BRPI0916880A2 - fonte de plasma e métodos para depositar revestimentos de película fina que utilizam deposição química a vapor melhorada de plasma. - Google Patents

fonte de plasma e métodos para depositar revestimentos de película fina que utilizam deposição química a vapor melhorada de plasma.

Info

Publication number
BRPI0916880A2
BRPI0916880A2 BRPI0916880A BRPI0916880A BRPI0916880A2 BR PI0916880 A2 BRPI0916880 A2 BR PI0916880A2 BR PI0916880 A BRPI0916880 A BR PI0916880A BR PI0916880 A BRPI0916880 A BR PI0916880A BR PI0916880 A2 BRPI0916880 A2 BR PI0916880A2
Authority
BR
Brazil
Prior art keywords
methods
thin film
chemical deposition
film coatings
depositing thin
Prior art date
Application number
BRPI0916880A
Other languages
English (en)
Inventor
Maschwitz Peter
Original Assignee
Agc Flat Glass Na Inc
Agc Glass Europe
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agc Flat Glass Na Inc, Agc Glass Europe, Asahi Glass Co Ltd filed Critical Agc Flat Glass Na Inc
Publication of BRPI0916880A2 publication Critical patent/BRPI0916880A2/pt
Publication of BRPI0916880B1 publication Critical patent/BRPI0916880B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2456—Coating containing TiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32036—AC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd
    • C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3328—Problems associated with coating adhesion, stress, lift-off of deposited films
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
BRPI0916880 2008-08-04 2009-08-04 fonte de plasma e método de formar revestimento que utiliza deposição química a vapor melhorada de plasma e revestimento BRPI0916880B1 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13783908P 2008-08-04 2008-08-04
PCT/US2009/052679 WO2010017185A1 (en) 2008-08-04 2009-08-04 Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition

Publications (2)

Publication Number Publication Date
BRPI0916880A2 true BRPI0916880A2 (pt) 2017-06-20
BRPI0916880B1 BRPI0916880B1 (pt) 2019-12-10

Family

ID=41608578

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0916880 BRPI0916880B1 (pt) 2008-08-04 2009-08-04 fonte de plasma e método de formar revestimento que utiliza deposição química a vapor melhorada de plasma e revestimento

Country Status (11)

