DE60225781D1 - Langwelliges photonisches Bauelement mit InGaAsSb Quantentopfschicht - Google Patents

Langwelliges photonisches Bauelement mit InGaAsSb Quantentopfschicht

Info

Publication number
DE60225781D1
DE60225781D1 DE60225781T DE60225781T DE60225781D1 DE 60225781 D1 DE60225781 D1 DE 60225781D1 DE 60225781 T DE60225781 T DE 60225781T DE 60225781 T DE60225781 T DE 60225781T DE 60225781 D1 DE60225781 D1 DE 60225781D1
Authority
DE
Germany
Prior art keywords
quantum well
well layer
long wavelength
photonic device
wavelength photonic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60225781T
Other languages
English (en)
Other versions
DE60225781T2 (de
Inventor
Ying-Lan Chang
Scott W Corzine
Russell D Dupuis
Min Soo Noh
Jae Hyun Ryou
Michael R T Tan
Ashish Tandon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Board Of Regents Of University Of Texa Us
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies General IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies General IP Singapore Pte Ltd filed Critical Avago Technologies General IP Singapore Pte Ltd
Publication of DE60225781D1 publication Critical patent/DE60225781D1/de
Application granted granted Critical
Publication of DE60225781T2 publication Critical patent/DE60225781T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE60225781T 2002-02-28 2002-11-08 Langwelliges photonisches Bauelement mit InGaAsSb Quantentopfschicht Expired - Lifetime DE60225781T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87422 2002-02-28
US10/087,422 US6711195B2 (en) 2002-02-28 2002-02-28 Long-wavelength photonic device with GaAsSb quantum-well layer

Publications (2)

Publication Number Publication Date
DE60225781D1 true DE60225781D1 (de) 2008-05-08
DE60225781T2 DE60225781T2 (de) 2009-04-16

Family

ID=27733428

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60225781T Expired - Lifetime DE60225781T2 (de) 2002-02-28 2002-11-08 Langwelliges photonisches Bauelement mit InGaAsSb Quantentopfschicht

Country Status (4)

