CL2016001093A1 - Procesos asistidos de plasma de descarga de arco a distancia - Google Patents

Procesos asistidos de plasma de descarga de arco a distancia

Info

Publication number
CL2016001093A1
CL2016001093A1 CL2016001093A CL2016001093A CL2016001093A1 CL 2016001093 A1 CL2016001093 A1 CL 2016001093A1 CL 2016001093 A CL2016001093 A CL 2016001093A CL 2016001093 A CL2016001093 A CL 2016001093A CL 2016001093 A1 CL2016001093 A1 CL 2016001093A1
Authority
CL
Chile
Prior art keywords
plasma discharge
arc plasma
discharge processes
catode
objective
Prior art date
Application number
CL2016001093A
Other languages
English (en)
Inventor
Vladimir Gorokhovsky
David Humenik
Scott Trube
Patrick A Sullivan
Nicholas Peterson
Edward Taylor
Greg Volan
Original Assignee
Vapor Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/617,005 external-priority patent/US9412569B2/en
Priority claimed from US13/840,305 external-priority patent/US10056237B2/en
Application filed by Vapor Technologies Inc filed Critical Vapor Technologies Inc
Publication of CL2016001093A1 publication Critical patent/CL2016001093A1/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

UN SISTEMA DE REVESTIMIENTO QUE INCLUYE UNA CAMARA DE VACIO Y UN CONJUNTO DE REVESTIMIENTO. EL CONJUNTO DE REVESTIMIENTO TIENE UN CONJUNTO DE REVESTIMIENTO QUE INCLUYE UNA FUENTE DE VAPOR, UN SOPORTE DE SUSTRATO PARA MANTENER LOS SUSTRATOS A REVESTIR DE TAL MANERA QUE LOS SUSTRATOS SE COLOQUEN DELANTE DE LA FUENTE DE VAPOR, UN CONJUNTO DE ARCO CATODICO AL VACIO PRIMARIA, UN ANODO REMOTO ACOPLADO ELECTRICAMENTE AL OBJETIVO DEL CATODO UNA FUENTE DE ALIMENTACION PRIMERA CONECTADA ENTRE EL OBJETIVO DEL CATODO Y EL ANODO PRIMARIO Y UNA FUENTE DE ALIMENTACION SECUNDARIA CONECTADA ENTRE EL OBJETIVO DEL CATODO Y EL ANODO REMOTO.
CL2016001093A 2012-09-14 2016-05-06 Procesos asistidos de plasma de descarga de arco a distancia CL2016001093A1 (es)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/617,005 US9412569B2 (en) 2012-09-14 2012-09-14 Remote arc discharge plasma assisted processes
US13/840,305 US10056237B2 (en) 2012-09-14 2013-03-15 Low pressure arc plasma immersion coating vapor deposition and ion treatment
US14/064,617 US9793098B2 (en) 2012-09-14 2013-10-28 Low pressure arc plasma immersion coating vapor deposition and ion treatment
US14/706,510 US20160326635A1 (en) 2012-09-14 2015-05-07 Remote Arc Discharge Plasma Assisted Processes

Publications (1)

Publication Number Publication Date
CL2016001093A1 true CL2016001093A1 (es) 2016-10-07

Family

ID=50273330

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2016001093A CL2016001093A1 (es) 2012-09-14 2016-05-06 Procesos asistidos de plasma de descarga de arco a distancia

Country Status (5)

