JP2015053479A - 剥離方法 - Google Patents

剥離方法 Download PDF

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Publication number
JP2015053479A
JP2015053479A JP2014158396A JP2014158396A JP2015053479A JP 2015053479 A JP2015053479 A JP 2015053479A JP 2014158396 A JP2014158396 A JP 2014158396A JP 2014158396 A JP2014158396 A JP 2014158396A JP 2015053479 A JP2015053479 A JP 2015053479A
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JP
Japan
Prior art keywords
layer
peeling
light
substrate
peeled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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JP2014158396A
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English (en)
Japanese (ja)
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JP2015053479A5 (enExample
Inventor
智哉 青山
Tomoya Aoyama
智哉 青山
章裕 千田
Akihiro Senda
章裕 千田
立 小松
Ritsu Komatsu
立 小松
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2014158396A priority Critical patent/JP2015053479A/ja
Publication of JP2015053479A publication Critical patent/JP2015053479A/ja
Publication of JP2015053479A5 publication Critical patent/JP2015053479A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP2014158396A 2013-08-06 2014-08-04 剥離方法 Withdrawn JP2015053479A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014158396A JP2015053479A (ja) 2013-08-06 2014-08-04 剥離方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013163029 2013-08-06
JP2013163029 2013-08-06
JP2014158396A JP2015053479A (ja) 2013-08-06 2014-08-04 剥離方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019054607A Division JP6692959B2 (ja) 2013-08-06 2019-03-22 剥離方法

Publications (2)

Publication Number Publication Date
JP2015053479A true JP2015053479A (ja) 2015-03-19
JP2015053479A5 JP2015053479A5 (enExample) 2017-08-31

Family

ID=52448990

Family Applications (3)

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JP2014158396A Withdrawn JP2015053479A (ja) 2013-08-06 2014-08-04 剥離方法
JP2019054607A Active JP6692959B2 (ja) 2013-08-06 2019-03-22 剥離方法
JP2020072829A Active JP6870139B2 (ja) 2013-08-06 2020-04-15 剥離方法

Family Applications After (2)

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JP2019054607A Active JP6692959B2 (ja) 2013-08-06 2019-03-22 剥離方法
JP2020072829A Active JP6870139B2 (ja) 2013-08-06 2020-04-15 剥離方法

Country Status (6)

