JP2015216360A5 - - Google Patents
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- JP2015216360A5 JP2015216360A5 JP2015063653A JP2015063653A JP2015216360A5 JP 2015216360 A5 JP2015216360 A5 JP 2015216360A5 JP 2015063653 A JP2015063653 A JP 2015063653A JP 2015063653 A JP2015063653 A JP 2015063653A JP 2015216360 A5 JP2015216360 A5 JP 2015216360A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- layer
- application example
- mtj
- stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 description 42
- 238000005530 etching Methods 0.000 description 38
- 239000003989 dielectric material Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910019236 CoFeB Inorganic materials 0.000 description 2
- 229910019041 PtMn Inorganic materials 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 nitride compounds Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461971032P | 2014-03-27 | 2014-03-27 | |
| US61/971,032 | 2014-03-27 | ||
| US14/325,190 | 2014-07-07 | ||
| US14/325,190 US9257638B2 (en) | 2014-03-27 | 2014-07-07 | Method to etch non-volatile metal materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015216360A JP2015216360A (ja) | 2015-12-03 |
| JP2015216360A5 true JP2015216360A5 (enExample) | 2018-05-10 |
| JP6789614B2 JP6789614B2 (ja) | 2020-11-25 |
Family
ID=54012662
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015063653A Active JP6789614B2 (ja) | 2014-03-27 | 2015-03-26 | 不揮発性金属材料をエッチングする方法 |
| JP2015063656A Active JP6557490B2 (ja) | 2014-03-27 | 2015-03-26 | 不揮発性金属材料のエッチング方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015063656A Active JP6557490B2 (ja) | 2014-03-27 | 2015-03-26 | 不揮発性金属材料のエッチング方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9257638B2 (enExample) |
| JP (2) | JP6789614B2 (enExample) |
| KR (2) | KR102377668B1 (enExample) |
| CN (2) | CN108682737A (enExample) |
| SG (2) | SG10201502437TA (enExample) |
| TW (2) | TWI651773B (enExample) |
Families Citing this family (64)
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| US9502642B2 (en) | 2015-04-10 | 2016-11-22 | Micron Technology, Inc. | Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions |
| US9520553B2 (en) * | 2015-04-15 | 2016-12-13 | Micron Technology, Inc. | Methods of forming a magnetic electrode of a magnetic tunnel junction and methods of forming a magnetic tunnel junction |
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| US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
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| US9960346B2 (en) | 2015-05-07 | 2018-05-01 | Micron Technology, Inc. | Magnetic tunnel junctions |
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| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
| US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
| CN106548936B (zh) * | 2015-09-23 | 2022-04-22 | 北京北方华创微电子装备有限公司 | 一种金属层的刻蚀方法 |
| US10648087B2 (en) | 2015-11-10 | 2020-05-12 | L'Air Liquide, SociétéAnonyme pour l'Exploitation et l'Etude des Procédés Georges Claude | Etching reactants and plasma-free etching processes using the same |
| US10157742B2 (en) * | 2015-12-31 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for mandrel and spacer patterning |
| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
| US10229837B2 (en) | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| US9953843B2 (en) * | 2016-02-05 | 2018-04-24 | Lam Research Corporation | Chamber for patterning non-volatile metals |
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| US10230042B2 (en) | 2016-03-03 | 2019-03-12 | Toshiba Memory Corporation | Magnetoresistive element and method of manufacturing the same |
| US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
| US9680089B1 (en) | 2016-05-13 | 2017-06-13 | Micron Technology, Inc. | Magnetic tunnel junctions |
| US9799519B1 (en) * | 2016-06-24 | 2017-10-24 | International Business Machines Corporation | Selective sputtering with light mass ions to sharpen sidewall of subtractively patterned conductive metal layer |
| US9837312B1 (en) | 2016-07-22 | 2017-12-05 | Lam Research Corporation | Atomic layer etching for enhanced bottom-up feature fill |
| KR102511914B1 (ko) | 2016-08-04 | 2023-03-21 | 삼성전자주식회사 | 자기 기억 소자 및 이의 제조 방법 |
| US10103196B2 (en) | 2016-08-30 | 2018-10-16 | Micron Technology, Inc. | Methods of forming magnetic memory cells, and methods of forming arrays of magnetic memory cells |
