JP2016006773A - プラズマ源、及びプラズマ強化化学蒸着を利用して薄膜被覆を堆積させる方法 - Google Patents
プラズマ源、及びプラズマ強化化学蒸着を利用して薄膜被覆を堆積させる方法 Download PDFInfo
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- JP2016006773A JP2016006773A JP2015134112A JP2015134112A JP2016006773A JP 2016006773 A JP2016006773 A JP 2016006773A JP 2015134112 A JP2015134112 A JP 2015134112A JP 2015134112 A JP2015134112 A JP 2015134112A JP 2016006773 A JP2016006773 A JP 2016006773A
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- electron emission
- plasma
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- 238000000034 method Methods 0.000 title claims description 42
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
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- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
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- C03C17/245—Oxides by deposition from the vapour phase
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32036—AC powered
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3328—Problems associated with coating adhesion, stress, lift-off of deposited films
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
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Abstract
【解決手段】第一の電子放出面51及び第二の電子放出面52を備え、各電子放出面51,52は正負が交互に入れ替わる電圧を供給する電源に電気的に接続され、各電子放出面51,52は、ガスを含む空間によって隔てられ、第二の電子放出面52に供給される電圧は、第一の電子放出面51に供給される電圧と位相がずれており、二次電子を備える電流は電子放出面51,52の間に流れ、プラズマは電子放出面51,52の間に作られ、前記プラズマは線状であり、少なくとも長さ約0.5メートルであり、閉回路電子ドリフトが実質的に存在しない状態でプラズマの長さにわたって略均一に作られる。
【選択図】図2
Description
本出願は、2008年8月4日に出願された米国仮特許出願第61/137,839号の利益を主張すると共に、その全内容を参照により本出願に援用する。
図5のPECVD装置から作られる二酸化シリコン被覆が以下に説明される。PECVD装置は、全長約150mm、幅約50mmである。中空陰極電極の底部からガラス基板の上面までの距離は、11mmに固定された。全部で4つの中空陰極が隣接して配置され、AC電源に接続された。前駆体ガスは、供給管36を経由して暗い空間33に、100sccmの割合で供給された。前駆体ガスは、テトラメチルジシロキサン(tetramethyldisiloxane)100%であった。反応ガスは、供給管35を経由して中空陰極空間に供給された。反応ガスは、酸素100%であり、300sccmの割合で供給された。基板11は、ソーダ石灰フロートガラスの一部分であり、図5のPECVD源の下に静止して保持された。使用されたAC電源供給源は、アドバンスドエナジー社のPE−II、40kHzのAC電源供給源であった。基板11上の被覆された領域の大きさは50mm×100mmであった。被覆プロセスの結果を表1に示す。
