UA112145C2 - Джерело плазми - Google Patents

Джерело плазми

Info

Publication number
UA112145C2
UA112145C2 UAA201508171A UAA201508171A UA112145C2 UA 112145 C2 UA112145 C2 UA 112145C2 UA A201508171 A UAA201508171 A UA A201508171A UA A201508171 A UAA201508171 A UA A201508171A UA 112145 C2 UA112145 C2 UA 112145C2
Authority
UA
Ukraine
Prior art keywords
electrode
magnets
plasma source
periphery
coating
Prior art date
Application number
UAA201508171A
Other languages
English (en)
Inventor
Флорін Даніель Думініка
Венсан Леклерк
Ерік Сільберберг
Ален Даніель
Original Assignee
Арселормітталь Інвестігасіон І Десаррольо Сл
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Арселормітталь Інвестігасіон І Десаррольо Сл filed Critical Арселормітталь Інвестігасіон І Десаррольо Сл
Publication of UA112145C2 publication Critical patent/UA112145C2/uk

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Джерело (1) плазми призначене для нанесення покриття на підкладку (9) і виконане з можливістю з'єднання з джерелом (Р) енергії, що містить електрод (2), магнітний вузол (4), який знаходиться на периферії згаданого електрода і містить сукупність магнітів, з'єднаних між собою магнітною опорою (46), що включає в себе щонайменше перший і другий центральні магніти (43, 44) і щонайменше один головний магніт (45), електрично ізолюючу оболонку (5), розташовану таким чином, щоб оточувати електрод і магніти.
UAA201508171A 2013-02-06 2013-06-02 Джерело плазми UA112145C2 (uk)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2013/052340 WO2014121831A1 (fr) 2013-02-06 2013-02-06 Source de plasma

Publications (1)

Publication Number Publication Date
UA112145C2 true UA112145C2 (uk) 2016-07-25

Family

ID=47714063

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA201508171A UA112145C2 (uk) 2013-02-06 2013-06-02 Джерело плазми

Country Status (16)

Country Link
US (1) US9805918B2 (uk)
EP (1) EP2954758B1 (uk)
JP (1) JP6134394B2 (uk)
KR (1) KR101797157B1 (uk)
CN (1) CN104996000B (uk)
BR (1) BR112015018598B1 (uk)
CA (1) CA2899229C (uk)
DK (1) DK2954758T5 (uk)
ES (1) ES2617962T3 (uk)
MA (1) MA38317A1 (uk)
MX (1) MX347720B (uk)
PL (1) PL2954758T3 (uk)
PT (1) PT2954758T (uk)
RU (1) RU2636389C2 (uk)
UA (1) UA112145C2 (uk)
WO (1) WO2014121831A1 (uk)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2620442C2 (ru) * 2015-05-29 2017-05-25 Открытое акционерное общество "ОКБ-Планета" ОАО "ОКБ-Планета" Источник ионов
KR20170067246A (ko) * 2015-12-08 2017-06-16 (주) 나인테크 인라인 증착장치용 리니어 소스
EP3285278A1 (en) * 2016-08-16 2018-02-21 FEI Company Magnet used with a plasma cleaner
KR101874495B1 (ko) * 2016-10-05 2018-07-04 (주)나인테크 Ｏｌｅｄ 보호막 증착용 인라인 원자층 증착장치
KR102085337B1 (ko) * 2017-07-25 2020-04-23 주식회사 지비라이트 플라즈마 화학 기상 증착 장치
KR102085335B1 (ko) * 2017-07-25 2020-03-05 주식회사 지비라이트 플라즈마 화학 기상 증착 장치
CN110331373A (zh) * 2019-07-04 2019-10-15 国家电网有限公司 一种实现固体绝缘件表面电导率调控的装置及方法
CN111304620A (zh) * 2020-04-24 2020-06-19 北京北方华创微电子装备有限公司 半导体加工设备及其磁控管机构
DE102020114162B3 (de) * 2020-05-27 2021-07-22 VON ARDENNE Asset GmbH & Co. KG Ionenquelle und Verfahren
CN111916326A (zh) * 2020-06-09 2020-11-10 哈尔滨工业大学 一种具有防护功能的离子源的导磁套筒结构

