EA201400545A1 - Способ нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы (варианты) - Google Patents
Способ нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы (варианты)Info
- Publication number
- EA201400545A1 EA201400545A1 EA201400545A EA201400545A EA201400545A1 EA 201400545 A1 EA201400545 A1 EA 201400545A1 EA 201400545 A EA201400545 A EA 201400545A EA 201400545 A EA201400545 A EA 201400545A EA 201400545 A1 EA201400545 A1 EA 201400545A1
- Authority
- EA
- Eurasian Patent Office
- Prior art keywords
- plasma
- gas phase
- film coatings
- options
- chemical deposition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32596—Hollow cathodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2456—Coating containing TiO2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32036—AC powered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3328—Problems associated with coating adhesion, stress, lift-off of deposited films
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
Abstract
В заявке описаны способы формирования покрытия с использованием плазменно-химического осаждения из газовой фазы с использованием плазмы линейной или двумерной формы при, по существу, отсутствии тока Холла. При этом обеспечивается образование химической связи или конденсирование на поверхности подложки химического фрагмента газа-прекурсора, содержащего нужный химический элемент для покрытия, или формируются конденсируемые молекулярные образования, которые сцепляются по меньшей мере с одной поверхностью подложки. Предложенные способы обеспечивают эффективный процесс получения тонкопленочных покрытий.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13783908P | 2008-08-04 | 2008-08-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
EA201400545A1 true EA201400545A1 (ru) | 2014-08-29 |
EA030379B1 EA030379B1 (ru) | 2018-07-31 |
Family
ID=41608578
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EA201100298A EA020763B9 (ru) | 2008-08-04 | 2009-08-04 | Источник плазмы и способы нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы |
EA201400544A EA030378B1 (ru) | 2008-08-04 | 2009-08-04 | Источник плазмы для нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы (варианты) |
EA201400545A EA030379B1 (ru) | 2008-08-04 | 2009-08-04 | Способ нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы (варианты) |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EA201100298A EA020763B9 (ru) | 2008-08-04 | 2009-08-04 | Источник плазмы и способы нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы |
EA201400544A EA030378B1 (ru) | 2008-08-04 | 2009-08-04 | Источник плазмы для нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы (варианты) |
Country Status (11)
Country | Link |
---|---|
US (5) | US8652586B2 (ru) |
EP (1) | EP2316252B1 (ru) |
JP (9) | JP2011530155A (ru) |
KR (1) | KR101602517B1 (ru) |
CN (5) | CN105177526B (ru) |
AR (1) | AR072911A1 (ru) |
BR (1) | BRPI0916880B1 (ru) |
EA (3) | EA020763B9 (ru) |
PH (4) | PH12015500541B1 (ru) |
TW (3) | TWI532414B (ru) |
WO (1) | WO2010017185A1 (ru) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8377209B2 (en) * | 2008-03-12 | 2013-02-19 | Applied Materials, Inc. | Linear plasma source for dynamic (moving substrate) plasma processing |
KR101602517B1 (ko) | 2008-08-04 | 2016-03-10 | 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 | Pecvd를 이용한 박막 코팅을 증착하기 위한 플라즈마 소스 및 방법 |
EP2368257A4 (en) * | 2008-12-08 | 2016-03-09 | Gen Plasma Inc | MAGNETIC FIELD ION SOURCE DEVICE WITH CLOSED DRIFT AND SELF-CLEANING ANODE AND METHOD OF SUBSTRATE MODIFICATION THEREWITH |
ES2513866T3 (es) | 2009-05-13 | 2014-10-27 | Sio2 Medical Products, Inc. | Revestimiento e inspección de recipientes |
US9545360B2 (en) | 2009-05-13 | 2017-01-17 | Sio2 Medical Products, Inc. | Saccharide protective coating for pharmaceutical package |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
US8651158B2 (en) * | 2009-11-17 | 2014-02-18 | The United States Of America, As Represented By The Secretary Of The Navy | Processing microtitre plates for covalent immobilization chemistries |
US20110207301A1 (en) * | 2010-02-19 | 2011-08-25 | Kormanyos Kenneth R | Atmospheric pressure chemical vapor deposition with saturation control |
DE102010011592A1 (de) * | 2010-03-16 | 2011-09-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hohlkathoden-Plasmaquelle sowie Verwendung der Hohlkathoden-Plasmaquelle |
US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