Claims (44)
- 第一の電子放出面及び第二の電子放出面を備え、
前記各電子放出面は正負が交互に入れ替わる電圧を供給する電源に電気的に接続され、
前記各電子放出面は、ガスを含む空間によって隔てられ、
前記第二の電子放出面に供給される電圧は、 前記第一の電子放出面に供給される電圧と位相がずれており、
二次電子を備える電流は前記電子放出面の間に流れ、
プラズマは前記電子放出面の間に作られ、前記プラズマは線状であり、少なくとも長さ約0.5メートルであり、閉回路電子ドリフトが実質的に存在しない状態でプラズマの長さにわたって略均一に作られる、プラズマ源。 - 前記各電子放出面は、互いに少なくとも約1ミリメートルから少なくとも約0.5メートル離れている、請求項1に記載のプラズマ源。
- 前記プラズマ源によって作られる前記プラズマは、長さが少なくとも約一メートルである、請求項1に記載のプラズマ源。
- 前記各電子放出面は、少なくとも約600℃から少なくとも約2000℃である、請求項1に記載のプラズマ源。
- 前記各電子放出面は、少なくとも約800℃から少なくとも約1200℃である、請求項4に記載のプラズマ源。
- 前記電流は前記各電子放出面に配置されたオリフィス又は限られた開口を通って流れる、請求項1に記載のプラズマ源。
- 前記ガスを含む空間は、前駆体ガス、反応ガス又はそれらの組み合わせを含む、請求項1に記載のプラズマ源。
- 前記前駆体ガスは、金属、遷移金属、ホウ素、炭素、シリコンゲルマニウム、セレン、又はそれらの組み合わせを備える、請求項7に記載のプラズマ源。
- 前記反応ガスは、酸素、窒素、ハロゲン、水素又はそれらの組み合わせを備える、請求項7に記載のプラズマ源。
- 前記プラズマ源は、少なくとも約0.2μm/秒の堆積率で被膜を生成することができる、請求項1に記載のプラズマ源。
- 前記プラズマ源は、少なくとも約0.3μm/秒の堆積率で被膜を生成することができる、請求項1に記載のプラズマ源。
- 前記プラズマ源は、少なくとも約0.5μm/秒の堆積率で被膜を生成することができる、請求項1に記載のプラズマ源。
- 請求項1に記載のプラズマ源によって生成される被膜。
- 複数対の電子放出面を備え、各対は第一の電子放出面及び第二の電子放出面を備え、
前記複数対の電子放出面は配列に隣接して配置され、
電子放出面の各対はガスを含む空間によって隔てられ、
電子放出面の各対は、正負が交互に入れ替わる電圧を供給する電源に電気的に接続され、
各対の前記第二の電子放出面に供給される前記電圧は、各対の前記第一の電子放出面に供給される前記電圧と位相がずれており、
二次電子を備える電流は各対の前記電子放出面の間に流れ、
二次元のプラズマは、各対の前記電子放出面の間に作られた前記プラズマによって形成され、
前記二次元のプラズマは、長さが少なくとも約0.5メートルであり、閉回路電子ドリフトが実質的に存在しない状態で二次元に略均一に作られる、プラズマ源。 - 各対の前記電子放出面は互いに少なくとも約1ミリメートルから少なくとも約0.5メートル離れている、請求項14に記載のプラズマ源。
- 前記二次元のプラズマによって作られる前記プラズマ源は、長さが少なくとも約一メートルである、請求項14に記載のプラズマ源。
- 各対の前記電子放出面は少なくとも約600℃から少なくとも約2000℃である、請求項14に記載のプラズマ源。
- 各対の前記電子放出面は少なくとも約800℃から少なくとも約1200℃である、請求項17に記載のプラズマ源。
- 前記電流は、各対の前記各電子放出面に配置されたオリフィス又は限られた開口を通って流れる、請求項14に記載のプラズマ源。
- 前記ガスを含む空間は、前駆体ガス、反応ガスまたはそれらの組み合わせを含む、請求項14に記載のプラズマ源。
- 前記前駆体ガスは、金属、遷移金属、ホウ素、炭素、シリコンゲルマニウム、セレン又はそれらの組み合わせを備える、請求項20に記載のプラズマ源。
- 前記反応ガスは、酸素、窒素、ハロゲン、水素又はそれらの組み合わせを備える、請求項20に記載のプラズマ源。
- 前記プラズマ源は、少なくとも約0.2μm/秒の堆積率で被膜を生成することができる、請求項14に記載のプラズマ源。
- 前記プラズマ源は、少なくとも約0.3μm/秒の堆積率で被膜を生成することができる、請求項14に記載のプラズマ源。
- 前記プラズマ源は、少なくとも約0.5μm/秒の堆積率で被膜を生成することができる、請求項14に記載のプラズマ源。
- 請求項14に記載のプラズマ源によって生成される被膜。