| KR102410571B1 (ko) | 2016-12-09 | 2022-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 열적 원자층 식각 공정 |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| KR102638610B1 (ko) | 2017-01-11 | 2024-02-22 | 삼성전자주식회사 | 자기 메모리 장치 |
| US10297746B2 (en) | 2017-04-05 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post treatment to reduce shunting devices for physical etching process |
| US20200144074A1 (en) | 2017-04-13 | 2020-05-07 | Basf Se | Process for the etching metal- or semimetal-containing materials |
| US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
| US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
| US9997371B1 (en) | 2017-04-24 | 2018-06-12 | Lam Research Corporation | Atomic layer etch methods and hardware for patterning applications |
| US10242885B2 (en) * | 2017-05-26 | 2019-03-26 | Applied Materials, Inc. | Selective dry etching of metal films comprising multiple metal oxides |
| WO2018231695A1 (en) * | 2017-06-13 | 2018-12-20 | Tokyo Electron Limited | Process for patterning a magnetic tunnel junction |
| JP7366019B2 (ja) * | 2017-12-14 | 2023-10-20 | アプライド マテリアルズ インコーポレイテッド | エッチング残留物の少ない金属酸化物のエッチング方法 |
| WO2019190781A1 (en) | 2018-03-30 | 2019-10-03 | Lam Research Corporation | Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials |
| US10714681B2 (en) * | 2018-10-19 | 2020-07-14 | International Business Machines Corporation | Embedded magnetic tunnel junction pillar having reduced height and uniform contact area |
| JP7310146B2 (ja) * | 2019-01-16 | 2023-07-19 | 東京エレクトロン株式会社 | ハードマスク付き半導体デバイスの製造用の基板及び半導体デバイスの製造方法 |
| CN109786241B (zh) * | 2019-02-03 | 2022-09-27 | 南通大学 | 一种微损伤减缓铝刻蚀侧腐的方法 |
| CN109801844A (zh) * | 2019-02-03 | 2019-05-24 | 南通大学 | 一种金属刻槽方法 |
| CN113519071B (zh) | 2019-02-28 | 2025-04-22 | 朗姆研究公司 | 利用侧壁清洁的离子束蚀刻 |
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| JP7548740B2 (ja) * | 2019-07-18 | 2024-09-10 | エーエスエム・アイピー・ホールディング・ベー・フェー | 中間チャンバーを備える半導体気相エッチング装置 |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| US11688604B2 (en) * | 2019-07-26 | 2023-06-27 | Tokyo Electron Limited | Method for using ultra thin ruthenium metal hard mask for etching profile control |
| CY2004010I2 (el) | 2019-08-29 | 2009-11-04 | Novartis Ag | Phenyl carbamate |
| US11424134B2 (en) * | 2019-09-19 | 2022-08-23 | Applied Materials, Inc. | Atomic layer etching of metals |
| EP3822996A1 (en) * | 2019-11-12 | 2021-05-19 | Abiomed Europe GmbH | Corrosion-resistant permanent magnet for an intravascular blood pump |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
| US11502246B2 (en) | 2020-06-04 | 2022-11-15 | Samsung Electronics Co., Ltd. | Magnetoresistive device, magnetic memory, and method of fabricating a magnetoresistive device |
| US11737289B2 (en) | 2020-12-09 | 2023-08-22 | International Business Machines Corporation | High density ReRAM integration with interconnect |
| WO2022154901A1 (en) * | 2021-01-15 | 2022-07-21 | Lam Research Corporation | Metal etch |
| CN116724143A (zh) * | 2021-01-19 | 2023-09-08 | 朗姆研究公司 | 具有金属蚀刻残留物的室部件的清洁方法 |
| US20230420267A1 (en) * | 2022-05-27 | 2023-12-28 | Tokyo Electron Limited | Oxygen-free etching of non-volatile metals |
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| EP0433983B1 (en) * | 1989-12-20 | 1998-03-04 | Texas Instruments Incorporated | Copper etch process using halides |
| JPH04208526A (ja) * | 1990-11-30 | 1992-07-30 | Nisshin Hightech Kk | ドライエッチング方法および装置 |
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-
2014
- 2014-07-07 US US14/325,190 patent/US9257638B2/en active Active
- 2014-07-08 US US14/325,911 patent/US9130158B1/en active Active
-
2015
- 2015-01-23 KR KR1020150011133A patent/KR102377668B1/ko active Active
- 2015-03-19 TW TW104108722A patent/TWI651773B/zh active
- 2015-03-26 JP JP2015063653A patent/JP6789614B2/ja active Active
- 2015-03-26 TW TW104109675A patent/TWI650886B/zh active
- 2015-03-26 JP JP2015063656A patent/JP6557490B2/ja active Active
- 2015-03-27 KR KR1020150043503A patent/KR102318520B1/ko active Active
- 2015-03-27 SG SG10201502437TA patent/SG10201502437TA/en unknown
- 2015-03-27 SG SG10201502438RA patent/SG10201502438RA/en unknown
- 2015-03-27 CN CN201810360987.6A patent/CN108682737A/zh active Pending
- 2015-03-27 CN CN201510140906.8A patent/CN104953027B/zh active Active
- 2015-08-04 US US14/818,225 patent/US9391267B2/en active Active
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