PL2700082T3 - Sposób powlekania podłoży oraz służące do tego wysokowydajne źródło napylania - Google Patents

Sposób powlekania podłoży oraz służące do tego wysokowydajne źródło napylania

Info

Publication number
PL2700082T3
PL2700082T3 PL12714576T PL12714576T PL2700082T3 PL 2700082 T3 PL2700082 T3 PL 2700082T3 PL 12714576 T PL12714576 T PL 12714576T PL 12714576 T PL12714576 T PL 12714576T PL 2700082 T3 PL2700082 T3 PL 2700082T3
Authority
PL
Poland
Prior art keywords
sputtering source
coating substrates
power sputtering
source therefor
therefor
Prior art date
Application number
PL12714576T
Other languages
English (en)
Inventor
Siegfried Krassnitzer
Kurt Ruhm
Original Assignee
Oerlikon Surface Solutions Ag, Pfäffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag, Pfäffikon filed Critical Oerlikon Surface Solutions Ag, Pfäffikon
Publication of PL2700082T3 publication Critical patent/PL2700082T3/pl

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3444Associated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464Operating strategies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464Operating strategies
    • H01J37/3467Pulsed operation, e.g. HIPIMS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497Temperature of target
PL12714576T 2011-04-20 2012-03-30 Sposób powlekania podłoży oraz służące do tego wysokowydajne źródło napylania PL2700082T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011018363A DE102011018363A1 (de) 2011-04-20 2011-04-20 Hochleistungszerstäubungsquelle
PCT/EP2012/001414 WO2012143087A1 (de) 2011-04-20 2012-03-30 Hochleistungszerstäubungsquelle
EP12714576.1A EP2700082B1 (de) 2011-04-20 2012-03-30 Verfahren zum beschichten von substraten und hochleistungszerstäubungsquelle dazu

Publications (1)

Publication Number Publication Date
PL2700082T3 true PL2700082T3 (pl) 2019-01-31

Family

ID=45974242

Family Applications (1)

Application Number Title Priority Date Filing Date
PL12714576T PL2700082T3 (pl) 2011-04-20 2012-03-30 Sposób powlekania podłoży oraz służące do tego wysokowydajne źródło napylania

Country Status (19)

Country Link
US (1) US9376745B2 (pl)
EP (1) EP2700082B1 (pl)
JP (1) JP6207499B2 (pl)
KR (1) KR101924666B1 (pl)
CN (1) CN103620731B (pl)
AR (1) AR086193A1 (pl)
BR (1) BR112013027022B1 (pl)
CA (1) CA2833795C (pl)
DE (1) DE102011018363A1 (pl)
ES (1) ES2696599T3 (pl)
HU (1) HUE041849T2 (pl)
MX (1) MX351826B (pl)
MY (1) MY175526A (pl)
PL (1) PL2700082T3 (pl)
RU (1) RU2602571C2 (pl)
SI (1) SI2700082T1 (pl)
TR (1) TR201816617T4 (pl)
TW (1) TWI545218B (pl)
WO (1) WO2012143087A1 (pl)