Country Link
US (5) US8652586B2 (pt)
EP (1) EP2316252B1 (pt)
JP (9) JP2011530155A (pt)
KR (1) KR101602517B1 (pt)
CN (5) CN105206496B (pt)
AR (1) AR072911A1 (pt)
BR (1) BRPI0916880B1 (pt)
EA (3) EA030378B1 (pt)
PH (4) PH12015500541B1 (pt)
TW (3) TWI641292B (pt)
WO (1) WO2010017185A1 (pt)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8377209B2 (en) * 2008-03-12 2013-02-19 Applied Materials, Inc. Linear plasma source for dynamic (moving substrate) plasma processing
EP2316252B1 (en) 2008-08-04 2018-10-31 AGC Flat Glass North America, Inc. Plasma source and method for depositing thin film coatings using plasma enhanced chemical vapor deposition and method thereof
US9136086B2 (en) * 2008-12-08 2015-09-15 General Plasma, Inc. Closed drift magnetic field ion source apparatus containing self-cleaning anode and a process for substrate modification therewith
KR20120042748A (ko) 2009-05-13 2012-05-03 씨브이 홀딩스 엘엘씨 코팅된 표면 검사를 위한 가스제거 방법
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US8651158B2 (en) * 2009-11-17 2014-02-18 The United States Of America, As Represented By The Secretary Of The Navy Processing microtitre plates for covalent immobilization chemistries
US20110207301A1 (en) * 2010-02-19 2011-08-25 Kormanyos Kenneth R Atmospheric pressure chemical vapor deposition with saturation control
DE102010011592A1 (de) * 2010-03-16 2011-09-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hohlkathoden-Plasmaquelle sowie Verwendung der Hohlkathoden-Plasmaquelle
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
WO2011156876A1 (en) * 2010-06-18 2011-12-22 Mahle Metal Leve S/A Plasma processing device
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US8723423B2 (en) 2011-01-25 2014-05-13 Advanced Energy Industries, Inc. Electrostatic remote plasma source
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US8980046B2 (en) 2011-04-11 2015-03-17 Lam Research Corporation Semiconductor processing system with source for decoupled ion and radical control
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US20120258555A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation Multi-Frequency Hollow Cathode and Systems Implementing the Same
US9111728B2 (en) 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US20120255678A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation Multi-Frequency Hollow Cathode System for Substrate Plasma Processing
BE1019991A3 (fr) * 2011-05-25 2013-03-05 Agc Glass Europe Procede de depot de couches sur un substrat verrier par pecvd a faible pression.
US8617350B2 (en) * 2011-06-15 2013-12-31 Belight Technology Corporation, Limited Linear plasma system
US10225919B2 (en) * 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
US9604877B2 (en) * 2011-09-02 2017-03-28 Guardian Industries Corp. Method of strengthening glass using plasma torches and/or arc jets, and articles made according to the same
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
JP6095678B2 (ja) 2011-11-11 2017-03-15 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 薬剤パッケージ用の不動態化、ｐＨ保護又は滑性皮膜、被覆プロセス及び装置
EP2846755A1 (en) 2012-05-09 2015-03-18 SiO2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US11149370B2 (en) * 2012-09-19 2021-10-19 Apjet, Inc. Atmospheric-pressure plasma processing apparatus and method
KR101557341B1 (ko) * 2012-09-26 2015-10-06 (주)비엠씨 플라즈마 화학 기상 증착 장치
CA2890066C (en) 2012-11-01 2021-11-09 Sio2 Medical Products, Inc. Coating inspection method
WO2014069309A1 (ja) 2012-11-02 2014-05-08 旭硝子株式会社 プラズマｃｖｄ装置用のプラズマ源およびこのプラズマ源を用いた物品の製造方法
EP2920567B1 (en) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
WO2014085346A1 (en) 2012-11-30 2014-06-05 Sio2 Medical Products, Inc. Hollow body with inside coating
EP2961858B1 (en) 2013-03-01 2022-09-07 Si02 Medical Products, Inc. Coated syringe.