Country Link
US (2) US9735398B2 (enExample)
JP (3) JP2015053479A (enExample)
KR (1) KR102224416B1 (enExample)
CN (2) CN109273622B (enExample)
TW (2) TWI685026B (enExample)
WO (1) WO2015019971A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160007214A (ko) * 2014-07-11 2016-01-20 한국기계연구원 금속모재 위에 증착된 금속막 분리장치
JP2018078292A (ja) * 2016-11-03 2018-05-17 株式会社半導体エネルギー研究所 半導体装置の作製方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5899220B2 (ja) * 2010-09-29 2016-04-06 ポスコ ロール状の母基板を利用したフレキシブル電子素子の製造方法、フレキシブル電子素子及びフレキシブル基板
CN109273622B (zh) * 2013-08-06 2021-03-12 株式会社半导体能源研究所 剥离方法
TWI618131B (zh) 2013-08-30 2018-03-11 半導體能源研究所股份有限公司 剝離起點形成裝置及形成方法、疊層體製造裝置
TWI663722B (zh) 2013-09-06 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 發光裝置以及發光裝置的製造方法
TWI524998B (zh) * 2013-09-25 2016-03-11 友達光電股份有限公司 基板之黏結及分離的方法
US9937698B2 (en) 2013-11-06 2018-04-10 Semiconductor Energy Laboratory Co., Ltd. Peeling method and light-emitting device
US9229481B2 (en) 2013-12-20 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015125046A1 (en) 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and peeling method
JP6289286B2 (ja) 2014-06-25 2018-03-07 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
KR102368997B1 (ko) 2014-06-27 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 모듈, 전자 기기, 발광 장치의 제작 방법
JP6634283B2 (ja) * 2014-12-29 2020-01-22 株式会社半導体エネルギー研究所 機能パネル
KR102632066B1 (ko) 2015-07-30 2024-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치의 제작 방법, 발광 장치, 모듈, 및 전자 기기
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
JP6863803B2 (ja) 2016-04-07 2021-04-21 株式会社半導体エネルギー研究所 表示装置
US10279576B2 (en) 2016-04-26 2019-05-07 Semiconductor Energy Laboratory Co., Ltd. Peeling method and manufacturing method of flexible device
KR102378976B1 (ko) * 2016-05-18 2022-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기
CN106019552B (zh) * 2016-06-23 2019-01-11 中国科学院西安光学精密机械研究所 消除被测物体表面盲点的显微镜辅助装置
KR102425705B1 (ko) * 2016-08-31 2022-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US10528198B2 (en) 2016-09-16 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Display panel, display device, input/output device, data processing device, and method for manufacturing the display panel
US10103478B1 (en) * 2017-06-23 2018-10-16 Amazon Technologies, Inc. Water resistant connectors with conductive elements
CN110998386B (zh) * 2017-08-16 2022-10-28 Ａｇｃ株式会社 聚合物光波导
KR102179165B1 (ko) * 2017-11-28 2020-11-16 삼성전자주식회사 캐리어 기판 및 상기 캐리어 기판을 이용한 반도체 패키지의 제조방법
JP7242362B2 (ja) * 2019-03-18 2023-03-20 キオクシア株式会社 半導体装置の製造方法
TWI710820B (zh) 2019-03-28 2020-11-21 友達光電股份有限公司 顯示裝置
CN110783253B (zh) * 2019-10-31 2022-05-24 京东方科技集团股份有限公司 一种显示基板的制作方法、显示基板和显示装置
US10849235B1 (en) * 2020-05-20 2020-11-24 Tactotek Oy Method of manufacture of a structure and structure
CN111873605B (zh) * 2020-09-04 2022-04-26 广东华中科技大学工业技术研究院 一种机械爪辅助撕膜装置及撕膜机构
KR102491000B1 (ko) * 2020-09-24 2023-01-26 세메스 주식회사 접착제층 제거 유닛 및 이를 이용하는 접착제층 제거 방법
CN114051453B (zh) * 2021-04-28 2023-08-04 奉贤淏 汽车着色膜蒸汽剥离装置
KR102878738B1 (ko) 2021-07-30 2025-10-30 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN114284460B (zh) * 2021-12-14 2024-04-16 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327836A (ja) * 2003-04-25 2004-11-18 Seiko Epson Corp 被転写体の転写方法、被転写体の製造方法、回路基板の製造方法、電気光学装置、及び電子機器
US20060199382A1 (en) * 2005-03-01 2006-09-07 Semiconductor Energy Laboratory Co., Ltd. Manufacturing Method of Semiconductor Device
JP2006279031A (ja) * 2005-03-01 2006-10-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006344618A (ja) * 2005-06-07 2006-12-21 Fujifilm Holdings Corp 機能性膜含有構造体、及び、機能性膜の製造方法
JP2007013127A (ja) * 2005-06-01 2007-01-18 Semiconductor Energy Lab Co Ltd 集積回路装置、集積回路装置の作製方法
JP2012028760A (ja) * 2010-06-24 2012-02-09 Semiconductor Energy Lab Co Ltd 半導体基板および半導体装置の作製方法

