TWI685026B - 剝離方法 - Google Patents
剝離方法 Download PDFInfo
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- TWI685026B TWI685026B TW107130688A TW107130688A TWI685026B TW I685026 B TWI685026 B TW I685026B TW 107130688 A TW107130688 A TW 107130688A TW 107130688 A TW107130688 A TW 107130688A TW I685026 B TWI685026 B TW I685026B
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- H—ELECTRICITY
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
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- H—ELECTRICITY
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Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2624326A4 (en) * | 2010-09-29 | 2017-05-10 | Posco | Method for manufacturing a flexible electronic device using a roll-shaped motherboard, flexible electronic device, and flexible substrate |
| CN105474355B (zh) * | 2013-08-06 | 2018-11-13 | 株式会社半导体能源研究所 | 剥离方法 |
| TWI618131B (zh) | 2013-08-30 | 2018-03-11 | 半導體能源研究所股份有限公司 | 剝離起點形成裝置及形成方法、疊層體製造裝置 |
| TWI663722B (zh) | 2013-09-06 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 發光裝置以及發光裝置的製造方法 |
| TWI524998B (zh) * | 2013-09-25 | 2016-03-11 | 友達光電股份有限公司 | 基板之黏結及分離的方法 |
| US9937698B2 (en) | 2013-11-06 | 2018-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and light-emitting device |
| US9229481B2 (en) | 2013-12-20 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| DE112015000866T5 (de) | 2014-02-19 | 2016-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemittierende Vorrichtung und Ablöseverfahren |
| JP6289286B2 (ja) * | 2014-06-25 | 2018-03-07 | 株式会社ジャパンディスプレイ | 表示装置および表示装置の製造方法 |
| KR102368997B1 (ko) | 2014-06-27 | 2022-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 모듈, 전자 기기, 발광 장치의 제작 방법 |
| KR101586996B1 (ko) * | 2014-07-11 | 2016-01-22 | 한국기계연구원 | 금속모재 위에 증착된 금속막 분리장치 |
| JP6634283B2 (ja) * | 2014-12-29 | 2020-01-22 | 株式会社半導体エネルギー研究所 | 機能パネル |
| CN108738377B (zh) | 2015-07-30 | 2020-11-10 | 株式会社半导体能源研究所 | 发光装置的制造方法、发光装置、模块及电子设备 |
| US10259207B2 (en) | 2016-01-26 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming separation starting point and separation method |
| JP6863803B2 (ja) | 2016-04-07 | 2021-04-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US10279576B2 (en) | 2016-04-26 | 2019-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and manufacturing method of flexible device |
| KR102378976B1 (ko) * | 2016-05-18 | 2022-03-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법, 표시 장치, 모듈, 및 전자 기기 |
| CN106019552B (zh) * | 2016-06-23 | 2019-01-11 | 中国科学院西安光学精密机械研究所 | 消除被测物体表面盲点的显微镜辅助装置 |
| WO2018042284A1 (en) * | 2016-08-31 | 2018-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US10528198B2 (en) | 2016-09-16 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, display device, input/output device, data processing device, and method for manufacturing the display panel |
| US11177373B2 (en) | 2016-11-03 | 2021-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US10103478B1 (en) * | 2017-06-23 | 2018-10-16 | Amazon Technologies, Inc. | Water resistant connectors with conductive elements |
| CN110998386B (zh) * | 2017-08-16 | 2022-10-28 | Agc株式会社 | 聚合物光波导 |
| KR102179165B1 (ko) * | 2017-11-28 | 2020-11-16 | 삼성전자주식회사 | 캐리어 기판 및 상기 캐리어 기판을 이용한 반도체 패키지의 제조방법 |
| JP7242362B2 (ja) | 2019-03-18 | 2023-03-20 | キオクシア株式会社 | 半導体装置の製造方法 |
| TWI710820B (zh) | 2019-03-28 | 2020-11-21 | 友達光電股份有限公司 | 顯示裝置 |
| CN110783253B (zh) * | 2019-10-31 | 2022-05-24 | 京东方科技集团股份有限公司 | 一种显示基板的制作方法、显示基板和显示装置 |
| US10849235B1 (en) | 2020-05-20 | 2020-11-24 | Tactotek Oy | Method of manufacture of a structure and structure |
| CN111873605B (zh) * | 2020-09-04 | 2022-04-26 | 广东华中科技大学工业技术研究院 | 一种机械爪辅助撕膜装置及撕膜机构 |
