JP2015188062A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2015188062A
JP2015188062A JP2015016817A JP2015016817A JP2015188062A JP 2015188062 A JP2015188062 A JP 2015188062A JP 2015016817 A JP2015016817 A JP 2015016817A JP 2015016817 A JP2015016817 A JP 2015016817A JP 2015188062 A JP2015188062 A JP 2015188062A
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Japan
Prior art keywords
film
oxide semiconductor
insulating film
transistor
region
Prior art date
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JP2015016817A
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Japanese (ja)
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JP2015188062A5 (enExample
Inventor
純一 肥塚
Junichi Hizuka
純一 肥塚
正美 神長
Masami Kaminaga
正美 神長
行徳 島
Yukinori Shima
行徳 島
黒崎　大輔
Daisuke Kurosaki
大輔 黒崎
中田　昌孝
Masataka Nakata
昌孝 中田
山崎　舜平
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2015016817A priority Critical patent/JP2015188062A/ja
Publication of JP2015188062A publication Critical patent/JP2015188062A/ja
Publication of JP2015188062A5 publication Critical patent/JP2015188062A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Led Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
JP2015016817A 2014-02-07 2015-01-30 半導体装置 Withdrawn JP2015188062A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015016817A JP2015188062A (ja) 2014-02-07 2015-01-30 半導体装置

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2014022864 2014-02-07
JP2014022864 2014-02-07
JP2014022865 2014-02-07
JP2014022865 2014-02-07
JP2014051138 2014-03-14
JP2014051134 2014-03-14
JP2014051138 2014-03-14
JP2014051134 2014-03-14
JP2015016817A JP2015188062A (ja) 2014-02-07 2015-01-30 半導体装置

Related Child Applications (2)

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JP2018171136A Division JP6445214B1 (ja) 2014-02-07 2018-09-13 半導体装置
JP2019073951A Division JP2019149561A (ja) 2014-02-07 2019-04-09 半導体装置

Publications (2)

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JP2015188062A true JP2015188062A (ja) 2015-10-29
JP2015188062A5 JP2015188062A5 (enExample) 2018-03-08

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JP2015016817A Withdrawn JP2015188062A (ja) 2014-02-07 2015-01-30 半導体装置
JP2018171136A Active JP6445214B1 (ja) 2014-02-07 2018-09-13 半導体装置
JP2018222173A Withdrawn JP2019068081A (ja) 2014-02-07 2018-11-28 半導体装置
JP2019073951A Withdrawn JP2019149561A (ja) 2014-02-07 2019-04-09 半導体装置
JP2021006259A Active JP7184496B2 (ja) 2014-02-07 2021-01-19 半導体装置
JP2022186966A Active JP7494274B2 (ja) 2014-02-07 2022-11-23 半導体装置
JP2024083347A Active JP7779951B2 (ja) 2014-02-07 2024-05-22 半導体装置

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JP2018222173A Withdrawn JP2019068081A (ja) 2014-02-07 2018-11-28 半導体装置
JP2019073951A Withdrawn JP2019149561A (ja) 2014-02-07 2019-04-09 半導体装置
JP2021006259A Active JP7184496B2 (ja) 2014-02-07 2021-01-19 半導体装置
JP2022186966A Active JP7494274B2 (ja) 2014-02-07 2022-11-23 半導体装置
JP2024083347A Active JP7779951B2 (ja) 2014-02-07 2024-05-22 半導体装置

Country Status (7)

