DE19681602T1 - Verfahren zum Entfernen von Metall - Google Patents

Verfahren zum Entfernen von Metall

Info

Publication number
DE19681602T1
DE19681602T1 DE19681602T DE19681602T DE19681602T1 DE 19681602 T1 DE19681602 T1 DE 19681602T1 DE 19681602 T DE19681602 T DE 19681602T DE 19681602 T DE19681602 T DE 19681602T DE 19681602 T1 DE19681602 T1 DE 19681602T1
Authority
DE
Germany
Prior art keywords
removing metal
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19681602T
Other languages
English (en)
Inventor
Herbert H Sawin
Jane P Chang
Andrew Scott Lawing
Zhe Zhang
Han Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of DE19681602T1 publication Critical patent/DE19681602T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE19681602T 1995-10-19 1996-10-18 Verfahren zum Entfernen von Metall Withdrawn DE19681602T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US562295P 1995-10-19 1995-10-19
PCT/US1996/016731 WO1997015069A1 (en) 1995-10-19 1996-10-18 Metals removal process

Publications (1)

Publication Number Publication Date
DE19681602T1 true DE19681602T1 (de) 1998-11-26

Family

ID=21716831

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681602T Withdrawn DE19681602T1 (de) 1995-10-19 1996-10-18 Verfahren zum Entfernen von Metall

Country Status (5)

Country Link
US (1) US6083413A (de)
JP (1) JPH11513846A (de)
DE (1) DE19681602T1 (de)
GB (1) GB2322235B (de)
WO (1) WO1997015069A1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107166A (en) * 1997-08-29 2000-08-22 Fsi International, Inc. Vapor phase cleaning of alkali and alkaline earth metals
US6042654A (en) * 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines
US6284006B1 (en) * 1999-11-15 2001-09-04 Fsi International, Inc. Processing apparatus for microelectronic devices in which polymeric bellows are used to help accomplish substrate transport inside of the apparatus
US6514866B2 (en) * 2001-01-12 2003-02-04 North Carolina State University Chemically enhanced focused ion beam micro-machining of copper
US6730237B2 (en) * 2001-06-22 2004-05-04 International Business Machines Corporation Focused ion beam process for removal of copper
JP4037770B2 (ja) 2003-02-10 2008-01-23 株式会社東芝 半導体装置の製造方法
DE10332295B4 (de) * 2003-07-16 2005-09-01 Infineon Technologies Ag Verfahren zur Entfernung von Metallspuren aus festem Silizium
US20060196525A1 (en) * 2005-03-03 2006-09-07 Vrtis Raymond N Method for removing a residue from a chamber
KR20080014799A (ko) * 2005-04-28 2008-02-14 가부시키가이샤 피즈케믹스 에칭방법, 저유전율 유전체막의 제조방법, 다공성 부재의제조방법 및 에칭장치 및 박막 제작장치
US7501349B2 (en) * 2006-03-31 2009-03-10 Tokyo Electron Limited Sequential oxide removal using fluorine and hydrogen
WO2009146744A1 (de) * 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
WO2012177900A1 (en) 2011-06-22 2012-12-27 Research Triangle Institute, International Bipolar microelectronic device
US8853070B2 (en) 2012-04-13 2014-10-07 Oti Lumionics Inc. Functionalization of a substrate
US9698386B2 (en) 2012-04-13 2017-07-04 Oti Lumionics Inc. Functionalization of a substrate
US9257638B2 (en) * 2014-03-27 2016-02-09 Lam Research Corporation Method to etch non-volatile metal materials
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9806252B2 (en) * 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
JP6546872B2 (ja) * 2016-04-07 2019-07-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
JP7053991B2 (ja) * 2017-03-28 2022-04-13 セントラル硝子株式会社 ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
EP3776636A4 (de) 2018-03-30 2021-12-22 Lam Research Corporation Atomlagenätzen und glätten von refraktären metallen und anderen materialien mit hoher oberflächenbindungsenergie
WO2020230522A1 (ja) * 2019-05-15 2020-11-19 昭和電工株式会社 金属除去方法、ドライエッチング方法、及び半導体素子の製造方法
WO2021011101A1 (en) * 2019-07-18 2021-01-21 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of metals
CN116177550B (zh) * 2023-03-09 2024-02-27 浙江大学 一种硅纳米材料的表面钝化方法及用途