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RU2596818C2 (ru) 2011-04-20 2016-09-10 Эрликон Серфиз Солюшнз Аг, Пфеффикон Способ обеспечения последовательных импульсов мощности
DE102011117177A1 (de) 2011-10-28 2013-05-02 Oerlikon Trading Ag, Trübbach Verfahren zur Bereitstellung sequenzieller Leistungspulse
DE102011116576A1 (de) 2011-10-21 2013-04-25 Oerlikon Trading Ag, Trübbach Bohrer mit Beschichtung
DE102011121770A1 (de) 2011-12-21 2013-06-27 Oerlikon Trading Ag, Trübbach Homogenes HIPIMS-Beschichtungsverfahren
WO2014105819A1 (en) * 2012-12-28 2014-07-03 Sputtering Components, Inc. Plasma enhanced chemical vapor deposition (pecvd) source
DE102013208771B4 (de) * 2013-05-13 2019-11-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Beeinflussung der Schichtdickenverteilung auf Substraten und Verwendung einer Vorrichtung zur Durchführung des Verfahrens
DE102013011072A1 (de) * 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach Targetpräparation
KR102178189B1 (ko) 2013-07-03 2020-11-13 외를리콘 서피스 솔루션즈 아게, 페피콘 TixSi1-xN 층 및 그의 생산
DE102013011075A1 (de) * 2013-07-03 2015-01-08 Oerlikon Trading Ag TiB2 Schichten und ihre Herstellung
EP3056587B1 (de) 2015-02-13 2020-11-18 Walter AG VHM-Schaftfräser mit TiAlN-ZrN-Beschichtung
GEP201606512B (en) * 2015-05-28 2016-07-11 Planar magnetron sputter
PL3375006T3 (pl) * 2015-11-12 2021-11-22 Oerlikon Surface Solutions Ag, Pfäffikon Układ do napylania i sposób zoptymalizowanego rozkładu przepływu energii
RU2619460C1 (ru) * 2015-11-25 2017-05-16 Федеральное государственное бюджетное учреждение науки Институт электрофизики Уральского отделения Российской академии наук (ИЭФ УрО РАН) Способ ионно-лучевой обработки изделий с большой площадью поверхности
DE102016012460A1 (de) * 2016-10-19 2018-04-19 Grenzebach Maschinenbau Gmbh Vorrichtung und Verfahren zur Herstellung definierter Eigenschaften von Gradientenschichten in einem System mehrlagiger Beschichtungen bei Sputter - Anlagen
RU2657275C2 (ru) * 2016-11-17 2018-06-09 Государственное бюджетное образовательное учреждение высшего образования Московской области "Университет "Дубна" (Государственный университет "Дубна") Способ получения пленок теллурида кадмия магнетронным распылением на постоянном токе
CN111132787B (zh) * 2017-08-04 2023-05-30 欧瑞康表面处理解决方案股份公司普费菲孔 具有增强性能的螺孔钻及用于制造螺孔钻的方法
EP4235734A1 (en) * 2022-02-28 2023-08-30 TRUMPF Huettinger Sp. Z o. o. High power generator and method of supplying high power pulses
EP4235733A1 (en) * 2022-02-28 2023-08-30 TRUMPF Huettinger Sp. Z o. o. High power generator and method of supplying high power pulses
EP4235742A1 (en) * 2022-02-28 2023-08-30 TRUMPF Huettinger Sp. Z o. o. High power generator and method of supplying high power pulses
EP4235741A1 (en) * 2022-02-28 2023-08-30 TRUMPF Huettinger Sp. Z o. o. High power generator and method of supplying high power pulses
EP4235739A1 (en) * 2022-02-28 2023-08-30 TRUMPF Huettinger Sp. Z o. o. High power generator and method of supplying high power pulses

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RU1828142C (ru) * 1991-01-31 1995-06-27 Научно-исследовательский институт энергетического машиностроени МГТУ им.Н.Э.Баумана Способ нанесения вакуумных покрытий сложного состава и устройство для его осуществления
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
US6183614B1 (en) * 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6413382B1 (en) 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
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JP4393158B2 (ja) * 2003-11-11 2010-01-06 新電元工業株式会社 スパッタ用電源
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UA77692C2 (en) * 2004-04-19 2007-01-15 Taras Shevchenko Kyiv Nat Univ Magnetron spraying mechanism
CA2626073A1 (en) * 2005-11-01 2007-05-10 Cardinal Cg Company Reactive sputter deposition processes and equipment
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JP4648166B2 (ja) * 2005-11-24 2011-03-09 新電元工業株式会社 システム電源及び電力供給システム
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
DE102008021912C5 (de) 2008-05-01 2018-01-11 Cemecon Ag Beschichtungsverfahren
RU2371514C1 (ru) * 2008-08-20 2009-10-27 Государственное образовательное учреждение высшего профессионального образования "Томский политехнический университет" Дуальная магнетронная распылительная система
JP2010065240A (ja) * 2008-09-08 2010-03-25 Kobe Steel Ltd スパッタ装置
DE202010001497U1 (de) 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle

Also Published As

Publication number Publication date
JP2014514452A (ja) 2014-06-19
ES2696599T3 (es) 2019-01-17
AR086193A1 (es) 2013-11-27
EP2700082A1 (de) 2014-02-26
US9376745B2 (en) 2016-06-28
CN103620731A (zh) 2014-03-05
TWI545218B (zh) 2016-08-11
WO2012143087A1 (de) 2012-10-26
DE102011018363A1 (de) 2012-10-25
MX351826B (es) 2017-10-06
RU2602571C2 (ru) 2016-11-20
KR20140019805A (ko) 2014-02-17
BR112013027022A2 (pt) 2016-12-27
TR201816617T4 (tr) 2018-11-21
CA2833795A1 (en) 2012-10-26
CN103620731B (zh) 2016-10-26
SI2700082T1 (sl) 2019-02-28
CA2833795C (en) 2018-07-31
EP2700082B1 (de) 2018-08-15
RU2013151606A (ru) 2015-05-27
JP6207499B2 (ja) 2017-10-04
MX2013012199A (es) 2014-05-27
BR112013027022B1 (pt) 2021-09-08
HUE041849T2 (hu) 2019-05-28
US20140061030A1 (en) 2014-03-06
MY175526A (en) 2020-07-01
KR101924666B1 (ko) 2018-12-03
TW201250036A (en) 2012-12-16

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