WO2008099039A3 - Dispositivo para acoplar la luz de forma óptima a una célula solar de banda intermedia realizada mediante puntos cuánticos - Google Patents

Dispositivo para acoplar la luz de forma óptima a una célula solar de banda intermedia realizada mediante puntos cuánticos Download PDF

Info

Publication number
WO2008099039A3
WO2008099039A3 PCT/ES2008/000078 ES2008000078W WO2008099039A3 WO 2008099039 A3 WO2008099039 A3 WO 2008099039A3 ES 2008000078 W ES2008000078 W ES 2008000078W WO 2008099039 A3 WO2008099039 A3 WO 2008099039A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
intermediate band
solar cell
quantum dots
band
Prior art date
Application number
PCT/ES2008/000078
Other languages
English (en)
French (fr)
Other versions
WO2008099039A2 (es
Inventor
Lopez Antonio Luque
Vega Antonio Marti
Fernandez-Pola Fernand Briones
Resa Pablo Aitor Postigo
Original Assignee
Univ Madrid Politecnica
Consejo Superior Investigacion
Lopez Antonio Luque
Vega Antonio Marti
Fernandez-Pola Fernand Briones
Resa Pablo Aitor Postigo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Madrid Politecnica, Consejo Superior Investigacion, Lopez Antonio Luque, Vega Antonio Marti, Fernandez-Pola Fernand Briones, Resa Pablo Aitor Postigo filed Critical Univ Madrid Politecnica
Publication of WO2008099039A2 publication Critical patent/WO2008099039A2/es
Publication of WO2008099039A3 publication Critical patent/WO2008099039A3/es

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236Superlattices; Multiple quantum well structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Abstract

Dispositivo para acoplar la luz a una célula solar (8) de banda intermedia realizada mediante puntos cuánticos que además concentra la luz. La energía de la luz que emite el material luminiscente (2) se elige para que produzca transiciones entre la banda de valencia y la banda de conducción de la célula. Los pigmentos del material luminiscente (6) se eligen para que los fotones emitidos produzcan transiciones desde la banda de valencia a la banda intermedia y desde ésta a la banda de conducción. Los cristales fotónicos (1) y (3) impiden que la luz emitida por la capa (2) escape. Los cristales fotónicos (4) y (5) impiden que la luz emitida por el material (6) escape. El dispositivo consta, además, de un reflector (7) y de un soporte (9).
PCT/ES2008/000078 2007-02-16 2008-02-14 Dispositivo para acoplar la luz de forma óptima a una célula solar de banda intermedia realizada mediante puntos cuánticos WO2008099039A2 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ES200700411A ES2277800B2 (es) 2007-02-16 2007-02-16 Dispositivo para acoplar la luz de forma optima a una celula solar de banda intermedia realizada mediante puntos cuanticos.
ESP200700411 2007-02-16

Publications (2)

Publication Number Publication Date
WO2008099039A2 WO2008099039A2 (es) 2008-08-21
WO2008099039A3 true WO2008099039A3 (es) 2008-10-09

Family

ID=38330875

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/ES2008/000078 WO2008099039A2 (es) 2007-02-16 2008-02-14 Dispositivo para acoplar la luz de forma óptima a una célula solar de banda intermedia realizada mediante puntos cuánticos

Country Status (2)

Country Link
ES (1) ES2277800B2 (es)
WO (1) WO2008099039A2 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2311431B2 (es) * 2008-06-06 2009-07-21 Universidad Politecnica De Madrid Procedimiento de fabricacion de dispositivos optoelectronicos de banda intermedia basados en tecnologia de lamina delgada.
US9496442B2 (en) 2009-01-22 2016-11-15 Omnipv Solar modules including spectral concentrators and related manufacturing methods
US20110155215A1 (en) * 2009-12-31 2011-06-30 Du Pont Apollo Limited Solar cell having a two dimensional photonic crystal
ES2537029B1 (es) * 2013-11-29 2016-05-18 Abengoa Solar New Tech Sa Dispositivo de concentracion solar, panel fotovoltaico e invernadero que lo incluyen

