BR112013014566A2 - fonte de evaporação linear, câmara de evaporação e método para revestir substratos - Google Patents

fonte de evaporação linear, câmara de evaporação e método para revestir substratos

Info

Publication number
BR112013014566A2
BR112013014566A2 BR112013014566A BR112013014566A BR112013014566A2 BR 112013014566 A2 BR112013014566 A2 BR 112013014566A2 BR 112013014566 A BR112013014566 A BR 112013014566A BR 112013014566 A BR112013014566 A BR 112013014566A BR 112013014566 A2 BR112013014566 A2 BR 112013014566A2
Authority
BR
Brazil
Prior art keywords
coating substrates
evaporation
linear
evaporation source
chamber
Prior art date
Application number
BR112013014566A
Other languages
English (en)
Other versions
BR112013014566B1 (pt
Inventor
Christof Göbert
Hendrik Dr Zachmann
Frank Huber
Frank Ulmer
Heiko Schuler
Jens Rössler
Oliver Leifeld
Original Assignee
Solarion Ag Photovoltaik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarion Ag Photovoltaik filed Critical Solarion Ag Photovoltaik
Publication of BR112013014566A2 publication Critical patent/BR112013014566A2/pt
Publication of BR112013014566B1 publication Critical patent/BR112013014566B1/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
BR112013014566-8A 2010-12-21 2011-12-16 fonte de evaporação linear e método para revestir substratos BR112013014566B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010055285.2 2010-12-21
DE102010055285A DE102010055285A1 (de) 2010-12-21 2010-12-21 Verdampferquelle, Verdampferkammer und Beschichtungsverfahren
PCT/EP2011/006383 WO2012084165A1 (de) 2010-12-21 2011-12-16 Verdampferquelle, verdampferkammer, beschichtungsverfahren und düsenplatte

Publications (2)

Publication Number Publication Date
BR112013014566A2 true BR112013014566A2 (pt) 2016-09-20
BR112013014566B1 BR112013014566B1 (pt) 2020-11-03

Family

ID=45440480

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112013014566-8A BR112013014566B1 (pt) 2010-12-21 2011-12-16 fonte de evaporação linear e método para revestir substratos

Country Status (6)

Country Link
US (1) US20130337174A1 (pt)
EP (1) EP2655686B1 (pt)
CN (1) CN103261468B (pt)
BR (1) BR112013014566B1 (pt)
DE (1) DE102010055285A1 (pt)
WO (1) WO2012084165A1 (pt)

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CN103866236A (zh) * 2012-12-18 2014-06-18 北京汉能创昱科技有限公司 一种铜铟镓硒薄膜电池共蒸发线性源的布置方法
CN103898450B (zh) * 2012-12-25 2017-06-13 北京创昱科技有限公司 一种铜铟镓硒共蒸发线性源装置及其使用方法
CN104099571A (zh) * 2013-04-01 2014-10-15 上海和辉光电有限公司 蒸发源组件和薄膜沉积装置和薄膜沉积方法
EP3234213A1 (en) * 2014-12-17 2017-10-25 Applied Materials, Inc. Material deposition arrangement, a vacuum deposition system and method for depositing material
CN105088147B (zh) * 2015-09-11 2017-09-26 京东方科技集团股份有限公司 坩埚结构
US10760155B2 (en) * 2015-09-24 2020-09-01 Sharp Kabushiki Kaisha Vapor deposition source and vapor deposition device for producing vapor deposition film with high material usage efficiency
CN105401125B (zh) 2015-12-15 2018-09-04 深圳市华星光电技术有限公司 用于有机电激光显示的基板的蒸镀方法和蒸镀装置
JP6765237B2 (ja) * 2016-07-05 2020-10-07 キヤノントッキ株式会社 蒸着装置及び蒸発源
CN107299321B (zh) * 2017-07-28 2019-07-26 武汉华星光电半导体显示技术有限公司 蒸发源装置及蒸镀机
CN109746142B (zh) * 2017-11-06 2021-04-02 张家港康得新光电材料有限公司 镀膜装置
JP2020521039A (ja) * 2018-05-04 2020-07-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 蒸発した材料を堆積させるための蒸発源、真空堆積システム、及び蒸発した材料を堆積させるための方法
CN109666898A (zh) * 2019-01-03 2019-04-23 福建华佳彩有限公司 一种用于点蒸发源的坩埚
CN111850478A (zh) * 2019-04-30 2020-10-30 北京铂阳顶荣光伏科技有限公司 点蒸发源及蒸镀设备

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Also Published As

Publication number Publication date
CN103261468A (zh) 2013-08-21
DE102010055285A1 (de) 2012-06-21
BR112013014566B1 (pt) 2020-11-03
WO2012084165A1 (de) 2012-06-28
EP2655686B1 (de) 2017-11-22
CN103261468B (zh) 2015-10-21
US20130337174A1 (en) 2013-12-19
EP2655686A1 (de) 2013-10-30

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Legal Events

Date Code Title Description
B25G Requested change of headquarter approved

Owner name: SOLARION AG PHOTOVOLTAIK (DE)

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 16/12/2011, OBSERVADAS AS CONDICOES LEGAIS.