WO2011156876A1 (en) * | 2010-06-18 | 2011-12-22 | Mahle Metal Leve S/A | Plasma processing device |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
US8723423B2 (en) | 2011-01-25 | 2014-05-13 | Advanced Energy Industries, Inc. | Electrostatic remote plasma source |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
US9111728B2 (en) | 2011-04-11 | 2015-08-18 | Lam Research Corporation | E-beam enhanced decoupled source for semiconductor processing |
US8980046B2 (en) | 2011-04-11 | 2015-03-17 | Lam Research Corporation | Semiconductor processing system with source for decoupled ion and radical control |
US8900403B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
US20120255678A1 (en) * | 2011-04-11 | 2012-10-11 | Lam Research Corporation | Multi-Frequency Hollow Cathode System for Substrate Plasma Processing |
US20120258555A1 (en) * | 2011-04-11 | 2012-10-11 | Lam Research Corporation | Multi-Frequency Hollow Cathode and Systems Implementing the Same |
BE1019991A3 (fr) * | 2011-05-25 | 2013-03-05 | Agc Glass Europe | Procede de depot de couches sur un substrat verrier par pecvd a faible pression. |
US8617350B2 (en) * | 2011-06-15 | 2013-12-31 | Belight Technology Corporation, Limited | Linear plasma system |
US10225919B2 (en) * | 2011-06-30 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | Projected plasma source |
US9604877B2 (en) * | 2011-09-02 | 2017-03-28 | Guardian Industries Corp. | Method of strengthening glass using plasma torches and/or arc jets, and articles made according to the same |
JP6095678B2 (ja) | 2011-11-11 | 2017-03-15 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | 薬剤パッケージ用の不動態化、pH保護又は滑性皮膜、被覆プロセス及び装置 |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
US11149370B2 (en) * | 2012-09-19 | 2021-10-19 | Apjet, Inc. | Atmospheric-pressure plasma processing apparatus and method |
KR101557341B1 (ko) * | 2012-09-26 | 2015-10-06 | (주)비엠씨 | 플라즈마 화학 기상 증착 장치 |
WO2014071061A1 (en) | 2012-11-01 | 2014-05-08 | Sio2 Medical Products, Inc. | Coating inspection method |
PL2915902T3 (pl) | 2012-11-02 | 2020-08-24 | AGC Inc. | Źródło plazmy dla plazmowego urządzenia CVD i sposób wytwarzania przedmiotu przy użyciu źródła plazmy |
EP2920567B1 (en) | 2012-11-16 | 2020-08-19 | SiO2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
EP2925903B1 (en) | 2012-11-30 | 2022-04-13 | Si02 Medical Products, Inc. | Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like |
US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
EP2961858B1 (en) | 2013-03-01 | 2022-09-07 | Si02 Medical Products, Inc. | Coated syringe. |
US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
EP2971228B1 (en) | 2013-03-11 | 2023-06-21 | Si02 Medical Products, Inc. | Coated packaging |
US9863042B2 (en) | 2013-03-15 | 2018-01-09 | Sio2 Medical Products, Inc. | PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases |
EA029123B1 (ru) | 2013-05-30 | 2018-02-28 | Агк Гласс Юроп | Солнцезащитное остекление |
WO2015103358A1 (en) | 2014-01-05 | 2015-07-09 | Applied Materials, Inc. | Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition |
EP3693493A1 (en) | 2014-03-28 | 2020-08-12 | SiO2 Medical Products, Inc. | Antistatic coatings for plastic vessels |
US9284210B2 (en) * | 2014-03-31 | 2016-03-15 | Corning Incorporated | Methods and apparatus for material processing using dual source cyclonic plasma reactor |
MY191327A (en) | 2014-12-05 | 2022-06-16 | Agc Flat Glass Na Inc | Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces |
CN107852805B (zh) * | 2014-12-05 | 2020-10-16 | Agc玻璃欧洲公司 | 空心阴极等离子体源 |
JP2018028109A (ja) * | 2014-12-22 | 2018-02-22 | 旭硝子株式会社 | プラズマcvd装置 |
EP3307030B1 (en) * | 2015-06-02 | 2020-04-29 | FUJI Corporation | Plasma generating device |
CN116982977A (zh) | 2015-08-18 | 2023-11-03 | Sio2医药产品公司 | 具有低氧气传输速率的药物和其他包装 |
US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
KR20180095530A (ko) * | 2015-11-16 | 2018-08-27 | 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 | 다중 위상 교류 또는 펄스 전류에 의해 구동되는 플라즈마 장치 및 플라즈마 생성 방법 |
US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
KR20180103909A (ko) | 2015-12-18 | 2018-09-19 | 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 | 중공 캐소드 이온 소스 및 이온의 추출 및 가속 방법 |
US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
TWI733712B (zh) * | 2015-12-18 | 2021-07-21 | 美商應用材料股份有限公司 | 用於沉積腔室的擴散器及用於沉積腔室的電極 |
US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
JP2019508852A (ja) * | 2016-02-17 | 2019-03-28 | イノヘンス カンパニー リミテッドInnohance Co.,Ltd | プラズマ処理装置用カソード |