CA2904611C (en) 2013-03-11 2021-11-23 Sio2 Medical Products, Inc. Coated packaging
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
EP2971227B1 (en) 2013-03-15 2017-11-15 Si02 Medical Products, Inc. Coating method.
WO2014191485A2 (en) 2013-05-30 2014-12-04 Agc Glass Europe Solar control glazing
JP2017503079A (ja) 2014-01-05 2017-01-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 空間的原子層堆積又はパルス化学気相堆積を使用する膜堆積
US11066745B2 (en) 2014-03-28 2021-07-20 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
US9284210B2 (en) * 2014-03-31 2016-03-15 Corning Incorporated Methods and apparatus for material processing using dual source cyclonic plasma reactor
US10586685B2 (en) 2014-12-05 2020-03-10 Agc Glass Europe Hollow cathode plasma source
CN107615888B (zh) * 2014-12-05 2022-01-04 北美Agc平板玻璃公司 利用宏粒子减少涂层的等离子体源和将等离子体源用于沉积薄膜涂层和表面改性的方法
JP2018028109A (ja) * 2014-12-22 2018-02-22 旭硝子株式会社 プラズマｃｖｄ装置
US10980101B2 (en) * 2015-06-02 2021-04-13 Fuji Corporation Plasma generating device
CA2995225C (en) 2015-08-18 2023-08-29 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
EP3377673A4 (en) * 2015-11-16 2019-07-31 AGC Flat Glass North America, Inc. PLASMA DEVICE CONTROLLED BY MULTIPHASE ALTERNATING OR PULSED ELECTRICITY AND METHOD FOR PRODUCING A PLASMA
US9721765B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US9721764B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Method of producing plasma by multiple-phase alternating or pulsed electrical current
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
SG11201805171YA (en) * 2015-12-18 2018-07-30 Agc Flat Glass Na Inc Hollow cathode ion source and method of extracting and accelerating ions
TWI733712B (zh) * 2015-12-18 2021-07-21 美商應用材料股份有限公司 用於沉積腔室的擴散器及用於沉積腔室的電極
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
JP2019508852A (ja) * 2016-02-17 2019-03-28 イノヘンス カンパニー リミテッドＩｎｎｏｈａｎｃｅ Ｃｏ．，Ｌｔｄ プラズマ処理装置用カソード
BR102016006786B1 (pt) * 2016-03-28 2023-04-18 Scholtz E Fontana Consultoria Ltda - Me Método de densificação de plasma
DE102016117281A1 (de) 2016-09-14 2018-03-15 Kiekert Ag Kraftfahrzeugtürschloss
WO2018187177A1 (en) * 2017-04-05 2018-10-11 Sang In Lee Depositing of material by spraying precursor using supercritical fluid
EP3399538A1 (en) 2017-05-03 2018-11-07 AGC Glass Europe Segmented hollow cathode
US11851763B2 (en) * 2017-06-23 2023-12-26 General Electric Company Chemical vapor deposition during additive manufacturing
EA202191727A1 (ru) * 2018-12-21 2021-09-03 Агк Гласс Юроп Способ нанесения покрытия на металл
EP4034688A1 (en) 2019-09-23 2022-08-03 AGC Glass Europe Fabric substrate bearing a carbon based coating and process for making the same
US20230054056A1 (en) * 2019-12-19 2023-02-23 Agc Glass Europe Silicon oxide coated polymer films and low pressure pecvd methods for producing the same
EP4097269A1 (en) 2020-01-31 2022-12-07 AGC Glass Europe Durable decoratively coated substrates and process for obtaining the same
WO2022171583A1 (en) 2021-02-12 2022-08-18 Agc Glass Europe Method of coating onto fabric substrates by means of plasma
US20240279811A1 (en) 2021-02-12 2024-08-22 Agc Glass Europe Method of producing a water repellent coating onto textile substrates using a plasma generated by hollow cathodes
US20230047186A1 (en) * 2021-08-13 2023-02-16 Nano-Master, Inc. Apparatus and Methods for Roll-to-Roll (R2R) Plasma Enhanced/Activated Atomic Layer Deposition (PEALD/PAALD)
WO2024028174A1 (en) 2022-08-04 2024-02-08 Agc Glass Europe Decoratively coated polymer substrates and process for obtaining the same
WO2024028173A1 (en) 2022-08-04 2024-02-08 Agc Glass Europe Boron doped silicon oxide protective layer and method for making the same
CN116855915B (zh) * 2023-06-29 2024-01-30 广州今泰科技股份有限公司 一种大面积dlc镀层均匀沉积方法

