JP2012028760A - 半導体基板および半導体装置の作製方法 - Google Patents
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Abstract
【解決手段】第1の半導体基板から第2の半導体基板を切り出す際に第2の半導体基板端面に剥離層が露出しないように、第1の分断処理を施す箇所に剥離層が形成されない構造の第1の半導体基板を用いる。また、第2の半導体基板に対して第2の分断処理を施す前に、第2の半導体基板の被剥離層上に支持材料を設ける。
【選択図】図1
Description
本実施の形態では、第1の半導体基板の構造および第2の半導体基板の構造について、図1を用いて説明するとともに、第2の半導体基板を用いて半導体装置を作製する方法について、図2および図3を用いて説明する。なお、図1(a)は第1の半導体基板の上面図であり、図1(b)は図1(a)の一点鎖線X1−X2部分についての断面図であり、破線部分A1−A2、破線部分B1−B2、破線部分C1−C2および破線部分D1−D2は、第1の基板から第2の基板を切り出すための分断ラインを示す。また、図1(c)は図1(a)より切り出された第2の半導体基板の構造である。
本実施の形態では、実施の形態1にて記載した半導体装置の作製方法に関して、半導体装置の動作に関与する半導体回路104が形成された被剥離層106から、基板101をより簡便に剥離する方法について、図4を用いて説明する。
その結果、剥離層102が露出した基板外周の一部または全部において、被剥離層106から基板101が剥離された箇所が形成される(図4(c)参照。)。
これにより、支持材料200の被剥離層106と接する面における密着性が低下するため、支持材料200を被剥離層106から剥離できる。したがって、図3(e)と同様に、可撓性を有する半導体装置310を作製できる。
本実施の形態では、実施の形態1にて記載した半導体装置の作製方法に関して、異なる支持材料を用いて半導体装置を作製する方法について、図5を用いて説明する。
本実施の形態では、実施の形態1にて記載した半導体装置の作製方法に関して、異なる支持材料を用いて半導体装置を作製する方法について、図6を用いて説明する。
101 基板
102 剥離層
104 半導体回路
106 被剥離層
110 第2の半導体基板
200 支持材料
202 先端の鋭利な刃
204 固定用治具
205 先端の鋭利な刃
300 接着材料
302 ベース基材
304 密着性低下処理
310 半導体装置
400 接着材料
402 剥離補助基板
403 板状物体
500 支持材料
600 支持材料
602 接着材料
604 溶媒
610 半導体装置
Claims (5)
- 基板上に複数の島状の剥離層と、
前記剥離層の端面を覆う被剥離層を有する第1の半導体基板を作製し、
前記被剥離層は前記剥離層上に半導体回路を備え、
前記第1の半導体基板の前記基板と前記被剥離層が接する部分に第1の分断処理を施し、
基板上に一つの島状の剥離層と、
前記剥離層を覆う被剥離層を備える第2の半導体基板を作製し、
前記第2の半導体基板の前記被剥離層上に剥離可能な支持材料を設け、
前記第2の半導体基板の前記剥離層と前記被剥離層が積層された部分において、前記基板に対して第2の分断処理を施して前記第2の半導体基板の端面に剥離層を露出し、
前記被剥離層から前記基板を剥離し、
前記被剥離層の前記基板を分離した面に接着材料を介してベース基材を設け、
前記剥離可能な支持材料を剥離する半導体装置の作製方法。 - 基板上に複数の島状の剥離層と、
前記剥離層の端面を覆う被剥離層を有する第1の半導体基板を作製し、
前記被剥離層は前記剥離層上に半導体回路を備え、
前記第1の半導体基板の前記基板と前記被剥離層が接する部分に第1の分断処理を施し、
基板上に一つの島状の剥離層と、
前記剥離層を覆う被剥離層を備える第2の半導体基板を作製し、
前記第2の半導体基板の前記被剥離層上に剥離可能な支持材料を設け、
前記第2の半導体基板の前記剥離層と前記被剥離層が積層された部分において、前記基板に対して第2の分断処理を施して前記第2の半導体基板の端面に剥離層を露出し、
前記第2の半導体基板の前記被剥離層が形成されていない面に接着材料を介して剥離補助基板を設置し、
前記被剥離層から前記基板を剥離し、
前記被剥離層の前記基板を分離した面に接着材料を介してベース基材を設け、
前記剥離可能な支持材料を剥離する半導体装置の作製方法。 - 請求項1および2において、剥離可能な支持材料として、粘着性が低下する材料を使用することを特徴とする、半導体装置の作製方法。
- 請求項1および2において、剥離可能な支持材料として、前記被剥離層から前記基板を分離するのに必要な力よりも前記支持材料と前記被剥離層の粘着力が強く、かつ、前記接着材料と前記被剥離層の接着力よりも前記支持材料と前記被剥離層の粘着力が弱い材料を使用することを特徴とする、半導体装置の作製方法。
- 請求項1および2において、剥離可能な支持材料として、溶媒に浸すことにより溶解する材料を使用することを特徴とする、半導体装置の作製方法。
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Cited By (3)
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CN100349164C (zh) * | 2002-04-22 | 2007-11-14 | 佳能株式会社 | 信息处理装置、监视方法、程序和存储介质 |
JP2015053479A (ja) * | 2013-08-06 | 2015-03-19 | 株式会社半導体エネルギー研究所 | 剥離方法 |
WO2020183588A1 (ja) * | 2019-03-11 | 2020-09-17 | シャープ株式会社 | 電子デバイスの製造方法 |
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US8507322B2 (en) | 2010-06-24 | 2013-08-13 | Akihiro Chida | Semiconductor substrate and method for manufacturing semiconductor device |
KR102091687B1 (ko) | 2012-07-05 | 2020-03-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치의 제작 방법 |
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JP5917026B2 (ja) | 2016-05-11 |
US20140248744A1 (en) | 2014-09-04 |
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US8728868B2 (en) | 2014-05-20 |
US20130344681A1 (en) | 2013-12-26 |
US9190428B2 (en) | 2015-11-17 |
JP2016136644A (ja) | 2016-07-28 |
US9780070B2 (en) | 2017-10-03 |
JP6321854B2 (ja) | 2018-05-09 |
JP2017147463A (ja) | 2017-08-24 |
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US20110318881A1 (en) | 2011-12-29 |
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