JP2014523969A - スパッタリングターゲット - Google Patents
スパッタリングターゲット Download PDFInfo
- Publication number
- JP2014523969A JP2014523969A JP2014518961A JP2014518961A JP2014523969A JP 2014523969 A JP2014523969 A JP 2014523969A JP 2014518961 A JP2014518961 A JP 2014518961A JP 2014518961 A JP2014518961 A JP 2014518961A JP 2014523969 A JP2014523969 A JP 2014523969A
- Authority
- JP
- Japan
- Prior art keywords
- mold
- reactive material
- reservoir
- mandrel
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 109
- 238000000034 method Methods 0.000 claims abstract description 52
- 238000005266 casting Methods 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims abstract description 27
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 36
- 229910052744 lithium Inorganic materials 0.000 claims description 36
- 239000012530 fluid Substances 0.000 claims description 25
- 239000003507 refrigerant Substances 0.000 claims description 24
- 238000005507 spraying Methods 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims 1
- 239000011800 void material Substances 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 description 20
- 239000007789 gas Substances 0.000 description 14
- 230000003628 erosive effect Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000003252 repetitive effect Effects 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 2
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004338 Dichlorodifluoromethane Substances 0.000 description 1
- 229910001141 Ductile iron Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D25/00—Special casting characterised by the nature of the product
- B22D25/06—Special casting characterised by the nature of the product by its physical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D7/00—Casting ingots, e.g. from ferrous metals
- B22D7/005—Casting ingots, e.g. from ferrous metals from non-ferrous metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D7/00—Casting ingots, e.g. from ferrous metals
- B22D7/06—Ingot moulds or their manufacture
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161501605P | 2011-06-27 | 2011-06-27 | |
| US61/501,605 | 2011-06-27 | ||
| PCT/US2012/044399 WO2013003458A1 (en) | 2011-06-27 | 2012-06-27 | Sputtering target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014523969A true JP2014523969A (ja) | 2014-09-18 |
| JP2014523969A5 JP2014523969A5 (https=) | 2015-08-20 |
Family
ID=46598921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014518961A Pending JP2014523969A (ja) | 2011-06-27 | 2012-06-27 | スパッタリングターゲット |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10138544B2 (https=) |
| EP (1) | EP2723915A1 (https=) |
| JP (1) | JP2014523969A (https=) |
| KR (1) | KR101988391B1 (https=) |
| CN (1) | CN103814151B (https=) |
| WO (1) | WO2013003458A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5968808B2 (ja) * | 2013-03-07 | 2016-08-10 | Jx金属株式会社 | インジウム製円筒形ターゲット部材及び円筒形ターゲット部材の製造方法 |
| JP5941016B2 (ja) * | 2013-05-27 | 2016-06-29 | 株式会社神戸製鋼所 | 成膜装置およびそれを用いた成膜方法 |
| JP6305083B2 (ja) * | 2014-02-04 | 2018-04-04 | Jx金属株式会社 | スパッタリングターゲット及び、それの製造方法 |
| CN105349952A (zh) * | 2015-11-09 | 2016-02-24 | 基迈克材料科技(苏州)有限公司 | 金属锂靶材铸造制备方法 |
| CN108827994B (zh) * | 2018-06-04 | 2020-06-19 | 西安交通大学 | 一种车载加速器中子源固态锂靶系统 |
| KR101956017B1 (ko) * | 2018-12-12 | 2019-03-08 | (주)코아엔지니어링 | 스퍼터링용 로터리 타겟 어셈블리의 인듐 충진장치 및 충진방법 |
| US12134125B2 (en) | 2020-02-13 | 2024-11-05 | Junora Ltd | Systems and methods for casting sputtering targets |