Family Cites Families (172)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2920235A (en) 1958-07-24 1960-01-05 Persa R Bell Method and apparatus for producing intense energetic gas discharges
NL283468A (pt) 1961-09-27
US3381157A (en) 1964-12-10 1968-04-30 United Aircraft Corp Annular hollow cathode discharge apparatus
GB1257015A (pt) 1967-11-03 1971-12-15
US3813549A (en) 1972-12-26 1974-05-28 Ibm Self-healing electrode for uniform negative corona
US4196233A (en) 1974-02-07 1980-04-01 Ciba-Geigy Corporation Process for coating inorganic substrates with carbides, nitrides and/or carbonitrides
US4017808A (en) 1975-02-10 1977-04-12 Owens-Illinois, Inc. Gas laser with sputter-resistant cathode
JPS5844608A (ja) * 1981-09-09 1983-03-15 住友電気工業株式会社 無機絶縁超電導導体の製造方法
US4422014A (en) 1981-11-12 1983-12-20 David Glaser Method and apparatus for obtaining a focusable beam of electrons from a gaseous hollow-cathode discharge
US4419203A (en) 1982-03-05 1983-12-06 International Business Machines Corporation Apparatus and method for neutralizing ion beams
DE3222436C2 (de) 1982-06-15 1987-02-19 Kernforschungsanlage Jülich GmbH, 5170 Jülich Verfahren zur Herstellung einer wolframcarbidaktivierten Elektrode und deren Verwendung
JPS59228338A (ja) 1983-06-10 1984-12-21 Mitsubishi Electric Corp ホロ−カソ−ド
JPS61238962A (ja) * 1985-04-16 1986-10-24 Matsushita Electric Ind Co Ltd 膜形成装置
JPS61251021A (ja) 1985-04-26 1986-11-08 Fujitsu Ltd 成膜装置
JPS63297560A (ja) 1987-05-29 1988-12-05 Matsushita Electric Ind Co Ltd 薄膜の製造方法
US4916356A (en) 1988-09-26 1990-04-10 The United States Of America As Represented By The Secretary Of The Air Force High emissivity cold cathode ultrastructure
DE3832693A1 (de) 1988-09-27 1990-03-29 Leybold Ag Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe
US5028791A (en) * 1989-02-16 1991-07-02 Tokyo Electron Ltd. Electron beam excitation ion source
FR2643087B1 (fr) 1989-02-16 1991-06-07 Unirec Procede de depot d'un revetement de type ceramique sur un substrat metallique et element comportant un revetement obtenu par ce procede
DE69032691T2 (de) 1989-12-07 1999-06-10 Japan Science And Technology Corp., Kawaguchi, Saitama Verfahren und Gerät zur Plasmabehandlung unter atmosphärischem Druck
JP2537304B2 (ja) * 1989-12-07 1996-09-25 新技術事業団 大気圧プラズマ反応方法とその装置
US5437778A (en) 1990-07-10 1995-08-01 Telic Technologies Corporation Slotted cylindrical hollow cathode/magnetron sputtering device
JP3061288B2 (ja) * 1990-11-13 2000-07-10 株式会社日立製作所 プラズマ処理装置
DE4039930A1 (de) 1990-12-14 1992-06-17 Leybold Ag Vorrichtung fuer plasmabehandlung
US5330606A (en) 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
DE4109619C1 (pt) 1991-03-23 1992-08-06 Leybold Ag, 6450 Hanau, De
DE69229083T2 (de) 1991-07-18 1999-11-11 Mitsubishi Jukogyo K.K., Tokio/Tokyo Sputteranlage und Ionenquelle
US5286534A (en) 1991-12-23 1994-02-15 Minnesota Mining And Manufacturing Company Process for plasma deposition of a carbon rich coating
JPH05226258A (ja) * 1992-02-13 1993-09-03 Applied Materials Japan Kk プラズマ発生装置
FR2693770B1 (fr) 1992-07-15 1994-10-14 Europ Propulsion Moteur à plasma à dérive fermée d'électrons.
DE4236264C1 (pt) * 1992-10-27 1993-09-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De
CA2126731A1 (en) 1993-07-12 1995-01-13 Frank Jansen Hollow cathode array and method of cleaning sheet stock therewith
DE4336681C2 (de) 1993-10-27 1996-10-02 Fraunhofer Ges Forschung Verfahren und Einrichtung zum plasmaaktivierten Elektronenstrahlverdampfen
JPH07226395A (ja) 1994-02-15 1995-08-22 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
DE4412906C1 (de) 1994-04-14 1995-07-13 Fraunhofer Ges Forschung Verfahren und Einrichtung für die ionengestützte Vakuumbeschichtung
SE503141C2 (sv) * 1994-11-18 1996-04-01 Ladislav Bardos Apparat för alstring av linjär ljusbågsurladdning för plasmabearbetning
DE19505268C2 (de) 1995-02-16 1999-02-18 Fraunhofer Ges Forschung CVD-Verfahren zur Beschichtung von Substratoberflächen
US5686789A (en) 1995-03-14 1997-11-11 Osram Sylvania Inc. Discharge device having cathode with micro hollow array
JPH09283300A (ja) 1996-04-18 1997-10-31 Sony Corp プラズマ処理装置
JPH1041286A (ja) * 1996-07-26 1998-02-13 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置
DE19634795C2 (de) 1996-08-29 1999-11-04 Schott Glas Plasma-CVD-Anlage mit einem Array von Mikrowellen-Plasmaelektroden und Plasma-CVD-Verfahren
US6388381B2 (en) * 1996-09-10 2002-05-14 The Regents Of The University Of California Constricted glow discharge plasma source
