NL1036272A1 - Radiation source, lithographic apparatus and device manufacturing method. - Google Patents

Radiation source, lithographic apparatus and device manufacturing method. Download PDF

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Publication number
NL1036272A1
NL1036272A1 NL1036272A NL1036272A NL1036272A1 NL 1036272 A1 NL1036272 A1 NL 1036272A1 NL 1036272 A NL1036272 A NL 1036272A NL 1036272 A NL1036272 A NL 1036272A NL 1036272 A1 NL1036272 A1 NL 1036272A1
Authority
NL
Netherlands
Prior art keywords
fuel
electrode
radiation source
device manufacturing
lithographic apparatus
Prior art date
Application number
NL1036272A
Other languages
English (en)
Inventor
Vadim Yevgenyevich Banine
Maarten Marinus Johannes Herpen
Wouter Anthon Soer
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of NL1036272A1 publication Critical patent/NL1036272A1/nl

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL1036272A 2007-12-19 2008-12-03 Radiation source, lithographic apparatus and device manufacturing method. NL1036272A1 (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US611707P 2007-12-19 2007-12-19

Publications (1)

Publication Number Publication Date
NL1036272A1 true NL1036272A1 (nl) 2009-06-22

Family

ID=40427194

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1036272A NL1036272A1 (nl) 2007-12-19 2008-12-03 Radiation source, lithographic apparatus and device manufacturing method.

Country Status (8)

Country Link
US (1) US8416391B2 (nl)
EP (1) EP2220915B1 (nl)
JP (1) JP2011508377A (nl)
KR (1) KR20100102170A (nl)
CN (1) CN101911839B (nl)
NL (1) NL1036272A1 (nl)
TW (1) TWI414213B (nl)
WO (1) WO2009078722A1 (nl)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1036614A1 (nl) * 2008-03-21 2009-09-22 Asml Netherlands Bv A target material, a source, an EUV lithographic apparatus and a device manufacturing method using the same.
JP5257480B2 (ja) * 2011-03-28 2013-08-07 ウシオ電機株式会社 光処理装置
US9516732B2 (en) * 2011-09-02 2016-12-06 Asml Netherlands B.V. Radiation source
US8890099B2 (en) * 2011-09-02 2014-11-18 Asml Netherlands B.V. Radiation source and method for lithographic apparatus for device manufacture
WO2013029902A1 (en) * 2011-09-02 2013-03-07 Asml Netherlands B.V. Radiation source and lithographic apparatus
TWI596384B (zh) * 2012-01-18 2017-08-21 Ａｓｍｌ荷蘭公司 光源收集器元件、微影裝置及元件製造方法
DE102013002064A1 (de) * 2012-02-11 2013-08-14 Media Lario S.R.L. Quell-kollektor-module für euv-lithographie unter verwendung eines gic-spiegels und einer lpp-quelle
JP6174606B2 (ja) * 2012-03-07 2017-08-02 エーエスエムエル ネザーランズ ビー．ブイ． 放射源及びリソグラフィ装置
EP2816876B1 (en) * 2013-06-21 2016-02-03 Ushio Denki Kabushiki Kaisha EUV discharge lamp with moving protective component
DE102013109048A1 (de) * 2013-08-21 2015-02-26 Ushio Denki Kabushiki Kaisha Verfahren und Vorrichtung zur Kühlung von Strahlungsquellen auf Basis eines Plasmas
EP3152983A1 (de) * 2014-06-06 2017-04-12 TRUMPF Lasersystems for Semiconductor Manufacturing GmbH Vorrichtung und verfahren zur überwachung eines laserstrahls
JP6477179B2 (ja) * 2015-04-07 2019-03-06 ウシオ電機株式会社 放電電極及び極端紫外光光源装置
CN105376919B (zh) * 2015-11-06 2017-08-01 华中科技大学 一种激光诱导液滴靶放电产生等离子体的装置
JP7405000B2 (ja) 2020-05-15 2023-12-26 ウシオ電機株式会社 極端紫外光光源装置および極端紫外光の生成方法
KR20240076128A (ko) * 2022-11-23 2024-05-30 주식회사 월드빔솔루션 전자빔 기반 극자외선 광원 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
ATE123885T1 (de) 1990-05-02 1995-06-15 Fraunhofer Ges Forschung Belichtungsvorrichtung.
KR100459813B1 (ko) 1997-01-29 2004-12-04 마이크로닉 레이저 시스템즈 에이비 집속된 레이저 광선에 의해 감광 물질로 코팅된 기판상에 구조체를 형성시키는 방법 및 장치
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
JP2001108799A (ja) * 1999-10-08 2001-04-20 Nikon Corp Ｘ線発生装置、ｘ線露光装置及び半導体デバイスの製造方法
JP2002006096A (ja) * 2000-06-23 2002-01-09 Nikon Corp 電磁波発生装置、これを用いた半導体製造装置並びに半導体デバイスの製造方法
BRPI0407155A (pt) * 2003-01-31 2006-02-07 Dow Corning Ireland Ltd Conjunto de eletrodo de geração de plasma
DE10342239B4 (de) * 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
JP2006253122A (ja) * 2005-02-09 2006-09-21 Ideal Star Inc プラズマ源、イオン源、及び、イオン生成方法
DE102005030304B4 (de) 2005-06-27 2008-06-26 Xtreme Technologies Gmbh Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter Strahlung
DE102005039849B4 (de) * 2005-08-19 2011-01-27 Xtreme Technologies Gmbh Vorrichtung zur Strahlungserzeugung mittels einer Gasentladung
JP2007200919A (ja) * 2006-01-23 2007-08-09 Ushio Inc 極端紫外光光源装置
JP2007305908A (ja) * 2006-05-15 2007-11-22 Ushio Inc 極端紫外光光源装置

Also Published As

Publication number Publication date
JP2011508377A (ja) 2011-03-10
CN101911839B (zh) 2013-01-23
KR20100102170A (ko) 2010-09-20
TW200934308A (en) 2009-08-01
EP2220915B1 (en) 2012-06-27
WO2009078722A1 (en) 2009-06-25
CN101911839A (zh) 2010-12-08
US20110134405A1 (en) 2011-06-09
TWI414213B (zh) 2013-11-01
US8416391B2 (en) 2013-04-09
EP2220915A1 (en) 2010-08-25

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