| CN112962070B (zh) * | 2021-02-02 | 2023-02-07 | 邱从章 | 一种溅射靶材的制备装备及其制备方法 |
| CN113463047B (zh) * | 2021-08-18 | 2024-09-24 | 先导电子科技股份有限公司 | 一种靶材制备电动辅助装置 |
| CN120394829A (zh) * | 2025-07-02 | 2025-08-01 | 兴化市三诚精密锻造有限公司 | 一种金属铸造用冷却装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06507943A (ja) * | 1991-05-21 | 1994-09-08 | ザ ビーオーシー グループ インコーポレイテッド | 自立性亜鉛合金ターゲットを持つ回転円筒マグネトロン構造 |
| EP1186682A2 (de) * | 2000-09-05 | 2002-03-13 | Unaxis Materials Deutschland GmbH | Zylinderförmiges Sputtertarget und Verfahren zu seiner Herstellung |
| WO2011045304A1 (en) * | 2009-10-12 | 2011-04-21 | Gradel S.À.R.L. | Method and apparatus for production of rotatable sputtering targets |
Family Cites Families (124)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH577864A5 (https=) | 1974-05-29 | 1976-07-30 | Sulzer Ag | |
| ES8402188A1 (es) | 1982-04-15 | 1984-01-16 | Creusot Loire | Procedimiento de fabricacion de un lingote hueco de acero. |
| US5215639A (en) | 1984-10-09 | 1993-06-01 | Genus, Inc. | Composite sputtering target structures and process for producing such structures |
| DE3532131A1 (de) | 1985-09-10 | 1987-03-12 | Bayer Ag | Verfahren zur gerichteten erstarrung von metallschmelzen |
| JPH086175B2 (ja) | 1988-02-18 | 1996-01-24 | 三井造船株式会社 | 管材内面スパッタ用ターゲット |
| DE3912381A1 (de) | 1988-04-15 | 1989-10-26 | Sharp Kk | Auffaengereinheit |
| JPH01290765A (ja) | 1988-05-16 | 1989-11-22 | Toshiba Corp | スパッタリングターゲット |
| JPH02190470A (ja) | 1989-01-13 | 1990-07-26 | Matsushita Electric Ind Co Ltd | スパッタ用ターゲット及びその製造方法 |
| JPH02200775A (ja) * | 1989-01-31 | 1990-08-09 | Daido Steel Co Ltd | スパッタリング用ターゲットおよびその製造方法 |
| JPH02311394A (ja) | 1989-05-25 | 1990-12-26 | Daido Steel Co Ltd | Wターゲット材 |
| US5096562A (en) | 1989-11-08 | 1992-03-17 | The Boc Group, Inc. | Rotating cylindrical magnetron structure for large area coating |
| JPH0539566A (ja) | 1991-02-19 | 1993-02-19 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
| US5230459A (en) | 1992-03-18 | 1993-07-27 | Tosoh Smd, Inc. | Method of bonding a sputter target-backing plate assembly assemblies produced thereby |
| DE4216870C2 (de) | 1992-05-22 | 1994-08-11 | Titan Aluminium Feingus Gmbh | Verfahren zur Herstellung eines metallischen Gußkörpers nach dem Feingußverfahren |
| US5693203A (en) | 1992-09-29 | 1997-12-02 | Japan Energy Corporation | Sputtering target assembly having solid-phase bonded interface |
| US5487822A (en) | 1993-11-24 | 1996-01-30 | Applied Materials, Inc. | Integrated sputtering target assembly |
| US5433835B1 (en) | 1993-11-24 | 1997-05-20 | Applied Materials Inc | Sputtering device and target with cover to hold cooling fluid |
| US5474667A (en) | 1994-02-22 | 1995-12-12 | Materials Research Corporation | Reduced stress sputtering target and method of manufacturing therefor |
| US5836506A (en) | 1995-04-21 | 1998-11-17 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
| US5857611A (en) | 1995-08-16 | 1999-01-12 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
| US5591314A (en) | 1995-10-27 | 1997-01-07 | Morgan; Steven V. | Apparatus for affixing a rotating cylindrical magnetron target to a spindle |
| US5830336A (en) | 1995-12-05 | 1998-11-03 | Minnesota Mining And Manufacturing Company | Sputtering of lithium |
| GB9600210D0 (en) | 1996-01-05 | 1996-03-06 | Vanderstraeten E Bvba | Improved sputtering targets and method for the preparation thereof |
| JPH10158829A (ja) | 1996-12-04 | 1998-06-16 | Sony Corp | スパッタリングターゲット組立体の製造方法 |