US6140773A (en) 1996-09-10 2000-10-31 The Regents Of The University Of California Automated control of linear constricted plasma source array
DE19643865C2 (de) * 1996-10-30 1999-04-08 Schott Glas Plasmaunterstütztes chemisches Abscheidungsverfahren (CVD) mit entfernter Anregung eines Anregungsgases (Remote-Plasma-CVD-Verfahren) zur Beschichtung oder zur Behandlung großflächiger Substrate und Vorrichtung zur Durchführung desselben
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
DE19722624C2 (de) 1997-05-30 2001-08-09 Je Plasmaconsult Gmbh Vorrichtung zur Erzeugung einer Vielzahl von Niedertemperatur-Plasmajets
US5846884A (en) 1997-06-20 1998-12-08 Siemens Aktiengesellschaft Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing
US5874807A (en) * 1997-08-27 1999-02-23 The United States Of America As Represented By The Secretary Of The Navy Large area plasma processing system (LAPPS)
US6146462A (en) 1998-05-08 2000-11-14 Astenjohnson, Inc. Structures and components thereof having a desired surface characteristic together with methods and apparatuses for producing the same
JP3799819B2 (ja) * 1998-05-20 2006-07-19 セイコーエプソン株式会社 表面処理方法及び装置
DE19902146C2 (de) 1999-01-20 2003-07-31 Fraunhofer Ges Forschung Verfahren und Einrichtung zur gepulsten Plasmaaktivierung
EP1035561A2 (en) 1999-03-02 2000-09-13 Praxair S.T. Technology, Inc. Refractory coated component for use in thin film deposition and method for making
JP3069700B1 (ja) 1999-07-22 2000-07-24 静岡大学長 放電容器及びその放電容器を備えたプラズマラジカル生成装置
US6508911B1 (en) 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
DE29919142U1 (de) 1999-10-30 2001-03-08 Agrodyn Hochspannungstechnik GmbH, 33803 Steinhagen Plasmadüse
SE521904C2 (sv) 1999-11-26 2003-12-16 Ladislav Bardos Anordning för hybridplasmabehandling
US6528947B1 (en) 1999-12-06 2003-03-04 E. I. Du Pont De Nemours And Company Hollow cathode array for plasma generation
US6489854B1 (en) 2000-01-20 2002-12-03 Aten International Co., Ltd. Electronic apparatus for automatically detecting the length of network transmission lines
JP2002121670A (ja) 2000-10-17 2002-04-26 Mitsubishi Heavy Ind Ltd 薄膜の製造方法
JP2002143795A (ja) * 2000-11-14 2002-05-21 Sekisui Chem Co Ltd 液晶用ガラス基板の洗浄方法
US6849854B2 (en) 2001-01-18 2005-02-01 Saintech Pty Ltd. Ion source
US6444945B1 (en) 2001-03-28 2002-09-03 Cp Films, Inc. Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source
US6750600B2 (en) 2001-05-03 2004-06-15 Kaufman & Robinson, Inc. Hall-current ion source
WO2002101235A2 (en) 2001-06-13 2002-12-19 The Regents Of The University Of Michigan Linear gridless ion thruster
US7670688B2 (en) 2001-06-25 2010-03-02 Applied Materials, Inc. Erosion-resistant components for plasma process chambers
US6849306B2 (en) 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
JP4040284B2 (ja) 2001-11-08 2008-01-30 住友大阪セメント株式会社 プラズマ発生用電極内蔵型サセプタ及びその製造方法
EP1310466A3 (en) 2001-11-13 2003-10-22 Tosoh Corporation Quartz glass parts, ceramic parts and process of producing those
JP2003193239A (ja) 2001-12-28 2003-07-09 Hitachi Cable Ltd ガラス膜の形成方法及びガラス膜形成装置
WO2003071839A1 (en) 2002-02-20 2003-08-28 Matsushita Electric Works, Ltd. Plasma processing device and plasma processing method
US7241360B2 (en) 2002-04-19 2007-07-10 Advanced Energy Industries, Inc. Method and apparatus for neutralization of ion beam using AC ion source
WO2003107409A1 (ja) * 2002-06-01 2003-12-24 積水化学工業株式会社 酸化膜形成方法及び酸化膜形成装置
JP2004051099A (ja) * 2002-07-16 2004-02-19 Dainippon Printing Co Ltd 液体紙容器用積層体
CA2465879C (en) 2002-08-30 2008-10-07 Sekisui Chemical Co., Ltd. Plasma processing apparatus
WO2004027825A2 (en) 2002-09-19 2004-04-01 Applied Process Technologies, Inc. Beam plasma source
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
JP2005302681A (ja) 2003-05-14 2005-10-27 Sekisui Chem Co Ltd プラズマ処理装置
JP3853803B2 (ja) * 2004-02-04 2006-12-06 積水化学工業株式会社 プラズマ処理装置およびその製造方法
CN101296549B (zh) 2003-05-14 2012-07-11 积水化学工业株式会社 等离子处理设备
WO2004107394A2 (ja) 2003-05-27 2004-12-09 Matsushita Electric Works, Ltd. プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法
US7632379B2 (en) * 2003-05-30 2009-12-15 Toshio Goto Plasma source and plasma processing apparatus
JP2005005065A (ja) * 2003-06-10 2005-01-06 Kunihide Tachibana プラズマ処理方法およびプラズマ処理装置
KR20060027357A (ko) * 2003-06-25 2006-03-27 세키스이가가쿠 고교가부시키가이샤 플라즈마 처리 등의 표면 처리 장치 및 방법
JP3709413B1 (ja) * 2003-06-25 2005-10-26 積水化学工業株式会社 表面処理装置及び方法
