AR104551A1 - Sistema de recubrimiento por plasma de descarga de arco remoto - Google Patents

Sistema de recubrimiento por plasma de descarga de arco remoto

Info

Publication number
AR104551A1
AR104551A1 ARP160101307A ARP160101307A AR104551A1 AR 104551 A1 AR104551 A1 AR 104551A1 AR P160101307 A ARP160101307 A AR P160101307A AR P160101307 A ARP160101307 A AR P160101307A AR 104551 A1 AR104551 A1 AR 104551A1
Authority
AR
Argentina
Prior art keywords
cathode
assembly
white
primary
anode
Prior art date
Application number
ARP160101307A
Other languages
English (en)
Inventor
Volan Greg
Taylor Edward
Peterson Nicholas
A Sullivan Patrick
Trube Scott
Humenik David
Gorokhovsky Vladimir
Original Assignee
Vapor Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/617,005 external-priority patent/US9412569B2/en
Priority claimed from US13/840,305 external-priority patent/US10056237B2/en
Application filed by Vapor Technologies Inc filed Critical Vapor Technologies Inc
Publication of AR104551A1 publication Critical patent/AR104551A1/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode

Abstract

Un sistema de recubrimiento incluye una cámara de vacío y un conjunto de recubrimiento. El conjunto de recubrimiento incluye una fuente de vapor, un soporte de sustrato que sostiene los sustratos a recubrir de tal modo que los sustratos están ubicados delante de la fuente de vapor, un conjunto de arco de vacío catódico primario, un ánodo remoto acoplado eléctricamente al cátodo blanco, una fuente de alimentación secundaria conectada entre el cátodo blanco y el ánodo primario y una fuente de alimentación secundada conectada entre el cátodo blanco y el ánodo remoto. El conjunto de arco de vacío catódico primario incluye un conjunto de cámara catódica, un cátodo blanco, un ánodo primario opcional y un blindaje que aísla el cátodo blanco de la cámara de vacío. El blindaje define unas aberturas para la transmisión de, ya sea, una corriente de emisión de electrones o un plasma de vapor metálico desde el cátodo blanco hacia la cámara de vacío. La fuente de vapor está ubicada entre el conjunto de cámara catódica y el ánodo remoto.
ARP160101307A 2012-09-14 2016-05-06 Sistema de recubrimiento por plasma de descarga de arco remoto AR104551A1 (es)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/617,005 US9412569B2 (en) 2012-09-14 2012-09-14 Remote arc discharge plasma assisted processes
US13/840,305 US10056237B2 (en) 2012-09-14 2013-03-15 Low pressure arc plasma immersion coating vapor deposition and ion treatment
US14/064,617 US9793098B2 (en) 2012-09-14 2013-10-28 Low pressure arc plasma immersion coating vapor deposition and ion treatment
US14/706,510 US20160326635A1 (en) 2012-09-14 2015-05-07 Remote Arc Discharge Plasma Assisted Processes

Publications (1)

Publication Number Publication Date
AR104551A1 true AR104551A1 (es) 2017-07-26

Family

ID=50273330

Family Applications (1)

Application Number Title Priority Date Filing Date
ARP160101307A AR104551A1 (es) 2012-09-14 2016-05-06 Sistema de recubrimiento por plasma de descarga de arco remoto

Country Status (5)