| KR102491000B1 (ko) * | 2020-09-24 | 2023-01-26 | 세메스 주식회사 | 접착제층 제거 유닛 및 이를 이용하는 접착제층 제거 방법 |
| BR112023022328A2 (pt) * | 2021-04-28 | 2023-12-26 | Ae BONG Da | Dispositivo de remoção a vapor de película de tonalização de automóveis |
| KR102878738B1 (ko) | 2021-07-30 | 2025-10-30 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| CN114284460B (zh) * | 2021-12-14 | 2024-04-16 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200300281A (en) * | 2001-10-30 | 2003-05-16 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| CN101236919A (zh) * | 2007-01-31 | 2008-08-06 | 精工爱普生株式会社 | 半导体装置的制造方法 |
Family Cites Families (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3352340B2 (ja) | 1995-10-06 | 2002-12-03 | キヤノン株式会社 | 半導体基体とその製造方法 |
| JP3364081B2 (ja) | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR19990028523A (ko) | 1995-08-31 | 1999-04-15 | 야마모토 히데키 | 반도체웨이퍼의 보호점착테이프의 박리방법 및 그 장치 |
| US6072239A (en) | 1995-11-08 | 2000-06-06 | Fujitsu Limited | Device having resin package with projections |
| EP0858110B1 (en) | 1996-08-27 | 2006-12-13 | Seiko Epson Corporation | Separating method, method for transferring thin film device, and liquid crystal display device manufactured by using the transferring method |
| JP4619462B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| US6127199A (en) | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
| ATE261612T1 (de) | 1996-12-18 | 2004-03-15 | Canon Kk | Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht |
| US6326279B1 (en) | 1999-03-26 | 2001-12-04 | Canon Kabushiki Kaisha | Process for producing semiconductor article |
| US6452091B1 (en) | 1999-07-14 | 2002-09-17 | Canon Kabushiki Kaisha | Method of producing thin-film single-crystal device, solar cell module and method of producing the same |
| US6391220B1 (en) | 1999-08-18 | 2002-05-21 | Fujitsu Limited, Inc. | Methods for fabricating flexible circuit structures |
| US6592739B1 (en) | 1999-11-29 | 2003-07-15 | Canon Kabushiki Kaisha | Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device |
| US7060153B2 (en) | 2000-01-17 | 2006-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of manufacturing the same |
| SG148819A1 (en) | 2000-09-14 | 2009-01-29 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| JP4803884B2 (ja) | 2001-01-31 | 2011-10-26 | キヤノン株式会社 | 薄膜半導体装置の製造方法 |
| JP4302335B2 (ja) | 2001-05-22 | 2009-07-22 | 株式会社半導体エネルギー研究所 | 太陽電池の作製方法 |
| TW548860B (en) | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| US8415208B2 (en) | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| JP4027740B2 (ja) | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP2565924B1 (en) | 2001-07-24 | 2018-01-10 | Samsung Electronics Co., Ltd. | Transfer method |
| JP5057619B2 (ja) | 2001-08-01 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW554398B (en) | 2001-08-10 | 2003-09-21 | Semiconductor Energy Lab | Method of peeling off and method of manufacturing semiconductor device |
| US7351300B2 (en) | 2001-08-22 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and method of manufacturing semiconductor device |
| TWI264121B (en) | 2001-11-30 | 2006-10-11 | Semiconductor Energy Lab | A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device |
| US6953735B2 (en) | 2001-12-28 | 2005-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device by transferring a layer to a support with curvature |
| DE60325669D1 (de) | 2002-05-17 | 2009-02-26 | Semiconductor Energy Lab | Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements |
| JP2004047823A (ja) | 2002-07-12 | 2004-02-12 | Tokyo Seimitsu Co Ltd | ダイシングテープ貼付装置およびバックグラインド・ダイシングテープ貼付システム |