BR102016006786B1 (pt) * | 2016-03-28 | 2023-04-18 | Scholtz E Fontana Consultoria Ltda - Me | Método de densificação de plasma |
DE102016117281A1 (de) | 2016-09-14 | 2018-03-15 | Kiekert Ag | Kraftfahrzeugtürschloss |
US10981193B2 (en) * | 2017-04-05 | 2021-04-20 | Nova Engineering Films, Inc. | Depositing of material by spraying precursor using supercritical fluid |
EP3399538A1 (en) | 2017-05-03 | 2018-11-07 | AGC Glass Europe | Segmented hollow cathode |
US11851763B2 (en) * | 2017-06-23 | 2023-12-26 | General Electric Company | Chemical vapor deposition during additive manufacturing |
WO2020127256A1 (en) * | 2018-12-21 | 2020-06-25 | Agc Glass Europe | Method for coating metal |
WO2021058547A1 (en) | 2019-09-23 | 2021-04-01 | Agc Glass Europe | Fabric substrate bearing a carbon based coating and process for making the same |
CN114829670A (zh) * | 2019-12-19 | 2022-07-29 | 旭硝子欧洲玻璃公司 | 氧化硅涂覆的聚合物膜以及用于生产其的低压pecvd方法 |
CN115349031A (zh) * | 2020-01-31 | 2022-11-15 | 旭硝子欧洲玻璃公司 | 耐久的装饰性涂覆的基材及其获得方法 |
EP4291702A1 (en) | 2021-02-12 | 2023-12-20 | AGC Glass Europe | Method of coating onto fabric substrates by means of plasma |
CN116806279A (zh) | 2021-02-12 | 2023-09-26 | 旭硝子欧洲玻璃公司 | 使用由空心阴极产生的等离子体在纺织品基材上产生防水涂层的方法 |
US20230047186A1 (en) * | 2021-08-13 | 2023-02-16 | Nano-Master, Inc. | Apparatus and Methods for Roll-to-Roll (R2R) Plasma Enhanced/Activated Atomic Layer Deposition (PEALD/PAALD) |
WO2024028174A1 (en) | 2022-08-04 | 2024-02-08 | Agc Glass Europe | Decoratively coated polymer substrates and process for obtaining the same |
WO2024028173A1 (en) | 2022-08-04 | 2024-02-08 | Agc Glass Europe | Boron doped silicon oxide protective layer and method for making the same |
CN116855915B (zh) * | 2023-06-29 | 2024-01-30 | 广州今泰科技股份有限公司 | 一种大面积dlc镀层均匀沉积方法 |
Family Cites Families (172)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2920235A (en) | 1958-07-24 | 1960-01-05 | Persa R Bell | Method and apparatus for producing intense energetic gas discharges |
NL283468A (ru) | 1961-09-27 | |||
US3381157A (en) | 1964-12-10 | 1968-04-30 | United Aircraft Corp | Annular hollow cathode discharge apparatus |
GB1257015A (ru) | 1967-11-03 | 1971-12-15 | ||
US3813549A (en) | 1972-12-26 | 1974-05-28 | Ibm | Self-healing electrode for uniform negative corona |
US4196233A (en) | 1974-02-07 | 1980-04-01 | Ciba-Geigy Corporation | Process for coating inorganic substrates with carbides, nitrides and/or carbonitrides |
US4017808A (en) | 1975-02-10 | 1977-04-12 | Owens-Illinois, Inc. | Gas laser with sputter-resistant cathode |
JPS5844608A (ja) * | 1981-09-09 | 1983-03-15 | 住友電気工業株式会社 | 無機絶縁超電導導体の製造方法 |
US4422014A (en) | 1981-11-12 | 1983-12-20 | David Glaser | Method and apparatus for obtaining a focusable beam of electrons from a gaseous hollow-cathode discharge |
US4419203A (en) | 1982-03-05 | 1983-12-06 | International Business Machines Corporation | Apparatus and method for neutralizing ion beams |
DE3222436A1 (de) | 1982-06-15 | 1983-12-15 | Kernforschungsanlage Jülich GmbH, 5170 Jülich | Verfahren zur herstellung einer wolframcarbidaktivierten elektrode |
JPS59228338A (ja) | 1983-06-10 | 1984-12-21 | Mitsubishi Electric Corp | ホロ−カソ−ド |
JPS61238962A (ja) * | 1985-04-16 | 1986-10-24 | Matsushita Electric Ind Co Ltd | 膜形成装置 |
JPS61251021A (ja) | 1985-04-26 | 1986-11-08 | Fujitsu Ltd | 成膜装置 |
JPS63297560A (ja) | 1987-05-29 | 1988-12-05 | Matsushita Electric Ind Co Ltd | 薄膜の製造方法 |
US4916356A (en) | 1988-09-26 | 1990-04-10 | The United States Of America As Represented By The Secretary Of The Air Force | High emissivity cold cathode ultrastructure |
DE3832693A1 (de) | 1988-09-27 | 1990-03-29 | Leybold Ag | Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe |
US5028791A (en) * | 1989-02-16 | 1991-07-02 | Tokyo Electron Ltd. | Electron beam excitation ion source |
FR2643087B1 (fr) | 1989-02-16 | 1991-06-07 | Unirec | Procede de depot d'un revetement de type ceramique sur un substrat metallique et element comportant un revetement obtenu par ce procede |
US5185132A (en) | 1989-12-07 | 1993-02-09 | Research Development Corporation Of Japan | Atomspheric plasma reaction method and apparatus therefor |
JP2537304B2 (ja) * | 1989-12-07 | 1996-09-25 | 新技術事業団 | 大気圧プラズマ反応方法とその装置 |
US5437778A (en) | 1990-07-10 | 1995-08-01 | Telic Technologies Corporation | Slotted cylindrical hollow cathode/magnetron sputtering device |
JP3061288B2 (ja) * | 1990-11-13 | 2000-07-10 | 株式会社日立製作所 | プラズマ処理装置 |