Country Link
US (2) US9793098B2 (es)
JP (1) JP2017031501A (es)
AR (1) AR104551A1 (es)
CA (1) CA2928389A1 (es)
CL (1) CL2016001093A1 (es)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761424B1 (en) 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
US10304665B2 (en) 2011-09-07 2019-05-28 Nano-Product Engineering, LLC Reactors for plasma-assisted processes and associated methods
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9412569B2 (en) * 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
TWI565353B (zh) * 2012-10-19 2017-01-01 逢甲大學 可撓性電熱發熱體及其製作方法
US10135236B2 (en) * 2013-02-20 2018-11-20 The Board of Regents of the Nevada Systems of Higher Education on behalf of the University of Nevada, Las Vegas Auto-triggered methods and systems for protecting against direct and indirect electronic attack
US9070538B2 (en) * 2013-10-25 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization
US9984915B2 (en) * 2014-05-30 2018-05-29 Infineon Technologies Ag Semiconductor wafer and method for processing a semiconductor wafer
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
EP3233991B1 (en) * 2014-12-17 2023-02-01 Si02 Medical Products, Inc. Plasma treatment with non-polymerizing compounds that leads to reduced biomolecule adhesion to thermoplastic articles
SG11201705969VA (en) * 2015-01-22 2017-08-30 Chia Sern Chan Non-thermal soft plasma cleaning
RU2016117814A (ru) * 2015-05-07 2017-11-14 Вейпор Текнолоджиз Инк. Процессы с использованием удаленной плазмы дугового разряда
US10280512B2 (en) * 2015-07-27 2019-05-07 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for carbon film deposition profile control
DE102016215709A1 (de) * 2015-08-28 2017-03-02 Tsubakimoto Chain Co. Kettenkomponente und Kette
US9960199B2 (en) 2015-12-29 2018-05-01 Viavi Solutions Inc. Dielectric mirror based multispectral filter array
US9923007B2 (en) * 2015-12-29 2018-03-20 Viavi Solutions Inc. Metal mirror based multispectral filter array
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
KR20200036065A (ko) * 2016-03-30 2020-04-06 케이힌 람테크 가부시키가이샤 스퍼터링 캐소드, 스퍼터링 장치 및 성막체의 제조 방법
CN106714440B (zh) * 2017-02-24 2020-03-24 中国航天空气动力技术研究院 一种应用于高频感应等离子发生器起弧系统及起弧方法
US10847374B2 (en) 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
WO2019158225A1 (en) 2018-02-13 2019-08-22 Evatec Ag Methods of and apparatus for magnetron sputtering
US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
US11834204B1 (en) 2018-04-05 2023-12-05 Nano-Product Engineering, LLC Sources for plasma assisted electric propulsion
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
US10900117B2 (en) * 2018-10-24 2021-01-26 Vapor Technologies, Inc. Plasma corridor for high volume PE-CVD processing
US10900116B2 (en) * 2018-10-24 2021-01-26 Vapor Technologies, Inc. PVD system with remote arc discharge plasma assisted process
US20220162739A1 (en) 2019-03-15 2022-05-26 Nanofilm Technologies International Limited Improved coating processes
RU2726187C1 (ru) * 2019-11-28 2020-07-09 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "СТАНКИН") Устройство для обработки изделий быстрыми атомами
MX2023005412A (es) * 2020-11-09 2023-07-25 Tae Tech Inc Sistema, dispositivos y metodos para haz de electrones para calentamiento de plasma.
RU2752877C1 (ru) * 2020-12-11 2021-08-11 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "МГТУ "СТАНКИН") Устройство для обработки диэлектрических изделий быстрыми атомами
US20220384062A1 (en) * 2021-05-27 2022-12-01 Westinghouse Electric Company Llc Cathodic arc applied randomized grain structured coatings on zirconium alloy nuclear fuel cladding
US11664195B1 (en) * 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11688588B1 (en) 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
CN114481071B (zh) * 2022-02-11 2023-10-27 松山湖材料实验室 一种镀膜装置及dlc镀膜工艺
CN114481017B (zh) * 2022-02-11 2023-10-27 松山湖材料实验室 一种镀膜装置及清洗工艺
WO2023204960A2 (en) * 2022-04-01 2023-10-26 Board Of Regents, The University Of Texas System Techniques for enhanced confinement in magnetic fusion devices
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US636270A (en) 1898-12-15 1899-11-07 John H Loos Vacuum arc-lamp.
US3436332A (en) 1965-07-15 1969-04-01 Nippon Electric Co Stabilized low pressure triode sputtering apparatus
US3583899A (en) 1968-12-18 1971-06-08 Norton Co Sputtering apparatus
CH551498A (de) 1972-05-09 1974-07-15 Balzers Patent Beteilig Ag Anordnung zur aufstaeubung von stoffen auf unterlagen mittels einer elektrischen niederspannungsentladung.
US4155825A (en) 1977-05-02 1979-05-22 Fournier Paul R Integrated sputtering apparatus and method
US4111783A (en) 1977-11-08 1978-09-05 Bell Telephone Laboratories, Incorporated Triode sputtering system
CH619344B (de) 1977-12-23 Balzers Hochvakuum Verfahren zur herstellung goldfarbener ueberzuege.
US4269137A (en) 1979-03-19 1981-05-26 Xerox Corporation Pretreatment of substrates prior to thin film deposition
US4434038A (en) 1980-09-15 1984-02-28 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
US4448799A (en) * 1983-04-21 1984-05-15 Multi-Arc Vacuum Systems Inc. Arc-initiating trigger apparatus and method for electric arc vapor deposition coating systems
DD219354A1 (de) 1983-07-20 1985-02-27 Hochvakuum Dresden Veb Verfahren zur regelung der plasmaparameter in vakuumbeschichtungseinrichtungen mit bogenentladungen
US4588490A (en) 1985-05-22 1986-05-13 International Business Machines Corporation Hollow cathode enhanced magnetron sputter device