FR2857555B1 (fr) * 2003-07-09 2005-10-14 Snecma Moteurs Accelerateur a plasma a derive fermee d'electrons
US6886240B2 (en) * 2003-07-11 2005-05-03 Excellatron Solid State, Llc Apparatus for producing thin-film electrolyte
RU2239532C1 (ru) 2003-07-16 2004-11-10 Осинцев Григорий Владиславович Электрод для плазменной обработки
US20050040037A1 (en) 2003-08-20 2005-02-24 Walton Scott G. Electron beam enhanced large area deposition system
JP4311109B2 (ja) * 2003-08-22 2009-08-12 東洋製罐株式会社 プラスチック容器内面への蒸着膜の成膜方法
CN1313640C (zh) * 2003-09-18 2007-05-02 中芯国际集成电路制造(上海)有限公司 等离子体增强式化学气相沉积处理方法
US6924223B2 (en) * 2003-09-30 2005-08-02 Tokyo Electron Limited Method of forming a metal layer using an intermittent precursor gas flow process
JP2005116232A (ja) * 2003-10-03 2005-04-28 Ngk Insulators Ltd 電子放出素子及びその製造方法
JP5002960B2 (ja) 2003-11-17 2012-08-15 コニカミノルタホールディングス株式会社 ナノ構造炭素材料の製造方法、前記製造方法により形成されたナノ構造炭素材料および前記ナノ構造炭素材料を有する基板
US7232975B2 (en) 2003-12-02 2007-06-19 Battelle Energy Alliance, Llc Plasma generators, reactor systems and related methods
JP2005243892A (ja) 2004-02-26 2005-09-08 Matsushita Electric Ind Co Ltd ガスレーザ発振装置およびガスレーザ加工機
US7332061B2 (en) * 2004-03-30 2008-02-19 Intel Corporation Integration of multiple frequency band FBAR filters
KR100599037B1 (ko) 2004-08-04 2006-07-12 삼성전자주식회사 이온 소스 및 이를 갖는 이온 주입 장치
FR2874606B1 (fr) 2004-08-26 2006-10-13 Saint Gobain Procede de transfert d'une molecule organique fonctionnelle sur un substrat transparent
JP4530825B2 (ja) 2004-12-06 2010-08-25 シャープ株式会社 インライン型プラズマ処理装置
US7262555B2 (en) 2005-03-17 2007-08-28 Micron Technology, Inc. Method and system for discretely controllable plasma processing
US20060289304A1 (en) 2005-06-22 2006-12-28 Guardian Industries Corp. Sputtering target with slow-sputter layer under target material
JP2007026781A (ja) 2005-07-13 2007-02-01 Sharp Corp プラズマ処理装置
US20070020451A1 (en) 2005-07-20 2007-01-25 3M Innovative Properties Company Moisture barrier coatings
TWI294257B (en) * 2005-08-04 2008-03-01 Creating Nano Technologies Inc Low temperature plasma discharging device and the applying method thereof
US8356575B2 (en) 2005-09-09 2013-01-22 Ulvac, Inc. Ion source and plasma processing apparatus
US8328982B1 (en) 2005-09-16 2012-12-11 Surfx Technologies Llc Low-temperature, converging, reactive gas source and method of use
JP2008112580A (ja) * 2005-10-13 2008-05-15 Ideal Star Inc イオンフロー制御型プラズマ源、及び、誘導フラーレンの製造方法
US7618500B2 (en) 2005-11-14 2009-11-17 Lawrence Livermore National Security, Llc Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals
JP2007191792A (ja) * 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
JP2009530775A (ja) 2006-03-17 2009-08-27 ジェネラル・プラズマ・インコーポレーテッド ミラーマグネトロンプラズマ源
JP2007280641A (ja) 2006-04-03 2007-10-25 Sharp Corp プラズマ処理装置およびプラズマ処理方法
CN1831190A (zh) * 2006-04-12 2006-09-13 上海集成电路研发中心有限公司 一种防止高密度等离子体化学气相沉积对金属损伤的方法
US20090183771A1 (en) 2006-06-23 2009-07-23 Hitoshi Sannomiya Plasma processing apparatus, plasma processing method and photoelectric conversion element
JP2008004814A (ja) 2006-06-23 2008-01-10 Sharp Corp プラズマ処理装置
US20080073557A1 (en) 2006-07-26 2008-03-27 John German Methods and apparatuses for directing an ion beam source
KR100845890B1 (ko) * 2006-09-14 2008-07-16 주식회사 뉴파워 프라즈마 대면적 유도 결합 플라즈마 반응기
TWI318417B (en) * 2006-11-03 2009-12-11 Ind Tech Res Inst Hollow-type cathode electricity discharging apparatus
GB0703044D0 (en) 2007-02-16 2007-03-28 Nordiko Technical Services Ltd Apparatus
US7411353B1 (en) 2007-05-11 2008-08-12 Rutberg Alexander P Alternating current multi-phase plasma gas generator with annular electrodes
EP1993329A1 (en) 2007-05-15 2008-11-19 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Plasma source
US20090004836A1 (en) 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US7649316B2 (en) * 2007-07-13 2010-01-19 Micron Technology, Inc. Assemblies for plasma-enhanced treatment of substrates
US8143788B2 (en) 2007-08-31 2012-03-27 California Institute Of Technology Compact high current rare-earth emitter hollow cathode for hall effect thrusters
US20100225234A1 (en) * 2007-09-04 2010-09-09 Atomic Energy Council - Institute Of Nuclear Energy Research Hollow-cathode plasma generator
US20090071403A1 (en) 2007-09-19 2009-03-19 Soo Young Choi Pecvd process chamber with cooled backing plate
US20090071406A1 (en) 2007-09-19 2009-03-19 Soo Young Choi Cooled backing plate
US8409459B2 (en) 2008-02-28 2013-04-02 Tokyo Electron Limited Hollow cathode device and method for using the device to control the uniformity of a plasma process
