |
WO (1) | WO2015182000A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108780757A (zh) * | 2016-03-22 | 2018-11-09 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
CN108780819A (zh) * | 2016-03-11 | 2018-11-09 | 株式会社半导体能源研究所 | 复合体及晶体管 |
WO2020136470A1 (ja) * | 2018-12-27 | 2020-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020113615A (ja) * | 2019-01-10 | 2020-07-27 | 株式会社ジャパンディスプレイ | 配線構造体、半導体装置、及び表示装置 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102472875B1 (ko) | 2013-12-26 | 2022-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9831238B2 (en) | 2014-05-30 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including insulating film having opening portion and conductive film in the opening portion |
KR20170013240A (ko) | 2014-05-30 | 2017-02-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 제조하기 위한 방법 |
US9455337B2 (en) | 2014-06-18 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP6417125B2 (ja) | 2014-06-25 | 2018-10-31 | 株式会社ジャパンディスプレイ | 半導体装置 |
US9647129B2 (en) | 2014-07-04 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9812587B2 (en) * | 2015-01-26 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20230141954A (ko) | 2015-02-12 | 2023-10-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
JP6705663B2 (ja) * | 2015-03-06 | 2020-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
KR20160114511A (ko) | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
US9806200B2 (en) | 2015-03-27 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9502435B2 (en) * | 2015-04-27 | 2016-11-22 | International Business Machines Corporation | Hybrid high electron mobility transistor and active matrix structure |
SG10201608814YA (en) | 2015-10-29 | 2017-05-30 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the semiconductor device |
US10714633B2 (en) | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US10090205B2 (en) * | 2016-02-08 | 2018-10-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin profile improvement for high performance transistor |
US10157748B2 (en) * | 2016-02-08 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin profile improvement for high performance transistor |
KR20180123028A (ko) | 2016-03-11 | 2018-11-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치 |
WO2017168283A1 (ja) | 2016-04-01 | 2017-10-05 | 株式会社半導体エネルギー研究所 | 複合酸化物半導体、当該複合酸化物半導体を用いた半導体装置、当該半導体装置を有する表示装置 |
US20170338252A1 (en) * | 2016-05-17 | 2017-11-23 | Innolux Corporation | Display device |
US10062636B2 (en) * | 2016-06-27 | 2018-08-28 | Newport Fab, Llc | Integration of thermally conductive but electrically isolating layers with semiconductor devices |
JP6751613B2 (ja) * | 2016-07-15 | 2020-09-09 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2018017360A2 (en) | 2016-07-19 | 2018-01-25 | Applied Materials, Inc. | High-k dielectric materials comprising zirconium oxide utilized in display devices |
US10147722B2 (en) | 2016-08-12 | 2018-12-04 | Renesas Electronics America Inc. | Isolated circuit formed during back end of line process |
US9929203B1 (en) | 2017-04-27 | 2018-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method for fabricating thereof |
DE112018002191T5 (de) * | 2017-04-28 | 2020-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung |
US9997567B1 (en) * | 2017-05-05 | 2018-06-12 | Macronix International Co., Ltd. | Semiconductors structure having an RRAM structure and method for forming the same |
KR102512106B1 (ko) * | 2017-09-01 | 2023-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
JP7163294B2 (ja) * | 2017-09-05 | 2022-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20200034083A (ko) * | 2018-09-20 | 2020-03-31 | 삼성디스플레이 주식회사 | 트랜지스터 기판, 이의 제조 방법, 및 이를 포함하는 표시 장치 |
US11382151B2 (en) | 2019-06-18 | 2022-07-05 | Qualcomm Incorporated | Truncated identification indicators |
KR20220084837A (ko) | 2020-12-14 | 2022-06-21 | 엘지디스플레이 주식회사 | 박막 트랜지스터 및 이를 포함하는 표시장치 |
KR20220125909A (ko) * | 2021-03-05 | 2022-09-15 | 삼성디스플레이 주식회사 | 표시 장치 |
US20230063670A1 (en) * | 2021-08-31 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company Limited | Contact etch stop layer for a pixel sensor |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02271657A (ja) * | 1989-04-13 | 1990-11-06 | Nec Corp | 能動層2層積層cmosインバータ |
JPH043455A (ja) * | 1990-04-19 | 1992-01-08 | Nec Corp | Soiトランジスタ積層半導体装置とその製造方法 |
JP2000208644A (ja) * | 1999-01-19 | 2000-07-28 | Semiconductor Energy Lab Co Ltd | Sramセル及びその製造方法 |
