SG10201502437TA - Method to etch non-volatile metal materials - Google Patents
Method to etch non-volatile metal materialsInfo
- Publication number
- SG10201502437TA SG10201502437TA SG10201502437TA SG10201502437TA SG10201502437TA SG 10201502437T A SG10201502437T A SG 10201502437TA SG 10201502437T A SG10201502437T A SG 10201502437TA SG 10201502437T A SG10201502437T A SG 10201502437TA SG 10201502437T A SG10201502437T A SG 10201502437TA
- Authority
- SG
- Singapore
- Prior art keywords
- metal materials
- volatile metal
- etch non
- etch
- volatile
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461971032P | 2014-03-27 | 2014-03-27 | |
US14/325,911 US9130158B1 (en) | 2014-03-27 | 2014-07-08 | Method to etch non-volatile metal materials |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201502437TA true SG10201502437TA (en) | 2015-10-29 |
Family
ID=54012662
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201502438RA SG10201502438RA (en) | 2014-03-27 | 2015-03-27 | Method to etch non-volatile metal materials |
SG10201502437TA SG10201502437TA (en) | 2014-03-27 | 2015-03-27 | Method to etch non-volatile metal materials |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201502438RA SG10201502438RA (en) | 2014-03-27 | 2015-03-27 | Method to etch non-volatile metal materials |
Country Status (6)
Country | Link |
---|---|
US (3) | US9257638B2 (en) |
JP (2) | JP6789614B2 (en) |
KR (2) | KR102377668B1 (en) |
CN (2) | CN108682737A (en) |
SG (2) | SG10201502438RA (en) |
TW (2) | TWI651773B (en) |
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US9449843B1 (en) * | 2015-06-09 | 2016-09-20 | Applied Materials, Inc. | Selectively etching metals and metal nitrides conformally |
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US10157742B2 (en) * | 2015-12-31 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for mandrel and spacer patterning |
US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
US10229837B2 (en) * | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
US9953843B2 (en) * | 2016-02-05 | 2018-04-24 | Lam Research Corporation | Chamber for patterning non-volatile metals |
US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
US10256108B2 (en) * | 2016-03-01 | 2019-04-09 | Lam Research Corporation | Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments |
US10230042B2 (en) | 2016-03-03 | 2019-03-12 | Toshiba Memory Corporation | Magnetoresistive element and method of manufacturing the same |
US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
US9680089B1 (en) | 2016-05-13 | 2017-06-13 | Micron Technology, Inc. | Magnetic tunnel junctions |
US9799519B1 (en) * | 2016-06-24 | 2017-10-24 | International Business Machines Corporation | Selective sputtering with light mass ions to sharpen sidewall of subtractively patterned conductive metal layer |
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US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
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-
2014
- 2014-07-07 US US14/325,190 patent/US9257638B2/en active Active
- 2014-07-08 US US14/325,911 patent/US9130158B1/en active Active
-
2015
- 2015-01-23 KR KR1020150011133A patent/KR102377668B1/en active IP Right Grant
- 2015-03-19 TW TW104108722A patent/TWI651773B/en active
- 2015-03-26 TW TW104109675A patent/TWI650886B/en active
- 2015-03-26 JP JP2015063653A patent/JP6789614B2/en active Active
- 2015-03-26 JP JP2015063656A patent/JP6557490B2/en active Active
- 2015-03-27 SG SG10201502438RA patent/SG10201502438RA/en unknown
- 2015-03-27 SG SG10201502437TA patent/SG10201502437TA/en unknown
- 2015-03-27 CN CN201810360987.6A patent/CN108682737A/en active Pending
- 2015-03-27 KR KR1020150043503A patent/KR102318520B1/en active IP Right Grant
- 2015-03-27 CN CN201510140906.8A patent/CN104953027B/en active Active
- 2015-08-04 US US14/818,225 patent/US9391267B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI650886B (en) | 2019-02-11 |
TWI651773B (en) | 2019-02-21 |
US20150340603A1 (en) | 2015-11-26 |
KR102377668B1 (en) | 2022-03-22 |
KR20150112896A (en) | 2015-10-07 |
SG10201502438RA (en) | 2015-10-29 |
CN104953027B (en) | 2018-05-22 |
US20150280114A1 (en) | 2015-10-01 |
JP6789614B2 (en) | 2020-11-25 |
JP2015192150A (en) | 2015-11-02 |
KR102318520B1 (en) | 2021-10-28 |
KR20150112757A (en) | 2015-10-07 |
US9391267B2 (en) | 2016-07-12 |
US9130158B1 (en) | 2015-09-08 |
CN104953027A (en) | 2015-09-30 |
US20150280113A1 (en) | 2015-10-01 |
JP2015216360A (en) | 2015-12-03 |
TW201608748A (en) | 2016-03-01 |
JP6557490B2 (en) | 2019-08-07 |
TW201603135A (en) | 2016-01-16 |
CN108682737A (en) | 2018-10-19 |
US9257638B2 (en) | 2016-02-09 |
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