JP6134394B2 - プラズマ源および当該プラズマ源を備える真空蒸着装置 - Google Patents
プラズマ源および当該プラズマ源を備える真空蒸着装置 Download PDFInfo
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- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
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- 239000010936 titanium Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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- 239000004809 Teflon Substances 0.000 description 1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
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- 230000004913 activation Effects 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 229910001573 adamantine Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
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- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000008397 galvanized steel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
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- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H01—ELECTRIC ELEMENTS
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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- General Chemical & Material Sciences (AREA)
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- Epidemiology (AREA)
- Public Health (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Investigating Or Analysing Biological Materials (AREA)
Description
a)基板が配され得る位置の向かい側に孔まで延びる放電キャビティを画定しており、その断面は放電キャビティ内に突出し第1および第2中央壁ならびにこの2つの中央壁を繋ぎ合わせる最上部を備える中央部分が設けてある底部の各側に配された第1および第2側壁を備えている電極と、
b)該電極の外周に位置しており、磁石ブラケットにより接続され放電キャビティに向かう露出極板および磁石ブラケットに向かう被保護極板をそれぞれ備える一組の磁石を備えており、
i)第1側壁および第2側壁それぞれの後方において孔の近傍に配置されており自身の露出極板が同一の極性を有するような向きに配置されている少なくとも第1および第2側方磁石と、
ii)第1中央壁および第2中央壁それぞれの後方に配置されており自身の露出極板が側方磁石の露出極板とは逆の極性になるような向きに配置されている少なくとも第1および第2中央磁石と、
iii)最上部の後方に配置されており自身の露出極板が側方磁石の露出極板と同一の極性になるような向きに配置されている少なくとも1つの先端磁石と
を備えている磁石組立体と、
c)前記孔を塞ぐことなく電極および磁石を囲むように配置された電気絶縁性容器と
を備える。
−まず、側方磁石の被保護表面の極性とは逆の極性を持つ被保護表面を有する中央磁石43、44は、中央部分の基部において磁石ブラケットに取り付けることが可能であり、側方磁石の被保護表面と同一の極性を有することになる。
−この取り付けにより、中央磁石の被保護表面に接触するようになった磁石ブラケット中央部分の先端部の極性が逆になる。
a)主にプラズマ源の外部において孔の近傍に位置する高密度な外向き力線を持つ領域100と、
b)放電キャビティ内の孔および中央部分最上部の間に位置しており磁場が生じない2つの領域101と、
c)中央部分の各側に位置しており高密度な内向き力線を有する2つの領域102と
を生じる。
−電極が陰極として機能する場合には電子源;
−電極が陽極として機能する場合にはイオン源
として交互に作動し、陰極から作られる電子によりイオン化されたガスは陰極および基板の方向に放出される。
Claims (15)
- 基板(9)上に被覆物を蒸着させることを目的としており電力源(P)に接続可能であるプラズマ源(1)において、
a)前記基板が配され得る位置の向かい側に孔(6)まで延びる放電キャビティ(3)を画定する電極(2)であって、断面が前記放電キャビティ内に突出し第1および第2中央壁(26、27)ならびに前記第1および第2中央壁(26、27)を繋ぎ合わせる最上部(28)を備える中央部分が設けてある底部(23、24)のいずれかに配された第1および第2側壁(21、22)を備える電極(2)と、
b)前記電極の外周に位置し、磁石ブラケット(46)により接続され前記放電キャビティに向かう露出極板および前記磁石ブラケットに向かう被保護極板をそれぞれ備える一組の磁石を備える磁石組立体(4)であって、
i)前記第1側壁(21)および第2側壁(22)それぞれの後方において前記孔(6)の両側に配置されており、自身の露出極板が同一の極性を有するような向きに配置されている少なくとも第1および第2側方磁石(41、42)と、
ii)前記第1中央壁(26)および第2中央壁(27)それぞれの後方に配置されており、自身の露出極板が前記第1および第2側方磁石(41、42)の前記露出極板とは逆の極性になるような向きに配置されている少なくとも第1および第2中央磁石(43、44)と、
iii)前記最上部(28)の後方に配置されており、自身の露出極板が前記第1および第2側方磁石(41、42)の前記露出極板と同一の極性になるような向きに配置されている少なくとも1つの先端磁石(45)とを備える磁石組立体(4)と、
c)前記孔を塞ぐことなく前記電極および前記磁石を囲むように配置された電気絶縁性容器(5)と
を備えるプラズマ源。 - 前記孔(6)は前記放電キャビティと同一の幅を有する請求項1に記載のプラズマ源。
- 前記磁石ブラケットは、前記先端磁石(45)の前記被保護極板が前記磁石ブラケットと十分に接触するように拡大端部を備えた中桟を持つE字形である請求項1または2に記載のプラズマ源。
- 前記磁石ブラケットは単一部品から成る請求項1乃至3のいずれかに記載のプラズマ源。
- 前記磁石および電極を冷却する冷却手段(7)をさらに備える請求項1乃至4のいずれかに記載のプラズマ源。