Country Link
US (2) US9793098B2 (es)
JP (1) JP2017031501A (es)
AR (1) AR104551A1 (es)
CA (1) CA2928389A1 (es)
CL (1) CL2016001093A1 (es)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10304665B2 (en) 2011-09-07 2019-05-28 Nano-Product Engineering, LLC Reactors for plasma-assisted processes and associated methods
US9761424B1 (en) 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
US9412569B2 (en) * 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
TWI565353B (zh) * 2012-10-19 2017-01-01 逢甲大學 可撓性電熱發熱體及其製作方法
US10135236B2 (en) * 2013-02-20 2018-11-20 The Board of Regents of the Nevada Systems of Higher Education on behalf of the University of Nevada, Las Vegas Auto-triggered methods and systems for protecting against direct and indirect electronic attack
US9070538B2 (en) * 2013-10-25 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization
US9984915B2 (en) * 2014-05-30 2018-05-29 Infineon Technologies Ag Semiconductor wafer and method for processing a semiconductor wafer
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9406535B2 (en) * 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
WO2016100557A2 (en) * 2014-12-17 2016-06-23 Sio2 Medical Products, Inc. Plasma treatment with non-polymerizing compounds that leads to reduced biomolecule adhesion to thermoplastic articles
SG11201705969VA (en) * 2015-01-22 2017-08-30 Chia Sern Chan Non-thermal soft plasma cleaning
RU2016117814A (ru) * 2015-05-07 2017-11-14 Вейпор Текнолоджиз Инк. Процессы с использованием удаленной плазмы дугового разряда
US10280512B2 (en) * 2015-07-27 2019-05-07 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for carbon film deposition profile control
DE102016215709A1 (de) * 2015-08-28 2017-03-02 Tsubakimoto Chain Co. Kettenkomponente und Kette
US9923007B2 (en) 2015-12-29 2018-03-20 Viavi Solutions Inc. Metal mirror based multispectral filter array
US9960199B2 (en) 2015-12-29 2018-05-01 Viavi Solutions Inc. Dielectric mirror based multispectral filter array
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
CN109881166B (zh) * 2016-03-30 2021-04-20 京浜乐梦金属科技株式会社 溅射阴极、溅射装置和成膜体的制造方法
CN106714440B (zh) * 2017-02-24 2020-03-24 中国航天空气动力技术研究院 一种应用于高频感应等离子发生器起弧系统及起弧方法
US10847374B2 (en) 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
JP7471236B2 (ja) 2018-02-13 2024-04-19 エヴァテック・アーゲー マグネトロンスパッタリングのための方法および装置
US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
US11834204B1 (en) 2018-04-05 2023-12-05 Nano-Product Engineering, LLC Sources for plasma assisted electric propulsion
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
US10900117B2 (en) * 2018-10-24 2021-01-26 Vapor Technologies, Inc. Plasma corridor for high volume PE-CVD processing
US10900116B2 (en) * 2018-10-24 2021-01-26 Vapor Technologies, Inc. PVD system with remote arc discharge plasma assisted process
US20220162739A1 (en) * 2019-03-15 2022-05-26 Nanofilm Technologies International Limited Improved coating processes
RU2726187C1 (ru) * 2019-11-28 2020-07-09 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "СТАНКИН") Устройство для обработки изделий быстрыми атомами
CA3199783A1 (en) * 2020-11-09 2022-05-12 Tae Technologies, Inc. System, devices and methods for electron beam for plasma heating
RU2752877C1 (ru) * 2020-12-11 2021-08-11 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "МГТУ "СТАНКИН") Устройство для обработки диэлектрических изделий быстрыми атомами
US20220384062A1 (en) * 2021-05-27 2022-12-01 Westinghouse Electric Company Llc Cathodic arc applied randomized grain structured coatings on zirconium alloy nuclear fuel cladding
US11664195B1 (en) * 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11688588B1 (en) 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
CN114481017B (zh) * 2022-02-11 2023-10-27 松山湖材料实验室 一种镀膜装置及清洗工艺
CN114481071B (zh) * 2022-02-11 2023-10-27 松山湖材料实验室 一种镀膜装置及dlc镀膜工艺
WO2023204960A2 (en) * 2022-04-01 2023-10-26 Board Of Regents, The University Of Texas System Techniques for enhanced confinement in magnetic fusion devices
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US636270A (en) 1898-12-15 1899-11-07 John H Loos Vacuum arc-lamp.
US3436332A (en) 1965-07-15 1969-04-01 Nippon Electric Co Stabilized low pressure triode sputtering apparatus
US3583899A (en) 1968-12-18 1971-06-08 Norton Co Sputtering apparatus
CH551498A (de) 1972-05-09 1974-07-15 Balzers Patent Beteilig Ag Anordnung zur aufstaeubung von stoffen auf unterlagen mittels einer elektrischen niederspannungsentladung.
US4155825A (en) 1977-05-02 1979-05-22 Fournier Paul R Integrated sputtering apparatus and method
US4111783A (en) 1977-11-08 1978-09-05 Bell Telephone Laboratories, Incorporated Triode sputtering system
CH619344B (de) 1977-12-23 Balzers Hochvakuum Verfahren zur herstellung goldfarbener ueberzuege.
US4269137A (en) 1979-03-19 1981-05-26 Xerox Corporation Pretreatment of substrates prior to thin film deposition
US4434038A (en) 1980-09-15 1984-02-28 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
US4448799A (en) * 1983-04-21 1984-05-15 Multi-Arc Vacuum Systems Inc. Arc-initiating trigger apparatus and method for electric arc vapor deposition coating systems
DD219354A1 (de) 1983-07-20 1985-02-27 Hochvakuum Dresden Veb Verfahren zur regelung der plasmaparameter in vakuumbeschichtungseinrichtungen mit bogenentladungen
US4588490A (en) 1985-05-22 1986-05-13 International Business Machines Corporation Hollow cathode enhanced magnetron sputter device
US4777908A (en) 1986-11-26 1988-10-18 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
