AR086193A1 - Procedimiento para generar una descarga de plasma e instalacion de magnetrones-fuente de bombardeo ionico - Google Patents
Procedimiento para generar una descarga de plasma e instalacion de magnetrones-fuente de bombardeo ionicoInfo
- Publication number
- AR086193A1 AR086193A1 ARP120101357A ARP120101357A AR086193A1 AR 086193 A1 AR086193 A1 AR 086193A1 AR P120101357 A ARP120101357 A AR P120101357A AR P120101357 A ARP120101357 A AR P120101357A AR 086193 A1 AR086193 A1 AR 086193A1
- Authority
- AR
- Argentina
- Prior art keywords
- source
- ionic
- ionic bombardment
- magnetrones
- download
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
- Disintegrating Or Milling (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
La presente se refiere a un procedimiento de bombardeo iónico por magnetrón, con el que es posible pulverizar el material de la superficie de un objetivo de manera tal que el material pulverizado se encuentre presente en un elevado porcentaje en forma de iones. De acuerdo con la presente esto se logra mediante un sencillo generador, cuya potencia se distribuye en intervalos de tiempo en varios magnetrones fuentes de bombardeo iónico, es decir se alimenta una fuente de bombardeo iónico durante un intervalo de tiempo con la máxima potencia, y la siguiente fuente de bombardeo iónico es alimentada con la máxima potencia en el intervalo de tiempo subsiguiente. De esta manera se logran densidades de corrientes de descarga superiores a 0,2 A/cm2. Durante el tiempo desconectado tiene el objetivo de bombardeo iónico la posibilidad de refrigerarse, de manera de no superar la temperatura límite.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011018363A DE102011018363A1 (de) | 2011-04-20 | 2011-04-20 | Hochleistungszerstäubungsquelle |
Publications (1)
Publication Number | Publication Date |
---|---|
AR086193A1 true AR086193A1 (es) | 2013-11-27 |
Family
ID=45974242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ARP120101357A AR086193A1 (es) | 2011-04-20 | 2012-04-20 | Procedimiento para generar una descarga de plasma e instalacion de magnetrones-fuente de bombardeo ionico |
Country Status (19)
Country | Link |
---|---|
US (1) | US9376745B2 (es) |
EP (1) | EP2700082B1 (es) |
JP (1) | JP6207499B2 (es) |
KR (1) | KR101924666B1 (es) |
CN (1) | CN103620731B (es) |
AR (1) | AR086193A1 (es) |
BR (1) | BR112013027022B1 (es) |
CA (1) | CA2833795C (es) |
DE (1) | DE102011018363A1 (es) |
ES (1) | ES2696599T3 (es) |
HU (1) | HUE041849T2 (es) |
MX (1) | MX351826B (es) |
MY (1) | MY175526A (es) |
PL (1) | PL2700082T3 (es) |
RU (1) | RU2602571C2 (es) |
SI (1) | SI2700082T1 (es) |
TR (1) | TR201816617T4 (es) |
TW (1) | TWI545218B (es) |
WO (1) | WO2012143087A1 (es) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2596818C2 (ru) | 2011-04-20 | 2016-09-10 | Эрликон Серфиз Солюшнз Аг, Пфеффикон | Способ обеспечения последовательных импульсов мощности |
DE102011117177A1 (de) | 2011-10-28 | 2013-05-02 | Oerlikon Trading Ag, Trübbach | Verfahren zur Bereitstellung sequenzieller Leistungspulse |
DE102011116576A1 (de) | 2011-10-21 | 2013-04-25 | Oerlikon Trading Ag, Trübbach | Bohrer mit Beschichtung |
DE102011121770A1 (de) | 2011-12-21 | 2013-06-27 | Oerlikon Trading Ag, Trübbach | Homogenes HIPIMS-Beschichtungsverfahren |
WO2014105819A1 (en) * | 2012-12-28 | 2014-07-03 | Sputtering Components, Inc. | Plasma enhanced chemical vapor deposition (pecvd) source |