| US5963778A (en) | 1997-02-13 | 1999-10-05 | Tosoh Smd, Inc. | Method for producing near net shape planar sputtering targets and an intermediate therefor |
| EP0918351A1 (en) | 1997-11-19 | 1999-05-26 | Sinvaco N.V. | Improved planar magnetron with moving magnet assembly |
| US6579431B1 (en) | 1998-01-14 | 2003-06-17 | Tosoh Smd, Inc. | Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers |
| DE69928790T2 (de) | 1998-04-16 | 2006-08-31 | Bekaert Advanced Coatings N.V. | Mittel zur kontrolle der targetabtragung und der zerstäubung in einem magnetron |
| US6287435B1 (en) | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
| EP0969238A1 (en) | 1998-06-29 | 2000-01-05 | Sinvaco N.V. | Vacuum tight coupling for tube sections |
| US6183686B1 (en) | 1998-08-04 | 2001-02-06 | Tosoh Smd, Inc. | Sputter target assembly having a metal-matrix-composite backing plate and methods of making same |
| US6451185B2 (en) | 1998-08-12 | 2002-09-17 | Honeywell International Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
| US6071389A (en) | 1998-08-21 | 2000-06-06 | Tosoh Smd, Inc. | Diffusion bonded sputter target assembly and method of making |
| EP1135233A4 (en) | 1998-12-03 | 2004-11-03 | Tosoh Smd Inc | INSERT TARGET AND METHOD FOR MANUFACTURING THE SAME |
| US6192969B1 (en) * | 1999-03-22 | 2001-02-27 | Asarco Incorporated | Casting of high purity oxygen free copper |
| JP3967067B2 (ja) | 1999-06-15 | 2007-08-29 | 東ソー株式会社 | スパッタリングターゲット |
| EP1063679B1 (en) | 1999-06-21 | 2008-01-09 | Bekaert Advanced Coatings NV. | Erosion profile compensated magnetron with moving magnet assembly |
| US6164519A (en) | 1999-07-08 | 2000-12-26 | Praxair S.T. Technology, Inc. | Method of bonding a sputtering target to a backing plate |
| US6190516B1 (en) | 1999-10-06 | 2001-02-20 | Praxair S.T. Technology, Inc. | High magnetic flux sputter targets with varied magnetic permeability in selected regions |
| DE19953470A1 (de) | 1999-11-05 | 2001-05-23 | Heraeus Gmbh W C | Rohrtarget |
| US6878250B1 (en) | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
| KR100668126B1 (ko) | 2000-05-12 | 2007-01-16 | 신닛뽄세이테쯔 카부시키카이샤 | 박육 주편 연속 주조용 냉각 드럼의 가공 장치 |
| JP2001347356A (ja) | 2000-06-07 | 2001-12-18 | Mitsubishi Materials Corp | 引け巣が無く表面が滑らかで皺の無い銅または銅合金インゴットの製造方法および装置 |
| US6619537B1 (en) | 2000-06-12 | 2003-09-16 | Tosoh Smd, Inc. | Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers |
| US6725522B1 (en) | 2000-07-12 | 2004-04-27 | Tosoh Smd, Inc. | Method of assembling target and backing plates |
| KR20030024868A (ko) | 2000-08-17 | 2003-03-26 | 토소우 에스엠디, 인크 | 수명-종료-표시를 갖는 고순도 스퍼터 타켓과 이의 제조방법 |
| EP1322444A4 (en) | 2000-09-11 | 2008-01-23 | Tosoh Smd Inc | METHOD FOR MANUFACTURING CATHODIC SPUTTER TARGETS WITH INTERNAL COOLING CHANNELS |
| US6409897B1 (en) | 2000-09-20 | 2002-06-25 | Poco Graphite, Inc. | Rotatable sputter target |
| JP3905301B2 (ja) | 2000-10-31 | 2007-04-18 | 日鉱金属株式会社 | タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法 |
| AT4240U1 (de) | 2000-11-20 | 2001-04-25 | Plansee Ag | Verfahren zur herstellung einer verdampfungsquelle |
| EP1349682B1 (en) | 2000-12-18 | 2008-10-08 | Tosoh Smd, Inc. | Low temperature sputter target/backing plate joining technique and assemblies made thereby |
| DE10063383C1 (de) * | 2000-12-19 | 2002-03-14 | Heraeus Gmbh W C | Verfahren zur Herstellung eines Rohrtargets und Verwendung |
