WO2008123492A1 - 面発光体 - Google Patents

面発光体 Download PDF

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Publication number
WO2008123492A1
WO2008123492A1 PCT/JP2008/056308 JP2008056308W WO2008123492A1 WO 2008123492 A1 WO2008123492 A1 WO 2008123492A1 JP 2008056308 W JP2008056308 W JP 2008056308W WO 2008123492 A1 WO2008123492 A1 WO 2008123492A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting body
scattering layer
light emitting
base material
Prior art date
Application number
PCT/JP2008/056308
Other languages
English (en)
French (fr)
Inventor
Norihiro Itou
Takeyuki Yamaki
Nobuhiro Ide
Kenji Kawano
Original Assignee
Panasonic Electric Works Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Electric Works Co., Ltd. filed Critical Panasonic Electric Works Co., Ltd.
Priority to KR1020097021431A priority Critical patent/KR101160736B1/ko
Priority to US12/593,666 priority patent/US8283845B2/en
Priority to CN2008800104198A priority patent/CN101647316B/zh
Priority to EP08739422A priority patent/EP2141962A4/en
Publication of WO2008123492A1 publication Critical patent/WO2008123492A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

　透光性基材１と、透光性基材１の表面に形成された光散乱層２と、光散乱層２の表面に形成され、光または電気エネルギーによって発光する有機もしくは無機の発光体３を備えた面発光体において、光を外部に取り出す効率を高くする。光散乱層２はバインダー４及び２種類の充填材５，６を含み、バインダー４の屈折率をＮｂ、２種類の充填材５，６のうち一方の屈折率をＮｆ１、他方の屈折率をＮｆ２としたときに、Ｎｆ２＞Ｎｂ＞Ｎｆ１の関係を満たす。光散乱層２は、２種類の充填材５，６を含んでいるため、光散乱層２から透光性基材１へ出射する際の臨界角に乱れが生じ、透光性基材１への光の入射率が高まり、光を外部に取り出す効率がより大きくなる。
PCT/JP2008/056308 2007-03-30 2008-03-31 面発光体 WO2008123492A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097021431A KR101160736B1 (ko) 2007-03-30 2008-03-31 면발광체
US12/593,666 US8283845B2 (en) 2007-03-30 2008-03-31 Plane emission device
CN2008800104198A CN101647316B (zh) 2007-03-30 2008-03-31 面发光体
EP08739422A EP2141962A4 (en) 2007-03-30 2008-03-31 SURFACE LIGHT EMISSION BODY

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-095188 2007-03-30
JP2007095188A JP5536977B2 (ja) 2007-03-30 2007-03-30 面発光体

Publications (1)

Publication Number Publication Date
WO2008123492A1 true WO2008123492A1 (ja) 2008-10-16

Family

ID=39830970

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056308 WO2008123492A1 (ja) 2007-03-30 2008-03-31 面発光体

Country Status (6)

Country Link
US (1) US8283845B2 (ja)
EP (1) EP2141962A4 (ja)
JP (1) JP5536977B2 (ja)
KR (1) KR101160736B1 (ja)
CN (1) CN101647316B (ja)
WO (1) WO2008123492A1 (ja)

Cited By (13)