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US (7) US9530894B2 (enExample)
JP (7) JP2015188062A (enExample)
KR (6) KR102443720B1 (enExample)
CN (2) CN105960712B (enExample)
DE (1) DE112015000676T5 (enExample)
TW (7) TWI686641B (enExample)
WO (1) WO2015118472A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018006727A (ja) * 2015-12-15 2018-01-11 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP2018032839A (ja) * 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
JP2019028206A (ja) * 2017-07-28 2019-02-21 セイコーエプソン株式会社 電気光学装置および電子機器
WO2019053573A1 (ja) * 2017-09-15 2019-03-21 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP2019216281A (ja) * 2015-11-25 2019-12-19 株式会社アルバック 薄膜トランジスタ、酸化物半導体膜及びスパッタリングターゲット
KR20210040383A (ko) * 2018-08-09 2021-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20210130280A (ko) * 2020-04-20 2021-11-01 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
JP2023099557A (ja) * 2016-04-08 2023-07-13 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1793266B1 (en) 2005-12-05 2017-03-08 Semiconductor Energy Laboratory Co., Ltd. Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102220450B1 (ko) * 2013-12-02 2021-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
CN105993077B (zh) * 2014-02-14 2019-12-06 夏普株式会社 有源矩阵基板
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
CN106796772A (zh) * 2014-05-30 2017-05-31 可隆奥托株式会社 圆形显示设备及其制造方法
US10297653B2 (en) * 2014-07-23 2019-05-21 Sony Corporation Display device, method of manufacturing display device, and electronic apparatus
JP5790893B1 (ja) * 2015-02-13 2015-10-07 日新電機株式会社 膜形成方法および薄膜トランジスタの作製方法
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10002970B2 (en) * 2015-04-30 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, or display device including the same
KR20180010205A (ko) 2015-05-22 2018-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
US11024725B2 (en) * 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
JP2017041596A (ja) * 2015-08-21 2017-02-23 株式会社Ｊｏｌｅｄ 薄膜トランジスタ、半導体装置および電子機器
TWI650817B (zh) * 2015-08-28 2019-02-11 聯華電子股份有限公司 半導體元件及其製作方法
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10297331B2 (en) 2015-10-30 2019-05-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10516060B2 (en) * 2016-03-11 2019-12-24 Semiconductor Energy Laboratory Co., Ltd. Composite and transistor
KR20180123028A (ko) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
CN111627924B (zh) * 2016-06-14 2023-05-16 群创光电股份有限公司 显示装置及显示装置的制造方法
CN107507834B (zh) * 2016-06-14 2020-06-12 群创光电股份有限公司 显示装置及显示装置的制造方法
US10217678B2 (en) * 2016-06-14 2019-02-26 Innolux Corporation Display device and method of manufacturing the display device
KR102675912B1 (ko) * 2016-06-30 2024-06-17 엘지디스플레이 주식회사 백플레인 기판과 이의 제조 방법 및 이를 적용한 유기 발광 표시 장치
CN106098702B (zh) * 2016-06-30 2019-05-03 上海天马微电子有限公司 显示面板及显示装置
TWI840104B (zh) * 2016-08-29 2024-04-21 日商半導體能源研究所股份有限公司 顯示裝置及控制程式
KR102384624B1 (ko) * 2016-10-21 2022-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10147681B2 (en) * 2016-12-09 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20180066848A (ko) 2016-12-09 2018-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