| DE10102493B4 (de) | 2001-01-19 | 2007-07-12 | W.C. Heraeus Gmbh | Rohrförmiges Target und Verfahren zur Herstellung eines solchen Targets |
| US6599405B2 (en) | 2001-05-30 | 2003-07-29 | Praxair S.T. Technology, Inc. | Recessed sputter target |
| US7141812B2 (en) | 2002-06-05 | 2006-11-28 | Mikro Systems, Inc. | Devices, methods, and systems involving castings |
| CN1289709C (zh) | 2001-08-13 | 2006-12-13 | 贝卡尔特股份有限公司 | 用于制造溅射靶的方法 |
| US6856444B2 (en) | 2002-05-10 | 2005-02-15 | Sage Electrochromics, Inc. | Inferential temperature measurement of an electrochromic device |
| US6799627B2 (en) | 2002-06-10 | 2004-10-05 | Santoku America, Inc. | Castings of metallic alloys with improved surface quality, structural integrity and mechanical properties fabricated in titanium carbide coated graphite molds under vacuum |
| US20040016635A1 (en) | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
| AU2002368353A1 (en) | 2002-11-07 | 2004-06-03 | Honeywell International Inc. | Die cast sputter targets |
| US20060207740A1 (en) * | 2002-11-14 | 2006-09-21 | Martin Weigert | Processes for producing a sputtering target from a silicon-based alloy, a sputtering target |
| US6921470B2 (en) | 2003-02-13 | 2005-07-26 | Cabot Corporation | Method of forming metal blanks for sputtering targets |
| US20040186810A1 (en) | 2003-02-14 | 2004-09-23 | Michaluk Christopher A. | Method of supplying sputtering targets to fabricators and other users |
| DE602004020599D1 (de) | 2003-03-25 | 2009-05-28 | Bekaert Advanced Coatings | Universelle vakuumskupplung für ein zylindrisches aufnahmeteil |
| JP2009513818A (ja) | 2003-07-04 | 2009-04-02 | ベーカート・アドヴァンスト・コーティングス | 回転管状スパッタターゲット組立体 |
| US20090078570A1 (en) | 2003-08-11 | 2009-03-26 | Wuwen Yi | Target/backing plate constructions, and methods of forming target/backing plate constructions |
| US20050051606A1 (en) | 2003-09-09 | 2005-03-10 | Rene Perrot | Method of manufacturing an extended life sputter target assembly and product thereof |
| JP2007517133A (ja) | 2003-09-11 | 2007-06-28 | ハネウェル・インターナショナル・インコーポレーテッド | 粒子トラップを形成するために蒸着処理構成要素を処理する方法及び粒子トラップを表面上に有する蒸着処理構成要素 |
| US6988306B2 (en) | 2003-12-01 | 2006-01-24 | Praxair Technology, Inc. | High purity ferromagnetic sputter target, assembly and method of manufacturing same |
| JP2007529626A (ja) | 2004-03-15 | 2007-10-25 | ベーカート・アドヴァンスト・コーティングス | スパッタターゲットの熱応力緩和方法 |
| EP1733412A1 (en) | 2004-04-05 | 2006-12-20 | Bekaert Advanced Coatings | A tubular magnet assembly |
| JP4531091B2 (ja) | 2004-04-22 | 2010-08-25 | ベカルト プログレッシブ コンポジッツ,リミテッド ライアビリティー カンパニー | 円筒形ろ過カートリッジを保持する圧力容器 |
| US20050236270A1 (en) | 2004-04-23 | 2005-10-27 | Heraeus, Inc. | Controlled cooling of sputter targets |
| US7300617B2 (en) | 2004-05-13 | 2007-11-27 | David Gerling | Method of making fusion cast articles |
| US20050279630A1 (en) | 2004-06-16 | 2005-12-22 | Dynamic Machine Works, Inc. | Tubular sputtering targets and methods of flowforming the same |
| WO2006008197A1 (en) | 2004-07-16 | 2006-01-26 | Bekaert Advanced Coatings | Cylindrical target obtained by hot isostatic pressing |
| JP5046334B2 (ja) | 2004-10-11 | 2012-10-10 | ソレラス・アドヴァンスト・コーティングス・ナムローゼ・フェンノートシャップ | 長型ガス分配システム |
| PL1799876T3 (pl) | 2004-10-18 | 2009-07-31 | Bekaert Advanced Coatings | Płaski blok końcowy do podtrzymywania obrotowego targetu do napylania |
| ATE392007T1 (de) | 2004-10-18 | 2008-04-15 | Bekaert Advanced Coatings | Endblock für eine sputter-vorrichtung mit drehbarem target |
