WO2010002221A3 - 파장변환형 발광다이오드 칩 및 이를 구비한 발광장치 - Google Patents
파장변환형 발광다이오드 칩 및 이를 구비한 발광장치 Download PDFInfo
- Publication number
- WO2010002221A3 WO2010002221A3 PCT/KR2009/003647 KR2009003647W WO2010002221A3 WO 2010002221 A3 WO2010002221 A3 WO 2010002221A3 KR 2009003647 W KR2009003647 W KR 2009003647W WO 2010002221 A3 WO2010002221 A3 WO 2010002221A3
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- Prior art keywords
- chip
- led
- emitting diode
- light emitting
- wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Abstract
특정 파장영역의 광을 방출하는 발광다이오드 칩과, 상기 발광다이오드 칩으로부터 방출되는 광 중 일부를 다른 파장영역의 광으로 변환하는 적어도 1종의 형광체를 함유한 수지로 이루어지며, 상기 발광다이오드 칩의 상면에 형성되어 볼록한 메니스커스(meniscus) 형상의 상면을 갖는 파장변환층을 포함하는 파장변환형 발광다이오드 칩을 제공한다.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09773757.1A EP2312658B1 (en) | 2008-07-03 | 2009-07-03 | A wavelength-converting light emitting diode (led) chip and method for fabrication of an led device equipped with this chip |
CN2009801260516A CN102106009B (zh) | 2008-07-03 | 2009-07-03 | 波长转换发光二极管芯片和具有该芯片的发光二极管装置 |
US13/002,318 US8680550B2 (en) | 2008-07-03 | 2009-07-03 | Wavelength-converting light emitting diode (LED) chip and LED device equipped with chip |
US14/176,981 US8963187B2 (en) | 2008-07-03 | 2014-02-10 | Wavelength-converting light emitting diode (LED) chip and LED device equipped with chip |
US14/600,741 US9287470B2 (en) | 2008-07-03 | 2015-01-20 | Wavelength-converting light emitting diode (LED) chip and LED device equipped with chip |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0064381 | 2008-07-03 | ||
KR20080064381 | 2008-07-03 | ||
KR10-2008-0085556 | 2008-08-29 | ||
KR20080085556 | 2008-08-29 | ||
KR10-2009-0060596 | 2009-07-03 | ||
KR1020090060596A KR101209548B1 (ko) | 2008-07-03 | 2009-07-03 | 파장변환형 발광다이오드 칩 및 이를 구비한 발광장치 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/002,318 A-371-Of-International US8680550B2 (en) | 2008-07-03 | 2009-07-03 | Wavelength-converting light emitting diode (LED) chip and LED device equipped with chip |
US14/176,981 Division US8963187B2 (en) | 2008-07-03 | 2014-02-10 | Wavelength-converting light emitting diode (LED) chip and LED device equipped with chip |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010002221A2 WO2010002221A2 (ko) | 2010-01-07 |
WO2010002221A3 true WO2010002221A3 (ko) | 2010-03-25 |
Family
ID=41814366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/003647 WO2010002221A2 (ko) | 2008-07-03 | 2009-07-03 | 파장변환형 발광다이오드 칩 및 이를 구비한 발광장치 |
Country Status (6)
Country | Link |
---|---|
US (3) | US8680550B2 (ko) |
EP (1) | EP2312658B1 (ko) |
KR (1) | KR101209548B1 (ko) |
CN (1) | CN102106009B (ko) |
TW (1) | TWI499076B (ko) |
WO (1) | WO2010002221A2 (ko) |
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- 2009-07-03 KR KR1020090060596A patent/KR101209548B1/ko not_active IP Right Cessation
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2014
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EP2312658A4 (en) | 2014-04-16 |
US8963187B2 (en) | 2015-02-24 |
US20140159094A1 (en) | 2014-06-12 |
TWI499076B (zh) | 2015-09-01 |
KR20100004889A (ko) | 2010-01-13 |
KR101209548B1 (ko) | 2012-12-07 |
TW201015758A (en) | 2010-04-16 |
CN102106009A (zh) | 2011-06-22 |
CN102106009B (zh) | 2013-07-24 |
US20150137168A1 (en) | 2015-05-21 |
WO2010002221A2 (ko) | 2010-01-07 |
EP2312658A2 (en) | 2011-04-20 |
US20110210358A1 (en) | 2011-09-01 |
EP2312658B1 (en) | 2018-06-27 |
US8680550B2 (en) | 2014-03-25 |
US9287470B2 (en) | 2016-03-15 |
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