JP2009094495A (ja) * | 2007-09-21 | 2009-04-30 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2009152438A (ja) * | 2007-12-21 | 2009-07-09 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
JP2012146861A (ja) * | 2011-01-13 | 2012-08-02 | Toshiba Corp | 半導体記憶装置 |
JP2013179286A (ja) * | 2012-02-07 | 2013-09-09 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2013229587A (ja) * | 2012-03-28 | 2013-11-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び当該半導体装置を有する電子機器 |
JP2013243397A (ja) * | 2009-10-21 | 2013-12-05 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Family Cites Families (162)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0198243A (ja) * | 1987-10-12 | 1989-04-17 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH01268151A (ja) | 1988-04-20 | 1989-10-25 | Sharp Corp | 半導体装置 |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH0799286A (ja) | 1993-09-29 | 1995-04-11 | Toshiba Corp | 半導体装置 |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP2751893B2 (ja) | 1995-10-31 | 1998-05-18 | 日本電気株式会社 | 半導体記憶装置およびその製造方法 |
US5973369A (en) | 1997-03-11 | 1999-10-26 | Nec Corporation | SRAM having P-channel TFT as load element with less series-connected high resistance |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4103968B2 (ja) * | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP2004247373A (ja) * | 2003-02-12 | 2004-09-02 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
CN102856390B (zh) | 2004-03-12 | 2015-11-25 | 独立行政法人科学技术振兴机构 | 包含薄膜晶体管的lcd或有机el显示器的转换组件 |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP4802462B2 (ja) | 2004-07-27 | 2011-10-26 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板の製造方法 |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
BRPI0517560B8 (pt) | 2004-11-10 | 2018-12-11 | Canon Kk | transistor de efeito de campo |
EP1812969B1 (en) | 2004-11-10 | 2015-05-06 | Canon Kabushiki Kaisha | Field effect transistor comprising an amorphous oxide |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
WO2006051994A2 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Light-emitting device |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI472037B (zh) | 2005-01-28 | 2015-02-01 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5078246B2 (ja) * | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
EP1770788A3 (en) | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101112655B1 (ko) | 2005-11-15 | 2012-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액티브 매트릭스 디스플레이 장치 및 텔레비전 수신기 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
KR100803666B1 (ko) * | 2006-07-26 | 2008-02-19 | 삼성전자주식회사 | 스택형 반도체 장치 및 그 제조 방법 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
WO2008133345A1 (en) | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
KR101300820B1 (ko) * | 2007-07-24 | 2013-08-26 | 삼성전자주식회사 | 반도체 집적 회로 장치 및 그 제조 방법 |
US7982250B2 (en) | 2007-09-21 | 2011-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
FR2932005B1 (fr) * | 2008-06-02 | 2011-04-01 | Commissariat Energie Atomique | Circuit a transistor integres dans trois dimensions et ayant une tension de seuil vt ajustable dynamiquement |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
KR101969279B1 (ko) * | 2009-10-29 | 2019-04-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
SG10201910510UA (en) | 2009-10-29 | 2020-01-30 | Semiconductor Energy Lab | Semiconductor device |
WO2011058913A1 (en) | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101770976B1 (ko) | 2009-12-11 | 2017-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8780629B2 (en) * | 2010-01-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
WO2011135999A1 (en) | 2010-04-27 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
WO2011145468A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
WO2012002186A1 (en) | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2012019018A (ja) | 2010-07-07 | 2012-01-26 | Toshiba Corp | 半導体装置及びその製造方法 |
KR101842181B1 (ko) | 2010-08-04 | 2018-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2012256821A (ja) | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
TWI574259B (zh) | 2010-09-29 | 2017-03-11 | 半導體能源研究所股份有限公司 | 半導體記憶體裝置和其驅動方法 |
KR101924231B1 (ko) | 2010-10-29 | 2018-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