US4777908A (en) 1986-11-26 1988-10-18 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
US4730334A (en) 1987-01-05 1988-03-08 Collins George J Ultraviolet metal ion laser
JPS63282259A (ja) 1987-05-15 1988-11-18 Hitachi Ltd スパツタ装置
EP0306612B2 (de) 1987-08-26 1996-02-28 Balzers Aktiengesellschaft Verfahren zur Aufbringung von Schichten auf Substraten
US4951604A (en) 1989-02-17 1990-08-28 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
JPH03126865A (ja) 1989-10-13 1991-05-30 Toshiba Corp 電子ビーム蒸発装置
US5250779A (en) 1990-11-05 1993-10-05 Balzers Aktiengesellschaft Method and apparatus for heating-up a substrate by means of a low voltage arc discharge and variable magnetic field
US5503725A (en) 1991-04-29 1996-04-02 Novatech Method and device for treatment of products in gas-discharge plasma
US5262032A (en) 1991-05-28 1993-11-16 Leybold Aktiengesellschaft Sputtering apparatus with rotating target and target cooling
DE4125365C1 (es) 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De
US5346600A (en) 1992-08-14 1994-09-13 Hughes Aircraft Company Plasma-enhanced magnetron-sputtered deposition of materials
DE4235199C1 (es) 1992-10-19 1993-04-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
CN1179617A (zh) 1996-09-30 1998-04-22 摩托罗拉公司 电子发射膜及方法
SE9704607D0 (sv) 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
US6300720B1 (en) 1997-04-28 2001-10-09 Daniel Birx Plasma gun and methods for the use thereof
US6692617B1 (en) 1997-05-08 2004-02-17 Applied Materials, Inc. Sustained self-sputtering reactor having an increased density plasma
JP4120974B2 (ja) * 1997-06-17 2008-07-16 キヤノンアネルバ株式会社 薄膜作製方法および薄膜作製装置
US6086962A (en) 1997-07-25 2000-07-11 Diamonex, Incorporated Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
US6238537B1 (en) 1998-08-06 2001-05-29 Kaufman & Robinson, Inc. Ion assisted deposition source
US6153067A (en) 1998-12-30 2000-11-28 Advanced Ion Technology, Inc. Method for combined treatment of an object with an ion beam and a magnetron plasma with a combined magnetron-plasma and ion-beam source
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US6929727B2 (en) 1999-04-12 2005-08-16 G & H Technologies, Llc Rectangular cathodic arc source and method of steering an arc spot
US6610184B2 (en) 2001-11-14 2003-08-26 Applied Materials, Inc. Magnet array in conjunction with rotating magnetron for plasma sputtering
CA2305938C (en) 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Filtered cathodic arc deposition method and apparatus
US7300559B2 (en) 2000-04-10 2007-11-27 G & H Technologies Llc Filtered cathodic arc deposition method and apparatus
DE10018143C5 (de) 2000-04-12 2012-09-06 Oerlikon Trading Ag, Trübbach DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems
JP4085593B2 (ja) 2001-03-29 2008-05-14 日新電機株式会社 真空アーク蒸着装置
WO2004027825A2 (en) 2002-09-19 2004-04-01 Applied Process Technologies, Inc. Beam plasma source
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
SE0302045D0 (sv) 2003-07-10 2003-07-10 Chemfilt R & D Ab Work piece processing by pulsed electric discharges in solid-gas plasmas
US8500975B2 (en) 2004-01-07 2013-08-06 Applied Materials, Inc. Method and apparatus for sputtering onto large flat panels
EP1712655B1 (de) 2005-04-12 2010-03-03 Hauzer Techno-Coating B.V. Vorrichtung zur Plasmabehandlung und/oder zur Beschichtung von Werkstücken
US8034459B2 (en) 2005-10-18 2011-10-11 Southwest Research Institute Erosion resistant coatings
US20090214787A1 (en) 2005-10-18 2009-08-27 Southwest Research Institute Erosion Resistant Coatings
US20070138003A1 (en) 2005-12-21 2007-06-21 Annaqin Llc Lamination and conversion process and apparatus
DE102006020004B4 (de) 2006-04-26 2011-06-01 Systec System- Und Anlagentechnik Gmbh & Co.Kg Vorrichtung und Verfahren zur homogenen PVD-Beschichtung
US7498587B2 (en) 2006-05-01 2009-03-03 Vapor Technologies, Inc. Bi-directional filtered arc plasma source
EP2018653B1 (de) 2006-05-16 2014-08-06 Oerlikon Trading AG, Trübbach Arcquelle und magnetanordnung
US7939172B2 (en) 2006-05-17 2011-05-10 G & H Technologies, Llc Wear resistant vapor deposited coating, method of coating deposition and applications therefor
JP2008274334A (ja) 2007-04-26 2008-11-13 Sumitomo Heavy Ind Ltd 反射防止膜成膜装置及び反射防止膜製造方法
KR101499272B1 (ko) 2007-05-25 2015-03-05 오를리콘 트레이딩 아크티엔게젤샤프트, 트뤼프바흐 진공 처리 장치 및 진공 처리 방법
WO2009079358A1 (en) 2007-12-14 2009-06-25 The Regents Of The University Of California Very low pressure high power impulse triggered magnetron sputtering
US9077201B2 (en) 2009-05-29 2015-07-07 Toshiba Mitsubishi-Electric Industrial Systems Corporation Uninterruptible power supply device
US9279187B2 (en) 2009-11-11 2016-03-08 Southwest Research Institute Method for applying a diffusion barrier interlayer for high temperature components
WO2011119611A2 (en) 2010-03-22 2011-09-29 Applied Materials, Inc. Dielectric deposition using a remote plasma source
EP2431995A1 (en) 2010-09-17 2012-03-21 Asociacion de la Industria Navarra (AIN) Ionisation device
US8895115B2 (en) 2010-11-09 2014-11-25 Southwest Research Institute Method for producing an ionized vapor deposition coating
RU2013126583A (ru) 2010-11-11 2014-12-20 ЭнСиАй-СВИССНАНОКОУТ СА Устройство и способ обработки поверхности
US20120199070A1 (en) 2011-02-03 2012-08-09 Vapor Technologies, Inc. Filter for arc source
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9412569B2 (en) 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
CN104046943B (zh) 2013-03-15 2018-06-05 蒸汽技术公司 低压电弧等离子体浸没涂层气相沉积和离子处理