DE4039930A1 (de) | 1990-12-14 | 1992-06-17 | Leybold Ag | Vorrichtung fuer plasmabehandlung |
US5330606A (en) | 1990-12-14 | 1994-07-19 | Matsushita Electric Industrial Co., Ltd. | Plasma source for etching |
DE4109619C1 (ru) | 1991-03-23 | 1992-08-06 | Leybold Ag, 6450 Hanau, De | |
DE69229083T2 (de) | 1991-07-18 | 1999-11-11 | Mitsubishi Heavy Ind Ltd | Sputteranlage und Ionenquelle |
US5286534A (en) | 1991-12-23 | 1994-02-15 | Minnesota Mining And Manufacturing Company | Process for plasma deposition of a carbon rich coating |
JPH05226258A (ja) * | 1992-02-13 | 1993-09-03 | Applied Materials Japan Kk | プラズマ発生装置 |
FR2693770B1 (fr) | 1992-07-15 | 1994-10-14 | Europ Propulsion | Moteur à plasma à dérive fermée d'électrons. |
DE4236264C1 (ru) * | 1992-10-27 | 1993-09-02 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De | |
CA2126731A1 (en) | 1993-07-12 | 1995-01-13 | Frank Jansen | Hollow cathode array and method of cleaning sheet stock therewith |
DE4336681C2 (de) | 1993-10-27 | 1996-10-02 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zum plasmaaktivierten Elektronenstrahlverdampfen |
JPH07226395A (ja) | 1994-02-15 | 1995-08-22 | Matsushita Electric Ind Co Ltd | 真空プラズマ処理装置 |
DE4412906C1 (de) | 1994-04-14 | 1995-07-13 | Fraunhofer Ges Forschung | Verfahren und Einrichtung für die ionengestützte Vakuumbeschichtung |
SE9403988L (sv) * | 1994-11-18 | 1996-04-01 | Ladislav Bardos | Apparat för alstring av linjär ljusbågsurladdning för plasmabearbetning |
DE19505268C2 (de) | 1995-02-16 | 1999-02-18 | Fraunhofer Ges Forschung | CVD-Verfahren zur Beschichtung von Substratoberflächen |
US5686789A (en) | 1995-03-14 | 1997-11-11 | Osram Sylvania Inc. | Discharge device having cathode with micro hollow array |
JPH09283300A (ja) | 1996-04-18 | 1997-10-31 | Sony Corp | プラズマ処理装置 |
JPH1041286A (ja) * | 1996-07-26 | 1998-02-13 | Mitsubishi Heavy Ind Ltd | プラズマcvd装置 |
DE19634795C2 (de) | 1996-08-29 | 1999-11-04 | Schott Glas | Plasma-CVD-Anlage mit einem Array von Mikrowellen-Plasmaelektroden und Plasma-CVD-Verfahren |
US6140773A (en) | 1996-09-10 | 2000-10-31 | The Regents Of The University Of California | Automated control of linear constricted plasma source array |
US6388381B2 (en) * | 1996-09-10 | 2002-05-14 | The Regents Of The University Of California | Constricted glow discharge plasma source |
DE19643865C2 (de) * | 1996-10-30 | 1999-04-08 | Schott Glas | Plasmaunterstütztes chemisches Abscheidungsverfahren (CVD) mit entfernter Anregung eines Anregungsgases (Remote-Plasma-CVD-Verfahren) zur Beschichtung oder zur Behandlung großflächiger Substrate und Vorrichtung zur Durchführung desselben |
US6174450B1 (en) | 1997-04-16 | 2001-01-16 | Lam Research Corporation | Methods and apparatus for controlling ion energy and plasma density in a plasma processing system |
DE19722624C2 (de) | 1997-05-30 | 2001-08-09 | Je Plasmaconsult Gmbh | Vorrichtung zur Erzeugung einer Vielzahl von Niedertemperatur-Plasmajets |
US5846884A (en) | 1997-06-20 | 1998-12-08 | Siemens Aktiengesellschaft | Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing |
US5874807A (en) * | 1997-08-27 | 1999-02-23 | The United States Of America As Represented By The Secretary Of The Navy | Large area plasma processing system (LAPPS) |
US6146462A (en) | 1998-05-08 | 2000-11-14 | Astenjohnson, Inc. | Structures and components thereof having a desired surface characteristic together with methods and apparatuses for producing the same |
JP3799819B2 (ja) * | 1998-05-20 | 2006-07-19 | セイコーエプソン株式会社 | 表面処理方法及び装置 |
DE19902146C2 (de) | 1999-01-20 | 2003-07-31 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zur gepulsten Plasmaaktivierung |
EP1035561A2 (en) | 1999-03-02 | 2000-09-13 | Praxair S.T. Technology, Inc. | Refractory coated component for use in thin film deposition and method for making |
JP3069700B1 (ja) | 1999-07-22 | 2000-07-24 | 静岡大学長 | 放電容器及びその放電容器を備えたプラズマラジカル生成装置 |
US6508911B1 (en) | 1999-08-16 | 2003-01-21 | Applied Materials Inc. | Diamond coated parts in a plasma reactor |
DE29919142U1 (de) | 1999-10-30 | 2001-03-08 | Agrodyn Hochspannungstechnik G | Plasmadüse |
SE521904C2 (sv) | 1999-11-26 | 2003-12-16 | Ladislav Bardos | Anordning för hybridplasmabehandling |
US6528947B1 (en) | 1999-12-06 | 2003-03-04 | E. I. Du Pont De Nemours And Company | Hollow cathode array for plasma generation |
US6489854B1 (en) | 2000-01-20 | 2002-12-03 | Aten International Co., Ltd. | Electronic apparatus for automatically detecting the length of network transmission lines |