| TWI272641B (en) | 2002-07-16 | 2007-02-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| JP2004140267A (ja) | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4471563B2 (ja) | 2002-10-25 | 2010-06-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| KR101169371B1 (ko) | 2002-10-30 | 2012-07-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 |
| US7056810B2 (en) | 2002-12-18 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance |
| JP4373085B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法及び転写方法 |
| CN1739129A (zh) * | 2003-01-15 | 2006-02-22 | 株式会社半导体能源研究所 | 剥离方法及采用该剥离方法的显示装置的制造方法 |
| JP4637588B2 (ja) | 2003-01-15 | 2011-02-23 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US7436050B2 (en) | 2003-01-22 | 2008-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a flexible printed circuit |
| JP4151421B2 (ja) | 2003-01-23 | 2008-09-17 | セイコーエプソン株式会社 | デバイスの製造方法 |
| TWI356658B (en) | 2003-01-23 | 2012-01-11 | Toray Industries | Members for circuit board, method and device for m |
| JP2004311955A (ja) | 2003-03-25 | 2004-11-04 | Sony Corp | 超薄型電気光学表示装置の製造方法 |
| JP2004327836A (ja) * | 2003-04-25 | 2004-11-18 | Seiko Epson Corp | 被転写体の転写方法、被転写体の製造方法、回路基板の製造方法、電気光学装置、及び電子機器 |
| TWI372462B (en) | 2003-10-28 | 2012-09-11 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
| CN100405540C (zh) | 2003-11-06 | 2008-07-23 | 松下电器产业株式会社 | 基板贴合方法、该贴合基板及直接接合基板 |
| US7601236B2 (en) | 2003-11-28 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing display device |
| US7566640B2 (en) | 2003-12-15 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device |
| US7271076B2 (en) | 2003-12-19 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device |
| US7015075B2 (en) | 2004-02-09 | 2006-03-21 | Freescale Semiconuctor, Inc. | Die encapsulation using a porous carrier |
| WO2005081303A1 (en) | 2004-02-25 | 2005-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2006049800A (ja) | 2004-03-10 | 2006-02-16 | Seiko Epson Corp | 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器 |
| US7282380B2 (en) * | 2004-03-25 | 2007-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101187403B1 (ko) | 2004-06-02 | 2012-10-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| JP4054359B2 (ja) | 2004-07-02 | 2008-02-27 | シャープ株式会社 | フィルム剥離方法と装置 |
| US7591863B2 (en) | 2004-07-16 | 2009-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip |
| WO2006011665A1 (en) | 2004-07-30 | 2006-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Laminating system, ic sheet, scroll of ic sheet, and method for manufacturing ic chip |
| WO2006011664A1 (en) | 2004-07-30 | 2006-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2006033451A1 (en) | 2004-09-24 | 2006-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JPWO2006038496A1 (ja) | 2004-10-01 | 2008-05-15 | 東レ株式会社 | 長尺フィルム回路基板、その製造方法およびその製造装置 |
| US7482248B2 (en) | 2004-12-03 | 2009-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP4649198B2 (ja) | 2004-12-20 | 2011-03-09 | 新光電気工業株式会社 | 配線基板の製造方法 |
| US8749063B2 (en) | 2005-01-28 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US7566633B2 (en) | 2005-02-25 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9040420B2 (en) | 2005-03-01 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling layers from substrates by etching |
| JP5025145B2 (ja) * | 2005-03-01 | 2012-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4795743B2 (ja) | 2005-05-19 | 2011-10-19 | リンテック株式会社 | 貼付装置 |
| CN100585806C (zh) | 2005-05-20 | 2010-01-27 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| US7465674B2 (en) | 2005-05-31 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US8030132B2 (en) | 2005-05-31 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling step |