KR100978859B1 (ko) 2008-07-11 2010-08-31 피에스케이 주식회사 할로우 캐소드 플라즈마 발생장치 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리장치
US20110135843A1 (en) 2008-07-30 2011-06-09 Kyocera Corporation Deposited Film Forming Device and Deposited Film Forming Method
EP2316252B1 (en) 2008-08-04 2018-10-31 AGC Flat Glass North America, Inc. Plasma source and method for depositing thin film coatings using plasma enhanced chemical vapor deposition and method thereof
CA2685668A1 (en) 2008-11-24 2010-05-24 Smith International, Inc. A cutting element and a method of manufacturing a cutting element
US9136086B2 (en) 2008-12-08 2015-09-15 General Plasma, Inc. Closed drift magnetic field ion source apparatus containing self-cleaning anode and a process for substrate modification therewith
US20100186671A1 (en) 2009-01-23 2010-07-29 Applied Materials, Inc. Arrangement for working substrates by means of plasma
CN102067224B (zh) 2009-02-10 2014-11-19 艾格瑞系统有限公司 自适应基线补偿的系统和方法
US8476587B2 (en) 2009-05-13 2013-07-02 Micromass Uk Limited Ion source with surface coating
KR101842675B1 (ko) 2009-07-08 2018-03-27 플라즈마시, 인크. 플라즈마 처리를 위한 장치 및 방법
JP2013503974A (ja) 2009-09-05 2013-02-04 ジェネラル・プラズマ・インコーポレーテッド プラズマ化学気相成長装置
US20110192348A1 (en) 2010-02-05 2011-08-11 Atomic Energy Council-Institute Of Nuclear Energy Research RF Hollow Cathode Plasma Generator
US9190289B2 (en) 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
KR101179650B1 (ko) 2010-03-19 2012-09-04 서울대학교산학협력단 양극 주변에 영구자석 자장을 인가하여 성능개선을 한 공동형 플라즈마 토치
US20110297532A1 (en) 2010-06-07 2011-12-08 General Electric Company Apparatus and method for producing plasma during milling for processing of material compositions
US8765232B2 (en) 2011-01-10 2014-07-01 Plasmasi, Inc. Apparatus and method for dielectric deposition
US20120258555A1 (en) 2011-04-11 2012-10-11 Lam Research Corporation Multi-Frequency Hollow Cathode and Systems Implementing the Same
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
JPWO2012160718A1 (ja) 2011-05-20 2014-07-31 株式会社島津製作所 薄膜形成装置
BE1019991A3 (fr) 2011-05-25 2013-03-05 Agc Glass Europe Procede de depot de couches sur un substrat verrier par pecvd a faible pression.
JP5804059B2 (ja) 2011-07-14 2015-11-04 株式会社島津製作所 プラズマ処理装置
JP5977986B2 (ja) 2011-11-08 2016-08-24 株式会社日立ハイテクノロジーズ 熱処理装置
CN102497721B (zh) 2011-11-29 2014-04-30 北京大学 双空心阴极以及双空心阴极等离子体装置和应用
CN103958723B (zh) 2011-11-30 2017-04-05 应用材料公司 闭环控制
US9443703B2 (en) 2011-12-19 2016-09-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Apparatus for generating a hollow cathode arc discharge plasma
CN102677022B (zh) 2012-01-04 2014-12-24 北京印刷学院 一种原子层沉积装置
CN104054242A (zh) 2012-01-20 2014-09-17 株式会社Tms 永磁型旋转电机
JP5854225B2 (ja) 2012-05-31 2016-02-09 株式会社島津製作所 プラズマｃｖｄ成膜装置
US20130333618A1 (en) 2012-06-18 2013-12-19 Applied Materials, Inc. Hall effect plasma source
US20130337657A1 (en) 2012-06-19 2013-12-19 Plasmasi, Inc. Apparatus and method for forming thin protective and optical layers on substrates
CN102816987B (zh) 2012-07-05 2014-10-22 中国科学院宁波材料技术与工程研究所 一种基体表面的耐磨耐蚀复合涂层及其制备方法
US9257285B2 (en) 2012-08-22 2016-02-09 Infineon Technologies Ag Ion source devices and methods
WO2014069309A1 (ja) 2012-11-02 2014-05-08 旭硝子株式会社 プラズマｃｖｄ装置用のプラズマ源およびこのプラズマ源を用いた物品の製造方法
CN103042317B (zh) 2012-12-28 2015-03-11 北京工业大学 一种铁基无磁熔覆层用合金粉末材料及熔覆层制备方法
US9337002B2 (en) 2013-03-12 2016-05-10 Lam Research Corporation Corrosion resistant aluminum coating on plasma chamber components
US20140272388A1 (en) 2013-03-14 2014-09-18 Kennametal Inc. Molten metal resistant composite coatings
MY183557A (en) 2013-03-15 2021-02-26 Toray Industries Plasma cvd device and plasma cvd method
WO2015022621A1 (en) 2013-08-11 2015-02-19 Ariel - University Research And Development Company, Ltd. Ferroelectric emitter for electron beam emission and radiation generation
GB201410703D0 (en) 2014-06-16 2014-07-30 Element Six Technologies Ltd A microwave plasma reactor for manufacturing synthetic diamond material
CN107615888B (zh) 2014-12-05 2022-01-04 北美Agc平板玻璃公司 利用宏粒子减少涂层的等离子体源和将等离子体源用于沉积薄膜涂层和表面改性的方法
US10586685B2 (en) 2014-12-05 2020-03-10 Agc Glass Europe Hollow cathode plasma source
JP2018028109A (ja) 2014-12-22 2018-02-22 旭硝子株式会社 プラズマｃｖｄ装置
US9704692B2 (en) 2015-07-01 2017-07-11 Lam Research Corporation System for instantaneous radiofrequency power measurement and associated methods
CN105427014A (zh) 2015-10-27 2016-03-23 余华鸿 一种用于核电事故应急决策的方法和系统
US9721765B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source