JP2002121670A (ja) | 2000-10-17 | 2002-04-26 | Mitsubishi Heavy Ind Ltd | 薄膜の製造方法 |
JP2002143795A (ja) * | 2000-11-14 | 2002-05-21 | Sekisui Chem Co Ltd | 液晶用ガラス基板の洗浄方法 |
US6849854B2 (en) | 2001-01-18 | 2005-02-01 | Saintech Pty Ltd. | Ion source |
US6444945B1 (en) * | 2001-03-28 | 2002-09-03 | Cp Films, Inc. | Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source |
US6750600B2 (en) | 2001-05-03 | 2004-06-15 | Kaufman & Robinson, Inc. | Hall-current ion source |
US6640535B2 (en) | 2001-06-13 | 2003-11-04 | The Regents Of The University Of Michigan | Linear gridless ion thruster |
US7670688B2 (en) | 2001-06-25 | 2010-03-02 | Applied Materials, Inc. | Erosion-resistant components for plasma process chambers |
US6849306B2 (en) | 2001-08-23 | 2005-02-01 | Konica Corporation | Plasma treatment method at atmospheric pressure |
JP4040284B2 (ja) | 2001-11-08 | 2008-01-30 | 住友大阪セメント株式会社 | プラズマ発生用電極内蔵型サセプタ及びその製造方法 |
TWI262905B (en) | 2001-11-13 | 2006-10-01 | Tosoh Corp | Quartz glass parts, ceramic parts and process of producing those |
JP2003193239A (ja) | 2001-12-28 | 2003-07-09 | Hitachi Cable Ltd | ガラス膜の形成方法及びガラス膜形成装置 |
US20050016456A1 (en) | 2002-02-20 | 2005-01-27 | Noriyuki Taguchi | Plasma processing device and plasma processing method |
US7241360B2 (en) | 2002-04-19 | 2007-07-10 | Advanced Energy Industries, Inc. | Method and apparatus for neutralization of ion beam using AC ion source |
US20050208215A1 (en) * | 2002-06-14 | 2005-09-22 | Yuji Eguchi | Oxide film forming method and oxide film forming apparatus |
JP2004051099A (ja) * | 2002-07-16 | 2004-02-19 | Dainippon Printing Co Ltd | 液体紙容器用積層体 |
CA2465879C (en) * | 2002-08-30 | 2008-10-07 | Sekisui Chemical Co., Ltd. | Plasma processing apparatus |
US7411352B2 (en) * | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
WO2004027825A2 (en) | 2002-09-19 | 2004-04-01 | Applied Process Technologies, Inc. | Beam plasma source |
JP2005302681A (ja) | 2003-05-14 | 2005-10-27 | Sekisui Chem Co Ltd | プラズマ処理装置 |
JP3853803B2 (ja) * | 2004-02-04 | 2006-12-06 | 積水化学工業株式会社 | プラズマ処理装置およびその製造方法 |
CN100553400C (zh) | 2003-05-14 | 2009-10-21 | 积水化学工业株式会社 | 制造等离子处理设备的方法 |
US7543546B2 (en) | 2003-05-27 | 2009-06-09 | Matsushita Electric Works, Ltd. | Plasma processing apparatus, method for producing reaction vessel for plasma generation, and plasma processing method |
WO2004107825A1 (ja) * | 2003-05-30 | 2004-12-09 | Tokyo Electron Limited | プラズマ源及びプラズマ処理装置 |
JP2005005065A (ja) * | 2003-06-10 | 2005-01-06 | Kunihide Tachibana | プラズマ処理方法およびプラズマ処理装置 |
EP1646079A1 (en) | 2003-06-25 | 2006-04-12 | Sekisui Chemical Co., Ltd. | Device and method for surface treatment such as plasma treatment |
JP3709413B1 (ja) * | 2003-06-25 | 2005-10-26 | 積水化学工業株式会社 | 表面処理装置及び方法 |
FR2857555B1 (fr) * | 2003-07-09 | 2005-10-14 | Snecma Moteurs | Accelerateur a plasma a derive fermee d'electrons |
US6886240B2 (en) * | 2003-07-11 | 2005-05-03 | Excellatron Solid State, Llc | Apparatus for producing thin-film electrolyte |
RU2239532C1 (ru) | 2003-07-16 | 2004-11-10 | Осинцев Григорий Владиславович | Электрод для плазменной обработки |
US20050040037A1 (en) * | 2003-08-20 | 2005-02-24 | Walton Scott G. | Electron beam enhanced large area deposition system |
JP4311109B2 (ja) * | 2003-08-22 | 2009-08-12 | 東洋製罐株式会社 | プラスチック容器内面への蒸着膜の成膜方法 |
CN1313640C (zh) * | 2003-09-18 | 2007-05-02 | 中芯国际集成电路制造(上海)有限公司 | 等离子体增强式化学气相沉积处理方法 |
US6924223B2 (en) | 2003-09-30 | 2005-08-02 | Tokyo Electron Limited | Method of forming a metal layer using an intermittent precursor gas flow process |
JP2005116232A (ja) * | 2003-10-03 | 2005-04-28 | Ngk Insulators Ltd | 電子放出素子及びその製造方法 |
EP1686092A4 (en) | 2003-11-17 | 2012-03-07 | Konica Minolta Holdings Inc | PROCESS FOR PRODUCING NANOSTRUCTURED CARBON MATERIAL, NANOSTRUCTURED CARBON MATERIAL PRODUCED THEREBY, AND SUBSTRATE COMPRISING NANOSTRUCTURED CARBON MATERIAL OF THIS TYPE |
US7232975B2 (en) | 2003-12-02 | 2007-06-19 | Battelle Energy Alliance, Llc | Plasma generators, reactor systems and related methods |
JP2005243892A (ja) | 2004-02-26 | 2005-09-08 | Matsushita Electric Ind Co Ltd | ガスレーザ発振装置およびガスレーザ加工機 |
US7332061B2 (en) * | 2004-03-30 | 2008-02-19 | Intel Corporation | Integration of multiple frequency band FBAR filters |
KR100599037B1 (ko) | 2004-08-04 | 2006-07-12 | 삼성전자주식회사 | 이온 소스 및 이를 갖는 이온 주입 장치 |
