DE602004015090D1 - Zweidimensionaler, oberflächenemittierender laser mit photonischem kristall - Google Patents

Zweidimensionaler, oberflächenemittierender laser mit photonischem kristall

Info

Publication number
DE602004015090D1
DE602004015090D1 DE602004015090T DE602004015090T DE602004015090D1 DE 602004015090 D1 DE602004015090 D1 DE 602004015090D1 DE 602004015090 T DE602004015090 T DE 602004015090T DE 602004015090 T DE602004015090 T DE 602004015090T DE 602004015090 D1 DE602004015090 D1 DE 602004015090D1
Authority
DE
Germany
Prior art keywords
twin
dimensional
photonic crystal
emitting laser
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004015090T
Other languages
English (en)
Inventor
Susumu Noda
Mitsuru Yokoyama
Koujirou Sekine
Eiji Miyai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Publication of DE602004015090D1 publication Critical patent/DE602004015090D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
DE602004015090T 2003-03-25 2004-03-23 Zweidimensionaler, oberflächenemittierender laser mit photonischem kristall Expired - Lifetime DE602004015090D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003083706A JP4484134B2 (ja) 2003-03-25 2003-03-25 ２次元フォトニック結晶面発光レーザ
PCT/JP2004/003987 WO2004086575A1 (ja) 2003-03-25 2004-03-23 ２次元フォトニック結晶面発光レーザ

Publications (1)

Publication Number Publication Date
DE602004015090D1 true DE602004015090D1 (de) 2008-08-28

Family

ID=33094971

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004015090T Expired - Lifetime DE602004015090D1 (de) 2003-03-25 2004-03-23 Zweidimensionaler, oberflächenemittierender laser mit photonischem kristall

Country Status (7)

Country Link
EP (1) EP1610427B1 (de)
JP (1) JP4484134B2 (de)
KR (1) KR100792078B1 (de)
CN (1) CN100433473C (de)
CA (1) CA2521005C (de)
DE (1) DE602004015090D1 (de)
WO (1) WO2004086575A1 (de)