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JP2009004274A (ja) * 2007-06-22 2009-01-08 Panasonic Electric Works Co Ltd 面発光体及び面発光体の製造方法
WO2010077521A2 (en) 2008-12-17 2010-07-08 3M Innovative Properties Company Light extraction film with nanoparticle coatings
JP2010157421A (ja) * 2008-12-26 2010-07-15 Panasonic Electric Works Co Ltd 有機ｅｌ発光装置
JP2010157424A (ja) * 2008-12-26 2010-07-15 Panasonic Electric Works Co Ltd 有機ｅｌ発光装置
JP2010176928A (ja) * 2009-01-27 2010-08-12 Panasonic Electric Works Co Ltd 有機ｅｌ発光装置
WO2010122913A1 (en) * 2009-04-22 2010-10-28 Fujifilm Corporation Fine particle dispersion for light extraction member, coating composition, light extraction member, and organic electroluminescence display device
EP2378837A1 (en) * 2008-12-12 2011-10-19 Hitachi, Ltd. Light-emitting element, light-emitting device using the light-emitting element, and transparent substrate used in light-emitting elements
WO2012133832A1 (ja) * 2011-03-31 2012-10-04 旭硝子株式会社 有機ｌｅｄ素子、透光性基板、および透光性基板の製造方法
JP2014013668A (ja) * 2012-07-03 2014-01-23 Asahi Glass Co Ltd 有機ｌｅｄ素子用の積層基板、及び有機ｌｅｄ素子
WO2014084012A1 (ja) * 2012-11-30 2014-06-05 シャープ株式会社 散乱体基板
WO2014104059A1 (ja) * 2012-12-26 2014-07-03 昭和電工株式会社 有機発光素子、積層基板および有機発光素子の製造方法
JP2015532511A (ja) * 2012-10-01 2015-11-09 コーニング インコーポレイテッド 光取出し下部構造を有するｏｌｅｄ及びこれを組み込んでいる表示デバイス
JP2016526754A (ja) * 2013-06-14 2016-09-05 サン−ゴバン グラス フランス 透明散乱性ｏｌｅｄ基材及び当該基材の作製方法

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TWI365999B (en) * 2008-07-31 2012-06-11 Benq Materials Corp Antiglare film and method of forming the same
JP5321010B2 (ja) * 2008-11-25 2013-10-23 住友大阪セメント株式会社 有機ｅｌ素子
JP5255532B2 (ja) * 2009-03-26 2013-08-07 富士フイルム株式会社 Ｅｌ素子、導電膜形成用感光材料および導電膜
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JP5742838B2 (ja) 2010-04-08 2015-07-01 旭硝子株式会社 有機ｌｅｄ素子、透光性基板、および有機ｌｅｄ素子の製造方法
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ITMI20101250A1 (it) * 2010-07-07 2012-01-08 Getters Spa Miglioramenti per fosfori
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JP5610623B2 (ja) * 2010-09-21 2014-10-22 日東電工株式会社 有機ｅｌデバイス
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JP5735819B2 (ja) 2011-02-22 2015-06-17 パナソニック株式会社 有機エレクトロルミネッセンス素子
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WO2013008982A1 (ko) * 2011-07-14 2013-01-17 엘티씨 (주) 높은 광추출 성능을 갖는 무기 산란막 {inorganic scattering films having high light extraction performance}
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JP6241797B2 (ja) * 2012-07-31 2017-12-06 エルジー・ケム・リミテッド 有機電子素子用基板
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JP2009004274A (ja) * 2007-06-22 2009-01-08 Panasonic Electric Works Co Ltd 面発光体及び面発光体の製造方法
US8575629B2 (en) 2008-12-12 2013-11-05 Hitachi, Ltd. Light-emitting element, light-emitting device using the light-emitting element, and transparent substrate used in light-emitting elements
EP2378837A1 (en) * 2008-12-12 2011-10-19 Hitachi, Ltd. Light-emitting element, light-emitting device using the light-emitting element, and transparent substrate used in light-emitting elements
US8735912B2 (en) 2008-12-12 2014-05-27 Hitachi, Ltd. Light emitting element, light emitting device using the light emitting element, and transparent substrate used in light emitting elements
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CN101647316A (zh) 2010-02-10
EP2141962A1 (en) 2010-01-06
KR101160736B1 (ko) 2012-06-28
JP5536977B2 (ja) 2014-07-02
US20100060142A1 (en) 2010-03-11
EP2141962A4 (en) 2012-06-27
KR20090128487A (ko) 2009-12-15
JP2008251500A (ja) 2008-10-16
CN101647316B (zh) 2011-09-14

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