- 第一の電子放出面と第二の電子放出面、及び少なくとも二つの磁極を備え、
前記各電子放出面は正負が交互に入れ替わる電圧を供給する電源に電気的に接続され、
前記各電子放出面はガスを含む空間によって隔てられ、
前記第二の電子放出面に供給される前記電圧は、前記第一の電子放出面に供給される前記電圧と位相がずれており、
二次電子を備える電流は前記電子放出面の間に流れ、
前記少なくとも二つの磁極は、前記電子放出面の間に作られたプラズマを曲げる及び/又は高密度化するように位置する、プラズマ源。 - 請求項27に記載のプラズマ源によって生成される被膜。
- 第一の電子放出面と第二の電子放出面、及び少なくとも一つの電極を備え、
前記電子放出面は正負が交互に入れ替わる電圧を供給する第一の電源に電気的に接続され、
前記少なくとも一つの電極は、前記第一及び第二の電子放出面に供給される前記電圧と異なる電圧を供給する第二の電源に接続され、
前記各電子放出面はガスを含む空間によって隔てられ、
前記第二の電子放出面に供給される前記電圧は、前記第一の電子放出面に供給される前記電圧と位相がずれており、
二次電子を備える電流は前記電子放出面の間に流れ、
前記少なくとも一つの電極が負にパルス化される場合、正イオンは前記少なくとも一つの電極の表面に向かって加速する、プラズマ源。 - 請求項29に記載のプラズマ源によって生成される被覆。
- a)線状及び長さが少なくとも約0.5メートルで、閉回路電子ドリフトが実質的に存在しない状態でその長さにわたって略均一に作られるプラズマを提供することと、
b)前記プラズマに近接して前駆体及び/又は反応ガスを提供することと、
c)被覆されるべき少なくとも一つの表面を有する基板を前記プラズマに近接して提供することと、
d)前記基板の前記少なくとも一つの表面上に前記ガスを堆積させて被膜を形成することと
を備える被膜を形成する方法。 - 前記被膜は少なくとも約0.2μm/秒の堆積率で堆積する、請求項31に記載の方法。
- 前記被膜は少なくとも約0.3μm/秒の堆積率で堆積する、請求項32に記載の方法。
- 前記被膜は少なくとも約0.5μm/秒の堆積率で堆積する、請求項33に記載の方法。
- a)二次元及び長さが少なくとも約0.5メートルであり、閉回路電子ドリフトが実質的に存在しない状態で二次元に略均一に作られるプラズマを提供することと、
b)前記プラズマに近接して前駆体及び/又は反応ガスを提供することと、
c)被覆されるべき少なくとも一つの表面を有する基板を前記プラズマに近接して提供することと、
d)前記基板の前記少なくとも一つの表面上に前記ガスを堆積させて被膜を形成することと
を備える被膜を形成する方法。 - 前記被膜は少なくとも約0.2μm/秒の堆積率で堆積する、請求項35に記載の方法。
- 前記被膜は少なくとも約0.3μm/秒の堆積率で堆積する、請求項36に記載の方法。
- 前記被膜は少なくとも約0.5μm/秒の堆積率で堆積する、請求項37に記載の方法。
- a)線状及び長さが少なくとも約0.5メートルであり、閉回路電子ドリフトが実質的に存在しない状態でその長さにわたって略均一に作られるプラズマを提供することと、
b)前記プラズマに近接した少なくとも二つの磁極を提供することと
を備え、
前記少なくとも二つの磁極は前記プラズマを曲げる及び/又は高密度化するように位置する、
プラズマを曲げる及び/又は高密度化する方法。 - a)第一の電子放出面及び第二の電子放出面を提供することと、
b)少なくとも一つの電極を提供することと、
c)被覆されるべき少なくとも一つの表面を有する基板を提供することと、
d)前記電子放出面を正負が交互に入れ替わる電圧を供給する第一の電源に接続することと、
e)前記少なくとも一つの追加の電極を前記第一及び第二の電子放出面に供給される前記電圧と異なる電圧を供給する第二の電源に接続することと、
f)正イオンが前記少なくとも一つの追加の電極に向かって加速するように前記少なくとも一つの電極を負にパルス化することと
を備え、
前記正イオンが接触した際に、原子が前記少なくとも一つの電極から放出され、被覆されるべき前記基板の前記表面に向けられる、
被膜を形成する方法。 - 前記電子放出面は多孔性物質を含む、請求項1に記載のプラズマ源。
- 前記電子放出面は多孔性物質を含む、請求項14に記載のプラズマ源。
- 前記電子放出面は多孔性物質を含む、請求項27に記載のプラズマ源。
- 前記電子放出面は多孔性物質を含む、請求項29に記載のプラズマ源。
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