WO2009038122A1 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
WO2009038122A1
WO2009038122A1 PCT/JP2008/066845 JP2008066845W WO2009038122A1 WO 2009038122 A1 WO2009038122 A1 WO 2009038122A1 JP 2008066845 W JP2008066845 W JP 2008066845W WO 2009038122 A1 WO2009038122 A1 WO 2009038122A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
clad
core
emitting device
optical resonator
Prior art date
Application number
PCT/JP2008/066845
Other languages
English (en)
French (fr)
Inventor
Kazumi Wada
Shiyun Lin
Yosuke Kobayashi
Peng Huei Lim
Original Assignee
The University Of Tokyo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The University Of Tokyo filed Critical The University Of Tokyo
Priority to US12/678,953 priority Critical patent/US8472489B2/en
Publication of WO2009038122A1 publication Critical patent/WO2009038122A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H01S5/1075—Disk lasers with special modes, e.g. whispering gallery lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3224—Si

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

本願発明は、リング状の光共振器を備えた発光素子において、発光のメカニズムを解明することによって、新たな構造を提案してレーザ発振の可能な発光素子を実現することを目的とする。 　本願発明は、基板上に積層されたリング状の光共振器を備える発光素子であって、前記光共振器は光を伝搬させる半導体からなるコアと前記コアに対して積層方向の前記基板側又はその反対側のうち少なくとも前記基板側に積層されたクラッドとを有し、前記コアは少なくともリング内周側及びリング外周側が空間又は前記クラッドよりも屈折率の低い透明体で覆われており、前記クラッドはリング内周側及びリング外周側の一部が空間又は前記クラッドよりも屈折率の低い透明体で覆われていることを特徴とする発光素子である。  
PCT/JP2008/066845 2007-09-18 2008-09-18 発光素子 WO2009038122A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/678,953 US8472489B2 (en) 2007-09-18 2008-09-18 Light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007241408A JP5278868B2 (ja) 2007-09-18 2007-09-18 発光素子
JP2007-241408 2007-09-18

Publications (1)

Publication Number Publication Date
WO2009038122A1 true WO2009038122A1 (ja) 2009-03-26

Family

ID=40467932

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066845 WO2009038122A1 (ja) 2007-09-18 2008-09-18 発光素子

Country Status (3)

Country Link
US (1) US8472489B2 (ja)
JP (1) JP5278868B2 (ja)
WO (1) WO2009038122A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103384950A (zh) * 2013-01-21 2013-11-06 华为技术有限公司 激光器波导装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4897659B2 (ja) * 2007-12-13 2012-03-14 日本電信電話株式会社 微小共振器型光源
JP2013093339A (ja) * 2010-01-29 2013-05-16 Hitachi Ltd ゲルマニウム光学素子
JP2011164299A (ja) * 2010-02-08 2011-08-25 Univ Of Tokyo 光導波路共振器の製造方法及び共振器回路の製造方法
JP5480192B2 (ja) 2011-03-31 2014-04-23 株式会社東芝 半導体発光素子の製造方法
WO2013118248A1 (ja) 2012-02-06 2013-08-15 株式会社日立製作所 発光素子
CN103367383B (zh) * 2012-03-30 2016-04-13 清华大学 发光二极管
JP2013042192A (ja) * 2012-11-30 2013-02-28 Univ Of Tokyo 発光素子
EP3296805B1 (en) 2013-06-12 2021-03-03 Massachusetts Institute Of Technology Optical modulator from standard fabrication processing
WO2017058319A2 (en) 2015-06-30 2017-04-06 Massachusetts Institute Of Technology Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
US11105974B2 (en) 2015-06-30 2021-08-31 Massachusetts Institute Of Technology Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
KR102384228B1 (ko) * 2015-09-30 2022-04-07 삼성전자주식회사 반도체 레이저 공진기 및 이를 포함하는 반도체 레이저 소자
KR102646790B1 (ko) * 2017-02-07 2024-03-13 삼성전자주식회사 레이저 공진기 및 레이저 공진기 어레이
FR3074956B1 (fr) * 2017-12-08 2020-07-17 Commissariat A L Energie Atomique Et Aux Energies Alternatives Procede de realisation de guides d'onde a cœurs a base de ge
US10998376B2 (en) 2019-01-29 2021-05-04 International Business Machines Corporation Qubit-optical-CMOS integration using structured substrates

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001526000A (ja) * 1997-05-20 2001-12-11 ノースウエスタン ユニバーシティ 半導体微小共振器装置
JP2002350141A (ja) * 2001-05-24 2002-12-04 Canon Inc 光ジャイロの駆動方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5790583A (en) 1995-05-25 1998-08-04 Northwestern University Photonic-well Microcavity light emitting devices
US5825799A (en) 1995-05-25 1998-10-20 Northwestern University Microcavity semiconductor laser
US5878070A (en) * 1995-05-25 1999-03-02 Northwestern University Photonic wire microcavity light emitting devices
US6009115A (en) * 1995-05-25 1999-12-28 Northwestern University Semiconductor micro-resonator device
JPH08330673A (ja) * 1995-06-02 1996-12-13 Fujitsu Ltd 光半導体装置
JP2001040348A (ja) 1999-07-28 2001-02-13 Keiogijuku シリコンナノ結晶発光素子及びその製造方法
US6970619B2 (en) * 2001-05-21 2005-11-29 Lucent Technologies Inc. Mechanically tunable optical devices such as interferometers
ATE441954T1 (de) * 2003-02-12 2009-09-15 California Inst Of Techn Ringresonator mit radialem bragg-reflektor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001526000A (ja) * 1997-05-20 2001-12-11 ノースウエスタン ユニバーシティ 半導体微小共振器装置
JP2002350141A (ja) * 2001-05-24 2002-12-04 Canon Inc 光ジャイロの駆動方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103384950A (zh) * 2013-01-21 2013-11-06 华为技术有限公司 激光器波导装置
CN103384950B (zh) * 2013-01-21 2015-09-30 华为技术有限公司 激光器波导装置

Also Published As

Publication number Publication date
US8472489B2 (en) 2013-06-25
US20110044362A1 (en) 2011-02-24
JP5278868B2 (ja) 2013-09-04
JP2009076498A (ja) 2009-04-09

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