Family Cites Families (21)

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JPH0249385B2 (ja) * 1986-04-09 1990-10-30 Ulvac Corp Purazumacvdsochi
JP2537210B2 (ja) * 1986-09-18 1996-09-25 株式会社東芝 高密度プラズマの発生装置
US5508492A (en) 1991-03-18 1996-04-16 Aluminum Company Of America Apparatus for extending broad metal surface areas with a magnetically impelled arc
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
JP3655334B2 (ja) * 1994-12-26 2005-06-02 松下電器産業株式会社 マグネトロンスパッタリング装置
US6153067A (en) * 1998-12-30 2000-11-28 Advanced Ion Technology, Inc. Method for combined treatment of an object with an ion beam and a magnetron plasma with a combined magnetron-plasma and ion-beam source
WO2001036701A1 (en) * 1999-11-18 2001-05-25 Tokyo Electron Limited High target utilization magnetic arrangement for a truncated conical sputtering target
US6251242B1 (en) * 2000-01-21 2001-06-26 Applied Materials, Inc. Magnetron and target producing an extended plasma region in a sputter reactor
US6451177B1 (en) * 2000-01-21 2002-09-17 Applied Materials, Inc. Vault shaped target and magnetron operable in two sputtering modes
JP2001267311A (ja) * 2000-03-14 2001-09-28 Sanyo Shinku Kogyo Kk Ｔｆｔ用ゲート膜等の成膜方法とその装置
AU2001292938A1 (en) * 2001-02-23 2002-09-12 Kaufman & Robinson Inc. Magnetic field for small closed-drift thruster
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
WO2004027825A2 (en) 2002-09-19 2004-04-01 Applied Process Technologies, Inc. Beam plasma source
US6896775B2 (en) * 2002-10-29 2005-05-24 Zond, Inc. High-power pulsed magnetically enhanced plasma processing
US7084573B2 (en) 2004-03-05 2006-08-01 Tokyo Electron Limited Magnetically enhanced capacitive plasma source for ionized physical vapor deposition
WO2006076345A2 (en) * 2005-01-13 2006-07-20 Cardinal Cg Company Reduced maintenance sputtering chambers
US7420182B2 (en) 2005-04-27 2008-09-02 Busek Company Combined radio frequency and hall effect ion source and plasma accelerator system
US20070205096A1 (en) * 2006-03-06 2007-09-06 Makoto Nagashima Magnetron based wafer processing
WO2009071667A1 (en) * 2007-12-07 2009-06-11 Oc Oerlikon Balzers Ag Reactive sputtering with hipims
WO2012114941A1 (ja) * 2011-02-25 2012-08-30 東レ株式会社 プラズマ処理用マグネトロン電極
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Also Published As

Publication number Publication date
US9805918B2 (en) 2017-10-31
KR101797157B1 (ko) 2017-11-13
WO2014121831A1 (fr) 2014-08-14
DK2954758T5 (en) 2017-03-20
EP2954758B1 (fr) 2016-12-07
MX2015010104A (es) 2016-04-27
CN104996000B (zh) 2018-05-25
RU2015134534A (ru) 2017-03-13
CA2899229A1 (fr) 2014-08-14
KR20150127038A (ko) 2015-11-16
JP6134394B2 (ja) 2017-05-24
EP2954758A1 (fr) 2015-12-16
ES2617962T3 (es) 2017-06-20
CN104996000A (zh) 2015-10-21
PL2954758T3 (pl) 2017-06-30
PT2954758T (pt) 2017-03-15
BR112015018598A2 (pt) 2017-07-18
CA2899229C (fr) 2018-04-03
BR112015018598B1 (pt) 2020-11-03
RU2636389C2 (ru) 2017-11-23
DK2954758T3 (en) 2017-03-06
MA38317A1 (fr) 2016-09-30
MX347720B (es) 2017-05-09
JP2016513336A (ja) 2016-05-12
US20160005575A1 (en) 2016-01-07

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