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JPH0677103B2 (ja) * 1986-08-29 1994-09-28 株式会社コプテイツク ソフト・フオ−カス・レンズ
JP4820749B2 (ja) * 2004-03-05 2011-11-24 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ光源
JP2006128011A (ja) * 2004-10-29 2006-05-18 Konica Minolta Holdings Inc 面発光素子
US20070030873A1 (en) * 2005-08-03 2007-02-08 Finisar Corporation Polarization control in VCSELs using photonics crystals
KR20080049740A (ko) * 2005-09-02 2008-06-04 고쿠리츠 다이가쿠 호진 교토 다이가쿠 2차원 포토닉 결정 면발광 레이저 광원
US20090135869A1 (en) 2005-09-05 2009-05-28 Kyoto University Surface-emitting laser light source using two-dimensional photonic crystal
JP4927411B2 (ja) * 2006-02-03 2012-05-09 古河電気工業株式会社 ２次元フォトニック結晶面発光レーザ
JP5138898B2 (ja) * 2006-03-31 2013-02-06 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ光源
WO2007142919A2 (en) 2006-05-30 2007-12-13 The Dial Corporation Compositions having a high antiviral effeicacy
CA2654079A1 (en) 2006-06-02 2008-03-27 The Dial Corporation Method of inhibiting the transmission of influenza virus
US8155163B2 (en) * 2007-03-23 2012-04-10 Sumitomo Electric Industries, Ltd. Photonic crystal laser and method of manufacturing photonic crystal laser
JP5072402B2 (ja) * 2007-03-26 2012-11-14 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
JP5303221B2 (ja) * 2008-08-29 2013-10-02 独立行政法人科学技術振興機構 ２次元フォトニック結晶レーザ
JP4975130B2 (ja) 2009-05-07 2012-07-11 キヤノン株式会社 フォトニック結晶面発光レーザ
JP5504966B2 (ja) * 2010-02-24 2014-05-28 住友電気工業株式会社 発光素子用基板および発光素子
JP5709178B2 (ja) * 2010-03-01 2015-04-30 国立大学法人京都大学 フォトニック結晶レーザ
JP5627361B2 (ja) * 2010-09-16 2014-11-19 キヤノン株式会社 ２次元フォトニック結晶面発光レーザ
JP5804690B2 (ja) * 2010-11-05 2015-11-04 キヤノン株式会社 面発光レーザ
CN102638001B (zh) * 2011-02-10 2015-04-29 展晶科技(深圳)有限公司 半导体激光器及其制造方法
JP6305056B2 (ja) * 2013-01-08 2018-04-04 ローム株式会社 ２次元フォトニック結晶面発光レーザ
JP6213915B2 (ja) * 2013-03-04 2017-10-18 国立大学法人京都大学 半導体レーザ素子
DE112014001143B4 (de) * 2013-03-07 2022-09-29 Hamamatsu Photonics K.K. Laserelement und Laservorrichtung
US9531160B2 (en) * 2013-03-08 2016-12-27 Japan Science And Technology Agency Two-dimensional photonic crystal surface-emitting laser
WO2014175447A1 (ja) * 2013-04-26 2014-10-30 浜松ホトニクス株式会社 半導体レーザ装置
US9793681B2 (en) 2013-07-16 2017-10-17 Hamamatsu Photonics K.K. Semiconductor laser device
JP6202572B2 (ja) 2014-02-06 2017-09-27 国立大学法人京都大学 半導体レーザモジュール
WO2016031965A1 (ja) * 2014-08-29 2016-03-03 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
JP6860175B2 (ja) * 2016-02-29 2021-04-14 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ及びその製造方法
JP6580097B2 (ja) * 2017-09-05 2019-09-25 株式会社東芝 面発光量子カスケードレーザ
JP7188689B2 (ja) * 2018-08-06 2022-12-13 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7306675B2 (ja) * 2019-02-22 2023-07-11 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
JP7076414B2 (ja) * 2019-08-23 2022-05-27 株式会社東芝 面発光量子カスケードレーザ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5617445A (en) * 1995-06-07 1997-04-01 Picolight Incorporated Quantum cavity light emitting element
JP3983933B2 (ja) * 1999-05-21 2007-09-26 進 野田 半導体レーザ、および半導体レーザの製造方法
US6468823B1 (en) 1999-09-30 2002-10-22 California Institute Of Technology Fabrication of optical devices based on two dimensional photonic crystal structures and apparatus made thereby
CN1156063C (zh) * 2000-06-06 2004-06-30 中国科学院物理研究所 一种光子晶体微腔结构
JP3561244B2 (ja) * 2001-07-05 2004-09-02 独立行政法人 科学技術振興機構 二次元フォトニック結晶面発光レーザ

Also Published As

Publication number Publication date
WO2004086575A1 (ja) 2004-10-07
CA2521005A1 (en) 2004-10-07
CN100433473C (zh) 2008-11-12
CA2521005C (en) 2011-02-08
EP1610427A1 (de) 2005-12-28
CN1765034A (zh) 2006-04-26
EP1610427B1 (de) 2008-07-16
JP4484134B2 (ja) 2010-06-16
KR20050111362A (ko) 2005-11-24
JP2004296538A (ja) 2004-10-21
EP1610427A4 (de) 2006-10-25
KR100792078B1 (ko) 2008-01-04

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: NODA, SUSUMU, UJI-SHI, KYOTO 6110011, JP

Inventor name: MIYAI, EIJI, KYOTO-SHI, KYOTO 6158123, JP

Inventor name: SEKINE, KOUJIROU, HINO-SHI, TOKYO 191- 8511, JP

Inventor name: YOKOYAMA, MITSURU, HINO-SHI, TOKYO 1918511, JP

8364 No opposition during term of opposition