Also Published As

Publication number Publication date
PH12015500539B1 (en) 2015-10-12
US9478401B2 (en) 2016-10-25
TW201012308A (en) 2010-03-16
EA201400545A1 (ru) 2014-08-29
TWI532414B (zh) 2016-05-01
KR101602517B1 (ko) 2016-03-10
PH12015500541A1 (en) 2015-10-12
JP2019083200A (ja) 2019-05-30
CN105177526B (zh) 2018-12-11
AR072911A1 (es) 2010-09-29
CN105206496B (zh) 2019-07-05
EA030379B1 (ru) 2018-07-31
CN104498898A (zh) 2015-04-08
EA201400544A1 (ru) 2014-08-29
US10580625B2 (en) 2020-03-03
JP2016006773A (ja) 2016-01-14
EP2316252B1 (en) 2018-10-31
JP6313265B2 (ja) 2018-04-18
WO2010017185A1 (en) 2010-02-11
JP2017214651A (ja) 2017-12-07
JP6175104B2 (ja) 2017-08-02
US20140216343A1 (en) 2014-08-07
US20150002021A1 (en) 2015-01-01
JP2011530155A (ja) 2011-12-15
TWI578854B (zh) 2017-04-11
JP6513124B2 (ja) 2019-05-15
JP2016006771A (ja) 2016-01-14
JP2017224621A (ja) 2017-12-21
PH12015500542A1 (en) 2015-10-12
JP2015228375A (ja) 2015-12-17
CN105177526A (zh) 2015-12-23
EA201100298A1 (ru) 2011-10-31
KR20110042104A (ko) 2011-04-22
CN104498898B (zh) 2017-10-24
CN102172104A (zh) 2011-08-31
JP6246765B2 (ja) 2017-12-13
EP2316252A4 (en) 2014-09-03
EA030378B1 (ru) 2018-07-31
US10580624B2 (en) 2020-03-03
US20100028238A1 (en) 2010-02-04
US20150004330A1 (en) 2015-01-01
US8652586B2 (en) 2014-02-18
BRPI0916880B1 (pt) 2019-12-10
US10438778B2 (en) 2019-10-08
TWI641292B (zh) 2018-11-11
JP6316244B2 (ja) 2018-04-25
PH12015500540B1 (en) 2015-10-12
PH12015500539A1 (en) 2015-10-12
US20140220361A1 (en) 2014-08-07
CN105206496A (zh) 2015-12-30
EP2316252A1 (en) 2011-05-04
EA020763B9 (ru) 2015-05-29
TW201628465A (zh) 2016-08-01
TW201644327A (zh) 2016-12-16
EA020763B1 (ru) 2015-01-30
PH12015500540A1 (en) 2015-10-12
PH12015500542B1 (en) 2015-10-12
CN102172104B (zh) 2015-08-26
JP2016001607A (ja) 2016-01-07
CN105154856B (zh) 2018-08-10
PH12015500541B1 (en) 2015-10-12
CN105154856A (zh) 2015-12-16
JP2016006772A (ja) 2016-01-14

Similar Documents

Publication Publication Date Title
BRPI0916880A2 (pt) fonte de plasma e métodos para depositar revestimentos de película fina que utilizam deposição química a vapor melhorada de plasma.
BRPI0816567A2 (pt) Gerador de vapor para o depósito de um revestimento metálico sobre um substrato
TWI341009B (en) Chemical vapor deposition
EP2116629A4 (en) DEPOSITION SOURCE, DEPOSITION APPARATUS, AND METHOD FOR FORMING ORGANIC THIN FILM
EP2109899A4 (en) SOILING METHOD AND METHOD
EP2274961A4 (en) PLASMA-ASSISTED STEAM PHASE CHEMICAL DEPOSITION OF BARRIER COATINGS
EP2215282A4 (en) CHEMICAL VAPOR DEPOSITION REACTOR
BR112013014566A2 (pt) fonte de evaporação linear, câmara de evaporação e método para revestir substratos
SG11201405416UA (en) Atomic layer deposition with plasma source
BR112013006310A2 (pt) nanoestruturas de carbono e redes produzidas por deposição de vapor químico
BRPI0921674A2 (pt) artigo , metodo para revestir um substantivo,revestimento de substrato,composito, e, unidade de vidro isolante.
DK2132233T3 (da) Fremgangsmåde til fremstilling af en coating ved plasmateknologi ved atmosfæretryk
SG144072A1 (en) Cyclic chemical vapor deposition of metal-silicon containing films
EP2473650A4 (en) PLASMA ASSISTED STEAM PHASE CHEMICAL DEPOSITION APPARATUS
EP2187708A4 (en) ORGANIC MATERIAL STEAM GENERATOR, FILM STORAGE SOURCE, AND FILM STORAGE DEVICE
WO2012012026A3 (en) Metal film deposition
BRPI0918113A2 (pt) instalação de depósito a vácuo de um revestimento de liga metálica sobre um substrato e método para depositar um revestimento de liga metálica sobre um substrato
PL2817433T3 (pl) Sposób osadzania chemicznego z fazy gazowej w celu nakładania powłoki krzemionkowej na podłoże szklane
EP2938752A4 (en) PLASMA ACTIVATED CHEMICAL VAPOR DEPOSITION SOURCE (PECVD)
BRPI0810798A2 (pt) Processo para aplicação de revestimento metálico em um substrato não-condutor.
FI20080248L (fi) Kemiallinen kaasupinnoite ja menetelmä kaasupinnoitteen muodostamiseksi
BRPI0924233A2 (pt) método para produzir um recipiente plástico revestido por filme fino de barreira aos gases
PT2586888T (pt) Fonte de evaporação por arco tendo uma velocidade de formação de película elevada, dispositivo de formação de película e processo de fabrico de película de revestimento usando a fonte de evaporação por arco
EP2661516A4 (en) CHUCK FOR CHEMICAL VAPOR DEPOSITION SYSTEMS AND RELATED METHODS
TWI370370B (en) Virtual metrology system and method applied on chemical vapor deposition process

Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B25D Requested change of name of applicant approved

Owner name: AGC FLAT GLASS NORTH AMERICA, INC. (US) ; AGC GLAS

B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 10/12/2019, OBSERVADAS AS CONDICOES LEGAIS. (CO) 10 (DEZ) ANOS CONTADOS A PARTIR DE 10/12/2019, OBSERVADAS AS CONDICOES LEGAIS