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP0848415A1 (en) 1995-08-31 1998-06-17 Nitto Denko Corporation Method and apparatus for peeling protective adhesive tape from semiconductor wafer
CN1132223C (zh) 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
US6072239A (en) 1995-11-08 2000-06-06 Fujitsu Limited Device having resin package with projections
JP4619462B2 (ja) 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
CN1495523A (zh) 1996-08-27 2004-05-12 ������������ʽ���� 转移方法和有源矩阵基板的制造方法
US6127199A (en) 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
KR100304161B1 (ko) 1996-12-18 2001-11-30 미다라이 후지오 반도체부재의제조방법
US6326279B1 (en) 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
US6452091B1 (en) 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
US6391220B1 (en) 1999-08-18 2002-05-21 Fujitsu Limited, Inc. Methods for fabricating flexible circuit structures
AU776667B2 (en) 1999-11-29 2004-09-16 Canon Kabushiki Kaisha Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device
US7060153B2 (en) 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
SG101479A1 (en) 2000-09-14 2004-01-30 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4803884B2 (ja) 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
JP4302335B2 (ja) 2001-05-22 2009-07-22 株式会社半導体エネルギー研究所 太陽電池の作製方法
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
WO2003010825A1 (fr) 2001-07-24 2003-02-06 Seiko Epson Corporation Procede de transfert, procede de fabrication d'un element en couche mince, procede de fabrication d'un circuit integre, substrat de circuit et son procede de fabrication, dispositif electro-optique et son procede de fabrication et carte a circuit integre et materiel electronique
JP5057619B2 (ja) 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW554398B (en) 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
TW594947B (en) * 2001-10-30 2004-06-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI264121B (en) 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
US6953735B2 (en) 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
EP1363319B1 (en) 2002-05-17 2009-01-07 Semiconductor Energy Laboratory Co., Ltd. Method of transferring an object and method of manufacturing a semiconductor device
JP2004047823A (ja) 2002-07-12 2004-02-12 Tokyo Seimitsu Co Ltd ダイシングテープ貼付装置およびバックグラインド・ダイシングテープ貼付システム
TWI272641B (en) 2002-07-16 2007-02-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP2004140267A (ja) 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4471563B2 (ja) 2002-10-25 2010-06-02 株式会社ルネサステクノロジ 半導体装置の製造方法
WO2004040648A1 (ja) 2002-10-30 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 半導体装置および半導体装置の作製方法
US7056810B2 (en) 2002-12-18 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
CN1739129A (zh) * 2003-01-15 2006-02-22 株式会社半导体能源研究所 剥离方法及采用该剥离方法的显示装置的制造方法
KR101033797B1 (ko) 2003-01-15 2011-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 그 박리 방법을 사용한 표시 장치의 제작 방법
US7436050B2 (en) 2003-01-22 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a flexible printed circuit
JP4151421B2 (ja) 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
TWI356658B (en) 2003-01-23 2012-01-11 Toray Industries Members for circuit board, method and device for m
JP2004311955A (ja) 2003-03-25 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法
US7241666B2 (en) 2003-10-28 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7608520B2 (en) 2003-11-06 2009-10-27 Panasonic Corporation Method for bonding substrate, bonded substrate, and direct bonded substrate
KR101095293B1 (ko) 2003-11-28 2011-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 제조 방법
KR101207442B1 (ko) 2003-12-15 2012-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로장치의 제조방법, 비접촉형 박막 집적회로장치 및 그 제조 방법, 비접촉형 박막 집적회로 장치를 가지는 아이디 태그 및 동전
US7271076B2 (en) 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
US7015075B2 (en) 2004-02-09 2006-03-21 Freescale Semiconuctor, Inc. Die encapsulation using a porous carrier
CN100521117C (zh) 2004-02-25 2009-07-29 株式会社半导体能源研究所 半导体器件及其制造方法
JP2006049800A (ja) 2004-03-10 2006-02-16 Seiko Epson Corp 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器