Also Published As

Publication number Publication date
JP2017031501A (ja) 2017-02-09
CL2016001093A1 (es) 2016-10-07
US20160326635A1 (en) 2016-11-10
US20140076716A1 (en) 2014-03-20
US9793098B2 (en) 2017-10-17
CA2928389A1 (en) 2016-11-07

Similar Documents

Publication Publication Date Title
AR104551A1 (es) Sistema de recubrimiento por plasma de descarga de arco remoto
AR092512A1 (es) Sistema y metodo de recubrimiento de un sustrato
MY183557A (en) Plasma cvd device and plasma cvd method
UA109032C2 (en) ELECTRONIC BEAM GENERATION DEVICE
ATE518409T1 (de) Vorrichtung und prozess zum erzeugen, beschleunigen und ausbreiten von strahlen von elektronen und plasma
CL2008002158A1 (es) Proceso para conformar una cuchilla de afeitar que comprende los pasos de proporcionar un sustrato, conformar un borde afilado, colocar el sustrato en una camara de vacio,junto con un primer objetivo solido, y suministrar un gas a la cama de vacio que al ionizarse forma un recubrimiento de pelicula delgada sobre dicho borde afilado
RU2014109915A (ru) Осаждение из паровой фазы для нанесения покрытия с погружением в дуговую плазму низкого давления и ионная обработка
WO2008120341A1 (ja) 電子銃及び電子ビーム露光装置
MX2015008261A (es) Dispositivo de bombardeo de iones y metodo para usar el mismo para limpiar una superficie de sustrato.
AR025066A2 (es) Metodo para ionizar un vapor de revestimiento en una disposicion de revestimiento por deposicion de vapor, y disposicion de revestimiento por deposicion devapor que usa un catodo con una campana anodica
AR085130A1 (es) Filtro para fuente de arco
TW200746212A (en) Light emission device and display device using the light emission device as light source
TW200735726A (en) Plasma gun and plasma gun film forming apparatus provided with the same
BR112014017309A2 (pt) pistola de plasma em cascata estendida
MX362273B (es) Generador de neutrones de fuente de iones de emision de campo.
WO2012073142A3 (de) Verfahren und vorrichtung zur ionenimplantation
BR112015002657A8 (pt) aparelho e método para o revestimento por plasma de um substrato, em particular de uma placa de prensa
ES2527048T3 (es) Dispositivo de tratamiento de bombardeo de iones, y método para la limpieza de la superficie del material base usando el dispositivo de tratamiento
MY174916A (en) Plasma source
GB201112958D0 (en) Electric discharge apparatus
WO2014132049A3 (en) Apparatus for the generation of low-energy x-rays
EP2509100A3 (en) Integrated anode and activated reactive gas source for use in a magnetron sputtering device
WO2013002954A3 (en) Windowless ionization device
TW200739647A (en) Cathode and counter-cathode arrangement in an ion source
AR072307A1 (es) Lampara fluorescente de catodo caliente que contiene un dispositivo para la descarga de mercurio y un material absorbente

Legal Events

Date Code Title Description
FB Suspension of granting procedure