- 前記冷却手段は、前記電極と前記磁石組立体との間に配置されており、熱交換流体の循環を目的としている空間(7)を備える請求項5に記載のプラズマ源。
- 前記冷却手段(7)はパイプを備える請求項5に記載のプラズマ源。
- 前記放電キャビティ(3)内にイオン化可能ガスを注入する注入手段(8)をさらに備える請求項1乃至7のいずれかに記載のプラズマ源。
- 前記注入手段(8)は前記底部(23、24)の脇に配されている請求項8に記載のプラズマ源。
- 請求項1乃至9のいずれかに記載のプラズマ源を備える真空蒸着装置。
- 請求項1乃至9のいずれかに記載のプラズマ源(1)を2つ備えた真空蒸着装置。
- 前記2つのプラズマ源の対称軸は20〜110°の角度αを形成する請求項11に記載の真空蒸着装置。
- 前記2つのプラズマ源を第1プラズマ源および第2プラズマ源としたとき、前記第1プラズマ源の前記第1および第2側方磁石の相対する極板は、前記第2プラズマ源の前記第1および第2側方磁石(41、42)の相対する極板の極性とは逆の極性を有する請求項11または12に記載の真空蒸着装置。
- 前駆体ガスを注入する注入器(10)をさらに備える請求項10乃至13のいずれかに記載の真空蒸着装置。
- 前記基板(9)に対して前記プラズマ源(1)とは逆側に位置するように前記孔(6)に面して配されており、前記第1および第2側方磁石(41、42)の相対する極板とは逆の極性の前記プラズマ源(1)に向かう極板を有している補助的磁石(11)をさらに備える請求項10に記載の真空蒸着装置。
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PCT/EP2013/052340 WO2014121831A1 (fr) | 2013-02-06 | 2013-02-06 | Source de plasma |
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Country | Link |
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US (1) | US9805918B2 (ja) |
EP (1) | EP2954758B1 (ja) |
JP (1) | JP6134394B2 (ja) |
KR (1) | KR101797157B1 (ja) |
CN (1) | CN104996000B (ja) |
BR (1) | BR112015018598B1 (ja) |
CA (1) | CA2899229C (ja) |
DK (1) | DK2954758T5 (ja) |
ES (1) | ES2617962T3 (ja) |
MA (1) | MA38317A1 (ja) |
MX (1) | MX347720B (ja) |
PL (1) | PL2954758T3 (ja) |
PT (1) | PT2954758T (ja) |
RU (1) | RU2636389C2 (ja) |
UA (1) | UA112145C2 (ja) |
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RU2620442C2 (ru) * | 2015-05-29 | 2017-05-25 | Открытое акционерное общество "ОКБ-Планета" ОАО "ОКБ-Планета" | Источник ионов |
KR20170067246A (ko) * | 2015-12-08 | 2017-06-16 | (주) 나인테크 | 인라인 증착장치용 리니어 소스 |
EP3285278A1 (en) * | 2016-08-16 | 2018-02-21 | FEI Company | Magnet used with a plasma cleaner |
KR101874495B1 (ko) * | 2016-10-05 | 2018-07-04 | (주)나인테크 | Oled 보호막 증착용 인라인 원자층 증착장치 |
KR102085337B1 (ko) * | 2017-07-25 | 2020-04-23 | 주식회사 지비라이트 | 플라즈마 화학 기상 증착 장치 |
KR102085335B1 (ko) * | 2017-07-25 | 2020-03-05 | 주식회사 지비라이트 | 플라즈마 화학 기상 증착 장치 |
CN110331373A (zh) * | 2019-07-04 | 2019-10-15 | 国家电网有限公司 | 一种实现固体绝缘件表面电导率调控的装置及方法 |
CN111304620A (zh) * | 2020-04-24 | 2020-06-19 | 北京北方华创微电子装备有限公司 | 半导体加工设备及其磁控管机构 |
DE102020114162B3 (de) * | 2020-05-27 | 2021-07-22 | VON ARDENNE Asset GmbH & Co. KG | Ionenquelle und Verfahren |
CN111916326A (zh) * | 2020-06-09 | 2020-11-10 | 哈尔滨工业大学 | 一种具有防护功能的离子源的导磁套筒结构 |
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DK2954758T5 (en) | 2017-03-20 |
EP2954758B1 (fr) | 2016-12-07 |
CN104996000B (zh) | 2018-05-25 |
CA2899229C (fr) | 2018-04-03 |
BR112015018598B1 (pt) | 2020-11-03 |
ES2617962T3 (es) | 2017-06-20 |
US20160005575A1 (en) | 2016-01-07 |
MX2015010104A (es) | 2016-04-27 |
UA112145C2 (uk) | 2016-07-25 |
EP2954758A1 (fr) | 2015-12-16 |
US9805918B2 (en) | 2017-10-31 |
JP2016513336A (ja) | 2016-05-12 |
PT2954758T (pt) | 2017-03-15 |
WO2014121831A1 (fr) | 2014-08-14 |
CA2899229A1 (fr) | 2014-08-14 |
RU2636389C2 (ru) | 2017-11-23 |
MX347720B (es) | 2017-05-09 |
DK2954758T3 (en) | 2017-03-06 |
KR20150127038A (ko) | 2015-11-16 |
MA38317A1 (fr) | 2016-09-30 |
RU2015134534A (ru) | 2017-03-13 |
CN104996000A (zh) | 2015-10-21 |
KR101797157B1 (ko) | 2017-11-13 |
PL2954758T3 (pl) | 2017-06-30 |
BR112015018598A2 (pt) | 2017-07-18 |
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