JP5312489B2 (ja) | 2011-01-12 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8513773B2 (en) | 2011-02-02 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Capacitor and semiconductor device including dielectric and N-type semiconductor |
TWI602249B (zh) | 2011-03-11 | 2017-10-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
US8941958B2 (en) * | 2011-04-22 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20130040706A (ko) * | 2011-10-14 | 2013-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US8981367B2 (en) * | 2011-12-01 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9099560B2 (en) | 2012-01-20 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5981157B2 (ja) | 2012-02-09 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6034048B2 (ja) * | 2012-04-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
US9006024B2 (en) * | 2012-04-25 | 2015-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP6035195B2 (ja) | 2012-05-01 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP6077382B2 (ja) * | 2012-05-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
US8929128B2 (en) * | 2012-05-17 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Storage device and writing method of the same |
US9817032B2 (en) * | 2012-05-23 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Measurement device |
WO2013179922A1 (en) * | 2012-05-31 | 2013-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9083327B2 (en) | 2012-07-06 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
WO2014024808A1 (en) | 2012-08-10 | 2014-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6013084B2 (ja) * | 2012-08-24 | 2016-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
DE112013005029T5 (de) | 2012-10-17 | 2015-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Mikrocontroller und Herstellungsverfahren dafür |
JP6283191B2 (ja) * | 2012-10-17 | 2018-02-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6335616B2 (ja) | 2013-04-30 | 2018-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102222344B1 (ko) | 2013-05-02 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN105190902B (zh) | 2013-05-09 | 2019-01-29 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
WO2015060133A1 (en) * | 2013-10-22 | 2015-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102472875B1 (ko) * | 2013-12-26 | 2022-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20230065379A (ko) * | 2013-12-27 | 2023-05-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102325158B1 (ko) * | 2014-01-30 | 2021-11-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법 |
JP6542542B2 (ja) * | 2014-02-28 | 2019-07-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6442321B2 (ja) * | 2014-03-07 | 2018-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法、並びに電子機器 |
JP6545976B2 (ja) * | 2014-03-07 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6509596B2 (ja) * | 2014-03-18 | 2019-05-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20170013240A (ko) * | 2014-05-30 | 2017-02-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 제조하기 위한 방법 |
US9831238B2 (en) * | 2014-05-30 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including insulating film having opening portion and conductive film in the opening portion |
JP6537892B2 (ja) * | 2014-05-30 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
US9647129B2 (en) * | 2014-07-04 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2014
- 2014-09-09 KR KR1020227016031A patent/KR102582740B1/ko active IP Right Grant
- 2014-09-09 DE DE112014006711.3T patent/DE112014006711B4/de active Active
- 2014-09-09 KR KR1020167032266A patent/KR102259172B1/ko active IP Right Grant
- 2014-09-09 KR KR1020217015986A patent/KR102398950B1/ko active Application Filing
- 2014-09-09 KR KR1020237032350A patent/KR20230140605A/ko not_active Application Discontinuation
- 2014-09-09 WO PCT/JP2014/074337 patent/WO2015182000A1/en active Application Filing
- 2014-09-15 TW TW103131752A patent/TWI654759B/zh not_active IP Right Cessation
- 2014-09-17 US US14/489,074 patent/US9553202B2/en active Active
-
2015
- 2015-05-14 JP JP2015098705A patent/JP6487268B2/ja active Active
-
2016
- 2016-12-21 US US15/386,017 patent/US10658389B2/en active Active
-
2019
- 2019-02-21 JP JP2019029473A patent/JP6695462B2/ja active Active
-
2020
- 2020-04-21 JP JP2020075362A patent/JP2020161822A/ja not_active Withdrawn
- 2020-05-18 US US16/876,286 patent/US11282860B2/en active Active
-
2021
- 2021-12-21 US US17/557,185 patent/US20220115409A1/en active Pending
-