US7282380B2 (en) * 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101187403B1 (ko) 2004-06-02 2012-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
WO2006003816A1 (ja) 2004-07-02 2006-01-12 Sharp Kabushiki Kaisha フィルム剥離方法と装置
US7591863B2 (en) 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
CN100530575C (zh) 2004-07-30 2009-08-19 株式会社半导体能源研究所 层压系统、ic薄片、ic薄片卷、以及ic芯片的制造方法
WO2006011664A1 (en) 2004-07-30 2006-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101223197B1 (ko) 2004-09-24 2013-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제조방법
EP1814369A4 (en) 2004-10-01 2008-10-29 Toray Industries LONG FILM PCB AND PRODUCTION PROCESS AND PRODUCTION DEVICE THEREFOR
US7482248B2 (en) 2004-12-03 2009-01-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP4649198B2 (ja) 2004-12-20 2011-03-09 新光電気工業株式会社 配線基板の製造方法
CN101111938B (zh) 2005-01-28 2010-08-11 株式会社半导体能源研究所 半导体器件和制造它的方法
US7566633B2 (en) 2005-02-25 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4795743B2 (ja) 2005-05-19 2011-10-19 リンテック株式会社 貼付装置
CN100585806C (zh) 2005-05-20 2010-01-27 株式会社半导体能源研究所 半导体装置的制造方法
US8030132B2 (en) 2005-05-31 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including peeling step
US7465674B2 (en) 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7485511B2 (en) * 2005-06-01 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit device and method for manufacturing integrated circuit device
JP4916680B2 (ja) 2005-06-30 2012-04-18 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法
EP1760776B1 (en) 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
US7767543B2 (en) 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
TWI424499B (zh) 2006-06-30 2014-01-21 Semiconductor Energy Lab 製造半導體裝置的方法
JP4402144B2 (ja) * 2006-09-29 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
TWI433306B (zh) * 2006-09-29 2014-04-01 Semiconductor Energy Lab 半導體裝置的製造方法
US7867907B2 (en) 2006-10-17 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4380709B2 (ja) * 2007-01-31 2009-12-09 セイコーエプソン株式会社 半導体装置の製造方法
CN101504930B (zh) 2008-02-06 2013-10-16 株式会社半导体能源研究所 Soi衬底的制造方法
JP2010050313A (ja) * 2008-08-22 2010-03-04 Seiko Epson Corp 薄膜転写方法及び薄膜電子デバイスの製造方法
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
JP2010286774A (ja) * 2009-06-15 2010-12-24 Seiko Epson Corp 液晶パネル、その製造方法、マイクロレンズ基板、液晶パネル用対向基板
JP2011165788A (ja) * 2010-02-08 2011-08-25 Seiko Epson Corp 半導体素子基板の製造方法
JP5714859B2 (ja) * 2010-09-30 2015-05-07 芝浦メカトロニクス株式会社 基板積層体、貼り合わせ装置、剥離装置、および基板の製造方法
JP5621607B2 (ja) * 2011-01-17 2014-11-12 株式会社リコー 電気泳動表示素子の製造方法
KR101953724B1 (ko) * 2011-08-26 2019-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 모듈, 발광 장치, 발광 모듈의 제작 방법, 발광 장치의 제작 방법
CN102496667B (zh) * 2011-12-20 2014-05-07 中国科学院半导体研究所 GaN基薄膜芯片的制造方法
JP6277357B2 (ja) * 2012-08-03 2018-02-14 株式会社Ｊｏｌｅｄ 接合体の製造方法
CN109273622B (zh) * 2013-08-06 2021-03-12 株式会社半导体能源研究所 剥离方法
TWI663722B (zh) 2013-09-06 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 發光裝置以及發光裝置的製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327836A (ja) * 2003-04-25 2004-11-18 Seiko Epson Corp 被転写体の転写方法、被転写体の製造方法、回路基板の製造方法、電気光学装置、及び電子機器
US20060199382A1 (en) * 2005-03-01 2006-09-07 Semiconductor Energy Laboratory Co., Ltd. Manufacturing Method of Semiconductor Device
JP2006279031A (ja) * 2005-03-01 2006-10-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2007013127A (ja) * 2005-06-01 2007-01-18 Semiconductor Energy Lab Co Ltd 集積回路装置、集積回路装置の作製方法
JP2006344618A (ja) * 2005-06-07 2006-12-21 Fujifilm Holdings Corp 機能性膜含有構造体、及び、機能性膜の製造方法
US20080075927A1 (en) * 2005-06-07 2008-03-27 Fujiflim Corporation Functional Film Containing Structure And Method Of Manufacturing Functional Film
JP2012028760A (ja) * 2010-06-24 2012-02-09 Semiconductor Energy Lab Co Ltd 半導体基板および半導体装置の作製方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160007214A (ko) * 2014-07-11 2016-01-20 한국기계연구원 금속모재 위에 증착된 금속막 분리장치
KR101586996B1 (ko) 2014-07-11 2016-01-22 한국기계연구원 금속모재 위에 증착된 금속막 분리장치
JP2018078292A (ja) * 2016-11-03 2018-05-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US11177373B2 (en) 2016-11-03 2021-11-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP7030475B2 (ja) 2016-11-03 2022-03-07 株式会社半導体エネルギー研究所 半導体装置の作製方法

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