JP2015038964A - ３次元半導体フィーチャ内での空隙を含まないタングステン充填のための方法および装置 - Google Patents

３次元半導体フィーチャ内での空隙を含まないタングステン充填のための方法および装置 Download PDF

Info

Publication number
JP2015038964A
JP2015038964A JP2014107102A JP2014107102A JP2015038964A JP 2015038964 A JP2015038964 A JP 2015038964A JP 2014107102 A JP2014107102 A JP 2014107102A JP 2014107102 A JP2014107102 A JP 2014107102A JP 2015038964 A JP2015038964 A JP 2015038964A
Authority
JP
Japan
Prior art keywords
tungsten
layer
etching
processing chamber
etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014107102A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015038964A5 (https=
Inventor
アナンド・チャンドラシェカー
Chandrashekar Anand
ジョイディープ・グーハ
Guha Joydeep
ラシーナ・フマユン
Humayun Raashina
ホワ・シアーン
Hua Xiang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2015038964A publication Critical patent/JP2015038964A/ja
Publication of JP2015038964A5 publication Critical patent/JP2015038964A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0261—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the filling method or the material of the conductive fill
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014107102A 2013-05-24 2014-05-23 ３次元半導体フィーチャ内での空隙を含まないタングステン充填のための方法および装置 Pending JP2015038964A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361827511P 2013-05-24 2013-05-24
US61/827,511 2013-05-24

Publications (2)

Publication Number Publication Date
JP2015038964A true JP2015038964A (ja) 2015-02-26
JP2015038964A5 JP2015038964A5 (https=) 2017-07-06

Family

ID=51935639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014107102A Pending JP2015038964A (ja) 2013-05-24 2014-05-23 ３次元半導体フィーチャ内での空隙を含まないタングステン充填のための方法および装置

Country Status (4)

Country Link
US (1) US9082826B2 (https=)
JP (1) JP2015038964A (https=)
KR (1) KR20140138092A (https=)
SG (1) SG10201402625UA (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10316410B2 (en) 2016-09-13 2019-06-11 Tokyo Electron Limited Method of filling recesses in substrate with tungsten
US10490466B2 (en) 2015-09-01 2019-11-26 Toshiba Memory Corporation Semiconductor manufacturing method and semiconductor manufacturing apparatus
JP7647185B2 (ja) 2021-03-09 2025-03-18 東京エレクトロン株式会社 タングステン膜を成膜する方法、及びシステム

Families Citing this family (177)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129270B1 (en) * 2008-12-10 2012-03-06 Novellus Systems, Inc. Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9548228B2 (en) 2009-08-04 2017-01-17 Lam Research Corporation Void free tungsten fill in different sized features
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
CN113862634A (zh) 2012-03-27 2021-12-31 诺发系统公司 钨特征填充
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9165786B1 (en) * 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9349637B2 (en) 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
US9748137B2 (en) 2014-08-21 2017-08-29 Lam Research Corporation Method for void-free cobalt gap fill
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9595466B2 (en) * 2015-03-20 2017-03-14 Applied Materials, Inc. Methods for etching via atomic layer deposition (ALD) cycles
US9576788B2 (en) 2015-04-24 2017-02-21 Applied Materials, Inc. Cleaning high aspect ratio vias
TW201700761A (zh) * 2015-05-13 2017-01-01 應用材料股份有限公司 經由基材的有機金屬或矽烷預處理而改良的鎢膜
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
KR102447489B1 (ko) 2015-09-02 2022-09-27 삼성전자주식회사 반도체 메모리 소자
US9449921B1 (en) 2015-12-15 2016-09-20 International Business Machines Corporation Voidless contact metal structures
US9735151B1 (en) 2016-03-24 2017-08-15 Western Digital Technologies, Inc. 3D cross-point memory device
US10504746B2 (en) 2016-04-12 2019-12-10 Applied Materials, Inc. HKMG integration
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10566211B2 (en) 2016-08-30 2020-02-18 Lam Research Corporation Continuous and pulsed RF plasma for etching metals
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
KR102572271B1 (ko) 2017-04-10 2023-08-28 램 리써치 코포레이션 몰리브덴을 함유하는 저 저항률 막들
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US10950500B2 (en) * 2017-05-05 2021-03-16 Applied Materials, Inc. Methods and apparatus for filling a feature disposed in a substrate
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
KR102414511B1 (ko) 2017-08-02 2022-06-30 삼성전자주식회사 3차원 반도체 소자
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10014180B1 (en) 2017-08-21 2018-07-03 Globalfoundries Inc. Tungsten gate and method for forming
KR102424993B1 (ko) * 2017-09-11 2022-07-25 에스케이하이닉스 주식회사 반도체 장치의 제조방법
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US10170493B1 (en) * 2017-12-20 2019-01-01 Micron Technology, Inc. Assemblies having vertically-stacked conductive structures
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
KR102614728B1 (ko) 2018-04-04 2023-12-19 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
KR102806630B1 (ko) 2018-05-03 2025-05-12 램 리써치 코포레이션 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US12014928B2 (en) * 2018-07-31 2024-06-18 Lam Research Corporation Multi-layer feature fill
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
TWI887009B (zh) 2018-10-26 2025-06-11 美商蘭姆研究公司 三端子記憶體元件的自對準垂直集成
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
WO2020118100A1 (en) 2018-12-05 2020-06-11 Lam Research Corporation Void free low stress fill
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
SG11202108725XA (en) * 2019-02-13 2021-09-29 Lam Res Corp Tungsten feature fill with inhibition control
SG11202109796QA (en) 2019-03-11 2021-10-28 Lam Res Corp Precursors for deposition of molybdenum-containing films
US11189633B2 (en) 2019-03-21 2021-11-30 Samsung Electronics Co., Ltd. Semiconductor device and apparatus of manufacturing the same
JP2022546404A (ja) 2019-08-28 2022-11-04 ラム リサーチ コーポレーション 金属の堆積
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
US11849581B2 (en) 2020-10-06 2023-12-19 Micron Technology, Inc. Electronic devices with recessed conductive structures
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
CN115702474A (zh) 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
US20250183041A1 (en) * 2022-02-24 2025-06-05 Lam Research Corporation Low resistance molybdenum deposition for logic source/drain contacts

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016066A (ja) * 2000-06-27 2002-01-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003142484A (ja) * 2001-10-31 2003-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
WO2007023950A1 (ja) * 2005-08-26 2007-03-01 Hitachi, Ltd. 半導体装置の製造方法
US20100072623A1 (en) * 2008-09-19 2010-03-25 Advanced Micro Devices, Inc. Semiconductor device with improved contact plugs, and related fabrication methods
JP2010153852A (ja) * 2008-12-10 2010-07-08 Novellus Systems Inc 空隙を充填するべく低抵抗率のタングステン膜を堆積させる方法
JP2011035366A (ja) * 2009-08-04 2011-02-17 Novellus Systems Inc 高アスペクト比のフィーチャーへのタングステン堆積方法
JP2011054969A (ja) * 2009-09-03 2011-03-17 Samsung Electronics Co Ltd 半導体素子及びその形成方法
JP2012151187A (ja) * 2011-01-17 2012-08-09 Toshiba Corp 半導体記憶装置の製造方法
JP2013032575A (ja) * 2011-07-06 2013-02-14 Tokyo Electron Ltd タングステン膜の成膜方法
JP2015512568A (ja) * 2012-03-27 2015-04-27 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ タングステンによるフィーチャ充填

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714520A (en) * 1985-07-25 1987-12-22 Advanced Micro Devices, Inc. Method for filling a trench in an integrated circuit structure without producing voids
JPS62216224A (ja) 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
US5037775A (en) 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
JP3019367B2 (ja) 1990-06-21 2000-03-13 日本電気株式会社 半導体装置の製造方法
US5164330A (en) 1991-04-17 1992-11-17 Intel Corporation Etchback process for tungsten utilizing a NF3/AR chemistry
JP2881371B2 (ja) 1993-09-20 1999-04-12 東京エレクトロン株式会社 真空処理装置及び真空処理装置集合体のクリーニング方法
KR0179677B1 (ko) 1993-12-28 1999-04-15 사토 후미오 반도체장치 및 그 제조방법
JP3291889B2 (ja) 1994-02-15 2002-06-17 ソニー株式会社 ドライエッチング方法
US5489552A (en) 1994-12-30 1996-02-06 At&T Corp. Multiple layer tungsten deposition process
JP2737764B2 (ja) 1995-03-03 1998-04-08 日本電気株式会社 半導体装置及びその製造方法
JP3538970B2 (ja) 1995-05-24 2004-06-14 ヤマハ株式会社 配線形成法
US5747379A (en) 1996-01-11 1998-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating seamless tungsten plug employing tungsten redeposition and etch back
JPH09326436A (ja) 1996-06-06 1997-12-16 Sony Corp 配線形成方法
JP3869089B2 (ja) 1996-11-14 2007-01-17 株式会社日立製作所 半導体集積回路装置の製造方法
JP2891952B2 (ja) 1996-12-17 1999-05-17 芝浦メカトロニクス株式会社 半導体装置の製造方法
US6184158B1 (en) 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US5866483A (en) 1997-04-04 1999-02-02 Applied Materials, Inc. Method for anisotropically etching tungsten using SF6, CHF3, and N2
US5807786A (en) 1997-07-30 1998-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a barrier layer to protect programmable antifuse structure from damage during fabrication sequence
TW359884B (en) 1998-01-07 1999-06-01 Nanya Technology Co Ltd Multi-level interconnects with I-plug and production process therefor
US6110822A (en) 1998-03-25 2000-08-29 Taiwan Semiconductor Manufacturing Company Method for forming a polysilicon-interconnect contact in a TFT-SRAM
US6432830B1 (en) 1998-05-15 2002-08-13 Applied Materials, Inc. Semiconductor fabrication process
TW436366B (en) 1998-08-21 2001-05-28 United Microelectronics Corp Method of fabricating a plug
US6245654B1 (en) 1999-03-31 2001-06-12 Taiwan Semiconductor Manufacturing Company, Ltd Method for preventing tungsten contact/via plug loss after a backside pressure fault
US6294468B1 (en) 1999-05-24 2001-09-25 Agere Systems Guardian Corp. Method of chemical vapor depositing tungsten films
JP2001274114A (ja) 2000-03-28 2001-10-05 Toshiba Corp 半導体装置の製造方法
JP2002009017A (ja) 2000-06-22 2002-01-11 Mitsubishi Electric Corp 半導体装置の製造方法
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
JP2002043201A (ja) 2000-07-28 2002-02-08 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
US6376376B1 (en) 2001-01-16 2002-04-23 Chartered Semiconductor Manufacturing Ltd. Method to prevent CU dishing during damascene formation
KR20020072996A (ko) 2001-03-14 2002-09-19 주성엔지니어링(주) 금속 플러그 형성방법
US7589017B2 (en) 2001-05-22 2009-09-15 Novellus Systems, Inc. Methods for growing low-resistivity tungsten film
US7955972B2 (en) 2001-05-22 2011-06-07 Novellus Systems, Inc. Methods for growing low-resistivity tungsten for high aspect ratio and small features
US7005372B2 (en) 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US6635965B1 (en) 2001-05-22 2003-10-21 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7141494B2 (en) 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
JP2002353161A (ja) 2001-05-25 2002-12-06 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP3822804B2 (ja) 2001-06-18 2006-09-20 株式会社日立製作所 半導体装置の製造方法
US6686278B2 (en) 2001-06-19 2004-02-03 United Microelectronics Corp. Method for forming a plug metal layer
US7115516B2 (en) 2001-10-09 2006-10-03 Applied Materials, Inc. Method of depositing a material layer
KR20030058853A (ko) 2002-01-02 2003-07-07 주식회사 하이닉스반도체 반도체 소자의 플러그 형성 방법
JP3971192B2 (ja) 2002-01-11 2007-09-05 株式会社アルバック Ｃｖｄ装置
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
KR100446300B1 (ko) 2002-05-30 2004-08-30 삼성전자주식회사 반도체 소자의 금속 배선 형성 방법
US7240564B2 (en) 2002-07-30 2007-07-10 Alliant Techsystems Inc. Method and apparatus for detecting and determining event characteristics with reduced data collection
US6802944B2 (en) 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
KR100542740B1 (ko) 2002-11-11 2006-01-11 삼성전자주식회사 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
KR100528073B1 (ko) 2003-04-07 2005-11-15 동부아남반도체 주식회사 반도체소자 제조방법
US6844258B1 (en) 2003-05-09 2005-01-18 Novellus Systems, Inc. Selective refractory metal and nitride capping
US7205240B2 (en) 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
KR20050011479A (ko) 2003-07-23 2005-01-29 주식회사 하이닉스반도체 반도체 소자의 텅스텐 콘택플러그 형성방법
US7223693B2 (en) 2003-12-12 2007-05-29 Samsung Electronics Co., Ltd. Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same
US7199045B2 (en) 2004-05-26 2007-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-filled openings for submicron devices and methods of manufacture thereof
KR20050013187A (ko) 2004-12-28 2005-02-03 삼성전자주식회사 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
KR100642750B1 (ko) 2005-01-31 2006-11-10 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP4671729B2 (ja) 2005-03-28 2011-04-20 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP4783169B2 (ja) 2006-02-13 2011-09-28 パナソニック株式会社 ドライエッチング方法、微細構造形成方法、モールド及びその製造方法
US7276796B1 (en) 2006-03-15 2007-10-02 International Business Machines Corporation Formation of oxidation-resistant seed layer for interconnect applications
US7655567B1 (en) 2007-07-24 2010-02-02 Novellus Systems, Inc. Methods for improving uniformity and resistivity of thin tungsten films
US7772114B2 (en) 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
US8551885B2 (en) 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
US7964502B2 (en) 2008-11-25 2011-06-21 Freescale Semiconductor, Inc. Multilayered through via
US8129270B1 (en) 2008-12-10 2012-03-06 Novellus Systems, Inc. Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
WO2010077847A2 (en) 2008-12-31 2010-07-08 Applied Materials, Inc. Method of depositing tungsten film with reduced resistivity and improved surface morphology
JP5550843B2 (ja) 2009-03-19 2014-07-16 ラピスセミコンダクタ株式会社 半導体装置の製造方法
US8153520B1 (en) 2009-08-03 2012-04-10 Novellus Systems, Inc. Thinning tungsten layer after through silicon via filling
US9034768B2 (en) 2010-07-09 2015-05-19 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US9548228B2 (en) 2009-08-04 2017-01-17 Lam Research Corporation Void free tungsten fill in different sized features
US8124531B2 (en) * 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9129945B2 (en) 2010-03-24 2015-09-08 Applied Materials, Inc. Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
US8916435B2 (en) 2011-09-09 2014-12-23 International Business Machines Corporation Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory
JP6195898B2 (ja) 2012-03-27 2017-09-13 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 核形成の抑制を伴うタングステンによるフィーチャ充填
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016066A (ja) * 2000-06-27 2002-01-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003142484A (ja) * 2001-10-31 2003-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
WO2007023950A1 (ja) * 2005-08-26 2007-03-01 Hitachi, Ltd. 半導体装置の製造方法
US20100072623A1 (en) * 2008-09-19 2010-03-25 Advanced Micro Devices, Inc. Semiconductor device with improved contact plugs, and related fabrication methods
JP2010153852A (ja) * 2008-12-10 2010-07-08 Novellus Systems Inc 空隙を充填するべく低抵抗率のタングステン膜を堆積させる方法
JP2011035366A (ja) * 2009-08-04 2011-02-17 Novellus Systems Inc 高アスペクト比のフィーチャーへのタングステン堆積方法
JP2011054969A (ja) * 2009-09-03 2011-03-17 Samsung Electronics Co Ltd 半導体素子及びその形成方法
JP2012151187A (ja) * 2011-01-17 2012-08-09 Toshiba Corp 半導体記憶装置の製造方法
JP2013032575A (ja) * 2011-07-06 2013-02-14 Tokyo Electron Ltd タングステン膜の成膜方法
JP2015512568A (ja) * 2012-03-27 2015-04-27 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ タングステンによるフィーチャ充填

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10490466B2 (en) 2015-09-01 2019-11-26 Toshiba Memory Corporation Semiconductor manufacturing method and semiconductor manufacturing apparatus
US10316410B2 (en) 2016-09-13 2019-06-11 Tokyo Electron Limited Method of filling recesses in substrate with tungsten
JP7647185B2 (ja) 2021-03-09 2025-03-18 東京エレクトロン株式会社 タングステン膜を成膜する方法、及びシステム

Also Published As

Publication number Publication date
US9082826B2 (en) 2015-07-14
US20140349477A1 (en) 2014-11-27
SG10201402625UA (en) 2014-12-30
KR20140138092A (ko) 2014-12-03

Similar Documents

Publication Publication Date Title
US9082826B2 (en) Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
KR102609125B1 (ko) 리모트 플라즈마 프로세스를 위한 챔버 컨디셔닝
KR102510612B1 (ko) 향상된 텅스텐 증착 충진을 위한 텅스텐의 원자층 에칭
TWI878477B (zh) 鉬的原子層蝕刻
US12266542B2 (en) Atomic layer etching for subtractive metal etch
US11011388B2 (en) Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching
KR102748920B1 (ko) 교번하는 에칭 및 패시베이션 프로세스
KR102829108B1 (ko) 반도체 디바이스 제작에서의 주석 옥사이드 막들
TWI627676B (zh) 於不同尺寸特徵部內之無空穴鎢塡充物
CN107845572B (zh) 用于蚀刻金属的连续rf等离子体和脉冲rf等离子体
CN106067442B (zh) 钴深蚀刻
US9991128B2 (en) Atomic layer etching in continuous plasma
TW202129049A (zh) 鉬填充
TWI657535B (zh) 用於半導體裝置中之金屬內連線的介電阻障層之選擇性形成
US9548228B2 (en) Void free tungsten fill in different sized features
US20230298904A1 (en) Electron excitation atomic layer etch
KR20160087348A (ko) 원자 스케일 프로세스들: ald (atomic layer deposition) 및 ale (atomic layer etch) 의 통합
KR20160140448A (ko) 순차적인 cvd 프로세스에 의한 저 불소 텅스텐의 증착
CN112335016A (zh) 高深宽比结构的有效率的清洁和蚀刻
CN115868002A (zh) 高纵横比3d nand架构中的钨字线填充
KR20240052872A (ko) 반도체 프로세싱 동안 프로세스 가스 램핑
US20260068565A1 (en) Selective material removal with angular beam

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170523

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170523

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180315

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180320

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180613

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20181211