DE102013208771B4 (de) * | 2013-05-13 | 2019-11-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Beeinflussung der Schichtdickenverteilung auf Substraten und Verwendung einer Vorrichtung zur Durchführung des Verfahrens |
DE102013011072A1 (de) * | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | Targetpräparation |
KR102178189B1 (ko) † | 2013-07-03 | 2020-11-13 | 외를리콘 서피스 솔루션즈 아게, 페피콘 | TixSi1-xN 층 및 그의 생산 |
DE102013011075A1 (de) * | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag | TiB2 Schichten und ihre Herstellung |
EP3056587B1 (de) | 2015-02-13 | 2020-11-18 | Walter AG | VHM-Schaftfräser mit TiAlN-ZrN-Beschichtung |
GEP201606512B (en) * | 2015-05-28 | 2016-07-11 | Planar magnetron sputter | |
PL3375006T3 (pl) * | 2015-11-12 | 2021-11-22 | Oerlikon Surface Solutions Ag, Pfäffikon | Układ do napylania i sposób zoptymalizowanego rozkładu przepływu energii |
RU2619460C1 (ru) * | 2015-11-25 | 2017-05-16 | Федеральное государственное бюджетное учреждение науки Институт электрофизики Уральского отделения Российской академии наук (ИЭФ УрО РАН) | Способ ионно-лучевой обработки изделий с большой площадью поверхности |
DE102016012460A1 (de) * | 2016-10-19 | 2018-04-19 | Grenzebach Maschinenbau Gmbh | Vorrichtung und Verfahren zur Herstellung definierter Eigenschaften von Gradientenschichten in einem System mehrlagiger Beschichtungen bei Sputter - Anlagen |
RU2657275C2 (ru) * | 2016-11-17 | 2018-06-09 | Государственное бюджетное образовательное учреждение высшего образования Московской области "Университет "Дубна" (Государственный университет "Дубна") | Способ получения пленок теллурида кадмия магнетронным распылением на постоянном токе |
CN111132787B (zh) * | 2017-08-04 | 2023-05-30 | 欧瑞康表面处理解决方案股份公司普费菲孔 | 具有增强性能的螺孔钻及用于制造螺孔钻的方法 |
EP4235734A1 (en) * | 2022-02-28 | 2023-08-30 | TRUMPF Huettinger Sp. Z o. o. | High power generator and method of supplying high power pulses |
EP4235733A1 (en) * | 2022-02-28 | 2023-08-30 | TRUMPF Huettinger Sp. Z o. o. | High power generator and method of supplying high power pulses |
EP4235742A1 (en) * | 2022-02-28 | 2023-08-30 | TRUMPF Huettinger Sp. Z o. o. | High power generator and method of supplying high power pulses |
EP4235741A1 (en) * | 2022-02-28 | 2023-08-30 | TRUMPF Huettinger Sp. Z o. o. | High power generator and method of supplying high power pulses |
EP4235739A1 (en) * | 2022-02-28 | 2023-08-30 | TRUMPF Huettinger Sp. Z o. o. | High power generator and method of supplying high power pulses |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU1828142C (ru) * | 1991-01-31 | 1995-06-27 | Научно-исследовательский институт энергетического машиностроени МГТУ им.Н.Э.Баумана | Способ нанесения вакуумных покрытий сложного состава и устройство для его осуществления |
DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
US6183614B1 (en) * | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
US6413382B1 (en) | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
SE521095C2 (sv) | 2001-06-08 | 2003-09-30 | Cardinal Cg Co | Förfarande för reaktiv sputtring |
JP4393158B2 (ja) * | 2003-11-11 | 2010-01-06 | 新電元工業株式会社 | スパッタ用電源 |
EP1580298A1 (fr) * | 2004-03-22 | 2005-09-28 | Materia Nova A.S.B.L | Dépôt par pulverisation cathodique magnétron en régime impulsionnel avec préionisation |