CN107046002B (zh) * 2017-03-24 2019-11-01 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板、显示装置
CN106847834B (zh) 2017-03-30 2019-05-10 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板
CN107104151A (zh) * 2017-05-10 2017-08-29 陕西师范大学 一种双栅电极金属氧化物薄膜晶体管及其制备方法
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN107293553B (zh) * 2017-06-19 2020-11-24 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板和显示装置
WO2019043511A1 (ja) * 2017-09-01 2019-03-07 株式会社半導体エネルギー研究所 半導体装置、及び表示装置
JP2019078788A (ja) * 2017-10-20 2019-05-23 シャープ株式会社 有機ｅｌ表示装置およびアクティブマトリクス基板
US10490756B2 (en) * 2017-11-06 2019-11-26 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for fabricating flexible OLED panel and flexible OLED panel
KR20200101964A (ko) * 2018-01-05 2020-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US11495691B2 (en) * 2018-06-08 2022-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN110649003A (zh) * 2018-06-26 2020-01-03 鸿富锦精密工业（深圳）有限公司 半导体基板、阵列基板、逆变器电路及开关电路
CN110190063B (zh) * 2018-07-02 2021-10-12 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
US11957014B2 (en) * 2018-07-30 2024-04-09 Sharp Kabushiki Kaisha Display device with reduced occurrences of electrostatic discharge
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
CN109728003B (zh) * 2019-01-03 2020-12-01 合肥鑫晟光电科技有限公司 显示基板、显示装置和显示基板的制造方法
JP7190740B2 (ja) 2019-02-22 2022-12-16 三国電子有限会社 エレクトロルミネセンス素子を有する表示装置
US11342364B2 (en) * 2019-07-11 2022-05-24 Tianma Japan. Ltd. Thin-film transistor substrate
KR102871919B1 (ko) * 2019-12-16 2025-10-15 엘지디스플레이 주식회사 트랜지스터 어레이 기판 및 이를 포함하는 전자장치
JP7315452B2 (ja) * 2019-12-20 2023-07-26 株式会社ジャパンディスプレイ 光センサ装置
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
US11916121B2 (en) * 2020-06-29 2024-02-27 Taiwan Semiconductor Manufacturing Company Limited Tri-gate orthogonal channel transistor and methods of forming the same
JP7610936B2 (ja) * 2020-08-07 2025-01-09 株式会社ジャパンディスプレイ 表示装置
KR102835255B1 (ko) * 2020-10-12 2025-07-16 엘지디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 포함하는 표시장치
CN112542516B (zh) * 2020-11-03 2024-01-30 北海惠科光电技术有限公司 一种主动开关及其制作方法和显示面板
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
CN112864280A (zh) * 2021-01-29 2021-05-28 通威太阳能（安徽）有限公司 一种高可靠性的双面电池及其制备方法
CN112939156A (zh) * 2021-02-05 2021-06-11 西安交通大学 一种具有电极自我修复功能的电化学反应系统及方法
JP2023007092A (ja) * 2021-07-01 2023-01-18 シャープディスプレイテクノロジー株式会社 アクティブマトリクス基板およびその製造方法
KR20230038357A (ko) * 2021-09-10 2023-03-20 삼성전자주식회사 반도체 소자 및 그의 제조방법
CN113809163B (zh) * 2021-09-17 2023-11-24 武汉天马微电子有限公司 金属氧化物晶体管、显示面板及显示装置
KR20240126217A (ko) * 2023-02-13 2024-08-20 에스케이하이닉스 주식회사 산화물 반도체를 포함하는 반도체 장치 및 그 제조 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064107A (ja) * 2000-06-07 2002-02-28 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008085048A (ja) * 2006-09-27 2008-04-10 Canon Inc 半導体装置及び半導体装置の製造方法
JP2009278115A (ja) * 2008-05-15 2009-11-26 Samsung Electronics Co Ltd トランジスタとこれを含む半導体素子及びそれらの製造方法
JP2010034534A (ja) * 2008-06-24 2010-02-12 Fujifilm Corp 薄膜電界効果型トランジスタおよび表示装置
JP2013168659A (ja) * 2009-08-07 2013-08-29 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013251526A (ja) * 2012-06-04 2013-12-12 Samsung Display Co Ltd 薄膜トランジスター、これを備える薄膜トランジスター表示板およびその製造方法