| EP1652564A1 (en) | 2004-10-27 | 2006-05-03 | Martin Eurlings | Back-flush device |
| EP1652565A1 (en) | 2004-10-27 | 2006-05-03 | Martin Eurlings | Cross flow filter device with concentric filter elements |
| DE102004060423B4 (de) | 2004-12-14 | 2016-10-27 | Heraeus Deutschland GmbH & Co. KG | Rohrtarget und dessen Verwendung |
| WO2006071596A1 (en) | 2004-12-27 | 2006-07-06 | Cardinal Cg Company | Oscillating shielded cylindrical target assemblies and their methods of use |
| US7372610B2 (en) | 2005-02-23 | 2008-05-13 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
| US20060201589A1 (en) | 2005-03-11 | 2006-09-14 | Honeywell International Inc. | Components comprising metallic material, physical vapor deposition targets, thin films, and methods of forming metallic components |
| EP1856303B1 (en) | 2005-03-11 | 2009-01-07 | Bekaert Advanced Coatings | Single, right-angled end-block |
| US7354659B2 (en) | 2005-03-30 | 2008-04-08 | Reactive Nanotechnologies, Inc. | Method for fabricating large dimension bonds using reactive multilayer joining |
| US7757883B2 (en) | 2005-04-11 | 2010-07-20 | Bekaert Progressive Composites, Llc | Side-ported filament wound pressure vessels |
| JP4820996B2 (ja) * | 2005-05-30 | 2011-11-24 | 大学共同利用機関法人自然科学研究機構 | 希ガスの固定化装置及び固定化方法 |
| WO2007003488A1 (en) | 2005-06-30 | 2007-01-11 | Bekaert Advanced Coatings | A module for coating both sides of a substrate in a single pass |
| KR100674005B1 (ko) | 2005-07-01 | 2007-01-24 | 주식회사 에스에프에이 | 스퍼터링 소스 및 이를 구비한 스퍼터 |
| US20070017803A1 (en) | 2005-07-22 | 2007-01-25 | Heraeus, Inc. | Enhanced sputter target manufacturing method |
| US20070062803A1 (en) | 2005-09-20 | 2007-03-22 | Cp Technologies, Inc. | Device and method of manufacturing sputtering targets |
| US20070074969A1 (en) | 2005-10-03 | 2007-04-05 | Simpson Wayne R | Very long cylindrical sputtering target and method for manufacturing |
| US7593154B2 (en) | 2005-10-11 | 2009-09-22 | Sage Electrochromics, Inc. | Electrochromic devices having improved ion conducting layers |
| AT8697U1 (de) | 2005-10-14 | 2006-11-15 | Plansee Se | Rohrtarget |
| WO2007074872A1 (ja) | 2005-12-28 | 2007-07-05 | Advanced Material Technology Co. Ltd. | スパッタリングターゲット構造体 |
| PL1813695T3 (pl) | 2006-01-31 | 2013-04-30 | Materion Advanced Materials Tech And Services Inc | Rurowa tarcza do napylania katodowego o ulepszonej sztywności |
| EP1826292A1 (en) | 2006-02-23 | 2007-08-29 | Bekaert Advanced Coatings | Sputter module. |
| CN101484605A (zh) | 2006-06-02 | 2009-07-15 | 贝卡尔特先进涂层公司 | 可旋转溅射靶 |
| WO2007141173A1 (en) | 2006-06-02 | 2007-12-13 | Bekaert Advanced Coatings | A rotatable sputter target |
| JP5080573B2 (ja) | 2006-06-19 | 2012-11-21 | ソレラス・アドヴァンスト・コーティングス・ナムローゼ・フェンノートシャップ | スパッタリング設備のエンドブロック用のインサート部品 |
| JP4879986B2 (ja) | 2006-06-29 | 2012-02-22 | Jx日鉱日石金属株式会社 | スパッタリングターゲット/バッキングプレート接合体 |
| US20080041720A1 (en) | 2006-08-14 | 2008-02-21 | Jaeyeon Kim | Novel manufacturing design and processing methods and apparatus for PVD targets |
| US20080112878A1 (en) | 2006-11-09 | 2008-05-15 | Honeywell International Inc. | Alloy casting apparatuses and chalcogenide compound synthesis methods |
| EP2089764B1 (en) | 2006-11-09 | 2016-01-06 | Sage Electrochromics, Inc. | Method of making an ion-switching device without a separate lithiation step |
| US20080110746A1 (en) | 2006-11-09 | 2008-05-15 | Kardokus Janine K | Novel manufacturing design and processing methods and apparatus for sputtering targets |