FR2874606B1 (fr) | 2004-08-26 | 2006-10-13 | Saint Gobain | Procede de transfert d'une molecule organique fonctionnelle sur un substrat transparent |
JP4530825B2 (ja) | 2004-12-06 | 2010-08-25 | シャープ株式会社 | インライン型プラズマ処理装置 |
US7262555B2 (en) | 2005-03-17 | 2007-08-28 | Micron Technology, Inc. | Method and system for discretely controllable plasma processing |
US20060289304A1 (en) | 2005-06-22 | 2006-12-28 | Guardian Industries Corp. | Sputtering target with slow-sputter layer under target material |
JP2007026781A (ja) | 2005-07-13 | 2007-02-01 | Sharp Corp | プラズマ処理装置 |
US20070020451A1 (en) | 2005-07-20 | 2007-01-25 | 3M Innovative Properties Company | Moisture barrier coatings |
TWI294257B (en) * | 2005-08-04 | 2008-03-01 | Creating Nano Technologies Inc | Low temperature plasma discharging device and the applying method thereof |
CN101223624B (zh) * | 2005-09-09 | 2011-06-15 | 株式会社爱发科 | 离子源和等离子体处理装置 |
US8328982B1 (en) | 2005-09-16 | 2012-12-11 | Surfx Technologies Llc | Low-temperature, converging, reactive gas source and method of use |
JP2008112580A (ja) * | 2005-10-13 | 2008-05-15 | Ideal Star Inc | イオンフロー制御型プラズマ源、及び、誘導フラーレンの製造方法 |
US7618500B2 (en) | 2005-11-14 | 2009-11-17 | Lawrence Livermore National Security, Llc | Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals |
JP2007191792A (ja) * | 2006-01-19 | 2007-08-02 | Atto Co Ltd | ガス分離型シャワーヘッド |
JP2009530775A (ja) | 2006-03-17 | 2009-08-27 | ジェネラル・プラズマ・インコーポレーテッド | ミラーマグネトロンプラズマ源 |
JP2007280641A (ja) | 2006-04-03 | 2007-10-25 | Sharp Corp | プラズマ処理装置およびプラズマ処理方法 |
CN1831190A (zh) * | 2006-04-12 | 2006-09-13 | 上海集成电路研发中心有限公司 | 一种防止高密度等离子体化学气相沉积对金属损伤的方法 |
JP2008004814A (ja) | 2006-06-23 | 2008-01-10 | Sharp Corp | プラズマ処理装置 |
US20090183771A1 (en) | 2006-06-23 | 2009-07-23 | Hitoshi Sannomiya | Plasma processing apparatus, plasma processing method and photoelectric conversion element |
US20080073557A1 (en) | 2006-07-26 | 2008-03-27 | John German | Methods and apparatuses for directing an ion beam source |
KR100845890B1 (ko) * | 2006-09-14 | 2008-07-16 | 주식회사 뉴파워 프라즈마 | 대면적 유도 결합 플라즈마 반응기 |
TWI318417B (en) * | 2006-11-03 | 2009-12-11 | Ind Tech Res Inst | Hollow-type cathode electricity discharging apparatus |
GB0703044D0 (en) | 2007-02-16 | 2007-03-28 | Nordiko Technical Services Ltd | Apparatus |
US7411353B1 (en) | 2007-05-11 | 2008-08-12 | Rutberg Alexander P | Alternating current multi-phase plasma gas generator with annular electrodes |
EP1993329A1 (en) | 2007-05-15 | 2008-11-19 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Plasma source |
US20090004836A1 (en) | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
US7649316B2 (en) | 2007-07-13 | 2010-01-19 | Micron Technology, Inc. | Assemblies for plasma-enhanced treatment of substrates |
US8143788B2 (en) | 2007-08-31 | 2012-03-27 | California Institute Of Technology | Compact high current rare-earth emitter hollow cathode for hall effect thrusters |
US20100225234A1 (en) * | 2007-09-04 | 2010-09-09 | Atomic Energy Council - Institute Of Nuclear Energy Research | Hollow-cathode plasma generator |
US20090071403A1 (en) | 2007-09-19 | 2009-03-19 | Soo Young Choi | Pecvd process chamber with cooled backing plate |
US20090071406A1 (en) | 2007-09-19 | 2009-03-19 | Soo Young Choi | Cooled backing plate |
US8409459B2 (en) | 2008-02-28 | 2013-04-02 | Tokyo Electron Limited | Hollow cathode device and method for using the device to control the uniformity of a plasma process |
KR100978859B1 (ko) | 2008-07-11 | 2010-08-31 | 피에스케이 주식회사 | 할로우 캐소드 플라즈마 발생장치 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리장치 |
US20110135843A1 (en) | 2008-07-30 | 2011-06-09 | Kyocera Corporation | Deposited Film Forming Device and Deposited Film Forming Method |
KR101602517B1 (ko) | 2008-08-04 | 2016-03-10 | 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 | Pecvd를 이용한 박막 코팅을 증착하기 위한 플라즈마 소스 및 방법 |
CA2685668A1 (en) | 2008-11-24 | 2010-05-24 | Smith International, Inc. | A cutting element and a method of manufacturing a cutting element |
EP2368257A4 (en) | 2008-12-08 | 2016-03-09 | Gen Plasma Inc | MAGNETIC FIELD ION SOURCE DEVICE WITH CLOSED DRIFT AND SELF-CLEANING ANODE AND METHOD OF SUBSTRATE MODIFICATION THEREWITH |
US20100186671A1 (en) | 2009-01-23 | 2010-07-29 | Applied Materials, Inc. | Arrangement for working substrates by means of plasma |
CN102067224B (zh) | 2009-02-10 | 2014-11-19 | 艾格瑞系统有限公司 | 自适应基线补偿的系统和方法 |
US8476587B2 (en) | 2009-05-13 | 2013-07-02 | Micromass Uk Limited | Ion source with surface coating |