US4730334A (en) 1987-01-05 1988-03-08 Collins George J Ultraviolet metal ion laser
JPS63282259A (ja) 1987-05-15 1988-11-18 Hitachi Ltd スパツタ装置
ES2022946T5 (es) * 1987-08-26 1996-04-16 Balzers Hochvakuum Procedimiento para la aportacion de capas sobre sustratos.
US4951604A (en) 1989-02-17 1990-08-28 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
JPH03126865A (ja) 1989-10-13 1991-05-30 Toshiba Corp 電子ビーム蒸発装置
US5250779A (en) 1990-11-05 1993-10-05 Balzers Aktiengesellschaft Method and apparatus for heating-up a substrate by means of a low voltage arc discharge and variable magnetic field
US5503725A (en) 1991-04-29 1996-04-02 Novatech Method and device for treatment of products in gas-discharge plasma
US5262032A (en) 1991-05-28 1993-11-16 Leybold Aktiengesellschaft Sputtering apparatus with rotating target and target cooling
DE4125365C1 (es) 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De
US5346600A (en) 1992-08-14 1994-09-13 Hughes Aircraft Company Plasma-enhanced magnetron-sputtered deposition of materials
DE4235199C1 (es) 1992-10-19 1993-04-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
CN1179617A (zh) 1996-09-30 1998-04-22 摩托罗拉公司 电子发射膜及方法
SE9704607D0 (sv) 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
US6300720B1 (en) 1997-04-28 2001-10-09 Daniel Birx Plasma gun and methods for the use thereof
US6692617B1 (en) 1997-05-08 2004-02-17 Applied Materials, Inc. Sustained self-sputtering reactor having an increased density plasma
JP4120974B2 (ja) * 1997-06-17 2008-07-16 キヤノンアネルバ株式会社 薄膜作製方法および薄膜作製装置
US6086962A (en) 1997-07-25 2000-07-11 Diamonex, Incorporated Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
US6238537B1 (en) 1998-08-06 2001-05-29 Kaufman & Robinson, Inc. Ion assisted deposition source
US6153067A (en) 1998-12-30 2000-11-28 Advanced Ion Technology, Inc. Method for combined treatment of an object with an ion beam and a magnetron plasma with a combined magnetron-plasma and ion-beam source
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US6929727B2 (en) 1999-04-12 2005-08-16 G & H Technologies, Llc Rectangular cathodic arc source and method of steering an arc spot
US6610184B2 (en) 2001-11-14 2003-08-26 Applied Materials, Inc. Magnet array in conjunction with rotating magnetron for plasma sputtering
US7300559B2 (en) 2000-04-10 2007-11-27 G & H Technologies Llc Filtered cathodic arc deposition method and apparatus
CA2305938C (en) 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Filtered cathodic arc deposition method and apparatus
DE10018143C5 (de) 2000-04-12 2012-09-06 Oerlikon Trading Ag, Trübbach DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems
JP4085593B2 (ja) 2001-03-29 2008-05-14 日新電機株式会社 真空アーク蒸着装置
EP1554412B1 (en) 2002-09-19 2013-08-14 General Plasma, Inc. Plasma enhanced chemical vapor deposition apparatus
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
SE0302045D0 (sv) 2003-07-10 2003-07-10 Chemfilt R & D Ab Work piece processing by pulsed electric discharges in solid-gas plasmas
US8500975B2 (en) 2004-01-07 2013-08-06 Applied Materials, Inc. Method and apparatus for sputtering onto large flat panels
DE502005009129D1 (de) 2005-04-12 2010-04-15 Hauzer Techno Coating B V Vorrichtung zur Plasmabehandlung und/oder zur Beschichtung von Werkstücken
US20090214787A1 (en) 2005-10-18 2009-08-27 Southwest Research Institute Erosion Resistant Coatings
CN101326303B (zh) 2005-10-18 2012-07-18 西南研究院 抗侵蚀涂层
US20070138003A1 (en) 2005-12-21 2007-06-21 Annaqin Llc Lamination and conversion process and apparatus
DE102006020004B4 (de) 2006-04-26 2011-06-01 Systec System- Und Anlagentechnik Gmbh & Co.Kg Vorrichtung und Verfahren zur homogenen PVD-Beschichtung
US7498587B2 (en) 2006-05-01 2009-03-03 Vapor Technologies, Inc. Bi-directional filtered arc plasma source
RU2448388C2 (ru) 2006-05-16 2012-04-20 Эрликон Трейдинг Аг, Трюббах Электродуговой источник и магнитное приспособление
US7939172B2 (en) 2006-05-17 2011-05-10 G & H Technologies, Llc Wear resistant vapor deposited coating, method of coating deposition and applications therefor
JP2008274334A (ja) 2007-04-26 2008-11-13 Sumitomo Heavy Ind Ltd 反射防止膜成膜装置及び反射防止膜製造方法
CA2686445C (en) 2007-05-25 2015-01-27 Oerlikon Trading Ag, Truebbach Vacuum treatment installation and vacuum treatment method
WO2009079358A1 (en) 2007-12-14 2009-06-25 The Regents Of The University Of California Very low pressure high power impulse triggered magnetron sputtering
CA2763646C (en) 2009-05-29 2015-11-17 Toshiba Mitsubishi-Electric Industrial Systems Corporation Uninterruptible power supply device
US9279187B2 (en) 2009-11-11 2016-03-08 Southwest Research Institute Method for applying a diffusion barrier interlayer for high temperature components
US20110226617A1 (en) 2010-03-22 2011-09-22 Applied Materials, Inc. Dielectric deposition using a remote plasma source
EP2431995A1 (en) 2010-09-17 2012-03-21 Asociacion de la Industria Navarra (AIN) Ionisation device
US8895115B2 (en) 2010-11-09 2014-11-25 Southwest Research Institute Method for producing an ionized vapor deposition coating
CN103459652A (zh) 2010-11-11 2013-12-18 Nci瑞士纳米涂层公司 用于表面处理的设备和方法
US20120199070A1 (en) 2011-02-03 2012-08-09 Vapor Technologies, Inc. Filter for arc source
US9412569B2 (en) 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
RU2662912C2 (ru) 2013-03-15 2018-07-31 Вейпор Текнолоджиз Инк. Осаждение из паровой фазы для нанесения покрытия с погружением в дуговую плазму низкого давления и ионная обработка