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6453460A (en) 1987-08-24 1989-03-01 Sony Corp Mos transistor
US5140391A (en) 1987-08-24 1992-08-18 Sony Corporation Thin film MOS transistor having pair of gate electrodes opposing across semiconductor layer
JPH07294961A (ja) 1994-04-22 1995-11-10 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置の駆動回路および設計方法
JP3883706B2 (ja) 1998-07-31 2007-02-21 シャープ株式会社 エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法
JP2001007342A (ja) 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI224806B (en) 2000-05-12 2004-12-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP5046439B2 (ja) 2000-05-12 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW501282B (en) 2000-06-07 2002-09-01 Semiconductor Energy Lab Method of manufacturing semiconductor device
US7105048B2 (en) 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP4021194B2 (ja) 2001-12-28 2007-12-12 シャープ株式会社 薄膜トランジスタ装置の製造方法
JP5025095B2 (ja) * 2004-05-07 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7521368B2 (en) 2004-05-07 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5138163B2 (ja) 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
JP5015471B2 (ja) 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
JP2007220818A (ja) 2006-02-15 2007-08-30 Kochi Prefecture Sangyo Shinko Center 薄膜トランジスタ及びその製法
JP5110803B2 (ja) 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
EP2025004A1 (en) 2006-06-02 2009-02-18 Kochi Industrial Promotion Center Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof
US7827800B2 (en) * 2006-10-19 2010-11-09 Pratt & Whitney Canada Corp. Combustor heat shield
JP5704790B2 (ja) 2008-05-07 2015-04-22 キヤノン株式会社 薄膜トランジスタ、および、表示装置
JP2010114160A (ja) * 2008-11-04 2010-05-20 Sharp Corp 半導体素子およびその製造方法並びに表示装置
EP2515337B1 (en) 2008-12-24 2016-02-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
TWI549198B (zh) 2008-12-26 2016-09-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5728171B2 (ja) 2009-06-29 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
KR102181301B1 (ko) * 2009-07-18 2020-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR20120051727A (ko) 2009-07-31 2012-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
CN102473734B (zh) 2009-07-31 2015-08-12 株式会社半导体能源研究所 半导体装置及其制造方法
JP5642447B2 (ja) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
WO2011027676A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102317763B1 (ko) 2009-11-06 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2011077966A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101773641B1 (ko) * 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011099368A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101872927B1 (ko) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8519387B2 (en) * 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
JP2012033836A (ja) 2010-08-03 2012-02-16 Canon Inc トップゲート型薄膜トランジスタ及びこれを備えた表示装置
WO2012035984A1 (en) 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8530273B2 (en) 2010-09-29 2013-09-10 Guardian Industries Corp. Method of making oxide thin film transistor array
TWI535014B (zh) * 2010-11-11 2016-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8823092B2 (en) * 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102130009B (zh) * 2010-12-01 2012-12-05 北京大学深圳研究生院 一种晶体管的制造方法
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012160679A (ja) 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器
KR20190039345A (ko) 2011-06-17 2019-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그의 제조 방법
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI567985B (zh) 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2013105754A (ja) 2011-11-10 2013-05-30 Sharp Corp 半導体素子基板の製造方法および半導体素子基板並びに表示装置
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
TWI580047B (zh) * 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 半導體裝置
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
JP6148024B2 (ja) * 2012-02-09 2017-06-14 株式会社半導体エネルギー研究所 半導体装置
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
JP6168795B2 (ja) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6087672B2 (ja) * 2012-03-16 2017-03-01 株式会社半導体エネルギー研究所 半導体装置
JP6035195B2 (ja) * 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102161077B1 (ko) 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102099445B1 (ko) 2012-06-29 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2014042004A (ja) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
CN108054175A (zh) 2012-08-03 2018-05-18 株式会社半导体能源研究所 半导体装置
US9287411B2 (en) 2012-10-24 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2016001712A (ja) 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2016027597A (ja) 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
KR20220046701A (ko) 2013-12-27 2022-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI665778B (zh) 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
JP6523695B2 (ja) 2014-02-05 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
TWI658597B (zh) 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064107A (ja) * 2000-06-07 2002-02-28 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008085048A (ja) * 2006-09-27 2008-04-10 Canon Inc 半導体装置及び半導体装置の製造方法
JP2009278115A (ja) * 2008-05-15 2009-11-26 Samsung Electronics Co Ltd トランジスタとこれを含む半導体素子及びそれらの製造方法
JP2010034534A (ja) * 2008-06-24 2010-02-12 Fujifilm Corp 薄膜電界効果型トランジスタおよび表示装置
JP2013168659A (ja) * 2009-08-07 2013-08-29 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013251526A (ja) * 2012-06-04 2013-12-12 Samsung Display Co Ltd 薄膜トランジスター、これを備える薄膜トランジスター表示板およびその製造方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019216281A (ja) * 2015-11-25 2019-12-19 株式会社アルバック 薄膜トランジスタ、酸化物半導体膜及びスパッタリングターゲット
JP2018032839A (ja) * 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
US11764309B2 (en) 2015-12-15 2023-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP2018006727A (ja) * 2015-12-15 2018-01-11 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP2023099557A (ja) * 2016-04-08 2023-07-13 株式会社半導体エネルギー研究所 半導体装置
US10871681B2 (en) 2017-07-28 2020-12-22 Seiko Epson Corporation Electro-optical device and electronic apparatus
JP2019028206A (ja) * 2017-07-28 2019-02-21 セイコーエプソン株式会社 電気光学装置および電子機器
JPWO2019053573A1 (ja) * 2017-09-15 2020-10-29 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11088286B2 (en) 2017-09-15 2021-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7167038B2 (ja) 2017-09-15 2022-11-08 株式会社半導体エネルギー研究所 半導体装置
WO2019053573A1 (ja) * 2017-09-15 2019-03-21 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
KR20210040383A (ko) * 2018-08-09 2021-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2023073443A (ja) * 2018-08-09 2023-05-25 株式会社半導体エネルギー研究所 半導体装置
KR102871835B1 (ko) * 2018-08-09 2025-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20210130280A (ko) * 2020-04-20 2021-11-01 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR102735959B1 (ko) * 2020-04-20 2024-12-03 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

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