2022
- 2022-06-29 JP JP2022104759A patent/JP7337233B2/ja active Active
- 2022-11-29 JP JP2022190079A patent/JP7455935B2/ja active Active
-
2023
- 2023-12-08 JP JP2023207482A patent/JP2024028270A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02271657A (ja) * | 1989-04-13 | 1990-11-06 | Nec Corp | 能動層2層積層cmosインバータ |
JPH043455A (ja) * | 1990-04-19 | 1992-01-08 | Nec Corp | Soiトランジスタ積層半導体装置とその製造方法 |
JP2000208644A (ja) * | 1999-01-19 | 2000-07-28 | Semiconductor Energy Lab Co Ltd | Sramセル及びその製造方法 |
JP2009094495A (ja) * | 2007-09-21 | 2009-04-30 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2009152438A (ja) * | 2007-12-21 | 2009-07-09 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
JP2013243397A (ja) * | 2009-10-21 | 2013-12-05 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2012146861A (ja) * | 2011-01-13 | 2012-08-02 | Toshiba Corp | 半導体記憶装置 |
JP2013179286A (ja) * | 2012-02-07 | 2013-09-09 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2013229587A (ja) * | 2012-03-28 | 2013-11-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び当該半導体装置を有する電子機器 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102513161B1 (ko) * | 2016-03-11 | 2023-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합체 및 트랜지스터 |
US11417771B2 (en) | 2016-03-11 | 2022-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Composite and transistor |
KR20220017533A (ko) * | 2016-03-11 | 2022-02-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합체 및 트랜지스터 |
JP2019149568A (ja) * | 2016-03-11 | 2019-09-05 | 株式会社半導体エネルギー研究所 | トランジスタ |
CN108780819B (zh) * | 2016-03-11 | 2022-06-14 | 株式会社半导体能源研究所 | 复合体及晶体管 |
US11869980B2 (en) | 2016-03-11 | 2024-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Composite and transistor |
JP2022010133A (ja) * | 2016-03-11 | 2022-01-14 | 株式会社半導体エネルギー研究所 | 複合酸化物半導体 |
JP7258108B2 (ja) | 2016-03-11 | 2023-04-14 | 株式会社半導体エネルギー研究所 | 複合酸化物半導体 |
KR20180123501A (ko) * | 2016-03-11 | 2018-11-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합체 및 트랜지스터 |
CN108780819A (zh) * | 2016-03-11 | 2018-11-09 | 株式会社半导体能源研究所 | 复合体及晶体管 |
KR102358289B1 (ko) * | 2016-03-11 | 2022-02-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합체 및 트랜지스터 |
US11489076B2 (en) | 2016-03-22 | 2022-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
CN108780757A (zh) * | 2016-03-22 | 2018-11-09 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
US11721769B2 (en) | 2016-03-22 | 2023-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the same |
WO2020136470A1 (ja) * | 2018-12-27 | 2020-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7263013B2 (ja) | 2019-01-10 | 2023-04-24 | 株式会社ジャパンディスプレイ | 配線構造体、半導体装置、及び表示装置 |
JP2020113615A (ja) * | 2019-01-10 | 2020-07-27 | 株式会社ジャパンディスプレイ | 配線構造体、半導体装置、及び表示装置 |
Also Published As
Publication number | Publication date |
---|---|
JP7337233B2 (ja) | 2023-09-01 |
JP2022125146A (ja) | 2022-08-26 |
JP6487268B2 (ja) | 2019-03-20 |
US10658389B2 (en) | 2020-05-19 |
JP2024028270A (ja) | 2024-03-04 |
KR102582740B1 (ko) | 2023-09-26 |
JP2019087761A (ja) | 2019-06-06 |
KR20220066208A (ko) | 2022-05-23 |
DE112014006711T5 (de) | 2017-02-16 |
US20200321360A1 (en) | 2020-10-08 |
KR20230140605A (ko) | 2023-10-06 |
KR20170015292A (ko) | 2017-02-08 |
US20220115409A1 (en) | 2022-04-14 |
TWI654759B (zh) | 2019-03-21 |
JP2020161822A (ja) | 2020-10-01 |
WO2015182000A1 (en) | 2015-12-03 |
KR102259172B1 (ko) | 2021-06-01 |
US20170117299A1 (en) | 2017-04-27 |
US9553202B2 (en) | 2017-01-24 |
DE112014006711B4 (de) | 2021-01-21 |
JP7455935B2 (ja) | 2024-03-26 |
US11282860B2 (en) | 2022-03-22 |
US20150349127A1 (en) | 2015-12-03 |
KR102398950B1 (ko) | 2022-05-17 |
TW201545351A (zh) | 2015-12-01 |
KR20210064428A (ko) | 2021-06-02 |
JP6695462B2 (ja) | 2020-05-20 |
JP2023016908A (ja) | 2023-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7455935B2 (ja) | 半導体装置 | |
JP6728452B2 (ja) | 半導体装置 | |
JP7358599B2 (ja) | 半導体装置 | |
JP6526427B2 (ja) | 半導体装置の作製方法 | |
JP2015144267A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180514 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180514 |
|
TRDD | Decision of grant or rejection written | ||
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190117 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190122 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190221 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6487268 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |