JP2014534322A5 - - Google Patents

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Publication number
JP2014534322A5
JP2014534322A5 JP2014541054A JP2014541054A JP2014534322A5 JP 2014534322 A5 JP2014534322 A5 JP 2014534322A5 JP 2014541054 A JP2014541054 A JP 2014541054A JP 2014541054 A JP2014541054 A JP 2014541054A JP 2014534322 A5 JP2014534322 A5 JP 2014534322A5
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Prior art keywords
nanocrystal
semiconductor structure
shell
core
anisotropic
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JP2014541054A
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English (en)
Japanese (ja)
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JP2014534322A (ja
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Priority claimed from US13/485,756 external-priority patent/US9159872B2/en
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Priority claimed from PCT/US2012/055625 external-priority patent/WO2013070320A1/en
Publication of JP2014534322A publication Critical patent/JP2014534322A/ja
Publication of JP2014534322A5 publication Critical patent/JP2014534322A5/ja
Pending legal-status Critical Current

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JP2014541054A 2011-11-09 2012-09-14 ナノ結晶コア及びナノ結晶シェルを有する半導体構造 Pending JP2014534322A (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201161557653P 2011-11-09 2011-11-09
US61/557,653 2011-11-09
US201161558974P 2011-11-11 2011-11-11
US201161558964P 2011-11-11 2011-11-11
US61/558,964 2011-11-11
US61/558,974 2011-11-11
US13/485,756 US9159872B2 (en) 2011-11-09 2012-05-31 Semiconductor structure having nanocrystalline core and nanocrystalline shell
US13/485,756 2012-05-31
PCT/US2012/055625 WO2013070320A1 (en) 2011-11-09 2012-09-14 Semiconductor structure having nanocrystalline core and nanocrystalline shell

Publications (2)

Publication Number Publication Date
JP2014534322A JP2014534322A (ja) 2014-12-18
JP2014534322A5 true JP2014534322A5 (enExample) 2015-11-05

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JP2014541055A Active JP6161620B2 (ja) 2011-11-09 2012-09-14 ナノ結晶コア及び絶縁コートを有するナノ結晶シェルを有する半導体構造
JP2014541053A Pending JP2015504459A (ja) 2011-11-09 2012-09-14 マトリックス中に半導体構造が埋め込まれたコンポジット
JP2014541054A Pending JP2014534322A (ja) 2011-11-09 2012-09-14 ナノ結晶コア及びナノ結晶シェルを有する半導体構造

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JP2014541055A Active JP6161620B2 (ja) 2011-11-09 2012-09-14 ナノ結晶コア及び絶縁コートを有するナノ結晶シェルを有する半導体構造
JP2014541053A Pending JP2015504459A (ja) 2011-11-09 2012-09-14 マトリックス中に半導体構造が埋め込まれたコンポジット

Country Status (6)

Country Link
US (5) US20130112942A1 (enExample)
EP (7) EP3879585A1 (enExample)
JP (3) JP6161620B2 (enExample)
KR (3) KR102009927B1 (enExample)
CN (3) CN104024370B (enExample)
WO (3) WO2013070321A1 (enExample)

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