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479680A (en) * 1967-05-08 1969-11-25 Stewart Warner Corp Caster seal
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
JPS61174639A (ja) * 1985-01-28 1986-08-06 Semiconductor Energy Lab Co Ltd 光エツチング方法
JP2757546B2 (ja) * 1990-08-27 1998-05-25 日本電気株式会社 Ｆｅを含む物質のエッチング方法およびエッチング装置
US5318668A (en) * 1991-10-24 1994-06-07 Matsushita Electric Industrial Co., Ltd. Dry etching method
JPH07109825B2 (ja) * 1992-01-13 1995-11-22 富士通株式会社 半導体基板表面もしくは薄膜表面のドライ洗浄法
US5380370A (en) * 1993-04-30 1995-01-10 Tokyo Electron Limited Method of cleaning reaction tube
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
US5814156A (en) * 1993-09-08 1998-09-29 Uvtech Systems Inc. Photoreactive surface cleaning
US5431774A (en) * 1993-11-30 1995-07-11 Texas Instruments Incorporated Copper etching
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films

Also Published As

Publication number Publication date
GB2322235A (en) 1998-08-19
US6083413A (en) 2000-07-04
JPH11513846A (ja) 1999-11-24
WO1997015069A1 (en) 1997-04-24
GB2322235B (en) 2000-09-27
GB9807268D0 (en) 1998-06-03

Similar Documents

Publication Publication Date Title
DE19681602T1 (de) Verfahren zum Entfernen von Metall
DE69629742D1 (de) Verfahren zum Giessen von Metall
DE69311252D1 (de) Verfahren zum Biegen von metallischen Rohren
DE69617086D1 (de) Verfahren zum Ausbessern metallischer Einkristallgegenstände
DE19880534T1 (de) Verfahren zum Reinigen von Edelmetall
DE69516741D1 (de) Verfahren zum Mikroätzen von Kupfer- oder Kupferlegierungsoberflächen
DE69501010D1 (de) Verfahren zum Beschichten metallischer Oberflächen
DE59502479D1 (de) Verfahren zum Umformen von Metallblech
DE69612336D1 (de) Verfahren zum Mikroätzen von Kupfer und Kupferlegierungen
DE69406357D1 (de) Verfahren zum Nitrocarbrineren von Stahl
DE69522809D1 (de) Verfahren zum Verblasen von Kupferstein
DE69820814D1 (de) Verfahren zum Verbinden von metallischen Elementen
DE69705917D1 (de) Verfahren zum Formen halbfester Metalle
DE69508293D1 (de) Verfahren zum Polieren von Metallbändern
DE69430541D1 (de) Verfahren zum raffinieren von metall
DE69624783D1 (de) Verfahren zum vakuumfeinen von stahlschmelze
DE69522828D1 (de) Verfahren zum entmetallieren von raffinerieeizätzen
DE59601109D1 (de) Verfahren zum behandeln von hausmüll
DE69327486D1 (de) Verfahren zum Extrahieren von Metallen
DE69322994D1 (de) Verfahren zum Löten
DE69508508D1 (de) Verfahren zur Aktivierung von Metallhydriden
DE69608652D1 (de) Verfahren zum Aufkohlen von Metallen
ATA62794A (de) Verfahren zum aufbereiten von feinerz
DE69712417D1 (de) Verfahren zum stranggiessen von metallblech
DE59601124D1 (de) Verfahren zum Wellenlöten von Baugruppen

Legal Events

Date Code Title Description
8141 Disposal/no request for examination