Country Link
US (1) US6711195B2 (de)
EP (1) EP1341279B1 (de)
JP (1) JP4663964B2 (de)
DE (1) DE60225781T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100499128B1 (ko) * 2002-07-19 2005-07-04 삼성전기주식회사 전류제한층이 형성된 반도체 레이저 다이오드 및 그제조방법
US6931044B2 (en) * 2003-02-18 2005-08-16 Agilent Technologies, Inc. Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
US20050184303A1 (en) * 2004-02-25 2005-08-25 Ashish Tandon Strain compensating structure to reduce oxide-induced defects in semiconductor devices
WO2005086243A1 (en) * 2004-03-08 2005-09-15 Showa Denko K.K. Pn junction type croup iii nitride semiconductor light-emitting device
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US20070006801A1 (en) * 2005-07-09 2007-01-11 Stringfellow Gerald B Use of surfactants to control unintentional dopant in semiconductors
JP2007165501A (ja) * 2005-12-13 2007-06-28 Seiko Epson Corp 面発光型半導体レーザ及びその製造方法
DE102006035627A1 (de) * 2006-07-31 2008-02-07 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper
DE102007025092A1 (de) * 2007-05-30 2008-12-04 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
US8124959B2 (en) * 2007-06-28 2012-02-28 Intel Corporation High hole mobility semiconductor device
DE102007030062A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Monolithisch integrierter Laserdiodenchip mit einem Aufbau als Mehrfachstrahl-Laserdiode
US20110096332A1 (en) * 2008-04-03 2011-04-28 Renato Bugge Method and device for gas analysis using an interferometric laser
JP5649157B2 (ja) * 2009-08-01 2015-01-07 住友電気工業株式会社 半導体素子およびその製造方法
FR2953335B1 (fr) * 2009-11-27 2012-04-27 Centre Nat Rech Scient Systeme d'emission laser, heterostructure et zone active a sous-puits quantiques couples, utilisation pour une emission laser a 1,55 micrometres
KR101248383B1 (ko) 2009-12-22 2013-03-28 우리이앤엘 주식회사 반도체 발광소자
JP2012080010A (ja) * 2010-10-05 2012-04-19 Sumitomo Electric Ind Ltd エピタキシャルウエハ、半導体素子、およびこれらの製造方法
JP5991018B2 (ja) * 2012-05-16 2016-09-14 ソニー株式会社 半導体装置
JP2012156562A (ja) * 2012-05-21 2012-08-16 Nec Corp 面発光レーザ
CN103077979A (zh) * 2013-01-07 2013-05-01 中国科学院上海微系统与信息技术研究所 一种GaAs衬底上扩展波长InGaAs探测器结构
KR102276422B1 (ko) * 2014-07-18 2021-07-12 삼성전자주식회사 투과형 고흡수 광 변조기 및 그 제조방법
CN106033866B (zh) 2015-03-20 2019-12-03 云晖科技有限公司 垂直腔面发射激光器
US10511143B2 (en) 2017-08-31 2019-12-17 Globalfoundries Inc. III-V lasers with on-chip integration
US11563307B2 (en) * 2018-10-01 2023-01-24 Mellanox Technologies, Ltd. High speed high bandwidth vertical-cavity surface-emitting laser
WO2021177591A1 (ko) * 2020-03-03 2021-09-10 한국과학기술원 저전류 영역에서의 효율 증대 마이크로 발광 다이오드 소자와 그의 제조 방법 및 그를 포함하는 디스플레이
CN113345987B (zh) * 2021-04-16 2022-05-13 华灿光电(苏州）有限公司 红外发光二极管芯片及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4774554A (en) * 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
US6127692A (en) * 1989-08-04 2000-10-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus
US5762706A (en) * 1993-11-09 1998-06-09 Fujitsu Limited Method of forming compound semiconductor device
US5737353A (en) * 1993-11-26 1998-04-07 Nec Corporation Multiquantum-well semiconductor laser
DE19580250D2 (de) * 1994-03-25 1997-11-27 Fraunhofer Ges Forschung Quantenschichtstruktur
JP2991616B2 (ja) * 1994-06-30 1999-12-20 シャープ株式会社 半導体発光素子
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
JP2861858B2 (ja) * 1995-03-30 1999-02-24 日本電気株式会社 多重量子井戸レーザダイオード
DE19624514C1 (de) * 1996-06-19 1997-07-17 Siemens Ag Laserdiode-Modulator-Kombination
GB2320610A (en) * 1996-12-21 1998-06-24 Sharp Kk laser device
US5959239A (en) * 1997-06-02 1999-09-28 The United States Of America As Represented By The United States Department Of Energy Thermovoltaic semiconductor device including a plasma filter
TW412889B (en) * 1997-09-24 2000-11-21 Nippon Oxygen Co Ltd Semiconductor laser
JP3189791B2 (ja) * 1998-06-19 2001-07-16 日本電気株式会社 半導体レーザ
US7058112B2 (en) * 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
JP2001068790A (ja) * 1999-08-27 2001-03-16 Canon Inc 半導体レーザ構造
GB2353899A (en) * 1999-09-01 2001-03-07 Sharp Kk A quantum well semiconductor device with strained barrier layer
JP2003513476A (ja) * 1999-11-01 2003-04-08 アリゾナ・ボード・オブ・リージェンツ ＧａＡｓ材料系のための長波長仮像ＩｎＧａＮＰＡｓＳｂタイプＩおよびタイプＩＩアクティブ層
US6898224B2 (en) * 2001-08-22 2005-05-24 The Furukawa Electric Co., Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
JP2003258384A (ja) 2003-09-12
US20030161369A1 (en) 2003-08-28
US6711195B2 (en) 2004-03-23
JP4663964B2 (ja) 2011-04-06
EP1341279A3 (de) 2004-12-15
DE60225781T2 (de) 2009-04-16
EP1341279B1 (de) 2008-03-26
EP1341279A2 (de) 2003-09-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE., SG

Owner name: THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXA, US