KR101842675B1 (ko) | 2009-07-08 | 2018-03-27 | 플라즈마시, 인크. | 플라즈마 처리를 위한 장치 및 방법 |
JP2013503974A (ja) | 2009-09-05 | 2013-02-04 | ジェネラル・プラズマ・インコーポレーテッド | プラズマ化学気相成長装置 |
US20110192348A1 (en) | 2010-02-05 | 2011-08-11 | Atomic Energy Council-Institute Of Nuclear Energy Research | RF Hollow Cathode Plasma Generator |
US9190289B2 (en) | 2010-02-26 | 2015-11-17 | Lam Research Corporation | System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas |
KR101179650B1 (ko) | 2010-03-19 | 2012-09-04 | 서울대학교산학협력단 | 양극 주변에 영구자석 자장을 인가하여 성능개선을 한 공동형 플라즈마 토치 |
US20110297532A1 (en) | 2010-06-07 | 2011-12-08 | General Electric Company | Apparatus and method for producing plasma during milling for processing of material compositions |
US8765232B2 (en) | 2011-01-10 | 2014-07-01 | Plasmasi, Inc. | Apparatus and method for dielectric deposition |
US20120258555A1 (en) | 2011-04-11 | 2012-10-11 | Lam Research Corporation | Multi-Frequency Hollow Cathode and Systems Implementing the Same |
US8900403B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
KR101535582B1 (ko) | 2011-05-20 | 2015-07-09 | 시마쯔 코포레이션 | 박막 형성 장치 |
BE1019991A3 (fr) | 2011-05-25 | 2013-03-05 | Agc Glass Europe | Procede de depot de couches sur un substrat verrier par pecvd a faible pression. |
CN103493602B (zh) | 2011-07-14 | 2016-06-08 | 株式会社岛津制作所 | 等离子体处理装置 |
JP5977986B2 (ja) | 2011-11-08 | 2016-08-24 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
CN102497721B (zh) | 2011-11-29 | 2014-04-30 | 北京大学 | 双空心阴极以及双空心阴极等离子体装置和应用 |
KR20140097510A (ko) | 2011-11-30 | 2014-08-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 폐쇄 루프 제어 |
CN104094377B (zh) | 2011-12-19 | 2016-05-11 | 弗劳恩霍弗实用研究促进协会 | 用于产生空心阴极电弧放电等离子体的装置 |
CN102677022B (zh) | 2012-01-04 | 2014-12-24 | 北京印刷学院 | 一种原子层沉积装置 |
JP6142799B2 (ja) | 2012-01-20 | 2017-06-07 | 株式会社Takumi | 永久磁石型回転機 |
JP5854225B2 (ja) | 2012-05-31 | 2016-02-09 | 株式会社島津製作所 | プラズマcvd成膜装置 |
US20130333618A1 (en) | 2012-06-18 | 2013-12-19 | Applied Materials, Inc. | Hall effect plasma source |
US20130337657A1 (en) | 2012-06-19 | 2013-12-19 | Plasmasi, Inc. | Apparatus and method for forming thin protective and optical layers on substrates |
CN102816987B (zh) | 2012-07-05 | 2014-10-22 | 中国科学院宁波材料技术与工程研究所 | 一种基体表面的耐磨耐蚀复合涂层及其制备方法 |
US9257285B2 (en) | 2012-08-22 | 2016-02-09 | Infineon Technologies Ag | Ion source devices and methods |
PL2915902T3 (pl) | 2012-11-02 | 2020-08-24 | AGC Inc. | Źródło plazmy dla plazmowego urządzenia CVD i sposób wytwarzania przedmiotu przy użyciu źródła plazmy |
CN103042317B (zh) | 2012-12-28 | 2015-03-11 | 北京工业大学 | 一种铁基无磁熔覆层用合金粉末材料及熔覆层制备方法 |
US9337002B2 (en) | 2013-03-12 | 2016-05-10 | Lam Research Corporation | Corrosion resistant aluminum coating on plasma chamber components |
US20140272388A1 (en) | 2013-03-14 | 2014-09-18 | Kennametal Inc. | Molten metal resistant composite coatings |
KR102192359B1 (ko) | 2013-03-15 | 2020-12-17 | 도레이 카부시키가이샤 | 플라즈마 cvd 장치 및 플라즈마 cvd 방법 |
EP3031066B1 (en) | 2013-08-11 | 2018-10-17 | Ariel-University Research and Development Company Ltd. | Ferroelectric emitter for electron beam emission and radiation generation |
GB201410703D0 (en) | 2014-06-16 | 2014-07-30 | Element Six Technologies Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
MY191327A (en) | 2014-12-05 | 2022-06-16 | Agc Flat Glass Na Inc | Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces |
CN107852805B (zh) | 2014-12-05 | 2020-10-16 | Agc玻璃欧洲公司 | 空心阴极等离子体源 |
JP2018028109A (ja) | 2014-12-22 | 2018-02-22 | 旭硝子株式会社 | プラズマcvd装置 |
US9704692B2 (en) | 2015-07-01 | 2017-07-11 | Lam Research Corporation | System for instantaneous radiofrequency power measurement and associated methods |
CN105427014A (zh) | 2015-10-27 | 2016-03-23 | 余华鸿 | 一种用于核电事故应急决策的方法和系统 |
US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
-
2009
- 2009-08-04 KR KR1020117005282A patent/KR101602517B1/ko active IP Right Grant
- 2009-08-04 CN CN201510505381.3A patent/CN105177526B/zh not_active Expired - Fee Related
- 2009-08-04 CN CN200980139450.6A patent/CN102172104B/zh active Active
- 2009-08-04 CN CN201510505370.5A patent/CN105206496B/zh active Active
- 2009-08-04 TW TW098126292A patent/TWI532414B/zh active
- 2009-08-04 JP JP2011522159A patent/JP2011530155A/ja active Pending
- 2009-08-04 BR BRPI0916880 patent/BRPI0916880B1/pt active IP Right Grant
- 2009-08-04 US US12/535,447 patent/US8652586B2/en active Active
- 2009-08-04 TW TW105103045A patent/TWI641292B/zh active