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4164432A (en) * 1978-08-09 1979-08-14 Owens-Illinois, Inc. Luminescent solar collector structure
EP1130657A2 (en) * 1999-06-09 2001-09-05 Universidad Politecnica De Madrid Intermediate band semiconductor photovoltaic solar cell
JP2006330284A (ja) * 2005-05-25 2006-12-07 Sharp Corp 非相反デバイスおよび光電変換装置
US20070000536A1 (en) * 2005-01-19 2007-01-04 Yasha Yi Light trapping in thin film solar cells using textured photonic crystal

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4164432A (en) * 1978-08-09 1979-08-14 Owens-Illinois, Inc. Luminescent solar collector structure
EP1130657A2 (en) * 1999-06-09 2001-09-05 Universidad Politecnica De Madrid Intermediate band semiconductor photovoltaic solar cell
US20070000536A1 (en) * 2005-01-19 2007-01-04 Yasha Yi Light trapping in thin film solar cells using textured photonic crystal
JP2006330284A (ja) * 2005-05-25 2006-12-07 Sharp Corp 非相反デバイスおよび光電変換装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Solar Energy Materials & Solar Cells", vol. 87, May 2005, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, HOLLAND, article LUQUE A. ET AL.: "FULLSPECTRUM: a new PV wave making more efficient use of the solar spectrum", pages: 467 - 479, XP025333315, DOI: doi:10.1016/j.solmat.2004.07.034 *
CUADRA L., MARTI A., LUQUE A.: "Present status of intermediate band solar cell research", THIN SOLID FILMS, PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, HOLANDA, vol. 451-452, 22 March 2004 (2004-03-22), pages 593 - 599, XP004495170, DOI: doi:10.1016/j.tsf.2003.11.047 *
EVENSON S.A. AND RAWICZ A.H.: "Thin-film luminescent concentrators for integrated devices: a cookbook", APPLIED OPTICS, OPTICAL SOCIETY OF AMERICA, 1 November 1995 (1995-11-01), pages 7.302 - 7.306 *

Also Published As

Publication number Publication date
ES2277800A1 (es) 2007-07-16
ES2277800B2 (es) 2009-02-16
WO2008099039A2 (es) 2008-08-21

Similar Documents

Publication Publication Date Title
TW200711189A (en) A light source
TW200712167A (en) Color converting material composition and color converting medium including the same
TW200611967A (en) Device and method for emitting output light using quantum dots and non-quantum fluorescent material
WO2010002221A3 (ko) 파장변환형 발광다이오드 칩 및 이를 구비한 발광장치
TW200725951A (en) Light emitting device with an improved CaAlSiN light converting material
JP2014534322A5 (es)
WO2009028456A1 (ja) 有機el発光素子
WO2010104275A3 (en) Lamp cover and led lamp using the same
WO2012076296A3 (de) Leuchtvorrichtung
WO2009024952A3 (en) Light source including reflective wavelength-converting layer
WO2009086028A3 (en) Carbazole-containing materials in phosphorescent light emitting diodes
IL177582A0 (en) A photon source
WO2012021643A3 (en) Quantum dot based lighting
WO2012134992A3 (en) Light transmitting thermoplastic resins comprising down conversion material and their use in photovoltaic modules
WO2008123492A1 (ja) 面発光体
WO2013123128A8 (en) Solid-state lamps with improved emission efficiency and photoluminescence wavelength conversion components therefor
WO2012042452A3 (en) Wavelength converted light emitting device
TW200614543A (en) Luminescent ceramic for a light emitting device
WO2009085344A3 (en) Dibenzothiophene, dibenzofuran and/or carbazole-containing materials in phosphorescent light emitting diodes
WO2007122531A8 (en) Fluorescent lighting creating white light
JP2010525555A5 (es)
WO2011109100A3 (en) Led lamp or bulb with remote phosphor and diffuser configuration with enhanced scattering properties
WO2013028000A3 (ko) 고전류 구동용 발광 소자
WO2009024509A3 (de) Solarzellenaufbau
WO2009028818A3 (en) Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08736682

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08736682

Country of ref document: EP

Kind code of ref document: A2