| US8206646B2 (en) | 2006-12-22 | 2012-06-26 | Praxair Tecnology, Inc. | Method for consolidating and diffusion-bonding powder metallurgy sputtering target |
| US20080236738A1 (en) | 2007-03-30 | 2008-10-02 | Chi-Fung Lo | Bonded sputtering target and methods of manufacture |
| JP5467735B2 (ja) | 2007-07-02 | 2014-04-09 | 東ソー株式会社 | 円筒形スパッタリングターゲット |
| US8702919B2 (en) | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
| US20090065354A1 (en) | 2007-09-12 | 2009-03-12 | Kardokus Janine K | Sputtering targets comprising a novel manufacturing design, methods of production and uses thereof |
| DE102007044651B4 (de) | 2007-09-18 | 2011-07-21 | W.C. Heraeus GmbH, 63450 | Rohrsputtertarget mit grabenförmig strukturierter Außenfläche des Trägerrohres sowie Verfahren zu seiner Herstellung |
| TW200914637A (en) | 2007-09-27 | 2009-04-01 | Bekaert Advanced Coatings | Insert piece for an end-block of a sputtering installation |
| WO2009100985A1 (en) | 2008-02-15 | 2009-08-20 | Bekaert Advanced Coatings Nv | Multiple grooved vacuum coupling |
| US8465654B2 (en) | 2008-03-07 | 2013-06-18 | Bekaert Advanced Filtration Sa | Filter candle and mesh pack with a deformable seal, and method of filtering molten or dissolved polymers |
| US20100178525A1 (en) | 2009-01-12 | 2010-07-15 | Scott Campbell | Method for making composite sputtering targets and the tartets made in accordance with the method |
| BRPI0911980A2 (pt) | 2008-05-16 | 2015-10-13 | Bekaert Advanced Coatings | pulverização catódica rotativa de magnetron com alta rigidez |
| JP5387118B2 (ja) * | 2008-06-10 | 2014-01-15 | 東ソー株式会社 | 円筒形スパッタリングターゲット及びその製造方法 |
| CN102089455A (zh) | 2008-07-08 | 2011-06-08 | 贝卡尔特先进涂层公司 | 一种制备包含第一相和第二相的氧化物溅射靶的方法 |
| US9315663B2 (en) | 2008-09-26 | 2016-04-19 | Mikro Systems, Inc. | Systems, devices, and/or methods for manufacturing castings |
| JP2010111943A (ja) | 2008-10-10 | 2010-05-20 | Hitachi Metals Ltd | スパッタリングターゲット材の製造方法 |
| EP2287356A1 (en) | 2009-07-31 | 2011-02-23 | Bekaert Advanced Coatings NV. | Sputter target, method and apparatus for manufacturing sputter targets |
| US20110089030A1 (en) * | 2009-10-20 | 2011-04-21 | Miasole | CIG sputtering target and methods of making and using thereof |
-
2012
- 2012-06-27 KR KR1020137034334A patent/KR101988391B1/ko active Active
- 2012-06-27 CN CN201280031120.7A patent/CN103814151B/zh active Active
- 2012-06-27 EP EP12741130.4A patent/EP2723915A1/en not_active Withdrawn
- 2012-06-27 JP JP2014518961A patent/JP2014523969A/ja active Pending
- 2012-06-27 US US14/127,759 patent/US10138544B2/en active Active
- 2012-06-27 WO PCT/US2012/044399 patent/WO2013003458A1/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06507943A (ja) * | 1991-05-21 | 1994-09-08 | ザ ビーオーシー グループ インコーポレイテッド | 自立性亜鉛合金ターゲットを持つ回転円筒マグネトロン構造 |
| EP1186682A2 (de) * | 2000-09-05 | 2002-03-13 | Unaxis Materials Deutschland GmbH | Zylinderförmiges Sputtertarget und Verfahren zu seiner Herstellung |
| WO2011045304A1 (en) * | 2009-10-12 | 2011-04-21 | Gradel S.À.R.L. | Method and apparatus for production of rotatable sputtering targets |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140202852A1 (en) | 2014-07-24 |
| EP2723915A1 (en) | 2014-04-30 |
| US10138544B2 (en) | 2018-11-27 |
| WO2013003458A1 (en) | 2013-01-03 |
| CN103814151B (zh) | 2016-01-20 |
| KR20140057213A (ko) | 2014-05-12 |
| KR101988391B1 (ko) | 2019-06-12 |
| CN103814151A (zh) | 2014-05-21 |
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