UA77692C2 (en) * | 2004-04-19 | 2007-01-15 | Taras Shevchenko Kyiv Nat Univ | Magnetron spraying mechanism |
CA2626073A1 (en) * | 2005-11-01 | 2007-05-10 | Cardinal Cg Company | Reactive sputter deposition processes and equipment |
DE102006017382A1 (de) * | 2005-11-14 | 2007-05-16 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen |
JP4648166B2 (ja) * | 2005-11-24 | 2011-03-09 | 新電元工業株式会社 | システム電源及び電力供給システム |
US20080197015A1 (en) * | 2007-02-16 | 2008-08-21 | Terry Bluck | Multiple-magnetron sputtering source with plasma confinement |
DE102008021912C5 (de) | 2008-05-01 | 2018-01-11 | Cemecon Ag | Beschichtungsverfahren |
RU2371514C1 (ru) * | 2008-08-20 | 2009-10-27 | Государственное образовательное учреждение высшего профессионального образования "Томский политехнический университет" | Дуальная магнетронная распылительная система |
JP2010065240A (ja) * | 2008-09-08 | 2010-03-25 | Kobe Steel Ltd | スパッタ装置 |
DE202010001497U1 (de) | 2010-01-29 | 2010-04-22 | Hauzer Techno-Coating B.V. | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
-
2011
- 2011-04-20 DE DE102011018363A patent/DE102011018363A1/de not_active Withdrawn
-
2012
- 2012-03-30 HU HUE12714576A patent/HUE041849T2/hu unknown
- 2012-03-30 RU RU2013151606/02A patent/RU2602571C2/ru active
- 2012-03-30 MY MYPI2013003834A patent/MY175526A/en unknown
- 2012-03-30 SI SI201231446T patent/SI2700082T1/sl unknown
- 2012-03-30 CA CA2833795A patent/CA2833795C/en active Active
- 2012-03-30 BR BR112013027022-5A patent/BR112013027022B1/pt active IP Right Grant
- 2012-03-30 JP JP2014505524A patent/JP6207499B2/ja active Active
- 2012-03-30 TR TR2018/16617T patent/TR201816617T4/tr unknown
- 2012-03-30 WO PCT/EP2012/001414 patent/WO2012143087A1/de active Application Filing
- 2012-03-30 CN CN201280030373.2A patent/CN103620731B/zh active Active
- 2012-03-30 MX MX2013012199A patent/MX351826B/es active IP Right Grant
- 2012-03-30 KR KR1020137027630A patent/KR101924666B1/ko active IP Right Grant
- 2012-03-30 PL PL12714576T patent/PL2700082T3/pl unknown
- 2012-03-30 EP EP12714576.1A patent/EP2700082B1/de active Active
- 2012-03-30 US US14/112,618 patent/US9376745B2/en active Active
- 2012-03-30 ES ES12714576T patent/ES2696599T3/es active Active
- 2012-04-18 TW TW101113749A patent/TWI545218B/zh active
- 2012-04-20 AR ARP120101357A patent/AR086193A1/es active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2014514452A (ja) | 2014-06-19 |
ES2696599T3 (es) | 2019-01-17 |
EP2700082A1 (de) | 2014-02-26 |
US9376745B2 (en) | 2016-06-28 |
CN103620731A (zh) | 2014-03-05 |
TWI545218B (zh) | 2016-08-11 |
WO2012143087A1 (de) | 2012-10-26 |
DE102011018363A1 (de) | 2012-10-25 |
MX351826B (es) | 2017-10-06 |
RU2602571C2 (ru) | 2016-11-20 |
KR20140019805A (ko) | 2014-02-17 |
BR112013027022A2 (pt) | 2016-12-27 |
TR201816617T4 (tr) | 2018-11-21 |
CA2833795A1 (en) | 2012-10-26 |
CN103620731B (zh) | 2016-10-26 |
SI2700082T1 (sl) | 2019-02-28 |
CA2833795C (en) | 2018-07-31 |
PL2700082T3 (pl) | 2019-01-31 |
EP2700082B1 (de) | 2018-08-15 |
RU2013151606A (ru) | 2015-05-27 |
JP6207499B2 (ja) | 2017-10-04 |
MX2013012199A (es) | 2014-05-27 |
BR112013027022B1 (pt) | 2021-09-08 |
HUE041849T2 (hu) | 2019-05-28 |
US20140061030A1 (en) | 2014-03-06 |
MY175526A (en) | 2020-07-01 |
KR101924666B1 (ko) | 2018-12-03 |
TW201250036A (en) | 2012-12-16 |
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