- 2009-08-04 EA EA201100298A patent/EA020763B9/ru not_active IP Right Cessation
- 2009-08-04 EA EA201400544A patent/EA030378B1/ru not_active IP Right Cessation
- 2009-08-04 EP EP09805431.5A patent/EP2316252B1/en active Active
- 2009-08-04 CN CN201510505383.2A patent/CN105154856B/zh not_active Expired - Fee Related
- 2009-08-04 CN CN201410641340.2A patent/CN104498898B/zh active Active
- 2009-08-04 WO PCT/US2009/052679 patent/WO2010017185A1/en active Application Filing
- 2009-08-04 EA EA201400545A patent/EA030379B1/ru not_active IP Right Cessation
- 2009-08-04 AR ARP090102991A patent/AR072911A1/es active IP Right Grant
- 2009-08-04 TW TW105103041A patent/TWI578854B/zh not_active IP Right Cessation
-
2014
- 2014-01-06 US US14/148,612 patent/US9478401B2/en active Active
- 2014-01-06 US US14/148,606 patent/US10580624B2/en active Active
- 2014-09-15 US US14/486,779 patent/US10580625B2/en not_active Expired - Fee Related
- 2014-09-15 US US14/486,726 patent/US10438778B2/en active Active
-
2015
- 2015-03-12 PH PH12015500541A patent/PH12015500541B1/en unknown
- 2015-03-12 PH PH12015500542A patent/PH12015500542A1/en unknown
- 2015-03-12 PH PH12015500540A patent/PH12015500540A1/en unknown
- 2015-03-12 PH PH12015500539A patent/PH12015500539A1/en unknown
- 2015-07-03 JP JP2015134106A patent/JP2016006772A/ja active Pending
- 2015-07-03 JP JP2015134098A patent/JP6246765B2/ja not_active Expired - Fee Related
- 2015-07-03 JP JP2015134085A patent/JP6175104B2/ja not_active Expired - Fee Related
- 2015-07-03 JP JP2015134112A patent/JP6313265B2/ja not_active Expired - Fee Related
- 2015-07-03 JP JP2015134116A patent/JP6316244B2/ja not_active Expired - Fee Related
-
2017
- 2017-05-10 JP JP2017093637A patent/JP6513124B2/ja active Active
- 2017-07-28 JP JP2017146662A patent/JP2017224621A/ja active Pending
-
2018
- 2018-12-27 JP JP2018245645A patent/JP2019083200A/ja active Pending
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EA201400545A1 (ru) | Способ нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы (варианты) | |
EA201390169A1 (ru) | Способ получения материала, содержащего основу, снабженную покрытием | |
TW200639269A (en) | Plating method | |
WO2009103925A3 (fr) | Croissance de nanotubes de carbone sur substrats de carbone ou metalliques | |
WO2011041135A3 (en) | Method of making coated metal articles | |
WO2011133207A3 (en) | A coating method for gas delivery system | |
DE602007005017D1 (de) | Verfahren für leicht zu reinigende substrate und artikel daraus | |
WO2010039363A3 (en) | Methods for forming silicon nitride based film or silicon carbon based film | |
BRPI0923092A2 (pt) | dispositivo e método para tratamento e/ou revestimento de superfícies de componentes de substrato por deposição a partir da fase gasosa. | |
WO2009112573A3 (de) | Verfahren und dispersion zum aufbringen einer metallschicht auf einem substrat sowie metallisierbare thermoplastische formmasse | |
WO2010025068A3 (en) | Cobalt deposition on barrier surfaces | |
TW200943419A (en) | Low wet etch rate silicon nitride film | |
EP2161316A4 (en) | ANTI-TACHE COATING COMPOSITION, METHOD FOR PRODUCING THE COMPOSITION, ANTI-TACHE COATING FILM FORMED FROM THE COMPOSITION, COATED OBJECT COMPRISING THE COATING FILM ON THE SURFACE, AND ANTI-TACHE TREATMENT METHOD BY FORMING THE COATING FILM | |
GB0624376D0 (en) | A universal method for selective area growth of organic molecular by vapour deposition | |
CA2929917C (en) | Coating method for surfaces in chemical installations | |
WO2013032786A3 (en) | Plasma activated conformal dielectric film deposition | |
ATE374168T1 (de) | Verfahren zur abscheidung von galliumoxidbeschichtungen auf flachglas | |
ATE554917T1 (de) | Beschichtete röhre mit einer polyolefinschicht mit verbesserter haftung | |
WO2017001406A3 (en) | Carbon-nanotube-based composite coating and production method thereof | |
WO2013019285A3 (en) | Apparatus for depositing thin film coatings and method of deposition utilizing such apparatus | |
UA100712C2 (ru) | СПОСОБ ИЗГОТОВЛЕНИЯ эмалированной стальной подложки | |
WO2011034751A3 (en) | Hot wire chemical vapor deposition (cvd) inline coating tool | |
MY165453A (en) | Drill having a coating | |
WO2011092017A8 (de) | Verfahren zur herstellung eines beschichteten gegenstands mit texturätzen | |
ATE542785T1 (de) | Verfahren zur elektrophoretischen beschichtung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): AM AZ KZ KG MD TJ TM |
|
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): BY RU |