Also Published As

Publication number Publication date
US20140076716A1 (en) 2014-03-20
US9793098B2 (en) 2017-10-17
AR104551A1 (es) 2017-07-26
JP2017031501A (ja) 2017-02-09
CA2928389A1 (en) 2016-11-07
US20160326635A1 (en) 2016-11-10

Similar Documents

Publication Publication Date Title
CL2016001093A1 (es) Procesos asistidos de plasma de descarga de arco a distancia
CL2013002656A1 (es) Sistema de recubrimiento que comprende una camara de vacio y un conjunto de revestimiento que incluye una fuente de deposicion catodica con magnetron, un soporte de sustrato, un conjunto de camara de catodo que incluye un objetivo del catodo, un anodo primario y un escudo, un anodo remoto y una fuente de alimentacion primaria.
MY183557A (en) Plasma cvd device and plasma cvd method
AR095602A1 (es) Sistema y método de recubrimiento de un sustrato
IN2014DN09995A (es)
IL255910B (en) Produced plasma light source - laser with high efficiency
SG10201504088VA (en) Hollow cathode discharge (hcd) suppressing capacitively coupled plasma electrode and gas distribution faceplate
CL2012000295A1 (es) Filtro para un sistema de deposición por arco, que comprende un cátodo alargado, ánodo, y al menos un substrato y un número par de ensambles de conductos simétricamente colocados alrededor alternativamente conectados a la parte superior e inferior del cátodo; y sistema de deposición por arco que comprende dicho filtro.
IN2012DE00624A (es)
NL1036272A1 (nl) Radiation source, lithographic apparatus and device manufacturing method.
MX368879B (es) Dispositivo de bombardeo de iones y metodo para usar el mismo para limpiar una superficie de sustrato.
AR093588A1 (es) Estacion de transferencia para alimentar con energia electrica, asi como tambien parque de instalaciones de energia eolica con una estacion de transferencia de este tipo
UA112145C2 (uk) Джерело плазми
WO2013139773A3 (en) Lamp unit power supply system
ES2539975T3 (es) Procedimiento para la pasivación con hidrógeno de unas capas de semiconductores
TW201614709A (en) Systems and methods for producing energetic neutrals
WO2012169750A3 (ko) 방송용 조명장치
EP3143845A4 (en) Energy efficient high power plasma torch
IN2014DE01279A (es)
PH12015502279A1 (en) Plasma perforation
CL2011001158S1 (es) Parlante de cuerpo paralelepipedico rectangular; la pared posterior del cuerpo incluye centradamente una zona rehundida de contorno rectangular; la pared inferior del cuerpo incluye una serie de cuatro resaltes de forma cilindrica dispuestos cerca de los vertices; la pared frontal del cuerpo incluye en toda su superficie un resalte frontal.
AR080510A1 (es) Aparato para procesar dispositivos oftalmicos en fase de vapor
PE20180393A1 (es) Proceso para la estabilizacion de mercurio metalico
WO2011119471A3 (en) Dc voltage charging of cathode for plasma striking
PE20180913A1 (es) Modulo de encendido de aparato de gas