| US7485511B2 (en) | 2005-06-01 | 2009-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Integrated circuit device and method for manufacturing integrated circuit device |
| JP5210501B2 (ja) * | 2005-06-01 | 2013-06-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2006344618A (ja) * | 2005-06-07 | 2006-12-21 | Fujifilm Holdings Corp | 機能性膜含有構造体、及び、機能性膜の製造方法 |
| JP4916680B2 (ja) | 2005-06-30 | 2012-04-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法 |
| EP1760776B1 (en) | 2005-08-31 | 2019-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device with flexible substrate |
| US7767543B2 (en) | 2005-09-06 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a micro-electro-mechanical device with a folded substrate |
| TWI424499B (zh) | 2006-06-30 | 2014-01-21 | Semiconductor Energy Lab | 製造半導體裝置的方法 |
| TWI430435B (zh) | 2006-09-29 | 2014-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US8137417B2 (en) | 2006-09-29 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Peeling apparatus and manufacturing apparatus of semiconductor device |
| JP4402144B2 (ja) * | 2006-09-29 | 2010-01-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7867907B2 (en) | 2006-10-17 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5057900B2 (ja) * | 2007-09-04 | 2012-10-24 | 三菱電機株式会社 | 液晶パネルの製造方法 |
| CN101504930B (zh) | 2008-02-06 | 2013-10-16 | 株式会社半导体能源研究所 | Soi衬底的制造方法 |
| JP2009224436A (ja) * | 2008-03-14 | 2009-10-01 | Seiko Epson Corp | 薄膜電子デバイスの製造方法及び薄膜電子デバイスの製造装置 |
| JP2010050313A (ja) * | 2008-08-22 | 2010-03-04 | Seiko Epson Corp | 薄膜転写方法及び薄膜電子デバイスの製造方法 |
| JP5586920B2 (ja) * | 2008-11-20 | 2014-09-10 | 株式会社半導体エネルギー研究所 | フレキシブル半導体装置の作製方法 |
| JP2010286774A (ja) * | 2009-06-15 | 2010-12-24 | Seiko Epson Corp | 液晶パネル、その製造方法、マイクロレンズ基板、液晶パネル用対向基板 |
| JP2011165788A (ja) * | 2010-02-08 | 2011-08-25 | Seiko Epson Corp | 半導体素子基板の製造方法 |
| US8507322B2 (en) | 2010-06-24 | 2013-08-13 | Akihiro Chida | Semiconductor substrate and method for manufacturing semiconductor device |
| JP5714859B2 (ja) * | 2010-09-30 | 2015-05-07 | 芝浦メカトロニクス株式会社 | 基板積層体、貼り合わせ装置、剥離装置、および基板の製造方法 |
| JP5621607B2 (ja) * | 2011-01-17 | 2014-11-12 | 株式会社リコー | 電気泳動表示素子の製造方法 |
| KR101953724B1 (ko) * | 2011-08-26 | 2019-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 모듈, 발광 장치, 발광 모듈의 제작 방법, 발광 장치의 제작 방법 |
| CN102496667B (zh) * | 2011-12-20 | 2014-05-07 | 中国科学院半导体研究所 | GaN基薄膜芯片的制造方法 |
| JP6277357B2 (ja) * | 2012-08-03 | 2018-02-14 | 株式会社Joled | 接合体の製造方法 |
| CN105474355B (zh) * | 2013-08-06 | 2018-11-13 | 株式会社半导体能源研究所 | 剥离方法 |
| TWI663722B (zh) | 2013-09-06 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 發光裝置以及發光裝置的製造方法 |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200300281A (en) * | 2001-10-30 | 2003-05-16 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| CN101236919A (zh) * | 2007-01-31 | 2008-08-06 | 精工爱普生株式会社 | 半导体装置的制造方法 |
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| WO2015019971A1 (en) | 2015-02-12 |
| CN109273622B (zh) | 2021-03-12 |
| US20170358782A1 (en) | 2017-12-14 |
| TWI642094B (zh) | 2018-11-21 |
| US10164219B2 (en) | 2018-12-25 |
| TW201517140A (zh) | 2015-05-01 |
| CN105474355B (zh) | 2018-11-13 |
| KR102224416B1 (ko) | 2021-03-05 |
| JP2020141140A (ja) | 2020-09-03 |
| JP2019125803A (ja) | 2019-07-25 |
| US20150044792A1 (en) | 2015-02-12 |
| US9735398B2 (en) | 2017-08-15 |
| CN109273622A (zh) | 2019-01-25 |
| JP2015053479A (ja) | 2015-03-19 |
| CN105474355A (zh) | 2016-04-06 |
| KR20160040513A (ko) | 2016-04-14 |
| JP6870139B2 (ja) | 2021-05-12 |
| TW201901765A (zh) | 2019-01-01 |
| JP6692959B2 (ja) | 2020-05-13 |
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